Грузовой вагон ( )| Таблицы данных | Фотографии | Производитель. Часть # | Акции | Цены | А | Packaging | Series | ProductStatus | FETType | Technology | DraintoSourceVoltage(Vdss) | Current-ContinuousDrain(Id)@25°C | DriveVoltage(MaxRdsOnMinRdsOn) | RdsOn(Max)@IdVgs | Vgs(th)(Max)@Id | GateCharge(Qg)(Max)@Vgs | Vgs(Max) | InputCapacitance(Ciss)(Max)@Vds | FETFeature | PowerDissipation(Max) | OperatingTemperature | MountingType |
|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|
Таблицы данных |
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STP50NF25MOSFET N-CH 250V 45A TO220AB |
2395 | 3.02 |
ДобавитьРасследования |
Tube | STripFET™ | Active | N-Channel | MOSFET (Metal Oxide) | 250 V | 45A (Tc) | 10V | 69mOhm @ 22A, 10V | 4V @ 250µA | 68.2 nC @ 10 V | ±20V | 2670 pF @ 25 V | - | 160W (Tc) | -55°C ~ 150°C (TJ) | Through Hole |
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Таблицы данных |
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STP7NK80ZFPMOSFET N-CH 800V 5.2A TO220FP |
3117 | 3.02 |
ДобавитьРасследования |
Tube | SuperMESH™ | Active | N-Channel | MOSFET (Metal Oxide) | 800 V | 5.2A (Tc) | 10V | 1.8Ohm @ 2.6A, 10V | 4.5V @ 100µA | 56 nC @ 10 V | ±30V | 1138 pF @ 25 V | - | 30W (Tc) | -55°C ~ 150°C (TJ) | Through Hole |
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Таблицы данных |
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AOB29S50LMOSFET N-CH 500V 29A TO263 |
2400 | 4.83 |
ДобавитьРасследования |
Tape & Reel (TR),Cut Tape (CT),Digi-Reel® | aMOS™ | Active | N-Channel | MOSFET (Metal Oxide) | 500 V | 29A (Tc) | 10V | 150mOhm @ 14.5A, 10V | 3.9V @ 250µA | 26.6 nC @ 10 V | ±30V | 1312 pF @ 100 V | - | 357W (Tc) | -55°C ~ 150°C (TJ) | Surface Mount |
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Таблицы данных |
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AUIRF540ZMOSFET N-CH 100V 36A TO220AB |
2651 | 1.00 |
ДобавитьРасследования |
Bulk,Tube | HEXFET® | Active | N-Channel | MOSFET (Metal Oxide) | 100 V | 36A (Tc) | 10V | 26.5mOhm @ 22A, 10V | 4V @ 250µA | 63 nC @ 10 V | ±20V | 1770 pF @ 25 V | - | 92W (Tc) | -55°C ~ 175°C (TJ) | Through Hole |
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Таблицы данных |
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SUP10250E-GE3MOSFET N-CH 250V 63A TO220AB |
2055 | 3.03 |
ДобавитьРасследования |
Tube | ThunderFET® | Active | N-Channel | MOSFET (Metal Oxide) | 250 V | 63A (Tc) | 7.5V, 10V | - | 4V @ 250µA | 88 nC @ 10 V | ±20V | - | - | 375W (Tc) | -55°C ~ 175°C (TJ) | Through Hole |
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Таблицы данных |
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STP80NF55-08AGMOSFET N-CHANNEL 55V 80A TO220 |
2323 | 3.03 |
ДобавитьРасследования |
Tube | Automotive, AEC-Q101, STripFET™ | Last Time Buy | N-Channel | MOSFET (Metal Oxide) | 55 V | 80A (Tc) | 10V | 8mOhm @ 40A, 10V | 4V @ 250µA | 112 nC @ 10 V | ±20V | 3740 pF @ 15 V | - | 300W (Tc) | -55°C ~ 175°C (TJ) | Through Hole |
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Таблицы данных |
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FDP39N20MOSFET N-CH 200V 39A TO220-3 |
3448 | 3.05 |
ДобавитьРасследования |
Tube | UniFET™ | Last Time Buy | N-Channel | MOSFET (Metal Oxide) | 200 V | 39A (Tc) | 10V | 66mOhm @ 19.5A, 10V | 5V @ 250µA | 49 nC @ 10 V | ±30V | 2130 pF @ 25 V | - | 251W (Tc) | -55°C ~ 150°C (TJ) | Through Hole |
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Таблицы данных |
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STB33N60M2MOSFET N-CH 600V 26A D2PAK |
2270 | 5.09 |
ДобавитьРасследования |
Tape & Reel (TR),Cut Tape (CT),Digi-Reel® | MDmesh™ II Plus | Active | N-Channel | MOSFET (Metal Oxide) | 600 V | 26A (Tc) | 10V | 125mOhm @ 13A, 10V | 4V @ 250µA | 45.5 nC @ 10 V | ±25V | 1781 pF @ 100 V | - | 190W (Tc) | -55°C ~ 150°C (TJ) | Surface Mount |
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Таблицы данных |
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STP150N10F7MOSFET N-CH 100V 110A TO220 |
3007 | 3.06 |
ДобавитьРасследования |
Tube | DeepGATE™, STripFET™ VII | Active | N-Channel | MOSFET (Metal Oxide) | 100 V | 110A (Tc) | 10V | 4.2mOhm @ 55A, 10V | 4.5V @ 250µA | 117 nC @ 10 V | ±20V | 8115 pF @ 50 V | - | 250W (Tc) | -55°C ~ 175°C (TJ) | Through Hole |
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Таблицы данных |
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SIHJ10N60E-T1-GE3MOSFET N-CH 600V 10A PPAK SO-8 |
2224 | 3.06 |
ДобавитьРасследования |
Tube | E | Active | N-Channel | MOSFET (Metal Oxide) | 600 V | 10A (Tc) | 10V | 360mOhm @ 5A, 10V | 4.5V @ 250µA | 50 nC @ 10 V | ±30V | 784 pF @ 100 V | - | 89W (Tc) | -55°C ~ 150°C (TJ) | Surface Mount |
| |
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STF24N60M6MOSFET N-CH 600V TO220FP |
2098 | 3.06 |
ДобавитьРасследования |
Tube | MDmesh™ M6 | Active | N-Channel | MOSFET (Metal Oxide) | 600 V | 17A (Tj) | - | - | - | - | - | - | - | - | - | Through Hole |
|
Таблицы данных |
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SIHB12N65E-GE3MOSFET N-CH 650V 12A D2PAK |
3819 | 3.07 |
ДобавитьРасследования |
Tube | - | Active | N-Channel | MOSFET (Metal Oxide) | 650 V | 12A (Tc) | 10V | 380mOhm @ 6A, 10V | 4V @ 250µA | 70 nC @ 10 V | ±30V | 1224 pF @ 100 V | - | 156W (Tc) | -55°C ~ 150°C (TJ) | Surface Mount |
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Таблицы данных |
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STB23NM50NMOSFET N-CH 500V 17A D2PAK |
2800 | 5.11 |
ДобавитьРасследования |
Tape & Reel (TR),Cut Tape (CT),Digi-Reel® | MDmesh™ II | Active | N-Channel | MOSFET (Metal Oxide) | 500 V | 17A (Tc) | 10V | 190mOhm @ 8.5A, 10V | 4V @ 250µA | 45 nC @ 10 V | ±25V | 1330 pF @ 50 V | - | 125W (Tc) | 150°C (TJ) | Surface Mount |
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Таблицы данных |
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SIHP20N50E-GE3MOSFET N-CH 500V 19A TO220AB |
2545 | 3.08 |
ДобавитьРасследования |
Tube | - | Active | N-Channel | MOSFET (Metal Oxide) | 500 V | 19A (Tc) | 10V | 184mOhm @ 10A, 10V | 4V @ 250µA | 92 nC @ 10 V | ±30V | 1640 pF @ 100 V | - | 179W (Tc) | -55°C ~ 150°C (TJ) | Through Hole |
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Таблицы данных |
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TK3R2A10PL,S4XX35 PB-F POWER MOSFET TRANSISTOR |
2325 | 3.08 |
ДобавитьРасследования |
Tube | - | Active | N-Channel | MOSFET (Metal Oxide) | 100 V | 100A (Tc) | 4.5V, 10V | 3.2mOhm @ 50A, 10V | 2.5V @ 1mA | 161 nC @ 10 V | ±20V | 9500 pF @ 50 V | - | 54W (Tc) | 175°C | Through Hole |
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Таблицы данных |
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IRF840LCLPBFMOSFET N-CH 500V 8A I2PAK |
3988 | 3.09 |
ДобавитьРасследования |
Tube | - | Active | N-Channel | MOSFET (Metal Oxide) | 500 V | 8A (Tc) | 10V | 850mOhm @ 4.8A, 10V | 4V @ 250µA | 39 nC @ 10 V | ±30V | 1100 pF @ 25 V | - | 3.1W (Ta), 125W (Tc) | -55°C ~ 150°C (TJ) | Through Hole |
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Таблицы данных |
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FDI150N10MOSFET N-CH 100V 57A I2PAK |
2966 | 3.09 |
ДобавитьРасследования |
Tube | PowerTrench® | Active | N-Channel | MOSFET (Metal Oxide) | 100 V | 57A (Tc) | 10V | 16mOhm @ 49A, 10V | 4.5V @ 250µA | 69 nC @ 10 V | ±20V | 4760 pF @ 25 V | - | 110W (Tc) | -55°C ~ 150°C (TJ) | Through Hole |
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Таблицы данных |
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FDP8441MOSFET N-CH 40V 23A/80A TO220-3 |
2314 | 3.10 |
ДобавитьРасследования |
Tube,Tube | PowerTrench® | Last Time Buy | N-Channel | MOSFET (Metal Oxide) | 40 V | 23A (Ta), 80A (Tc) | 10V | 2.7mOhm @ 80A, 10V | 4V @ 250µA | 280 nC @ 10 V | ±20V | 15000 pF @ 25 V | - | 300W (Tc) | -55°C ~ 175°C (TJ) | Through Hole |
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Таблицы данных |
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FQP8N80CMOSFET N-CH 800V 8A TO220-3 |
2867 | 3.10 |
ДобавитьРасследования |
Bulk,Tube | QFET® | Active | N-Channel | MOSFET (Metal Oxide) | 800 V | 8A (Tc) | 10V | 1.55Ohm @ 4A, 10V | 5V @ 250µA | 45 nC @ 10 V | ±30V | 2050 pF @ 25 V | - | 178W (Tc) | -55°C ~ 150°C (TJ) | Through Hole |
|
Таблицы данных |
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NVMFS5C604NLAFT1GMOSFET N-CH 60V 287A 5DFN |
3438 | 1.00 |
ДобавитьРасследования |
Tape & Reel (TR),Cut Tape (CT),Digi-Reel®,Bulk | Automotive, AEC-Q101 | Active | N-Channel | MOSFET (Metal Oxide) | 60 V | 287A (Tc) | 4.5V, 10V | 1.2mOhm @ 50A, 10V | 2V @ 250µA | 52 nC @ 4.5 V | ±20V | 8900 pF @ 25 V | - | 200W (Tc) | -55°C ~ 175°C (TJ) | Surface Mount |
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