Грузовой вагон ( )| Таблицы данных | Фотографии | Производитель. Часть # | Акции | Цены | А | Packaging | Series | ProductStatus | FETType | Technology | DraintoSourceVoltage(Vdss) | Current-ContinuousDrain(Id)@25°C | DriveVoltage(MaxRdsOnMinRdsOn) | RdsOn(Max)@IdVgs | Vgs(th)(Max)@Id | GateCharge(Qg)(Max)@Vgs | Vgs(Max) | InputCapacitance(Ciss)(Max)@Vds | FETFeature | PowerDissipation(Max) | OperatingTemperature | MountingType |
|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|
Таблицы данных |
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STF21N65M5MOSFET N-CH 650V 17A TO220FP |
3575 | 5.13 |
ДобавитьРасследования |
Tube | MDmesh™ V | Active | N-Channel | MOSFET (Metal Oxide) | 650 V | 17A (Tc) | 10V | 190mOhm @ 8.5A, 10V | 5V @ 250µA | 50 nC @ 10 V | ±25V | 1950 pF @ 100 V | - | 30W (Tc) | 150°C (TJ) | Through Hole |
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Таблицы данных |
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STW13N80K5MOSFET N-CH 800V 12A TO247 |
3645 | 5.14 |
ДобавитьРасследования |
Tube | SuperMESH5™ | Active | N-Channel | MOSFET (Metal Oxide) | 800 V | 12A (Tc) | 10V | 450mOhm @ 6A, 10V | 5V @ 100µA | 29 nC @ 10 V | ±30V | 870 pF @ 100 V | - | 190W (Tc) | -55°C ~ 150°C (TJ) | Through Hole |
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Таблицы данных |
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NTMTS0D6N04CTXGMOSFET N-CH 40V 533A |
3502 | 9.46 |
ДобавитьРасследования |
Tape & Reel (TR),Cut Tape (CT),Digi-Reel® | - | Active | N-Channel | MOSFET (Metal Oxide) | 40 V | 533A (Tc) | 10V | 0.48mOhm @ 50A, 10V | 4V @ 250µA | 187 nC @ 10 V | ±20V | 11800 pF @ 20 V | - | 5W | -55°C ~ 175°C (TJ) | Surface Mount |
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Таблицы данных |
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STF8NK100ZMOSFET N-CH 1000V 6.5A TO220FP |
2575 | 5.18 |
ДобавитьРасследования |
Tube | SuperMESH™ | Active | N-Channel | MOSFET (Metal Oxide) | 1000 V | 6.5A (Tc) | 10V | 1.85Ohm @ 3.15A, 10V | 4.5V @ 100µA | 102 nC @ 10 V | ±30V | 2180 pF @ 25 V | - | 40W (Tc) | -55°C ~ 150°C (TJ) | Through Hole |
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IXTQ60N20TMOSFET N-CH 200V 60A TO3P |
3795 | 5.19 |
ДобавитьРасследования |
Tube | Trench | Active | N-Channel | MOSFET (Metal Oxide) | 200 V | 60A (Tc) | 10V | 40mOhm @ 30A, 10V | 5V @ 250µA | 73 nC @ 10 V | ±20V | 4530 pF @ 25 V | - | 500W (Ta) | -55°C ~ 175°C (TJ) | Through Hole |
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Таблицы данных |
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IRLSL4030PBFMOSFET N-CH 100V 180A TO262 |
2367 | 5.21 |
ДобавитьРасследования |
Tube | HEXFET® | Active | N-Channel | MOSFET (Metal Oxide) | 100 V | 180A (Tc) | 4.5V, 10V | 4.3mOhm @ 110A, 10V | 2.5V @ 250µA | 130 nC @ 4.5 V | ±16V | 11360 pF @ 50 V | - | 370W (Tc) | -55°C ~ 175°C (TJ) | Through Hole |
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Таблицы данных |
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IXTQ16N50PMOSFET N-CH 500V 16A TO3P |
3418 | 5.23 |
ДобавитьРасследования |
Tube | Polar | Active | N-Channel | MOSFET (Metal Oxide) | 500 V | 16A (Tc) | 10V | 400mOhm @ 8A, 10V | 5.5V @ 250µA | 43 nC @ 10 V | ±30V | 2250 pF @ 25 V | - | 300W (Tc) | -55°C ~ 150°C (TJ) | Through Hole |
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Таблицы данных |
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IPW65R190C7XKSA1MOSFET N-CH 650V 13A TO247-3 |
480 | 5.28 |
ДобавитьРасследования |
Bulk,Tube | CoolMOS™ C7 | Active | N-Channel | MOSFET (Metal Oxide) | 650 V | 13A (Tc) | 10V | 190mOhm @ 5.7A, 10V | 4V @ 290µA | 23 nC @ 10 V | ±20V | 1150 pF @ 400 V | - | 72W (Tc) | -55°C ~ 150°C (TJ) | Through Hole |
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Таблицы данных |
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IRFP048RPBFMOSFET N-CH 60V 70A TO247-3 |
2113 | 5.30 |
ДобавитьРасследования |
Tube | - | Active | N-Channel | MOSFET (Metal Oxide) | 60 V | 70A (Tc) | 10V | 18mOhm @ 44A, 10V | 4V @ 250µA | 110 nC @ 10 V | ±20V | 2400 pF @ 25 V | - | 190W (Tc) | -55°C ~ 175°C (TJ) | Through Hole |
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Таблицы данных |
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STF33N60M6MOSFET N-CH 600V 25A TO220FP |
3460 | 5.32 |
ДобавитьРасследования |
Tube | MDmesh™ M6 | Active | N-Channel | MOSFET (Metal Oxide) | 600 V | 25A (Tc) | 10V | 125mOhm @ 12.5A, 10V | 4.75V @ 250µA | 33.4 nC @ 10 V | ±25V | 1515 pF @ 100 V | - | 35W (Tc) | -55°C ~ 150°C (TJ) | Through Hole |
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Таблицы данных |
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STP33N60M6MOSFET N-CH 600V 25A TO220 |
2965 | 5.32 |
ДобавитьРасследования |
Tube | MDmesh™ M6 | Active | N-Channel | MOSFET (Metal Oxide) | 600 V | 25A (Tc) | 10V | 125mOhm @ 12.5A, 10V | 4.75V @ 250µA | 33.4 nC @ 10 V | ±25V | 1515 pF @ 100 V | - | 190W (Tc) | -55°C ~ 150°C (TJ) | Through Hole |
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Таблицы данных |
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IPP65R150CFDXKSA1MOSFET N-CH 650V 22.4A TO220-3 |
3269 | 5.36 |
ДобавитьРасследования |
Tube | CoolMOS™ | Not For New Designs | N-Channel | MOSFET (Metal Oxide) | 650 V | 22.4A (Tc) | 10V | 150mOhm @ 9.3A, 10V | 4.5V @ 900µA | 86 nC @ 10 V | ±20V | 2340 pF @ 100 V | - | 195.3W (Tc) | -55°C ~ 150°C (TJ) | Through Hole |
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Таблицы данных |
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IPA65R150CFDXKSA1MOSFET N-CH 650V 22.4A TO220 |
2441 | 1.00 |
ДобавитьРасследования |
Bulk,Tube | CoolMOS™ | Not For New Designs | N-Channel | MOSFET (Metal Oxide) | 650 V | 22.4A (Tc) | 10V | 150mOhm @ 9.3A, 10V | 4.5V @ 1mA | 86 nC @ 10 V | ±20V | 2340 pF @ 100 V | - | 34.7W (Tc) | -55°C ~ 150°C (TJ) | Through Hole |
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Таблицы данных |
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IPP65R150CFDXKSA2MOSFET N-CH 650V 22.4A TO220-3 |
3313 | 5.36 |
ДобавитьРасследования |
Tube | CoolMOS™ CFD2 | Active | N-Channel | MOSFET (Metal Oxide) | 650 V | 22.4A (Tc) | 10V | 150mOhm @ 9.3A, 10V | 4.5V @ 900µA | 86 nC @ 10 V | ±20V | 2340 pF @ 100 V | - | 195.3W (Tc) | -55°C ~ 150°C (TJ) | Through Hole |
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Таблицы данных |
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IXTQ75N10PMOSFET N-CH 100V 75A TO3P |
3463 | 5.44 |
ДобавитьРасследования |
Tube | Polar | Active | N-Channel | MOSFET (Metal Oxide) | 100 V | 75A (Tc) | 10V | 25mOhm @ 500mA, 10V | 5.5V @ 250µA | 74 nC @ 10 V | ±20V | 2250 pF @ 25 V | - | 360W (Tc) | -55°C ~ 175°C (TJ) | Through Hole |
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Таблицы данных |
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SIHG25N60EFL-GE3MOSFET N-CH 600V 25A TO247AC |
3241 | 5.44 |
ДобавитьРасследования |
Tube | E | Active | N-Channel | MOSFET (Metal Oxide) | 600 V | 25A (Tc) | 10V | 146mOhm @ 12.5A, 10V | 5V @ 250µA | 75 nC @ 10 V | ±30V | 2274 pF @ 100 V | - | 250W (Tc) | -55°C ~ 150°C (TJ) | Through Hole |
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Таблицы данных |
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IXTP1R6N50D2MOSFET N-CH 500V 1.6A TO220AB |
2268 | 3.00 |
ДобавитьРасследования |
Tube | Depletion | Active | N-Channel | MOSFET (Metal Oxide) | 500 V | 1.6A (Tc) | - | 2.3Ohm @ 800mA, 0V | - | 23.7 nC @ 5 V | ±20V | 645 pF @ 25 V | Depletion Mode | 100W (Tc) | -55°C ~ 150°C (TJ) | Through Hole |
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SIHB21N80AE-GE3MOSFET N-CH 800V 17.4A D2PAK |
3616 | 3.04 |
ДобавитьРасследования |
Tube | E | Active | N-Channel | MOSFET (Metal Oxide) | 800 V | 17.4A (Tc) | 10V | 235mOhm @ 11A, 10V | 4V @ 250µA | 72 nC @ 10 V | ±30V | 1388 pF @ 100 V | - | 32W (Tc) | -55°C ~ 150°C (TJ) | Surface Mount |
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Таблицы данных |
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IPB65R110CFDAATMA1MOSFET N-CH 650V 31.2A D2PAK |
3276 | 8.93 |
ДобавитьРасследования |
Tape & Reel (TR),Cut Tape (CT),Digi-Reel® | Automotive, AEC-Q101, CoolMOS™ | Active | N-Channel | MOSFET (Metal Oxide) | 650 V | 31.2A (Tc) | 10V | 110mOhm @ 12.7A, 10V | 4.5V @ 1.3mA | 118 nC @ 10 V | ±20V | 3240 pF @ 100 V | - | 277.8W (Tc) | -40°C ~ 150°C (TJ) | Surface Mount |
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Таблицы данных |
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SIHA120N60E-GE3MOSFET N-CH 600V 25A TO220 |
3534 | 5.50 |
ДобавитьРасследования |
Bulk | E | Active | N-Channel | MOSFET (Metal Oxide) | 600 V | 25A (Tc) | 10V | 120mOhm @ 12A, 10V | 5V @ 250µA | 45 nC @ 10 V | ±30V | 1562 pF @ 100 V | - | 34W (Tc) | -55°C ~ 150°C (TJ) | Through Hole |
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