Грузовой вагон ( )| Таблицы данных | Фотографии | Производитель. Часть # | Акции | Цены | А | Packaging | Series | ProductStatus | FETType | Technology | DraintoSourceVoltage(Vdss) | Current-ContinuousDrain(Id)@25°C | DriveVoltage(MaxRdsOnMinRdsOn) | RdsOn(Max)@IdVgs | Vgs(th)(Max)@Id | GateCharge(Qg)(Max)@Vgs | Vgs(Max) | InputCapacitance(Ciss)(Max)@Vds | FETFeature | PowerDissipation(Max) | OperatingTemperature | MountingType |
|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|
Таблицы данных |
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FDP054N10MOSFET N-CH 100V 120A TO220-3 |
2579 | 5.62 |
ДобавитьРасследования |
Tube | PowerTrench® | Active | N-Channel | MOSFET (Metal Oxide) | 100 V | 120A (Tc) | 10V | 5.5mOhm @ 75A, 10V | 4.5V @ 250µA | 203 nC @ 10 V | ±20V | 13280 pF @ 25 V | - | 263W (Tc) | -55°C ~ 175°C (TJ) | Through Hole |
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Таблицы данных |
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TK16N60W,S1VFMOSFET N CH 600V 15.8A TO247 |
2649 | 3.99 |
ДобавитьРасследования |
Tube | DTMOSIV | Active | N-Channel | MOSFET (Metal Oxide) | 600 V | 15.8A (Ta) | 10V | 190mOhm @ 7.9A, 10V | 3.7V @ 790µA | 38 nC @ 10 V | ±30V | 1350 pF @ 300 V | Super Junction | 130W (Tc) | 150°C (TJ) | Through Hole |
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Таблицы данных |
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SUP85N15-21-E3MOSFET N-CH 150V 85A TO220AB |
3511 | 5.66 |
ДобавитьРасследования |
Tube | TrenchFET® | Active | N-Channel | MOSFET (Metal Oxide) | 150 V | 85A (Tc) | 10V | 21mOhm @ 30A, 10V | 4V @ 250µA | 110 nC @ 10 V | ±20V | 4750 pF @ 25 V | - | 2.4W (Ta), 300W (Tc) | -55°C ~ 175°C (TJ) | Through Hole |
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Таблицы данных |
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IPP015N04NGXKSA1MOSFET N-CH 40V 120A TO220-3 |
3607 | 5.68 |
ДобавитьРасследования |
Tube | OptiMOS™ | Active | N-Channel | MOSFET (Metal Oxide) | 40 V | 120A (Tc) | 10V | 1.5mOhm @ 100A, 10V | 4V @ 200µA | 250 nC @ 10 V | ±20V | 20000 pF @ 20 V | - | 250W (Tc) | -55°C ~ 175°C (TJ) | Through Hole |
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Таблицы данных |
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SIHF068N60EF-GE3MOSFET N-CH 600V 16A TO220 |
3761 | 5.72 |
ДобавитьРасследования |
Tube | EF | Active | N-Channel | MOSFET (Metal Oxide) | 600 V | 16A (Tc) | 10V | 68mOhm @ 16A, 10V | 5V @ 250µA | 77 nC @ 10 V | ±30V | 2628 pF @ 100 V | - | 39W (Tc) | -55°C ~ 150°C (TJ) | Through Hole |
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Таблицы данных |
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SIHP068N60EF-GE3MOSFET N-CH 600V 41A TO220AB |
3504 | 5.75 |
ДобавитьРасследования |
Tube | EF | Active | N-Channel | MOSFET (Metal Oxide) | 600 V | 41A (Tc) | 10V | 68mOhm @ 16A, 10V | 5V @ 250µA | 77 nC @ 10 V | ±30V | 2628 pF @ 100 V | - | 250W (Tc) | -55°C ~ 150°C (TJ) | Through Hole |
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Таблицы данных |
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AUIRF7749L2TRMOSFET N-CH 60V 36A DIRECTFET |
2697 | 9.41 |
ДобавитьРасследования |
Tape & Reel (TR),Cut Tape (CT),Digi-Reel® | Automotive, AEC-Q101, OptiMOS™ | Active | N-Channel | MOSFET (Metal Oxide) | 60 V | 36A (Ta), 345A (Tc) | 10V | 1.5mOhm @ 120A, 10V | 4V @ 250µA | 275 nC @ 10 V | 60V | 10655 pF @ 25 V | - | 3.8W (Ta), 341W (Tc) | -55°C ~ 175°C (TJ) | Surface Mount |
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Таблицы данных |
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IPA60R099P7XKSA1MOSFET N-CH 600V 31A TO220 |
2974 | 1.00 |
ДобавитьРасследования |
Bulk,Tube | CoolMOS™ P7 | Active | N-Channel | MOSFET (Metal Oxide) | 600 V | 31A (Tc) | 10V | 99mOhm @ 10.5A, 10V | 4V @ 530µA | 45 nC @ 10 V | ±20V | 1952 pF @ 400 V | - | 29W (Tc) | -55°C ~ 150°C (TJ) | Through Hole |
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Таблицы данных |
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IPP60R125CFD7XKSA1MOSFET N-CH 600V 18A TO220-3 |
2780 | 5.77 |
ДобавитьРасследования |
Tube | OptiMOS™ | Active | N-Channel | MOSFET (Metal Oxide) | 600 V | 18A (Tc) | 10V | 125mOhm @ 7.8A, 10V | 4.5V @ 390µA | 36 nC @ 10 V | ±20V | 1503 pF @ 400 V | - | 92W (Tc) | -55°C ~ 150°C (TJ) | Through Hole |
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Таблицы данных |
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IRFB4137PBFMOSFET N-CH 300V 38A TO220 |
2979 | 5.78 |
ДобавитьРасследования |
Tube | HEXFET® | Active | N-Channel | MOSFET (Metal Oxide) | 300 V | 38A (Tc) | 10V | 69mOhm @ 24A, 10V | 5V @ 250µA | 125 nC @ 10 V | ±20V | 5168 pF @ 50 V | - | 341W (Tc) | -55°C ~ 175°C (TJ) | Through Hole |
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Таблицы данных |
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TK14N65W5,S1FMOSFET N-CH 650V 13.7A TO247 |
2554 | 4.10 |
ДобавитьРасследования |
Tube | DTMOSIV | Active | N-Channel | MOSFET (Metal Oxide) | 650 V | 13.7A (Ta) | 10V | 300mOhm @ 6.9A, 10V | 4.5V @ 690µA | 40 nC @ 10 V | ±30V | 1300 pF @ 300 V | - | 130W (Tc) | 150°C (TJ) | Through Hole |
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Таблицы данных |
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IPT60R080G7XTMA1MOSFET N-CH 650V 29A 8HSOF |
435 | 9.47 |
ДобавитьРасследования |
Tape & Reel (TR),Cut Tape (CT),Digi-Reel®,Bulk | CoolMOS™ G7 | Active | N-Channel | MOSFET (Metal Oxide) | 650 V | 29A (Tc) | 10V | 80mOhm @ 9.7A, 10V | 4V @ 490µA | 42 nC @ 10 V | ±20V | 1640 pF @ 400 V | - | 167W (Tc) | -40°C ~ 150°C (TJ) | Surface Mount |
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Таблицы данных |
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SPA17N80C3XKSA1MOSFET N-CH 800V 17A TO220-3 |
3833 | 5.94 |
ДобавитьРасследования |
Tube | CoolMOS™ | Active | N-Channel | MOSFET (Metal Oxide) | 800 V | 17A (Tc) | 10V | 290mOhm @ 11A, 10V | 3.9V @ 1mA | 177 nC @ 10 V | ±20V | 2320 pF @ 25 V | - | 42W (Tc) | -55°C ~ 150°C (TJ) | Through Hole |
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Таблицы данных |
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SPP17N80C3XKSA1MOSFET N-CH 800V 17A TO220-3 |
3505 | 5.94 |
ДобавитьРасследования |
Tube | CoolMOS™ | Active | N-Channel | MOSFET (Metal Oxide) | 800 V | 17A (Tc) | 10V | 290mOhm @ 11A, 10V | 3.9V @ 1mA | 177 nC @ 10 V | ±20V | 2320 pF @ 25 V | - | 208W (Tc) | -55°C ~ 150°C (TJ) | Through Hole |
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Таблицы данных |
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IXFH16N50PMOSFET N-CH 500V 16A TO247AD |
2024 | 5.96 |
ДобавитьРасследования |
Tube | HiPerFET™, Polar | Active | N-Channel | MOSFET (Metal Oxide) | 500 V | 16A (Tc) | 10V | 400mOhm @ 8A, 10V | 5.5V @ 2.5mA | 43 nC @ 10 V | ±30V | 2250 pF @ 25 V | - | 300W (Tc) | -55°C ~ 150°C (TJ) | Through Hole |
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Таблицы данных |
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SIHP24N65E-E3MOSFET N-CH 650V 24A TO220AB |
3606 | 5.98 |
ДобавитьРасследования |
Tube | - | Active | N-Channel | MOSFET (Metal Oxide) | 650 V | 24A (Tc) | 10V | 145mOhm @ 12A, 10V | 4V @ 250µA | 122 nC @ 10 V | ±30V | 2740 pF @ 100 V | - | 250W (Tc) | -55°C ~ 150°C (TJ) | Through Hole |
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Таблицы данных |
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IPW65R150CFDFKSA1MOSFET N-CH 650V 22.4A TO247-3 |
3956 | 5.98 |
ДобавитьРасследования |
Tube | CoolMOS™ | Not For New Designs | N-Channel | MOSFET (Metal Oxide) | 650 V | 22.4A (Tc) | 10V | 150mOhm @ 9.3A, 10V | 4.5V @ 900µA | 86 nC @ 10 V | ±20V | 2340 pF @ 100 V | - | 195.3W (Tc) | -55°C ~ 150°C (TJ) | Through Hole |
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Таблицы данных |
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STP315N10F7MOSFET N-CH 100V 180A TO220 |
2964 | 6.01 |
ДобавитьРасследования |
Tube | Automotive, AEC-Q101, DeepGATE™, STripFET™ VII | Active | N-Channel | MOSFET (Metal Oxide) | 100 V | 180A (Tc) | 10V | 2.7mOhm @ 60A, 10V | 4.5V @ 250µA | 180 nC @ 10 V | ±20V | 12800 pF @ 25 V | - | 315W (Tc) | -55°C ~ 175°C (TJ) | Through Hole |
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Таблицы данных |
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STP310N10F7MOSFET N CH 100V 180A TO-220 |
2951 | 6.10 |
ДобавитьРасследования |
Tube | DeepGATE™, STripFET™ VII | Active | N-Channel | MOSFET (Metal Oxide) | 100 V | 180A (Tc) | 10V | 2.7mOhm @ 60A, 10V | 3.8V @ 250µA | 180 nC @ 10 V | ±20V | 12800 pF @ 25 V | - | 315W (Tc) | -55°C ~ 175°C (TJ) | Through Hole |
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Таблицы данных |
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IPB033N10N5LFATMA1MOSFET N-CH 100V 120A TO263-3 |
3861 | 1.00 |
ДобавитьРасследования |
Tape & Reel (TR),Cut Tape (CT),Digi-Reel®,Bulk | OptiMOS™-5 | Active | N-Channel | MOSFET (Metal Oxide) | 100 V | 120A (Tc) | 10V | 3.3mOhm @ 100A, 10V | 4.1V @ 150µA | 102 nC @ 10 V | ±20V | 460 pF @ 50 V | - | 179W (Tc) | -55°C ~ 150°C (TJ) | Surface Mount |
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