Грузовой вагон ( )| Таблицы данных | Фотографии | Производитель. Часть # | Акции | Цены | А | Packaging | Series | ProductStatus | FETType | Technology | DraintoSourceVoltage(Vdss) | Current-ContinuousDrain(Id)@25°C | DriveVoltage(MaxRdsOnMinRdsOn) | RdsOn(Max)@IdVgs | Vgs(th)(Max)@Id | GateCharge(Qg)(Max)@Vgs | Vgs(Max) | InputCapacitance(Ciss)(Max)@Vds | FETFeature | PowerDissipation(Max) | OperatingTemperature | MountingType |
|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|
Таблицы данных |
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R6030ENZ4C13MOSFET N-CH 600V 30A TO247 |
2260 | 10.07 |
ДобавитьРасследования |
Tube | - | Active | N-Channel | MOSFET (Metal Oxide) | 600 V | 30A (Tc) | 10V | 130mOhm @ 14.5A, 10V | 4V @ 1mA | 85 nC @ 10 V | ±20V | 2100 pF @ 25 V | - | 305W (Tc) | 150°C (TJ) | Through Hole |
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Таблицы данных |
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IXFH20N85XMOSFET N-CH 850V 20A TO247 |
3397 | 10.13 |
ДобавитьРасследования |
Tube | HiPerFET™, Ultra X | Active | N-Channel | MOSFET (Metal Oxide) | 850 V | 20A (Tc) | 10V | 330mOhm @ 500mA, 10V | 5.5V @ 2.5mA | 63 nC @ 10 V | ±30V | 1660 pF @ 25 V | - | 540W (Tc) | -55°C ~ 150°C (TJ) | Through Hole |
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Таблицы данных |
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IXFQ50N60P3MOSFET N-CH 600V 50A TO3P |
2386 | 10.20 |
ДобавитьРасследования |
Tube | HiPerFET™, Polar3™ | Active | N-Channel | MOSFET (Metal Oxide) | 600 V | 50A (Tc) | 10V | 145mOhm @ 500mA, 10V | 5V @ 4mA | 94 nC @ 10 V | ±30V | 6300 pF @ 25 V | - | 1040W (Tc) | -55°C ~ 150°C (TJ) | Through Hole |
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Таблицы данных |
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SIHG47N60E-GE3MOSFET N-CH 600V 47A TO247AC |
2238 | 10.21 |
ДобавитьРасследования |
Tube | - | Active | N-Channel | MOSFET (Metal Oxide) | 600 V | 47A (Tc) | 10V | 64mOhm @ 24A, 10V | 4V @ 250µA | 220 nC @ 10 V | ±30V | 9620 pF @ 100 V | - | 357W (Tc) | -55°C ~ 150°C (TJ) | Through Hole |
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Таблицы данных |
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IPZA60R060P7XKSA1MOSFET N-CH 600V 48A TO247-4 |
2998 | 1.00 |
ДобавитьРасследования |
Bulk,Tube | CoolMOS™ P7 | Active | N-Channel | MOSFET (Metal Oxide) | 600 V | 48A (Tc) | 10V | 60mOhm @ 15.9A, 10V | 4V @ 800µA | 67 nC @ 10 V | ±20V | 2895 pF @ 400 V | - | 164W (Tc) | -55°C ~ 150°C (TJ) | Through Hole |
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MSC180SMA120SMOSFET SIC 1200 V 180 MOHM TO-26 |
2278 | 10.27 |
ДобавитьРасследования |
Tube | - | Active | - | - | - | - | - | - | - | - | - | - | - | - | - | - |
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Таблицы данных |
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IPW65R099C6FKSA1MOSFET N-CH 650V 38A TO247-3 |
2393 | 1.00 |
ДобавитьРасследования |
Bulk,Tube | CoolMOS™ | Not For New Designs | N-Channel | MOSFET (Metal Oxide) | 650 V | 38A (Tc) | 10V | 99mOhm @ 12.8A, 10V | 3.5V @ 1.2mA | 127 nC @ 10 V | ±20V | 2780 pF @ 100 V | - | 278W (Tc) | -55°C ~ 150°C (TJ) | Through Hole |
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Таблицы данных |
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SCT4045DW7HRTL750V, 31A, 7-PIN SMD, TRENCH-STR |
3133 | 15.87 |
ДобавитьРасследования |
Tape & Reel (TR),Cut Tape (CT),Digi-Reel® | Automotive, AEC-Q101 | Active | N-Channel | SiC (Silicon Carbide Junction Transistor) | 750 V | 31A (Tc) | 18V | 59mOhm @ 17A, 18V | 4.8V @ 8.89mA | 63 nC @ 18 V | +21V, -4V | 1460 pF @ 500 V | - | 93W | 175°C (TJ) | Surface Mount |
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Таблицы данных |
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SIHG44N65EF-GE3MOSFET N-CH 650V 46A TO247AC |
2831 | 10.31 |
ДобавитьРасследования |
Tube | E | Active | N-Channel | MOSFET (Metal Oxide) | 650 V | 46A (Tc) | 10V | 73mOhm @ 22A, 10V | 4V @ 250µA | 278 nC @ 10 V | ±30V | 5892 pF @ 100 V | - | 417W (Tc) | -55°C ~ 150°C (TJ) | Through Hole |
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Таблицы данных |
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IXTA100N15X4MOSFET N-CH 150V 100A TO263AA |
2486 | 10.32 |
ДобавитьРасследования |
Tube | Ultra X4 | Active | N-Channel | MOSFET (Metal Oxide) | 150 V | 100A (Tc) | 10V | 11.5mOhm @ 50A, 10V | 4.5V @ 250µA | 74 nC @ 10 V | ±20V | 3970 pF @ 25 V | - | 375W (Tc) | -55°C ~ 175°C (TJ) | Surface Mount |
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Таблицы данных |
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SIHG47N60EF-GE3MOSFET N-CH 600V 47A TO247AC |
3032 | 10.42 |
ДобавитьРасследования |
Tube | - | Active | N-Channel | MOSFET (Metal Oxide) | 600 V | 47A (Tc) | 10V | 67mOhm @ 24A, 10V | 4V @ 250µA | 225 nC @ 10 V | ±30V | 4854 pF @ 100 V | - | 379W (Tc) | -55°C ~ 150°C (TJ) | Through Hole |
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Таблицы данных |
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SCT4062KW7HRTL1200V, 24A, 7-PIN SMD, TRENCH-ST |
3701 | 16.29 |
ДобавитьРасследования |
Tape & Reel (TR),Cut Tape (CT),Digi-Reel® | Automotive, AEC-Q101 | Active | N-Channel | SiC (Silicon Carbide Junction Transistor) | 1200 V | 24A (Tc) | 18V | 81mOhm @ 12A, 18V | 4.8V @ 6.45mA | 64 nC @ 18 V | +21V, -4V | 1498 pF @ 800 V | - | 93W | 175°C (TJ) | Surface Mount |
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Таблицы данных |
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IXTH36N50PMOSFET N-CH 500V 36A TO247 |
3409 | 10.60 |
ДобавитьРасследования |
Tube | Polar | Active | N-Channel | MOSFET (Metal Oxide) | 500 V | 36A (Tc) | 10V | 170mOhm @ 500mA, 10V | 5V @ 250µA | 85 nC @ 10 V | ±30V | 5500 pF @ 25 V | - | 540W (Tc) | -55°C ~ 150°C (TJ) | Through Hole |
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Таблицы данных |
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IPBE65R075CFD7AATMA1MOSFET N-CH 650V 32A TO263-7 |
3940 | 13.28 |
ДобавитьРасследования |
Tape & Reel (TR),Cut Tape (CT),Digi-Reel® | Automotive, AEC-Q101, CoolMOS™ CFD7A | Active | N-Channel | MOSFET (Metal Oxide) | 650 V | 32A (Tc) | 10V | 75mOhm @ 16.4A, 10V | 4.5V @ 820µA | 68 nC @ 10 V | ±20V | 3288 pF @ 400 V | - | 171W (Tc) | -40°C ~ 150°C (TJ) | Surface Mount |
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Таблицы данных |
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IPW65R110CFDAFKSA1MOSFET N-CH 650V 31.2A TO247-3 |
3474 | 10.94 |
ДобавитьРасследования |
Tube | Automotive, AEC-Q101, CoolMOS™ | Active | N-Channel | MOSFET (Metal Oxide) | 650 V | 31.2A (Tc) | 10V | 110mOhm @ 12.7A, 10V | 4.5V @ 1.3mA | 118 nC @ 10 V | ±20V | 3240 pF @ 100 V | - | 277.8W (Tc) | -40°C ~ 150°C (TJ) | Through Hole |
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Таблицы данных |
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TSM60NB150CF C0GMOSFET N-CH 600V 24A ITO220S |
3331 | 10.98 |
ДобавитьРасследования |
Tube | - | Active | N-Channel | MOSFET (Metal Oxide) | 600 V | 24A (Tc) | 10V | 150mOhm @ 4.3A, 10V | 4V @ 250µA | 43 nC @ 10 V | ±30V | 1765 pF @ 100 V | - | 62.5W (Tc) | -55°C ~ 150°C (TJ) | Through Hole |
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Таблицы данных |
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IXTA130N15X4-7MOSFET N-CH 150V 130A TO263-7 |
3550 | 11.66 |
ДобавитьРасследования |
Tube | Ultra X4 | Active | N-Channel | MOSFET (Metal Oxide) | 150 V | 130A (Tc) | 10V | 8mOhm @ 65A, 10V | 4.5V @ 250µA | 87 nC @ 10 V | ±20V | 4770 pF @ 25 V | - | 400W (Tc) | -55°C ~ 150°C (TJ) | Surface Mount |
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Таблицы данных |
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IXTT36N50PMOSFET N-CH 500V 36A TO268 |
3329 | 11.70 |
ДобавитьРасследования |
Tube | Polar | Active | N-Channel | MOSFET (Metal Oxide) | 500 V | 36A (Tc) | 10V | 170mOhm @ 500mA, 10V | 5V @ 250µA | 85 nC @ 10 V | ±30V | 5500 pF @ 25 V | - | 540W (Tc) | -55°C ~ 150°C (TJ) | Surface Mount |
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Таблицы данных |
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FCH041N65EFL4MOSFET N-CH 650V 76A TO247 |
3992 | 12.29 |
ДобавитьРасследования |
Tube | FRFET®, SuperFET® II | Active | N-Channel | MOSFET (Metal Oxide) | 650 V | 76A (Tc) | 10V | 41mOhm @ 38A, 10V | 5V @ 7.6mA | 298 nC @ 10 V | ±20V | 12560 pF @ 100 V | - | 595W (Tc) | -55°C ~ 150°C (TJ) | Through Hole |
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Таблицы данных |
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STW70N60DM2MOSFET N-CH 600V 66A TO247 |
3976 | 12.32 |
ДобавитьРасследования |
Tube | MDmesh™ DM2 | Active | N-Channel | MOSFET (Metal Oxide) | 600 V | 66A (Tc) | 10V | 42mOhm @ 33A, 10V | 5V @ 250µA | 121 nC @ 10 V | ±25V | 5508 pF @ 100 V | - | 446W (Tc) | -55°C ~ 150°C (TJ) | Through Hole |
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