Грузовой вагон ( )| Таблицы данных | Фотографии | Производитель. Часть # | Акции | Цены | А | Packaging | Series | ProductStatus | FETType | Technology | DraintoSourceVoltage(Vdss) | Current-ContinuousDrain(Id)@25°C | DriveVoltage(MaxRdsOnMinRdsOn) | RdsOn(Max)@IdVgs | Vgs(th)(Max)@Id | GateCharge(Qg)(Max)@Vgs | Vgs(Max) | InputCapacitance(Ciss)(Max)@Vds | FETFeature | PowerDissipation(Max) | OperatingTemperature | MountingType |
|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|
Таблицы данных |
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STW30N65M5MOSFET N-CH 650V 22A TO247-3 |
3153 | 6.65 |
ДобавитьРасследования |
Tube | MDmesh™ V | Active | N-Channel | MOSFET (Metal Oxide) | 650 V | 22A (Tc) | 10V | 139mOhm @ 11A, 10V | 5V @ 250µA | 64 nC @ 10 V | ±25V | 2880 pF @ 100 V | - | 140W (Tc) | 150°C (TJ) | Through Hole |
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Таблицы данных |
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SIHP33N60EF-GE3MOSFET N-CH 600V 33A TO220AB |
2851 | 6.68 |
ДобавитьРасследования |
Tube | - | Active | N-Channel | MOSFET (Metal Oxide) | 600 V | 33A (Tc) | 10V | 98mOhm @ 16.5A, 10V | 4V @ 250µA | 155 nC @ 10 V | ±30V | 3454 pF @ 100 V | - | 278W (Tc) | -55°C ~ 150°C (TJ) | Through Hole |
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Таблицы данных |
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IRFPC50PBFMOSFET N-CH 600V 11A TO247-3 |
2797 | 6.70 |
ДобавитьРасследования |
Tube | - | Active | N-Channel | MOSFET (Metal Oxide) | 600 V | 11A (Tc) | 10V | 600mOhm @ 6A, 10V | 4V @ 250µA | 140 nC @ 10 V | ±20V | 2700 pF @ 25 V | - | 180W (Tc) | -55°C ~ 150°C (TJ) | Through Hole |
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Таблицы данных |
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MSJW20N65-BPMOSFET N-CH TO247 |
3430 | 6.70 |
ДобавитьРасследования |
Tube | - | Active | - | - | - | 20A (Tc) | - | - | - | - | - | - | - | - | - | Through Hole |
|
Таблицы данных |
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STP40N60M2MOSFET N-CH 600V 34A TO220 |
2759 | 6.71 |
ДобавитьРасследования |
Tube | MDmesh™ II Plus | Active | N-Channel | MOSFET (Metal Oxide) | 600 V | 34A (Tc) | 10V | 88mOhm @ 17A, 10V | 4V @ 250µA | 57 nC @ 10 V | ±25V | 2500 pF @ 100 V | - | 250W (Tc) | -55°C ~ 150°C (TJ) | Through Hole |
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Таблицы данных |
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NTP082N65S3FMOSFET N-CH 650V 40A TO220-3 |
3507 | 6.83 |
ДобавитьРасследования |
Tube | FRFET®, SuperFET® II | Active | N-Channel | MOSFET (Metal Oxide) | 650 V | 40A (Tc) | 10V | 82mOhm @ 20A, 10V | 5V @ 4mA | 81 nC @ 10 V | ±30V | 3410 pF @ 400 V | - | 313W (Tc) | -55°C ~ 150°C (TJ) | Through Hole |
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Таблицы данных |
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IXTQ74N20PMOSFET N-CH 200V 74A TO3P |
3067 | 6.85 |
ДобавитьРасследования |
Tube | Polar | Active | N-Channel | MOSFET (Metal Oxide) | 200 V | 74A (Tc) | 10V | 34mOhm @ 37A, 10V | 5V @ 250µA | 107 nC @ 10 V | ±20V | 3300 pF @ 25 V | - | 480W (Tc) | -55°C ~ 175°C (TJ) | Through Hole |
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Таблицы данных |
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IXTQ76N25TMOSFET N-CH 250V 76A TO3P |
3259 | 6.86 |
ДобавитьРасследования |
Tube | Trench | Active | N-Channel | MOSFET (Metal Oxide) | 250 V | 76A (Tc) | 10V | 39mOhm @ 500mA, 10V | 5V @ 1mA | 92 nC @ 10 V | ±30V | 4500 pF @ 25 V | - | 460W (Tc) | -55°C ~ 150°C (TJ) | Through Hole |
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Таблицы данных |
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STF25N80K5MOSFET N-CH 800V 19.5A TO220FP |
3771 | 6.88 |
ДобавитьРасследования |
Tube | SuperMESH5™ | Active | N-Channel | MOSFET (Metal Oxide) | 800 V | 19.5A (Tc) | 10V | 260mOhm @ 19.5A, 10V | 5V @ 100µA | 40 nC @ 10 V | ±30V | 1600 pF @ 100 V | - | 40W (Tc) | -55°C ~ 150°C (TJ) | Through Hole |
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Таблицы данных |
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STW25N80K5MOSFET N-CH 800V 19.5A TO247 |
3079 | 6.90 |
ДобавитьРасследования |
Tube | SuperMESH5™ | Active | N-Channel | MOSFET (Metal Oxide) | 800 V | 19.5A (Tc) | 10V | 260mOhm @ 19.5A, 10V | 5V @ 100µA | 40 nC @ 10 V | ±30V | 1600 pF @ 100 V | - | 250W (Tc) | -55°C ~ 150°C (TJ) | Through Hole |
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Таблицы данных |
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STW45N60DM2AGMOSFET N-CH 600V 34A TO247 |
2082 | 6.91 |
ДобавитьРасследования |
Tube | Automotive, AEC-Q101, MDmesh™ DM2 | Active | N-Channel | MOSFET (Metal Oxide) | 600 V | 34A (Tc) | 10V | 93mOhm @ 17A, 10V | 5V @ 250µA | 56 nC @ 10 V | ±25V | 2500 pF @ 100 V | - | 250W (Tc) | -55°C ~ 150°C (TJ) | Through Hole |
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Таблицы данных |
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SIHP38N60E-GE3MOSFET N-CH 600V 43A TO220AB |
2576 | 6.93 |
ДобавитьРасследования |
Tube | E | Active | N-Channel | MOSFET (Metal Oxide) | 600 V | 43A (Tc) | 10V | 65mOhm @ 19A, 10V | 4V @ 250µA | 183 nC @ 10 V | ±30V | 3600 pF @ 100 V | - | 313W (Tc) | -55°C ~ 150°C (TJ) | Through Hole |
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Таблицы данных |
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IRFPC60LCPBFMOSFET N-CH 600V 16A TO247-3 |
3172 | 6.93 |
ДобавитьРасследования |
Tube | - | Active | N-Channel | MOSFET (Metal Oxide) | 600 V | 16A (Tc) | 10V | 400mOhm @ 9.6A, 10V | 4V @ 250µA | 120 nC @ 10 V | ±30V | 3500 pF @ 25 V | - | 280W (Tc) | -55°C ~ 150°C (TJ) | Through Hole |
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Таблицы данных |
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SUP85N10-10-E3MOSFET N-CH 100V 85A TO220AB |
3616 | 6.94 |
ДобавитьРасследования |
Tube | TrenchFET® | Active | N-Channel | MOSFET (Metal Oxide) | 100 V | 85A (Tc) | 4.5V, 10V | 10.5mOhm @ 30A, 10V | 3V @ 250µA | 160 nC @ 10 V | ±20V | 6550 pF @ 25 V | - | 3.75W (Ta), 250W (Tc) | -55°C ~ 175°C (TJ) | Through Hole |
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Таблицы данных |
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IRFP4127PBFMOSFET N-CH 200V 75A TO247AC |
2564 | 6.94 |
ДобавитьРасследования |
Tube | HEXFET® | Active | N-Channel | MOSFET (Metal Oxide) | 200 V | 75A (Tc) | 10V | 21mOhm @ 44A, 10V | 5V @ 250µA | 150 nC @ 10 V | ±20V | 5380 pF @ 50 V | - | 341W (Tc) | -55°C ~ 175°C (TJ) | Through Hole |
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Таблицы данных |
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SIHG35N60E-GE3MOSFET N-CH 600V 32A TO247AC |
3971 | 6.98 |
ДобавитьРасследования |
Tube | E | Active | N-Channel | MOSFET (Metal Oxide) | 600 V | 32A (Tc) | 10V | 94mOhm @ 17A, 10V | 4V @ 250µA | 132 nC @ 10 V | ±30V | 2760 pF @ 100 V | - | 250W (Tc) | -55°C ~ 150°C (TJ) | Through Hole |
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Таблицы данных |
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SIHG33N60E-GE3MOSFET N-CH 600V 33A TO247AC |
2163 | 7.00 |
ДобавитьРасследования |
Tube | - | Active | N-Channel | MOSFET (Metal Oxide) | 600 V | 33A (Tc) | 10V | 99mOhm @ 16.5A, 10V | 4V @ 250µA | 150 nC @ 10 V | ±30V | 3508 pF @ 100 V | - | 278W (Tc) | -55°C ~ 150°C (TJ) | Through Hole |
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Таблицы данных |
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SIHW33N60E-GE3MOSFET N-CH 600V 33A TO247AD |
2903 | 7.00 |
ДобавитьРасследования |
Tube | - | Active | N-Channel | MOSFET (Metal Oxide) | 600 V | 33A (Tc) | 10V | 99mOhm @ 16.5A, 10V | 4V @ 250µA | 150 nC @ 10 V | ±30V | 3508 pF @ 100 V | - | 278W (Tc) | -55°C ~ 150°C (TJ) | Through Hole |
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Таблицы данных |
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TSM70N380CI C0GMOSFET N-CH 700V 11A ITO220AB |
2024 | 7.03 |
ДобавитьРасследования |
Tube | - | Active | N-Channel | MOSFET (Metal Oxide) | 700 V | 11A (Tc) | 10V | 380mOhm @ 3.3A, 10V | 4V @ 250µA | 18.8 nC @ 10 V | ±30V | 981 pF @ 100 V | - | 125W (Tc) | -55°C ~ 150°C (TJ) | Through Hole |
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Таблицы данных |
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STP45N60DM2AGMOSFET N-CH 600V 34A TO220 |
3413 | 7.07 |
ДобавитьРасследования |
Tube | Automotive, AEC-Q101, MDmesh™ DM2 | Active | N-Channel | MOSFET (Metal Oxide) | 600 V | 34A (Tc) | 10V | 93mOhm @ 17A, 10V | 5V @ 250µA | 56 nC @ 10 V | ±25V | 2500 pF @ 100 V | - | 250W (Tc) | -55°C ~ 150°C (TJ) | Through Hole |
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