Грузовой вагон ( )| Таблицы данных | Фотографии | Производитель. Часть # | Акции | Цены | А | Packaging | Series | ProductStatus | FETType | Technology | DraintoSourceVoltage(Vdss) | Current-ContinuousDrain(Id)@25°C | DriveVoltage(MaxRdsOnMinRdsOn) | RdsOn(Max)@IdVgs | Vgs(th)(Max)@Id | GateCharge(Qg)(Max)@Vgs | Vgs(Max) | InputCapacitance(Ciss)(Max)@Vds | FETFeature | PowerDissipation(Max) | OperatingTemperature | MountingType |
|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|
Таблицы данных |
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STP11NM60FDMOSFET N-CH 600V 11A TO220AB |
3839 | 5.56 |
ДобавитьРасследования |
Tube | FDmesh™ | Active | N-Channel | MOSFET (Metal Oxide) | 600 V | 11A (Tc) | 10V | 450mOhm @ 5.5A, 10V | 5V @ 250µA | 40 nC @ 10 V | ±30V | 900 pF @ 25 V | - | 160W (Tc) | - | Through Hole |
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Таблицы данных |
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TK17N65W,S1FMOSFET N-CH 650V 17.3A TO247 |
2592 | 3.67 |
ДобавитьРасследования |
Tube | DTMOSIV | Active | N-Channel | MOSFET (Metal Oxide) | 650 V | 17.3A (Ta) | 10V | 200mOhm @ 8.7A, 10V | 3.5V @ 900µA | 45 nC @ 10 V | ±30V | 1800 pF @ 300 V | - | 165W (Tc) | 150°C (TJ) | Through Hole |
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Таблицы данных |
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IRFPG30PBFMOSFET N-CH 1000V 3.1A TO247-3 |
3445 | 3.71 |
ДобавитьРасследования |
Tube | - | Active | N-Channel | MOSFET (Metal Oxide) | 1000 V | 3.1A (Tc) | 10V | 5Ohm @ 1.9A, 10V | 4V @ 250µA | 80 nC @ 10 V | ±20V | 980 pF @ 25 V | - | 125W (Tc) | -55°C ~ 150°C (TJ) | Through Hole |
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Таблицы данных |
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SQD40N10-25_GE3MOSFET N-CH 100V 40A TO252 |
2000 | 6.67 |
ДобавитьРасследования |
Tape & Reel (TR),Cut Tape (CT),Digi-Reel® | TrenchFET® | Active | N-Channel | MOSFET (Metal Oxide) | 100 V | 40A (Tc) | 4.5V, 10V | 25mOhm @ 40A, 10V | 2.5V @ 250µA | 70 nC @ 10 V | ±20V | 3380 pF @ 25 V | - | 136W (Tc) | -55°C ~ 175°C (TJ) | Surface Mount |
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Таблицы данных |
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NVB072N65S3MOSFET N-CH 650V 44A D2PAK-3 |
3448 | 1.00 |
ДобавитьРасследования |
Tape & Reel (TR),Cut Tape (CT),Digi-Reel®,Bulk | Automotive, AEC-Q101, SuperFET® III, FRFET® | Active | N-Channel | MOSFET (Metal Oxide) | 650 V | 44A (Tc) | 10V | 72mOhm @ 24A, 10V | 4.5V @ 1mA | 82 nC @ 10 V | ±30V | 330 pF @ 400 V | - | 312W (Tc) | -55°C ~ 150°C (TJ) | Surface Mount |
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Таблицы данных |
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STF15N80K5MOSFET N-CH 800V 14A TO220FP |
2906 | 5.65 |
ДобавитьРасследования |
Tube | SuperMESH5™ | Active | N-Channel | MOSFET (Metal Oxide) | 800 V | 14A (Tc) | 10V | 375mOhm @ 7A, 10V | 5V @ 100µA | 32 nC @ 10 V | ±30V | 1100 pF @ 100 V | - | 35W (Tc) | -55°C ~ 150°C (TJ) | Through Hole |
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Таблицы данных |
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STP33N60DM6MOSFET N-CH 600V 25A TO220 |
2188 | 5.65 |
ДобавитьРасследования |
Tube | MDmesh™ M6 | Active | N-Channel | MOSFET (Metal Oxide) | 600 V | 25A (Tc) | 10V | 128mOhm @ 12.5A, 10V | 4.75V @ 250µA | 35 nC @ 10 V | ±25V | 1500 pF @ 100 V | - | 190W (Tc) | -55°C ~ 150°C (TJ) | Through Hole |
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Таблицы данных |
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SIHG17N80E-GE3MOSFET N-CH 800V 15A TO247AC |
2219 | 5.67 |
ДобавитьРасследования |
Tube | E | Active | N-Channel | MOSFET (Metal Oxide) | 800 V | 15A (Tc) | 10V | 290mOhm @ 8.5A, 10V | 4V @ 250µA | 122 nC @ 10 V | ±30V | 2408 pF @ 100 V | - | 208W (Tc) | -55°C ~ 150°C (TJ) | Through Hole |
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Таблицы данных |
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STW27N60M2-EPMOSFET N-CH 600V 20A TO247-3 |
2661 | 5.68 |
ДобавитьРасследования |
Tube | MDmesh™ M2-EP | Active | N-Channel | MOSFET (Metal Oxide) | 600 V | 20A (Tc) | 10V | 163mOhm @ 10A, 10V | 4.75V @ 250µA | 33 nC @ 10 V | ±25V | 1320 pF @ 100 V | - | 170W (Tc) | -55°C ~ 150°C (TJ) | Through Hole |
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Таблицы данных |
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MSJP20N65-BPMOSFET N-CH TO220AB |
2531 | 5.73 |
ДобавитьРасследования |
Tube | - | Active | - | - | - | 20A (Tc) | - | - | - | - | - | - | - | - | - | Through Hole |
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Таблицы данных |
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FDP2710MOSFET N-CH 250V 50A TO220-3 |
800 | 4.53 |
ДобавитьРасследования |
Bulk,Tube | PowerTrench® | Active | N-Channel | MOSFET (Metal Oxide) | 250 V | 50A (Tc) | 10V | 42.5mOhm @ 25A, 10V | 5V @ 250µA | 101 nC @ 10 V | ±30V | 7280 pF @ 25 V | - | 260W (Tc) | -55°C ~ 150°C (TJ) | Through Hole |
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Таблицы данных |
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STF17N80K5MOSFET N-CH 800V 14A TO220FP |
3999 | 5.80 |
ДобавитьРасследования |
Tube | MDmesh™ K5 | Active | N-Channel | MOSFET (Metal Oxide) | 800 V | 14A (Tc) | 10V | 340mOhm @ 7A, 10V | 5V @ 250µA | 26 nC @ 10 V | ±30V | 866 pF @ 100 V | - | 30W (Tc) | -55°C ~ 150°C (TJ) | Through Hole |
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Таблицы данных |
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SIHB068N60EF-GE3MOSFET N-CH 600V 41A D2PAK |
2403 | 5.81 |
ДобавитьРасследования |
Tube | EF | Active | N-Channel | MOSFET (Metal Oxide) | 600 V | 41A (Tc) | 10V | 68mOhm @ 16A, 10V | 5V @ 250µA | 77 nC @ 10 V | ±30V | 2628 pF @ 100 V | - | 250W (Tc) | -55°C ~ 150°C (TJ) | Surface Mount |
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Таблицы данных |
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IPB60R070CFD7ATMA1MOSFET N-CH 650V 31A TO263-3-2 |
2019 | 7.76 |
ДобавитьРасследования |
Tape & Reel (TR),Cut Tape (CT),Digi-Reel® | CoolMOS™ CFD7 | Active | N-Channel | MOSFET (Metal Oxide) | 650 V | 31A (Tc) | 10V | 70mOhm @ 15.1A, 10V | 4.5V @ 760µA | 67 nC @ 10 V | ±20V | 2721 pF @ 400 V | - | 156W (Tc) | -55°C ~ 150°C (TJ) | Surface Mount |
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Таблицы данных |
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STF23NM50NMOSFET N-CH 500V 17A TO220FP |
2885 | 5.89 |
ДобавитьРасследования |
Tube | MDmesh™ II | Active | N-Channel | MOSFET (Metal Oxide) | 500 V | 17A (Tc) | 10V | 190mOhm @ 8.5A, 10V | 4V @ 250µA | 45 nC @ 10 V | ±25V | 1330 pF @ 50 V | - | 30W (Tc) | 150°C (TJ) | Through Hole |
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Таблицы данных |
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IPW60R190E6FKSA1MOSFET N-CH 600V 20.2A TO247-3 |
2369 | 5.14 |
ДобавитьРасследования |
Tube | CoolMOS™ | Not For New Designs | N-Channel | MOSFET (Metal Oxide) | 600 V | 20.2A (Tc) | 10V | 190mOhm @ 9.5A, 10V | 3.5V @ 630µA | 63 nC @ 10 V | ±20V | 1400 pF @ 100 V | - | 151W (Tc) | -55°C ~ 150°C (TJ) | Through Hole |
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Таблицы данных |
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SIHP24N65E-GE3MOSFET N-CH 650V 24A TO220AB |
3189 | 5.98 |
ДобавитьРасследования |
Tube | - | Active | N-Channel | MOSFET (Metal Oxide) | 650 V | 24A (Tc) | 10V | 145mOhm @ 12A, 10V | 4V @ 250µA | 122 nC @ 10 V | ±30V | 2740 pF @ 100 V | - | 250W (Tc) | -55°C ~ 150°C (TJ) | Through Hole |
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Таблицы данных |
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AOK27S60LMOSFET N-CH 600V 27A TO247 |
2840 | 6.02 |
ДобавитьРасследования |
Tube | aMOS™ | Not For New Designs | N-Channel | MOSFET (Metal Oxide) | 600 V | 27A (Tc) | 10V | 160mOhm @ 13.5A, 10V | 4V @ 250µA | 26 nC @ 10 V | ±30V | 1294 pF @ 100 V | - | 357W (Tc) | -55°C ~ 150°C (TJ) | Through Hole |
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Таблицы данных |
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STW33N60M2MOSFET N-CH 600V 26A TO247 |
2631 | 6.02 |
ДобавитьРасследования |
Tube | MDmesh™ II Plus | Active | N-Channel | MOSFET (Metal Oxide) | 600 V | 26A (Tc) | 10V | 125mOhm @ 13A, 10V | 4V @ 250µA | 45.5 nC @ 10 V | ±25V | 1781 pF @ 100 V | - | 190W (Tc) | -55°C ~ 150°C (TJ) | Through Hole |
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Таблицы данных |
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STP35N60DM2MOSFET N-CH 600V 28A TO220 |
2636 | 6.10 |
ДобавитьРасследования |
Tube | MDmesh™ DM2 | Active | N-Channel | MOSFET (Metal Oxide) | 600 V | 28A (Tc) | 10V | 110mOhm @ 14A, 10V | 5V @ 250µA | 54 nC @ 10 V | ±25V | 2400 pF @ 100 V | - | 210W (Tc) | -55°C ~ 150°C (TJ) | Through Hole |
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