Грузовой вагон ( )| Таблицы данных | Фотографии | Производитель. Часть # | Акции | Цены | А | Packaging | Series | ProductStatus | FETType | Technology | DraintoSourceVoltage(Vdss) | Current-ContinuousDrain(Id)@25°C | DriveVoltage(MaxRdsOnMinRdsOn) | RdsOn(Max)@IdVgs | Vgs(th)(Max)@Id | GateCharge(Qg)(Max)@Vgs | Vgs(Max) | InputCapacitance(Ciss)(Max)@Vds | FETFeature | PowerDissipation(Max) | OperatingTemperature | MountingType |
|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|
Таблицы данных |
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APT40N60JCU2MOSFET N-CH 600V 40A SOT227 |
3018 | 26.62 |
ДобавитьРасследования |
Bulk | - | Active | N-Channel | MOSFET (Metal Oxide) | 600 V | 40A (Tc) | 10V | 70mOhm @ 20A, 10V | 3.9V @ 1mA | 259 nC @ 10 V | ±20V | 7015 pF @ 25 V | - | 290W (Tc) | -55°C ~ 150°C (TJ) | Chassis Mount |
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Таблицы данных |
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IXFX66N85XMOSFET N-CH 850V 66A PLUS247-3 |
3280 | 27.18 |
ДобавитьРасследования |
Tube | HiPerFET™, Ultra X | Active | N-Channel | MOSFET (Metal Oxide) | 850 V | 66A (Tc) | 10V | 65mOhm @ 500mA, 10V | 5.5V @ 8mA | 230 nC @ 10 V | ±30V | 8900 pF @ 25 V | - | 1250W (Tc) | -55°C ~ 150°C (TJ) | Through Hole |
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SCT2080KEGC11DIODE N-CH 1200V 40A TO-247AC |
3348 | 27.25 |
ДобавитьРасследования |
Tube | - | Active | N-Channel | SiCFET (Silicon Carbide) | 1200 V | 40A (Tc) | 18V | 117mOhm @ 10A, 18V | 4V @ 4.4mA | 106 nC @ 18 V | +22V, -6V | 2080 pF @ 800 V | - | 262W (Tc) | 175°C (TJ) | Through Hole |
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Таблицы данных |
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APT51F50JMOSFET N-CH 500V 51A ISOTOP |
2901 | 30.48 |
ДобавитьРасследования |
Tube | - | Active | N-Channel | MOSFET (Metal Oxide) | 500 V | 51A (Tc) | 10V | 75mOhm @ 37A, 10V | 5V @ 2.5mA | 290 nC @ 10 V | ±30V | 11600 pF @ 25 V | - | 480W (Tc) | -55°C ~ 150°C (TJ) | Chassis Mount |
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Таблицы данных |
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IPW65R050CFD7AXKSA1MOSFET N-CH 650V 45A TO247-3-41 |
2458 | 14.39 |
ДобавитьРасследования |
Tube | Automotive, AEC-Q101, CoolMOS™ CFD7A | Active | N-Channel | MOSFET (Metal Oxide) | 650 V | 45A (Tc) | 10V | 50mOhm @ 24.8A, 10V | 4.5V @ 1.24mA | 102 nC @ 10 V | ±20V | 4975 pF @ 400 V | - | 227W (Tc) | -40°C ~ 150°C (TJ) | Through Hole |
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IXTK210P10TMOSFET P-CH -100V -210A TO-264 |
3589 | 30.81 |
ДобавитьРасследования |
Tube | TrenchP™ | Active | - | - | - | - | - | - | - | - | - | - | - | - | - | - |
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Таблицы данных |
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APT10M11JVRU3MOSFET N-CH 100V 142A SOT227 |
2572 | 31.76 |
ДобавитьРасследования |
Bulk | - | Active | N-Channel | MOSFET (Metal Oxide) | 100 V | 142A (Tc) | 10V | 11mOhm @ 71A, 10V | 4V @ 2.5mA | 300 nC @ 10 V | ±30V | 8600 pF @ 25 V | - | 450W (Tc) | -55°C ~ 150°C (TJ) | Chassis Mount |
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Таблицы данных |
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IPP65R050CFD7AAKSA1MOSFET N-CH 650V 45A TO220-3 |
2093 | 14.83 |
ДобавитьРасследования |
Tube | Automotive, AEC-Q101, CoolMOS™ CFD7A | Active | N-Channel | MOSFET (Metal Oxide) | 650 V | 45A (Tc) | 10V | 50mOhm @ 24.8A, 10V | 4.5V @ 1.24mA | 102 nC @ 10 V | ±20V | 4975 pF @ 400 V | - | 227W (Tc) | -40°C ~ 150°C (TJ) | Through Hole |
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Таблицы данных |
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IXFB44N100PMOSFET N-CH 1000V 44A PLUS264 |
2746 | 32.29 |
ДобавитьРасследования |
Tube | HiPerFET™, Polar | Active | N-Channel | MOSFET (Metal Oxide) | 1000 V | 44A (Tc) | 10V | 220mOhm @ 22A, 10V | 6.5V @ 1mA | 305 nC @ 10 V | ±30V | 19000 pF @ 25 V | - | 1250W (Tc) | -55°C ~ 150°C (TJ) | Through Hole |
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Таблицы данных |
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IXFX52N100XMOSFET N-CH 1000V 52A PLUS247 |
3454 | 35.45 |
ДобавитьРасследования |
Tube | HiPerFET™, Ultra X | Active | N-Channel | MOSFET (Metal Oxide) | 1000 V | 52A (Tc) | 10V | 125mOhm @ 26A, 10V | 6V @ 4mA | 245 nC @ 10 V | ±30V | 6725 pF @ 25 V | - | 1250W (Tc) | -55°C ~ 150°C (TJ) | Through Hole |
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Таблицы данных |
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STE88N65M5MOSFET N-CH 650V 88A ISOTOP |
3033 | 43.12 |
ДобавитьРасследования |
Tube | MDmesh™ V | Active | N-Channel | MOSFET (Metal Oxide) | 650 V | 88A (Tc) | 10V | 29mOhm @ 42A, 10V | 5V @ 250µA | 204 nC @ 10 V | ±25V | 8825 pF @ 100 V | - | 494W (Tc) | 150°C (TJ) | Chassis Mount |
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Таблицы данных |
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SCT4013DRC15750V, 13M, 4-PIN THD, TRENCH-STR |
2800 | 44.03 |
ДобавитьРасследования |
Tube | - | Active | N-Channel | SiCFET (Silicon Carbide) | 750 V | 105A (Tc) | 18V | 16.9mOhm @ 58A, 18V | 4.8V @ 30.8mA | 170 nC @ 18 V | +21V, -4V | 4580 pF @ 500 V | - | 312W | 175°C (TJ) | Through Hole |
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Таблицы данных |
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SCT4018KRC151200V, 18M, 4-PIN THD, TRENCH-ST |
2904 | 44.78 |
ДобавитьРасследования |
Tube | - | Active | N-Channel | SiCFET (Silicon Carbide) | 1200 V | 81A (Tc) | 18V | 23.4mOhm @ 42A, 18V | 4.8V @ 22.2mA | 170 nC @ 18 V | +21V, -4V | 4532 pF @ 800 V | - | 312W | 175°C (TJ) | Through Hole |
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Таблицы данных |
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IXFB44N100Q3MOSFET N-CH 1000V 44A PLUS264 |
2119 | 45.47 |
ДобавитьРасследования |
Tube | HiPerFET™, Q3 Class | Active | N-Channel | MOSFET (Metal Oxide) | 1000 V | 44A (Tc) | 10V | 220mOhm @ 22A, 10V | 6.5V @ 8mA | 264 nC @ 10 V | ±30V | 13600 pF @ 25 V | - | 1560W (Tc) | -55°C ~ 150°C (TJ) | Through Hole |
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Таблицы данных |
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IXTK22N100LMOSFET N-CH 1000V 22A TO264 |
3881 | 45.73 |
ДобавитьРасследования |
Tube | Linear | Active | N-Channel | MOSFET (Metal Oxide) | 1000 V | 22A (Tc) | 20V | 600mOhm @ 11A, 20V | 5V @ 250µA | 270 nC @ 15 V | ±30V | 7050 pF @ 25 V | - | 700W (Tc) | -55°C ~ 150°C (TJ) | Through Hole |
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Таблицы данных |
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APT58M80JMOSFET N-CH 800V 60A SOT227 |
3049 | 65.94 |
ДобавитьРасследования |
Tube | - | Active | N-Channel | MOSFET (Metal Oxide) | 800 V | 60A (Tc) | 10V | 110mOhm @ 43A, 10V | 5V @ 5mA | 570 nC @ 10 V | ±30V | 17550 pF @ 25 V | - | 960W (Tc) | -55°C ~ 150°C (TJ) | Chassis Mount |
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Таблицы данных |
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GA05JT03-46TRANS SJT 300V 9A TO46 |
3602 | 70.39 |
ДобавитьРасследования |
Bulk | - | Not For New Designs | - | SiC (Silicon Carbide Junction Transistor) | 300 V | 9A (Tc) | - | 240mOhm @ 5A | - | - | - | - | - | 20W (Tc) | -55°C ~ 225°C (TJ) | Through Hole |
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Таблицы данных |
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IXFN50N120SICSICFET N-CH 1200V 47A SOT227B |
2862 | 81.11 |
ДобавитьРасследования |
Tube | - | Active | N-Channel | SiCFET (Silicon Carbide) | 1200 V | 47A (Tc) | 20V | 50mOhm @ 40A, 20V | 2.2V @ 2mA | 100 nC @ 20 V | +20V, -5V | 1900 pF @ 1000 V | - | - | -40°C ~ 150°C (TJ) | Chassis Mount |
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RMA7N20ED1MOSFET N-CH 20V 700MA DFN1006-3 |
3506 | 0.03 |
ДобавитьРасследования |
Tape & Reel (TR) | - | Active | N-Channel | MOSFET (Metal Oxide) | 20 V | 700mA (Tc) | 2.5V, 4.5V | 260mOhm @ 500mA, 4.5V | 1.2V @ 250µA | - | ±8V | 40 pF @ 10 V | - | 550mW (Ta) | -50°C ~ 150°C (TJ) | Surface Mount |
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RMA7P20ED1MOSFET P-CH 20V 700MA DFN1006-3 |
2942 | 0.03 |
ДобавитьРасследования |
Tape & Reel (TR) | - | Active | P-Channel | MOSFET (Metal Oxide) | 20 V | 700mA (Tc) | 2.5V, 4.5V | 420mOhm @ 500mA, 4.5V | 1V @ 250µA | - | ±8V | 52 pF @ 4 V | - | 900mW (Ta) | -50°C ~ 150°C (TJ) | Surface Mount |
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