Грузовой вагон ( )| Таблицы данных | Фотографии | Производитель. Часть # | Акции | Цены | А | Packaging | Series | ProductStatus | FETType | Technology | DraintoSourceVoltage(Vdss) | Current-ContinuousDrain(Id)@25°C | DriveVoltage(MaxRdsOnMinRdsOn) | RdsOn(Max)@IdVgs | Vgs(th)(Max)@Id | GateCharge(Qg)(Max)@Vgs | Vgs(Max) | InputCapacitance(Ciss)(Max)@Vds | FETFeature | PowerDissipation(Max) | OperatingTemperature | MountingType |
|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|
Таблицы данных |
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IPW60R120P7XKSA1MOSFET N-CH 600V 26A TO247-3 |
3286 | 6.13 |
ДобавитьРасследования |
Tube | CoolMOS™ P7 | Active | N-Channel | MOSFET (Metal Oxide) | 600 V | 26A (Tc) | 10V | 120mOhm @ 8.2A, 10V | 4V @ 410µA | 36 nC @ 10 V | ±20V | 1544 pF @ 400 V | - | 95W (Tc) | -55°C ~ 150°C (TJ) | Through Hole |
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Таблицы данных |
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STW11NM80MOSFET N-CH 800V 11A TO247-3 |
2523 | 6.16 |
ДобавитьРасследования |
Tube | MDmesh™ | Active | N-Channel | MOSFET (Metal Oxide) | 800 V | 11A (Tc) | 10V | 400mOhm @ 5.5A, 10V | 5V @ 250µA | 43.6 nC @ 10 V | ±30V | 1630 pF @ 25 V | - | 150W (Tc) | -65°C ~ 150°C (TJ) | Through Hole |
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Таблицы данных |
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R6030ENXMOSFET N-CH 600V 30A TO220FM |
2757 | 6.17 |
ДобавитьРасследования |
Bulk | - | Active | N-Channel | MOSFET (Metal Oxide) | 600 V | 30A (Tc) | 10V | 130mOhm @ 14.5A, 10V | 4V @ 1mA | 85 nC @ 10 V | ±30V | 2100 pF @ 25 V | - | 40W (Tc) | 150°C (TJ) | Through Hole |
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Таблицы данных |
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IPP65R125C7XKSA1MOSFET N-CH 650V 18A TO220-3 |
2216 | 1.00 |
ДобавитьРасследования |
Bulk,Tube | CoolMOS™ C7 | Active | N-Channel | MOSFET (Metal Oxide) | 650 V | 18A (Tc) | 10V | 125mOhm @ 8.9A, 10V | 4V @ 440µA | 35 nC @ 10 V | ±20V | 1670 pF @ 400 V | - | 101W (Tc) | -55°C ~ 150°C (TJ) | Through Hole |
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Таблицы данных |
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IPA50R140CPXKSA1MOSFET N-CH 500V 23A TO220-FP |
2607 | 6.52 |
ДобавитьРасследования |
Tube | CoolMOS™ | Not For New Designs | N-Channel | MOSFET (Metal Oxide) | 500 V | 23A (Tc) | 10V | 140mOhm @ 14A, 10V | 3.5V @ 930µA | 64 nC @ 10 V | ±20V | 2540 pF @ 100 V | - | 34W (Tc) | -55°C ~ 150°C (TJ) | Through Hole |
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Таблицы данных |
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STW40N65M2MOSFET N-CH 650V 32A TO247 |
2809 | 6.55 |
ДобавитьРасследования |
Tube | MDmesh™ M2 | Active | N-Channel | MOSFET (Metal Oxide) | 650 V | 32A (Tc) | 10V | 99mOhm @ 16A, 10V | 4V @ 250µA | 56.5 nC @ 10 V | ±25V | 2355 pF @ 100 V | - | 250W (Tc) | 150°C (TJ) | Through Hole |
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Таблицы данных |
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SIHG24N65EF-GE3MOSFET N-CH 650V 24A TO247AC |
3396 | 6.56 |
ДобавитьРасследования |
Tube | E | Active | N-Channel | MOSFET (Metal Oxide) | 650 V | 24A (Tc) | 10V | 156mOhm @ 12A, 10V | 4V @ 250µA | 122 nC @ 10 V | ±30V | 2774 pF @ 100 V | - | 250W (Tc) | -55°C ~ 150°C (TJ) | Through Hole |
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Таблицы данных |
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STP38N65M5MOSFET N-CH 650V 30A TO220 |
2554 | 6.18 |
ДобавитьРасследования |
Tube | MDmesh™ V | Active | N-Channel | MOSFET (Metal Oxide) | 650 V | 30A (Tc) | 10V | 95mOhm @ 15A, 10V | 5V @ 250µA | 71 nC @ 10 V | ±25V | 3000 pF @ 100 V | - | 190W (Tc) | 150°C (TJ) | Through Hole |
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Таблицы данных |
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NVMTS0D4N04CTXGMOSFET N-CH 40V 79.8A/558A 8DFNW |
2580 | 11.32 |
ДобавитьРасследования |
Tape & Reel (TR),Cut Tape (CT),Digi-Reel® | Automotive, AEC-Q101 | Active | N-Channel | MOSFET (Metal Oxide) | 40 V | 79.8A (Ta), 558A (Tc) | 10V | 0.45mOhm @ 50A, 10V | 4V @ 250µA | 251 nC @ 10 V | ±20V | 16500 pF @ 20 V | - | 5W | -55°C ~ 175°C (TJ) | Surface Mount |
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Таблицы данных |
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FCH104N60FMOSFET N-CH 600V 37A TO247-3 |
3238 | 6.24 |
ДобавитьРасследования |
Tube | HiPerFET™, Polar™ | Active | N-Channel | MOSFET (Metal Oxide) | 600 V | 37A (Tc) | 10V | 104mOhm @ 18.5A, 10V | 5V @ 250µA | 139 nC @ 10 V | ±20V | 5950 pF @ 100 V | - | 357W (Tc) | -55°C ~ 150°C (TJ) | Through Hole |
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Таблицы данных |
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SIHP30N60E-GE3MOSFET N-CH 600V 29A TO220AB |
2449 | 6.27 |
ДобавитьРасследования |
Tube | E | Active | N-Channel | MOSFET (Metal Oxide) | 600 V | 29A (Tc) | 10V | 125mOhm @ 15A, 10V | 4V @ 250µA | 130 nC @ 10 V | ±30V | 2600 pF @ 100 V | - | 250W (Tc) | -55°C ~ 150°C (TJ) | Through Hole |
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Таблицы данных |
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IPA60R125P6XKSA1MOSFET N-CH 600V 30A TO220-FP |
2533 | 1.00 |
ДобавитьРасследования |
Bulk,Tube | CoolMOS™ P6 | Active | N-Channel | MOSFET (Metal Oxide) | 600 V | 30A (Tc) | 10V | 125mOhm @ 11.6A, 10V | 4.5V @ 960µA | 56 nC @ 10 V | ±20V | 2660 pF @ 100 V | - | 34W (Tc) | -55°C ~ 150°C (TJ) | Through Hole |
|
Таблицы данных |
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IXFA38N30X3MOSFET N-CH 300V 38A TO263 |
3319 | 6.29 |
ДобавитьРасследования |
Tube | HiPerFET™, Ultra X3 | Active | N-Channel | MOSFET (Metal Oxide) | 300 V | 38A (Tc) | 10V | 50mOhm @ 19A, 10V | 4.5V @ 1mA | 35 nC @ 10 V | ±20V | 2240 pF @ 25 V | - | 240W (Tc) | -55°C ~ 150°C (TJ) | Surface Mount |
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Таблицы данных |
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SIHB24N65EF-GE3MOSFET N-CH 650V 24A D2PAK |
2997 | 6.30 |
ДобавитьРасследования |
Tube | E | Active | N-Channel | MOSFET (Metal Oxide) | 650 V | 24A (Tc) | 10V | 156mOhm @ 12A, 10V | 4V @ 250µA | 122 nC @ 10 V | ±30V | 2774 pF @ 100 V | - | 250W (Tc) | -55°C ~ 150°C (TJ) | Surface Mount |
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Таблицы данных |
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IPW60R160C6FKSA1MOSFET N-CH 600V 23.8A TO247-3 |
3026 | 1.00 |
ДобавитьРасследования |
Bulk,Tube | CoolMOS™ | Not For New Designs | N-Channel | MOSFET (Metal Oxide) | 600 V | 23.8A (Tc) | 10V | 160mOhm @ 11.3A, 10V | 3.5V @ 750µA | 75 nC @ 10 V | ±20V | 1660 pF @ 100 V | - | 176W (Tc) | -55°C ~ 150°C (TJ) | Through Hole |
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AOK095A60MOSFET N-CH 600V 38A TO247 |
2139 | 6.56 |
ДобавитьРасследования |
Tube | aMOS5™ | Active | N-Channel | MOSFET (Metal Oxide) | 600 V | 38A (Tc) | 10V | 95mOhm @ 19A, 10V | 3V @ 250µA | 78 nC @ 10 V | ±20V | 4010 pF @ 100 V | - | 378W (Tc) | -55°C ~ 150°C (TJ) | Through Hole |
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Таблицы данных |
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IPW60R125P6XKSA1MOSFET N-CH 600V 30A TO247-3 |
3615 | 1.00 |
ДобавитьРасследования |
Bulk,Tube | CoolMOS™ P6 | Active | N-Channel | MOSFET (Metal Oxide) | 600 V | 30A (Tc) | 10V | 125mOhm @ 11.6A, 10V | 4.5V @ 960µA | 56 nC @ 10 V | ±20V | 2660 pF @ 100 V | - | 219W (Tc) | -55°C ~ 150°C (TJ) | Through Hole |
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Таблицы данных |
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FCH067N65S3-F155MOSFET N-CH 650V 44A TO247 |
3661 | 6.62 |
ДобавитьРасследования |
Tube | SuperFET® III | Active | N-Channel | MOSFET (Metal Oxide) | 650 V | 44A (Tc) | 10V | 67mOhm @ 22A, 10V | 4.5V @ 4.4mA | 78 nC @ 10 V | ±30V | 3090 pF @ 400 V | Super Junction | 312W (Tc) | -55°C ~ 150°C (TJ) | Through Hole |
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Таблицы данных |
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STF11NM80MOSFET N-CH 800V 11A TO220FP |
3457 | 6.65 |
ДобавитьРасследования |
Tube | MDmesh™ | Active | N-Channel | MOSFET (Metal Oxide) | 800 V | 11A (Tc) | 10V | 400mOhm @ 5.5A, 10V | 5V @ 250µA | 43.6 nC @ 10 V | ±30V | 1630 pF @ 25 V | - | 35W (Tc) | -65°C ~ 150°C (TJ) | Through Hole |
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Таблицы данных |
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STP11NM80MOSFET N-CH 800V 11A TO220AB |
2305 | 6.65 |
ДобавитьРасследования |
Tube | MDmesh™ | Active | N-Channel | MOSFET (Metal Oxide) | 800 V | 11A (Tc) | 10V | 400mOhm @ 5.5A, 10V | 5V @ 250µA | 43.6 nC @ 10 V | ±30V | 1630 pF @ 25 V | - | 150W (Tc) | -65°C ~ 150°C (TJ) | Through Hole |
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