Грузовой вагон ( )| Таблицы данных | Фотографии | Производитель. Часть # | Акции | Цены | А | Packaging | Series | ProductStatus | FETType | Technology | DraintoSourceVoltage(Vdss) | Current-ContinuousDrain(Id)@25°C | DriveVoltage(MaxRdsOnMinRdsOn) | RdsOn(Max)@IdVgs | Vgs(th)(Max)@Id | GateCharge(Qg)(Max)@Vgs | Vgs(Max) | InputCapacitance(Ciss)(Max)@Vds | FETFeature | PowerDissipation(Max) | OperatingTemperature | MountingType |
|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|
Таблицы данных |
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APT75M50LMOSFET N-CH 500V 75A TO264 |
2448 | 15.61 |
ДобавитьРасследования |
Tube | POWER MOS 8™ | Active | N-Channel | MOSFET (Metal Oxide) | 500 V | 75A (Tc) | 10V | 75mOhm @ 37A, 10V | 5V @ 2.5mA | 290 nC @ 10 V | ±30V | 11600 pF @ 25 V | - | 1040W (Tc) | -55°C ~ 150°C (TJ) | Through Hole |
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Таблицы данных |
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SCT2280KEHRC111200V, 14A, THD, SILICON-CARBIDE |
3945 | 15.73 |
ДобавитьРасследования |
Tube | Automotive, AEC-Q101 | Active | N-Channel | SiCFET (Silicon Carbide) | 1200 V | 14A (Tc) | 18V | 364mOhm @ 4A, 18V | 4V @ 1.4mA | 36 nC @ 400 V | +22V, -6V | 667 pF @ 800 V | - | 108W (Tc) | 175°C (TJ) | Through Hole |
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Таблицы данных |
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SCT4062KRC151200V, 62M, 4-PIN THD, TRENCH-ST |
2656 | 15.82 |
ДобавитьРасследования |
Tube | - | Active | N-Channel | SiCFET (Silicon Carbide) | 1200 V | 26A (Tc) | 18V | 81mOhm @ 12A, 18V | 4.8V @ 6.45mA | 64 nC @ 18 V | +21V, -4V | 1498 pF @ 800 V | - | 115W | 175°C (TJ) | Through Hole |
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Таблицы данных |
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SCT4062KEC111200V, 62M, 3-PIN THD, TRENCH-ST |
3446 | 15.82 |
ДобавитьРасследования |
Tube | - | Active | N-Channel | SiCFET (Silicon Carbide) | 1200 V | 26A (Tc) | 18V | 81mOhm @ 12A, 18V | 4.8V @ 6.45mA | 64 nC @ 18 V | +21V, -4V | 1498 pF @ 800 V | - | 115W | 175°C (TJ) | Through Hole |
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Таблицы данных |
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SCT4045DRHRC15750V, 34A, 4-PIN THD, TRENCH-STR |
3263 | 15.87 |
ДобавитьРасследования |
Tube | Automotive, AEC-Q101 | Active | N-Channel | SiC (Silicon Carbide Junction Transistor) | 750 V | 34A (Tc) | 18V | 59mOhm @ 17A, 18V | 4.8V @ 8.89mA | 63 nC @ 18 V | +21V, -4V | 1460 pF @ 500 V | - | 115W | 175°C (TJ) | Through Hole |
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Таблицы данных |
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SCT4045DEHRC11750V, 34A, 3-PIN THD, TRENCH-STR |
3976 | 15.87 |
ДобавитьРасследования |
Tube | Automotive, AEC-Q101 | Active | N-Channel | SiC (Silicon Carbide Junction Transistor) | 750 V | 34A (Tc) | 18V | 59mOhm @ 17A, 18V | 4.8V @ 8.89mA | 63 nC @ 18 V | +21V, -4V | 1460 pF @ 500 V | - | 115W | 175°C (TJ) | Through Hole |
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Таблицы данных |
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SIHG80N60EF-GE3MOSFET N-CH 600V 80A TO247AC |
2093 | 16.37 |
ДобавитьРасследования |
Tube | EF | Active | N-Channel | MOSFET (Metal Oxide) | 600 V | 80A (Tc) | 10V | 32mOhm @ 40A, 10V | 4V @ 250µA | 400 nC @ 10 V | ±30V | 6600 pF @ 100 V | - | 520W (Tc) | -55°C ~ 150°C (TJ) | Through Hole |
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Таблицы данных |
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SCT4026DW7HRTL750V, 51A, 7-PIN SMD, TRENCH-STR |
2535 | 23.84 |
ДобавитьРасследования |
Tape & Reel (TR),Cut Tape (CT),Digi-Reel® | Automotive, AEC-Q101 | Active | N-Channel | SiC (Silicon Carbide Junction Transistor) | 750 V | 51A (Tc) | 18V | 34mOhm @ 29A, 18V | 4.8V @ 15.4mA | 94 nC @ 18 V | +21V, -4V | 2320 pF @ 500 V | - | 150W | 175°C (TJ) | Surface Mount |
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Таблицы данных |
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IPT60R035CFD7XTMA1MOSFET N-CH 600V 67A 8HSOF |
2395 | 15.72 |
ДобавитьРасследования |
Tape & Reel (TR),Cut Tape (CT),Digi-Reel® | CoolMOS™ CFD7 | Active | N-Channel | MOSFET (Metal Oxide) | 600 V | 67A (Tc) | 10V | 35mOhm @ 24.9A, 10V | 4.5V @ 1.25mA | 109 nC @ 10 V | ±20V | 4354 pF @ 400 V | - | 351W (Tc) | -55°C ~ 150°C (TJ) | Surface Mount |
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Таблицы данных |
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IPZ65R045C7XKSA1MOSFET N-CH 650V 46A TO247 |
2371 | 17.08 |
ДобавитьРасследования |
Tube | CoolMOS™ C7 | Active | N-Channel | MOSFET (Metal Oxide) | 650 V | 46A (Tc) | 10V | 45mOhm @ 24.9A, 10V | 4V @ 1.25mA | 93 nC @ 10 V | ±20V | 4340 pF @ 400 V | - | 227W (Tc) | -55°C ~ 150°C (TJ) | Through Hole |
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Таблицы данных |
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SCT4036KW7HRTL1200V, 40A, 7-PIN SMD, TRENCH-ST |
2670 | 24.23 |
ДобавитьРасследования |
Tape & Reel (TR),Cut Tape (CT),Digi-Reel® | Automotive, AEC-Q101 | Active | N-Channel | SiC (Silicon Carbide Junction Transistor) | 1200 V | 40A (Tc) | 18V | 47mOhm @ 21A, 18V | 4.8V @ 11.1mA | 91 nC @ 18 V | +21V, -4V | 2335 pF @ 800 V | - | 150W | 175°C (TJ) | Surface Mount |
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Таблицы данных |
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STWA40N95DK5MOSFET N-CHANNEL 950V 38A TO247 |
3216 | 17.47 |
ДобавитьРасследования |
Tube | MDmesh™ DK5 | Active | N-Channel | MOSFET (Metal Oxide) | 950 V | 38A (Tc) | 10V | 130mOhm @ 19A, 10V | 5V @ 100µA | 100 nC @ 10 V | ±30V | 3480 pF @ 100 V | - | 450W (Tc) | -55°C ~ 150°C | Through Hole |
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Таблицы данных |
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APT5010B2FLLGMOSFET N-CH 500V 46A T-MAX |
2239 | 18.04 |
ДобавитьРасследования |
Tube | POWER MOS 7® | Active | N-Channel | MOSFET (Metal Oxide) | 500 V | 46A (Tc) | 10V | 100mOhm @ 23A, 10V | 5V @ 2.5mA | 95 nC @ 10 V | ±30V | 4360 pF @ 25 V | - | 520W (Tc) | -55°C ~ 150°C (TJ) | Through Hole |
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Таблицы данных |
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SCTH40N120G2V7AGSICFET N-CH 650V 33A H2PAK-7 |
3184 | 22.35 |
ДобавитьРасследования |
Tape & Reel (TR),Cut Tape (CT),Digi-Reel® | Automotive, AEC-Q101 | Active | N-Channel | SiCFET (Silicon Carbide) | 650 V | 33A (Tc) | 18V | 105mOhm @ 20A, 18V | 5V @ 1mA | 63 nC @ 18 V | +22V, -10V | 1230 pF @ 800 V | - | 250W (Tc) | -55°C ~ 175°C (TJ) | Surface Mount |
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Таблицы данных |
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FMD15-06KC5MOSFET N-CH 600V 15A I4PAC |
3203 | 18.49 |
ДобавитьРасследования |
Tube | CoolMOS™ | Active | N-Channel | MOSFET (Metal Oxide) | 600 V | 15A (Tc) | 10V | 165mOhm @ 12A, 10V | 3.5V @ 790µA | 52 nC @ 10 V | ±20V | 2000 pF @ 100 V | - | - | -55°C ~ 150°C (TJ) | Through Hole |
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Таблицы данных |
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APT31M100LMOSFET N-CH 1000V 32A TO264 |
3601 | 18.58 |
ДобавитьРасследования |
Tube | POWER MOS 8™ | Active | N-Channel | MOSFET (Metal Oxide) | 1000 V | 32A (Tc) | 10V | 400mOhm @ 16A, 10V | 5V @ 2.5mA | 260 nC @ 10 V | ±30V | 8500 pF @ 25 V | - | 1040W (Tc) | -55°C ~ 150°C (TJ) | Through Hole |
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Таблицы данных |
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IXFK50N85XMOSFET N-CH 850V 50A TO264 |
2464 | 18.64 |
ДобавитьРасследования |
Tube | HiPerFET™, Ultra X | Active | N-Channel | MOSFET (Metal Oxide) | 850 V | 50A (Tc) | 10V | 105mOhm @ 500mA, 10V | 5.5V @ 4mA | 152 nC @ 10 V | ±30V | 4480 pF @ 25 V | - | 890W (Tc) | -55°C ~ 150°C (TJ) | Through Hole |
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Таблицы данных |
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SCTW35N65G2VSICFET N-CH 650V 45A HIP247 |
2709 | 19.57 |
ДобавитьРасследования |
Tube | Automotive, AEC-Q101 | Active | N-Channel | SiCFET (Silicon Carbide) | 650 V | 45A (Tc) | 18V, 20V | 67mOhm @ 20A, 20V | 5V @ 1mA | 73 nC @ 20 V | +22V, -10V | 1370 pF @ 400 V | - | 240W (Tc) | -55°C ~ 200°C (TJ) | Through Hole |
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Таблицы данных |
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FCH76N60NFMOSFET N-CH 600V 72.8A TO247-3 |
2154 | 19.62 |
ДобавитьРасследования |
Bulk,Tube | SupreMOS™ | Last Time Buy | N-Channel | MOSFET (Metal Oxide) | 600 V | 72.8A (Tc) | 10V | 38mOhm @ 38A, 10V | 5V @ 250µA | 300 nC @ 10 V | ±30V | 11045 pF @ 100 V | - | 543W (Tc) | -55°C ~ 150°C (TJ) | Through Hole |
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Таблицы данных |
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IXTX102N65X2MOSFET N-CH 650V 102A PLUS247-3 |
2807 | 19.80 |
ДобавитьРасследования |
Tube | Ultra X2 | Active | N-Channel | MOSFET (Metal Oxide) | 650 V | 102A (Tc) | 10V | 30mOhm @ 51A, 10V | 5V @ 250µA | 152 nC @ 10 V | ±30V | 10900 pF @ 25 V | - | 1040W (Tc) | -55°C ~ 150°C (TJ) | Through Hole |
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