Грузовой вагон ( )| Таблицы данных | Фотографии | Производитель. Часть # | Акции | Цены | А | Packaging | Series | ProductStatus | FETType | Technology | DraintoSourceVoltage(Vdss) | Current-ContinuousDrain(Id)@25°C | DriveVoltage(MaxRdsOnMinRdsOn) | RdsOn(Max)@IdVgs | Vgs(th)(Max)@Id | GateCharge(Qg)(Max)@Vgs | Vgs(Max) | InputCapacitance(Ciss)(Max)@Vds | FETFeature | PowerDissipation(Max) | OperatingTemperature | MountingType |
|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|
Таблицы данных |
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STW21N90K5MOSFET N-CH 900V 18.5A TO247-3 |
2394 | 8.23 |
ДобавитьРасследования |
Tube | SuperMESH5™ | Active | N-Channel | MOSFET (Metal Oxide) | 900 V | 18.5A (Tc) | 10V | 299mOhm @ 9A, 10V | 5V @ 100µA | 43 nC @ 10 V | ±30V | 1645 pF @ 100 V | - | 250W (Tc) | -55°C ~ 150°C (TJ) | Through Hole |
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Таблицы данных |
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IXFH34N65X2MOSFET N-CH 650V 34A TO247 |
3894 | 8.31 |
ДобавитьРасследования |
Tube | HiPerFET™, Ultra X2 | Active | N-Channel | MOSFET (Metal Oxide) | 650 V | 34A (Tc) | 10V | 105mOhm @ 17A, 10V | 5.5V @ 2.5mA | 56 nC @ 10 V | ±30V | 3330 pF @ 25 V | - | 540W (Tc) | -55°C ~ 150°C (TJ) | Through Hole |
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Таблицы данных |
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IXFP20N85XMOSFET N-CH 850V 20A TO220AB |
2288 | 8.31 |
ДобавитьРасследования |
Tube | HiPerFET™, Ultra X | Active | N-Channel | MOSFET (Metal Oxide) | 850 V | 20A (Tc) | 10V | 330mOhm @ 500mA, 10V | 5.5V @ 2.5mA | 63 nC @ 10 V | ±30V | 1660 pF @ 25 V | - | 540W (Tc) | -55°C ~ 150°C (TJ) | Through Hole |
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Таблицы данных |
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IXFA20N85XHVMOSFET N-CH 850V 20A TO263 |
3757 | 8.49 |
ДобавитьРасследования |
Tube | HiPerFET™, Ultra X | Active | N-Channel | MOSFET (Metal Oxide) | 850 V | 20A (Tc) | 10V | 330mOhm @ 500mA, 10V | 5.5V @ 2.5mA | 63 nC @ 10 V | ±30V | 1660 pF @ 25 V | - | 540W (Tc) | -55°C ~ 150°C (TJ) | Surface Mount |
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Таблицы данных |
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IRFP22N60KPBFMOSFET N-CH 600V 22A TO247-3 |
3919 | 8.51 |
ДобавитьРасследования |
Tube | - | Active | N-Channel | MOSFET (Metal Oxide) | 600 V | 22A (Tc) | 10V | 280mOhm @ 13A, 10V | 5V @ 250µA | 150 nC @ 10 V | ±30V | 3570 pF @ 25 V | - | 370W (Tc) | -55°C ~ 150°C (TJ) | Through Hole |
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Таблицы данных |
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STW20NM60FDMOSFET N-CH 600V 20A TO247-3 |
2326 | 7.32 |
ДобавитьРасследования |
Tube | FDmesh™ | Active | N-Channel | MOSFET (Metal Oxide) | 600 V | 20A (Tc) | 10V | 290mOhm @ 10A, 10V | 5V @ 250µA | 37 nC @ 10 V | ±30V | 1300 pF @ 25 V | - | 214W (Tc) | -65°C ~ 150°C (TJ) | Through Hole |
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Таблицы данных |
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IPW65R110CFDFKSA1MOSFET N-CH 650V 31.2A TO247-3 |
3872 | 8.82 |
ДобавитьРасследования |
Tube | CoolMOS™ | Not For New Designs | N-Channel | MOSFET (Metal Oxide) | 650 V | 31.2A (Tc) | 10V | 110mOhm @ 12.7A, 10V | 4.5V @ 1.3mA | 118 nC @ 10 V | ±20V | 3240 pF @ 100 V | - | 277.8W (Tc) | -55°C ~ 150°C (TJ) | Through Hole |
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Таблицы данных |
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IXFH160N15T2MOSFET N-CH 150V 160A TO247AD |
2382 | 8.82 |
ДобавитьРасследования |
Tube | HiPerFET™, TrenchT2™ | Active | N-Channel | MOSFET (Metal Oxide) | 150 V | 160A (Tc) | 10V | 9mOhm @ 80A, 10V | 4.5V @ 1mA | 253 nC @ 10 V | ±20V | 15000 pF @ 25 V | - | 880W (Tc) | -55°C ~ 175°C (TJ) | Through Hole |
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Таблицы данных |
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STW45N60DM6MOSFET N-CH 600V 30A TO247 |
2293 | 9.03 |
ДобавитьРасследования |
Tube | MDmesh™ DM6 | Active | N-Channel | MOSFET (Metal Oxide) | 600 V | 30A (Tc) | 10V | 99mOhm @ 15A, 10V | 4.75V @ 250µA | 44 nC @ 10 V | ±25V | 1920 pF @ 100 V | - | 210W (Tc) | -55°C ~ 150°C (TJ) | Through Hole |
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Таблицы данных |
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STW40N60M2MOSFET N-CH 600V 34A TO247 |
2320 | 9.06 |
ДобавитьРасследования |
Tube | MDmesh™ II Plus | Active | N-Channel | MOSFET (Metal Oxide) | 600 V | 34A (Tc) | 10V | 88mOhm @ 17A, 10V | 4V @ 250µA | 57 nC @ 10 V | ±25V | 2500 pF @ 100 V | - | 250W (Tc) | -55°C ~ 150°C (TJ) | Through Hole |
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Таблицы данных |
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MSC090SMA070SSICFET N-CH 700V D3PAK |
2086 | 9.11 |
ДобавитьРасследования |
Tube | - | Active | N-Channel | SiCFET (Silicon Carbide) | 700 V | 25A (Tc) | - | - | - | - | - | - | - | - | -55°C ~ 175°C (TJ) | Surface Mount |
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Таблицы данных |
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IXTH8P50MOSFET P-CH 500V 8A TO247 |
2723 | 9.36 |
ДобавитьРасследования |
Tube | - | Active | P-Channel | MOSFET (Metal Oxide) | 500 V | 8A (Tc) | 10V | 1.2Ohm @ 4A, 10V | 5V @ 250µA | 130 nC @ 10 V | ±20V | 3400 pF @ 25 V | - | 180W (Tc) | -55°C ~ 150°C (TJ) | Through Hole |
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Таблицы данных |
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IXFP90N20X3MMOSFET N-CH 200V 90A TO220 |
2653 | 9.40 |
ДобавитьРасследования |
Tube | HiPerFET™, Ultra X3 | Active | N-Channel | MOSFET (Metal Oxide) | 200 V | 90A (Tc) | 10V | 12.8mOhm @ 45A, 10V | 4.5V @ 1.5mA | 78 nC @ 10 V | ±20V | 5420 pF @ 25 V | - | 36W (Tc) | -55°C ~ 150°C (TJ) | Through Hole |
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Таблицы данных |
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IPP65R110CFDAAKSA1MOSFET N-CH 650V 31.2A TO220-3 |
3096 | 9.43 |
ДобавитьРасследования |
Tube | Automotive, AEC-Q101, CoolMOS™ | Active | N-Channel | MOSFET (Metal Oxide) | 650 V | 31.2A (Tc) | 10V | 110mOhm @ 12.7A, 10V | 4.5V @ 1.3mA | 118 nC @ 10 V | ±20V | 3240 pF @ 100 V | - | 277.8W (Tc) | -40°C ~ 150°C (TJ) | Through Hole |
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Таблицы данных |
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STW15NK90ZMOSFET N-CH 900V 15A TO247-3 |
3520 | 9.48 |
ДобавитьРасследования |
Tube | SuperMESH™ | Active | N-Channel | MOSFET (Metal Oxide) | 900 V | 15A (Tc) | 10V | 550mOhm @ 7.5A, 10V | 4.5V @ 150µA | 256 nC @ 10 V | ±30V | 6100 pF @ 25 V | - | 350W (Tc) | -55°C ~ 150°C (TJ) | Through Hole |
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STW50N65DM6MOSFET N-CH 650V 33A TO247-3 |
2311 | 9.66 |
ДобавитьРасследования |
Tube | MDmesh™ DM6 | Active | N-Channel | MOSFET (Metal Oxide) | 650 V | 33A (Tc) | 10V | 91mOhm @ 16.5A, 10V | 4.75V @ 250µA | 52.5 nC @ 10 V | ±25V | 52500 pF @ 100 V | - | 250W (Tc) | -55°C ~ 150°C (TJ) | Through Hole |
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Таблицы данных |
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STW65N60DM6MOSFET N-CH 600V 38A TO247 |
2998 | 9.80 |
ДобавитьРасследования |
Tube | MDmesh™ DM6 | Active | N-Channel | MOSFET (Metal Oxide) | 600 V | 38A (Tc) | - | - | - | - | - | - | - | - | - | Through Hole |
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Таблицы данных |
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FCP36N60NMOSFET N-CH 600V 36A TO220-3 |
2055 | 9.82 |
ДобавитьРасследования |
Tube | SupreMOS™ | Last Time Buy | N-Channel | MOSFET (Metal Oxide) | 600 V | 36A (Tc) | 10V | 90mOhm @ 18A, 10V | 4V @ 250µA | 112 nC @ 10 V | ±30V | 4785 pF @ 100 V | - | 312W (Tc) | -55°C ~ 150°C (TJ) | Through Hole |
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Таблицы данных |
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APT18M100BMOSFET N-CH 1000V 18A TO247 |
3283 | 9.88 |
ДобавитьРасследования |
Tube | - | Active | N-Channel | MOSFET (Metal Oxide) | 1000 V | 18A (Tc) | 10V | 700mOhm @ 9A, 10V | 5V @ 1mA | 150 nC @ 10 V | ±30V | 4845 pF @ 25 V | - | 625W (Tc) | -55°C ~ 150°C (TJ) | Through Hole |
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Таблицы данных |
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IXTQ30N60PMOSFET N-CH 600V 30A TO3P |
2249 | 10.05 |
ДобавитьРасследования |
Tube | Polar | Active | N-Channel | MOSFET (Metal Oxide) | 600 V | 30A (Tc) | 10V | 240mOhm @ 15A, 10V | 5V @ 250µA | 82 nC @ 10 V | ±30V | 5050 pF @ 25 V | - | 540W (Tc) | -55°C ~ 150°C (TJ) | Through Hole |
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