Грузовой вагон ( )| Таблицы данных | Фотографии | Производитель. Часть # | Акции | Цены | А | Packaging | Series | ProductStatus | FETType | Technology | DraintoSourceVoltage(Vdss) | Current-ContinuousDrain(Id)@25°C | DriveVoltage(MaxRdsOnMinRdsOn) | RdsOn(Max)@IdVgs | Vgs(th)(Max)@Id | GateCharge(Qg)(Max)@Vgs | Vgs(Max) | InputCapacitance(Ciss)(Max)@Vds | FETFeature | PowerDissipation(Max) | OperatingTemperature | MountingType |
|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|
Таблицы данных |
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SQJQ404E-T1_GE3MOSFET N-CH 40V 200A PPAK 8 X 8 |
3705 | 2.94 |
ДобавитьРасследования |
Tape & Reel (TR),Cut Tape (CT),Digi-Reel® | Automotive, AEC-Q101, TrenchFET® | Active | N-Channel | MOSFET (Metal Oxide) | 40 V | 200A (Tc) | 10V | 1.72mOhm @ 20A, 10V | 3.5V @ 250µA | 270 nC @ 10 V | ±20V | 16480 pF @ 25 V | - | 150W (Tc) | -55°C ~ 175°C (TJ) | Surface Mount |
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Таблицы данных |
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SPU02N60C3BKMA1MOSFET N-CH 650V 1.8A TO251-3 |
3563 | 1.67 |
ДобавитьРасследования |
Tube | CoolMOS™ | Not For New Designs | N-Channel | MOSFET (Metal Oxide) | 650 V | 1.8A (Tc) | 10V | 3Ohm @ 1.1A, 10V | 3.9V @ 80µA | 12.5 nC @ 10 V | ±20V | 200 pF @ 25 V | - | 25W (Tc) | -55°C ~ 150°C (TJ) | Through Hole |
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Таблицы данных |
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IPA70R450P7SXKSA1MOSFET N-CH 700V 10A TO220 |
3926 | 1.67 |
ДобавитьРасследования |
Tube | CoolMOS™ P7 | Active | N-Channel | MOSFET (Metal Oxide) | 700 V | 10A (Tc) | 10V | 450mOhm @ 2.3A, 10V | 3.5V @ 120µA | 13.1 nC @ 400 V | ±16V | 424 pF @ 400 V | - | 22.7W (Tc) | -40°C ~ 150°C (TJ) | Through Hole |
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Таблицы данных |
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IRFUC20PBFMOSFET N-CH 600V 2A TO251AA |
3641 | 1.68 |
ДобавитьРасследования |
Tube | - | Active | N-Channel | MOSFET (Metal Oxide) | 600 V | 2A (Tc) | 10V | 4.4Ohm @ 1.2A, 10V | 4V @ 250µA | 18 nC @ 10 V | ±20V | 350 pF @ 25 V | - | 2.5W (Ta), 42W (Tc) | -55°C ~ 150°C (TJ) | Through Hole |
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Таблицы данных |
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IRF710SPBFMOSFET N-CH 400V 2A D2PAK |
2327 | 1.68 |
ДобавитьРасследования |
Tube | - | Active | N-Channel | MOSFET (Metal Oxide) | 400 V | 2A (Tc) | 10V | 3.6Ohm @ 1.2A, 10V | 4V @ 250µA | 17 nC @ 10 V | ±20V | 170 pF @ 25 V | - | 3.1W (Ta), 36W (Tc) | -55°C ~ 150°C (TJ) | Surface Mount |
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Таблицы данных |
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SIHP6N40D-E3MOSFET N-CH 400V 6A TO220AB |
2518 | 1.68 |
ДобавитьРасследования |
Tube | - | Active | N-Channel | MOSFET (Metal Oxide) | 400 V | 6A (Tc) | 10V | 1Ohm @ 3A, 10V | 5V @ 250µA | 18 nC @ 10 V | ±30V | 311 pF @ 100 V | - | 104W (Tc) | -55°C ~ 150°C (TJ) | Through Hole |
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Таблицы данных |
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STF5N60M2MOSFET N-CH 600V 3.7A TO220FP |
1984 | 1.68 |
ДобавитьРасследования |
Tube | MDmesh™ II Plus | Active | N-Channel | MOSFET (Metal Oxide) | 600 V | 3.7A (Tc) | 10V | 1.4Ohm @ 1.85A, 10V | 4V @ 250µA | 4.5 nC @ 10 V | ±25V | 165 pF @ 100 V | - | 20W (Tc) | 150°C (TJ) | Through Hole |
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Таблицы данных |
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SIHD6N65E-GE3MOSFET N-CH 650V 7A DPAK |
3610 | 1.69 |
ДобавитьРасследования |
Tube | - | Active | N-Channel | MOSFET (Metal Oxide) | 650 V | 7A (Tc) | 10V | 600mOhm @ 3A, 10V | 4V @ 250µA | 48 nC @ 10 V | ±30V | 820 pF @ 100 V | - | 78W (Tc) | -55°C ~ 150°C (TJ) | Surface Mount |
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Таблицы данных |
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NVMFS6H818NWFT1GMOSFET N-CH 80V 20A/123A 5DFN |
2494 | 1.00 |
ДобавитьРасследования |
Tape & Reel (TR),Cut Tape (CT),Digi-Reel®,Bulk | Automotive, AEC-Q101 | Active | N-Channel | MOSFET (Metal Oxide) | 80 V | 20A (Ta), 123A (Tc) | 10V | 3.7mOhm @ 20A, 10V | 4V @ 190µA | 46 nC @ 10 V | ±20V | 3100 pF @ 40 V | - | 3.8W (Ta), 136W (Tc) | -55°C ~ 175°C (TJ) | Surface Mount |
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Таблицы данных |
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STP55NF06MOSFET N-CH 60V 50A TO220AB |
3641 | 1.70 |
ДобавитьРасследования |
Tube | STripFET™ II | Active | N-Channel | MOSFET (Metal Oxide) | 60 V | 50A (Tc) | 10V | 18mOhm @ 27.5A, 10V | 4V @ 250µA | 60 nC @ 10 V | ±20V | 1300 pF @ 25 V | - | 110W (Tc) | -55°C ~ 175°C (TJ) | Through Hole |
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Таблицы данных |
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STU3N80K5MOSFET N-CH 800V 2.5A IPAK |
3641 | 1.70 |
ДобавитьРасследования |
Tube | SuperMESH5™ | Active | N-Channel | MOSFET (Metal Oxide) | 800 V | 2.5A (Tc) | 10V | 3.5Ohm @ 1A, 10V | 5V @ 100µA | 9.5 nC @ 10 V | ±30V | 130 pF @ 100 V | - | 60W (Tc) | -55°C ~ 150°C (TJ) | Through Hole |
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Таблицы данных |
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IRFD310PBFMOSFET N-CH 400V 350MA 4DIP |
2725 | 1.71 |
ДобавитьРасследования |
Tube | - | Active | N-Channel | MOSFET (Metal Oxide) | 400 V | 350mA (Ta) | 10V | 3.6Ohm @ 210mA, 10V | 4V @ 250µA | 17 nC @ 10 V | ±20V | 170 pF @ 25 V | - | 1W (Ta) | -55°C ~ 150°C (TJ) | Through Hole |
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Таблицы данных |
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STP9NK60ZFPMOSFET N-CH 600V 7A TO220FP |
2699 | 1.71 |
ДобавитьРасследования |
Tube | SuperMESH™ | Active | N-Channel | MOSFET (Metal Oxide) | 600 V | 7A (Tc) | 10V | 950mOhm @ 3.5A, 10V | 4.5V @ 100µA | 53 nC @ 10 V | ±30V | 1110 pF @ 25 V | - | 30W (Tc) | -55°C ~ 150°C (TJ) | Through Hole |
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Таблицы данных |
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RCX160N20MOSFET N-CH 200V 16A TO220FM |
3321 | 1.71 |
ДобавитьРасследования |
Bulk | - | Active | N-Channel | MOSFET (Metal Oxide) | 200 V | 16A (Tc) | 10V | 180mOhm @ 8A, 10V | 5.25V @ 1mA | 26 nC @ 10 V | ±30V | 1370 pF @ 25 V | - | 2.23W (Ta), 40W (Tc) | 150°C (TJ) | Through Hole |
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Таблицы данных |
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SIHD690N60E-GE3MOSFET N-CH 600V 6.4A DPAK |
2510 | 1.71 |
ДобавитьРасследования |
Tube | E | Active | N-Channel | MOSFET (Metal Oxide) | 600 V | 6.4A (Tc) | 10V | 700mOhm @ 2A, 10V | 5V @ 250µA | 12 nC @ 10 V | ±30V | 347 pF @ 100 V | - | 62.5W (Tc) | -55°C ~ 150°C (TJ) | Surface Mount |
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Таблицы данных |
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IRFZ24PBFMOSFET N-CH 60V 17A TO220AB |
2586 | 1.72 |
ДобавитьРасследования |
Tube | - | Active | N-Channel | MOSFET (Metal Oxide) | 60 V | 17A (Tc) | 10V | 100mOhm @ 10A, 10V | 4V @ 250µA | 25 nC @ 10 V | ±20V | 640 pF @ 25 V | - | 60W (Tc) | -55°C ~ 175°C (TJ) | Through Hole |
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Таблицы данных |
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RCJ300N20TLMOSFET N-CH 200V 30A LPTS |
2604 | 3.23 |
ДобавитьРасследования |
Tape & Reel (TR),Cut Tape (CT),Digi-Reel® | - | Active | N-Channel | MOSFET (Metal Oxide) | 200 V | 30A (Tc) | 10V | 80mOhm @ 15A, 10V | 5V @ 1mA | 60 nC @ 10 V | ±30V | 3200 pF @ 25 V | - | 1.56W (Ta), 40W (Tc) | 150°C (TJ) | Surface Mount |
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Таблицы данных |
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SIHU6N62E-GE3MOSFET N-CH 620V 6A IPAK |
3401 | 1.73 |
ДобавитьРасследования |
Tube | - | Active | N-Channel | MOSFET (Metal Oxide) | 620 V | 6A (Tc) | 10V | 900mOhm @ 3A, 10V | 4V @ 250µA | 34 nC @ 10 V | ±30V | 578 pF @ 100 V | - | 78W (Tc) | -55°C ~ 150°C (TJ) | Through Hole |
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Таблицы данных |
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R6507KNJTLMOSFET N-CH 650V 7A LPTS |
2378 | 3.29 |
ДобавитьРасследования |
Tape & Reel (TR),Cut Tape (CT),Digi-Reel® | - | Active | N-Channel | MOSFET (Metal Oxide) | 650 V | 7A (Tc) | 10V | 665mOhm @ 2.4A, 10V | 5V @ 200µA | 14.5 nC @ 10 V | ±20V | 470 pF @ 25 V | - | 78W (Tc) | 150°C (TJ) | Surface Mount |
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Таблицы данных |
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SIHF8N50D-E3MOSFET N-CH 500V 8.7A TO220 |
3245 | 1.74 |
ДобавитьРасследования |
Tube | - | Active | N-Channel | MOSFET (Metal Oxide) | 500 V | 8.7A (Tc) | 10V | 850mOhm @ 4A, 10V | 5V @ 250µA | 30 nC @ 10 V | ±30V | 527 pF @ 100 V | - | 33W (Tc) | -55°C ~ 150°C (TJ) | Through Hole |
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