Грузовой вагон ( )| Таблицы данных | Фотографии | Производитель. Часть # | Акции | Цены | А | Packaging | Series | ProductStatus | FETType | Technology | DraintoSourceVoltage(Vdss) | Current-ContinuousDrain(Id)@25°C | DriveVoltage(MaxRdsOnMinRdsOn) | RdsOn(Max)@IdVgs | Vgs(th)(Max)@Id | GateCharge(Qg)(Max)@Vgs | Vgs(Max) | InputCapacitance(Ciss)(Max)@Vds | FETFeature | PowerDissipation(Max) | OperatingTemperature | MountingType |
|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|
Таблицы данных |
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TK17E80W,S1XMOSFET N-CHANNEL 800V 17A TO220 |
2454 | 4.37 |
ДобавитьРасследования |
Tube | DTMOSIV | Active | N-Channel | MOSFET (Metal Oxide) | 800 V | 17A (Ta) | 10V | 290mOhm @ 8.5A, 10V | 4V @ 850µA | 32 nC @ 10 V | ±20V | 2050 pF @ 300 V | - | 180W (Tc) | 150°C | Through Hole |
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Таблицы данных |
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SPW15N60C3FKSA1MOSFET N-CH 650V 15A TO247-3 |
2687 | 1.00 |
ДобавитьРасследования |
Bulk,Tube | CoolMOS™ | Not For New Designs | N-Channel | MOSFET (Metal Oxide) | 650 V | 15A (Tc) | 10V | 280mOhm @ 9.4A, 10V | 3.9V @ 675µA | 63 nC @ 10 V | ±20V | 1660 pF @ 25 V | - | 156W (Tc) | -55°C ~ 150°C (TJ) | Through Hole |
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Таблицы данных |
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IXTP60N20TMOSFET N-CH 200V 60A TO220AB |
3356 | 6.21 |
ДобавитьРасследования |
Tube | Trench | Active | N-Channel | MOSFET (Metal Oxide) | 200 V | 60A (Tc) | 10V | 40mOhm @ 30A, 10V | 5V @ 250µA | 73 nC @ 10 V | ±20V | 4530 pF @ 25 V | - | 500W (Tc) | -55°C ~ 175°C (TJ) | Through Hole |
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Таблицы данных |
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IPP030N10N5AKSA1MOSFET N-CH 100V 120A TO220-3 |
2073 | 1.00 |
ДобавитьРасследования |
Bulk,Tube | OptiMOS™ | Active | N-Channel | MOSFET (Metal Oxide) | 100 V | 120A (Tc) | 6V, 10V | 3mOhm @ 100A, 10V | 3.8V @ 184µA | 139 nC @ 10 V | ±20V | 10300 pF @ 50 V | - | 250W (Tc) | -55°C ~ 175°C (TJ) | Through Hole |
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Таблицы данных |
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IPP60R120C7XKSA1MOSFET N-CH 600V 19A TO220-3 |
2303 | 6.29 |
ДобавитьРасследования |
Tube | CoolMOS™ C7 | Active | N-Channel | MOSFET (Metal Oxide) | 600 V | 19A (Tc) | 10V | 120mOhm @ 7.8A, 10V | 4V @ 390µA | 34 nC @ 10 V | ±20V | 1500 pF @ 400 V | - | 92W (Tc) | -55°C ~ 150°C (TJ) | Through Hole |
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Таблицы данных |
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TK25N60X,S1FMOSFET N-CH 600V 25A TO247 |
3295 | 4.44 |
ДобавитьРасследования |
Tube | DTMOSIV-H | Active | N-Channel | MOSFET (Metal Oxide) | 600 V | 25A (Ta) | 10V | 125mOhm @ 7.5A, 10V | 3.5V @ 1.2mA | 40 nC @ 10 V | ±30V | 2400 pF @ 300 V | - | 180W (Tc) | 150°C (TJ) | Through Hole |
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Таблицы данных |
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IXFA270N06T3MOSFET N-CH 60V 270A TO263AA |
3566 | 6.33 |
ДобавитьРасследования |
Tube | HiperFET™, TrenchT3™ | Active | N-Channel | MOSFET (Metal Oxide) | 60 V | 270A (Tc) | 10V | 3.1mOhm @ 100A, 10V | 4V @ 250µA | 200 nC @ 10 V | ±20V | 12600 pF @ 25 V | - | 480W (Tc) | -55°C ~ 175°C (TJ) | Surface Mount |
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Таблицы данных |
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SIHG068N60EF-GE3MOSFET N-CH 600V 41A TO247AC |
3945 | 6.35 |
ДобавитьРасследования |
Tube | EF | Active | N-Channel | MOSFET (Metal Oxide) | 600 V | 41A (Tc) | 10V | 68mOhm @ 16A, 10V | 5V @ 250µA | 77 nC @ 10 V | ±30V | 2628 pF @ 100 V | - | 250W (Tc) | -55°C ~ 150°C (TJ) | Through Hole |
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Таблицы данных |
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IXTP140N12T2MOSFET N-CH 120V 140A TO220AB |
2196 | 6.37 |
ДобавитьРасследования |
Tube | TrenchT2™ | Active | N-Channel | MOSFET (Metal Oxide) | 120 V | 140A (Tc) | 10V | 10mOhm @ 70A, 10V | 4.5V @ 250µA | 174 nC @ 10 V | ±20V | 9700 pF @ 25 V | - | 577W (Tc) | -55°C ~ 175°C (TJ) | Through Hole |
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Таблицы данных |
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STP25N80K5MOSFET N-CH 800V 19.5A TO220 |
3030 | 6.38 |
ДобавитьРасследования |
Tube | SuperMESH5™ | Active | N-Channel | MOSFET (Metal Oxide) | 800 V | 19.5A (Tc) | 10V | 260mOhm @ 19.5A, 10V | 5V @ 100µA | 40 nC @ 10 V | ±30V | 1600 pF @ 100 V | - | 250W (Tc) | -55°C ~ 150°C (TJ) | Through Hole |
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Таблицы данных |
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IRFP4332PBFMOSFET N-CH 250V 57A TO247AC |
3312 | 6.44 |
ДобавитьРасследования |
Tube | HEXFET® | Active | N-Channel | MOSFET (Metal Oxide) | 250 V | 57A (Tc) | 10V | 33mOhm @ 35A, 10V | 5V @ 250µA | 150 nC @ 10 V | ±30V | 5860 pF @ 25 V | - | 360W (Tc) | -40°C ~ 175°C (TJ) | Through Hole |
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Таблицы данных |
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IPI076N15N5AKSA1MV POWER MOS |
3471 | 6.45 |
ДобавитьРасследования |
Tube | OptiMOS™ | Active | N-Channel | MOSFET (Metal Oxide) | 150 V | 112A (Tc) | 8V, 10V | 7.6mOhm @ 56A, 10V | 4.6V @ 160µA | 61 nC @ 10 V | ±20V | 4700 pF @ 75 V | - | 214W (Tc) | -55°C ~ 175°C (TJ) | Through Hole |
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Таблицы данных |
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FCP110N65FMOSFET N-CH 650V 35A TO220-3 |
3417 | 4.55 |
ДобавитьРасследования |
Tube | FRFET®, SuperFET® II | Active | N-Channel | MOSFET (Metal Oxide) | 650 V | 35A (Tc) | 10V | 110mOhm @ 17.5A, 10V | 5V @ 3.5mA | 145 nC @ 10 V | ±20V | 4895 pF @ 100 V | - | 357W (Tc) | -55°C ~ 150°C (TJ) | Through Hole |
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Таблицы данных |
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IXTP01N100DMOSFET N-CH 1000V 400MA TO220AB |
2674 | 6.49 |
ДобавитьРасследования |
Tube | Depletion | Active | N-Channel | MOSFET (Metal Oxide) | 1000 V | 400mA (Tc) | 0V | 80Ohm @ 50mA, 0V | 4.5V @ 25µA | 5.8 nC @ 5 V | ±20V | 100 pF @ 25 V | Depletion Mode | 1.1W (Ta), 25W (Tc) | -55°C ~ 150°C (TJ) | Through Hole |
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Таблицы данных |
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IPP60R165CPXKSA1MOSFET N-CH 600V 21A TO220-3 |
3118 | 6.49 |
ДобавитьРасследования |
Tube | CoolMOS™ | Not For New Designs | N-Channel | MOSFET (Metal Oxide) | 600 V | 21A (Tc) | 10V | 165mOhm @ 12A, 10V | 3.5V @ 790µA | 52 nC @ 10 V | ±20V | 2000 pF @ 100 V | - | 192W (Tc) | -55°C ~ 150°C (TJ) | Through Hole |
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Таблицы данных |
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SIHB28N60EF-GE3MOSFET N-CH 600V 28A D2PAK |
3570 | 6.50 |
ДобавитьРасследования |
Tube | - | Active | N-Channel | MOSFET (Metal Oxide) | 600 V | 28A (Tc) | 10V | 123mOhm @ 14A, 10V | 4V @ 250µA | 120 nC @ 10 V | ±30V | 2714 pF @ 100 V | - | 250W (Tc) | -55°C ~ 150°C (TJ) | Surface Mount |
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Таблицы данных |
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IXTQ52N30PMOSFET N-CH 300V 52A TO3P |
2497 | 6.85 |
ДобавитьРасследования |
Tube | Polar | Active | N-Channel | MOSFET (Metal Oxide) | 300 V | 52A (Tc) | 10V | 66mOhm @ 26A, 10V | 5V @ 250µA | 110 nC @ 10 V | ±20V | 3490 pF @ 25 V | - | 400W (Tc) | -55°C ~ 150°C (TJ) | Through Hole |
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Таблицы данных |
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IPP60R080P7XKSA1MOSFET N-CH 650V 37A TO220-3 |
3773 | 6.85 |
ДобавитьРасследования |
Tube | CoolMOS™ P7 | Active | N-Channel | MOSFET (Metal Oxide) | 650 V | 37A (Tc) | 10V | 80mOhm @ 11.8A, 10V | 4V @ 590µA | 51 nC @ 10 V | ±20V | 2180 pF @ 400 V | - | 129W (Tc) | -55°C ~ 150°C (TJ) | Through Hole |
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Таблицы данных |
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IXTP130N15X4MOSFET N-CH 150V 130A TO220 |
3376 | 6.85 |
ДобавитьРасследования |
Tube | Ultra X4 | Active | N-Channel | MOSFET (Metal Oxide) | 150 V | 130A (Tc) | 10V | 8.5mOhm @ 70A, 10V | 4.5V @ 250µA | 87 nC @ 10 V | ±20V | 4770 pF @ 25 V | - | 400W (Tc) | -55°C ~ 150°C (TJ) | Through Hole |
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Таблицы данных |
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STW11NK90ZMOSFET N-CH 900V 9.2A TO247-3 |
3560 | 6.90 |
ДобавитьРасследования |
Tube | SuperMESH™ | Active | N-Channel | MOSFET (Metal Oxide) | 900 V | 9.2A (Tc) | 10V | 980mOhm @ 4.6A, 10V | 4.5V @ 100µA | 115 nC @ 10 V | ±30V | 3000 pF @ 25 V | - | 200W (Tc) | -55°C ~ 150°C (TJ) | Through Hole |
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