Грузовой вагон ( )| Таблицы данных | Фотографии | Производитель. Часть # | Акции | Цены | А | Packaging | Series | ProductStatus | FETType | Technology | DraintoSourceVoltage(Vdss) | Current-ContinuousDrain(Id)@25°C | DriveVoltage(MaxRdsOnMinRdsOn) | RdsOn(Max)@IdVgs | Vgs(th)(Max)@Id | GateCharge(Qg)(Max)@Vgs | Vgs(Max) | InputCapacitance(Ciss)(Max)@Vds | FETFeature | PowerDissipation(Max) | OperatingTemperature | MountingType |
|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|
Таблицы данных |
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SUP60020E-GE3MOSFET N-CH 80V 150A TO220AB |
2356 | 3.25 |
ДобавитьРасследования |
Tube | TrenchFET® | Active | N-Channel | MOSFET (Metal Oxide) | 80 V | 150A (Tc) | 7.5V, 10V | 2.4mOhm @ 30A, 10V | 4V @ 250µA | 227 nC @ 10 V | ±20V | 10680 pF @ 40 V | - | 375W (Tc) | -55°C ~ 175°C (TJ) | Through Hole |
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Таблицы данных |
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CSD19501KCSMOSFET N-CH 80V 100A TO220-3 |
1224 | 2.33 |
ДобавитьРасследования |
Bulk,Tube | NexFET™ | Active | N-Channel | MOSFET (Metal Oxide) | 80 V | 100A (Ta) | 6V, 10V | 6.6mOhm @ 60A, 10V | 3.2V @ 250µA | 50 nC @ 10 V | ±20V | 3980 pF @ 40 V | - | 217W (Tc) | -55°C ~ 175°C (TJ) | Through Hole |
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Таблицы данных |
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TK12A80W,S4XMOSFET N-CH 800V 11.5A TO220SIS |
3056 | 3.26 |
ДобавитьРасследования |
Tube | DTMOSIV | Active | N-Channel | MOSFET (Metal Oxide) | 800 V | 11.5A (Ta) | 10V | 450mOhm @ 5.8A, 10V | 4V @ 570µA | 23 nC @ 10 V | ±20V | 1400 pF @ 300 V | - | 45W (Tc) | 150°C | Through Hole |
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Таблицы данных |
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SIHB15N60E-GE3MOSFET N-CH 600V 15A D2PAK |
3112 | 3.26 |
ДобавитьРасследования |
Bulk | - | Active | N-Channel | MOSFET (Metal Oxide) | 600 V | 15A (Tc) | 10V | 280mOhm @ 8A, 10V | 4V @ 250µA | 78 nC @ 10 V | ±30V | 1350 pF @ 100 V | - | 180W (Tc) | -55°C ~ 150°C (TJ) | Surface Mount |
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Таблицы данных |
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SPP08N80C3XKSA1MOSFET N-CH 800V 8A TO220-3 |
2494 | 3.27 |
ДобавитьРасследования |
Tube | CoolMOS™ | Active | N-Channel | MOSFET (Metal Oxide) | 800 V | 8A (Tc) | 10V | 650mOhm @ 5.1A, 10V | 3.9V @ 470µA | 60 nC @ 10 V | ±20V | 1100 pF @ 100 V | - | 104W (Tc) | -55°C ~ 150°C (TJ) | Through Hole |
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SIHG17N80AE-GE3MOSFET N-CH 800V 15A TO247AC |
3133 | 3.27 |
ДобавитьРасследования |
Tube | E | Active | N-Channel | MOSFET (Metal Oxide) | 800 V | 15A (Tc) | 10V | 290mOhm @ 8.5A, 10V | 4V @ 250µA | 62 nC @ 10 V | ±30V | 1260 pF @ 100 V | - | 179W (Tc) | -55°C ~ 150°C (TJ) | Through Hole |
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Таблицы данных |
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SUP90N06-6M0P-E3MOSFET N-CH 60V 90A TO220AB |
2185 | 3.29 |
ДобавитьРасследования |
Tube | TrenchFET® | Active | N-Channel | MOSFET (Metal Oxide) | 60 V | 90A (Tc) | 10V | 6mOhm @ 20A, 10V | 4.5V @ 250µA | 120 nC @ 10 V | ±20V | 4700 pF @ 30 V | - | 3.75W (Ta), 272W (Tc) | -55°C ~ 175°C (TJ) | Through Hole |
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Таблицы данных |
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IPA60R280P6XKSA1MOSFET N-CH 600V 13.8A TO220-FP |
3524 | 1.00 |
ДобавитьРасследования |
Bulk,Tube | CoolMOS™ P6 | Active | N-Channel | MOSFET (Metal Oxide) | 600 V | 13.8A (Tc) | 10V | 280mOhm @ 5.2A, 10V | 4.5V @ 430µA | 25.5 nC @ 10 V | ±20V | 1190 pF @ 100 V | - | 32W (Tc) | -55°C ~ 150°C (TJ) | Through Hole |
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Таблицы данных |
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STB21N65M5MOSFET N-CH 650V 17A D2PAK |
2493 | 5.51 |
ДобавитьРасследования |
Tape & Reel (TR),Cut Tape (CT),Digi-Reel® | MDmesh™ V | Active | N-Channel | MOSFET (Metal Oxide) | 650 V | 17A (Tc) | 10V | 190mOhm @ 8.5A, 10V | 5V @ 250µA | 50 nC @ 10 V | ±25V | 1950 pF @ 100 V | - | 125W (Tc) | 150°C (TJ) | Surface Mount |
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Таблицы данных |
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STB23N80K5MOSFET N-CH 800V 16A D2PAK |
3064 | 5.51 |
ДобавитьРасследования |
Tape & Reel (TR),Cut Tape (CT),Digi-Reel® | MDmesh™ K5 | Active | N-Channel | MOSFET (Metal Oxide) | 800 V | 16A (Tc) | 10V | 280mOhm @ 8A, 10V | 5V @ 100µA | 33 nC @ 10 V | ±30V | 1000 pF @ 100 V | - | 190W (Tc) | -55°C ~ 150°C (TJ) | Surface Mount |
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Таблицы данных |
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NTB095N65S3HFMOSFET N-CH 650V 36A D2PAK-3 |
2750 | 5.35 |
ДобавитьРасследования |
Tape & Reel (TR),Cut Tape (CT),Digi-Reel® | FRFET®, SuperFET® III | Active | N-Channel | MOSFET (Metal Oxide) | 650 V | 36A (Tc) | 10V | 95mOhm @ 18A, 10V | 5V @ 860µA | 66 nC @ 10 V | ±30V | 2930 pF @ 400 V | - | 272W (Tc) | -55°C ~ 150°C (TJ) | Surface Mount |
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Таблицы данных |
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SIHA25N50E-E3MOSFET N-CH 500V 26A TO220 |
2558 | 3.35 |
ДобавитьРасследования |
Tube | - | Active | N-Channel | MOSFET (Metal Oxide) | 500 V | 26A (Tc) | 10V | 145mOhm @ 12A, 10V | 4V @ 250µA | 86 nC @ 10 V | ±30V | 1980 pF @ 100 V | - | 35W (Tc) | -55°C ~ 150°C (TJ) | Through Hole |
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Таблицы данных |
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IAUT240N08S5N019ATMA1MOSFET N-CH 80V 240A 8HSOF |
2538 | 1.00 |
ДобавитьРасследования |
Tape & Reel (TR),Cut Tape (CT),Digi-Reel®,Bulk | OptiMOS™-5 | Active | N-Channel | MOSFET (Metal Oxide) | 80 V | 240A (Tc) | 6V, 10V | 1.9mOhm @ 100A, 10V | 3.8V @ 160µA | 130 nC @ 10 V | ±20V | 9264 pF @ 40 V | - | 230W (Tc) | -55°C ~ 175°C (TJ) | Surface Mount |
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Таблицы данных |
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CSD18536KTTMOSFET N-CH 60V 200A DDPAK |
3018 | 5.37 |
ДобавитьРасследования |
Tape & Reel (TR),Cut Tape (CT),Digi-Reel® | NexFET™ | Active | N-Channel | MOSFET (Metal Oxide) | 60 V | 200A (Ta) | 4.5V, 10V | 1.6mOhm @ 100A, 10V | 2.2V @ 250µA | 140 nC @ 10 V | ±20V | 11430 pF @ 30 V | - | 375W (Tc) | -55°C ~ 175°C (TJ) | Surface Mount |
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Таблицы данных |
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SIHB17N80E-T1-GE3MOSFET N-CH 800V 15A D2PAK |
3474 | 5.37 |
ДобавитьРасследования |
Tape & Reel (TR),Cut Tape (CT),Digi-Reel® | - | Active | N-Channel | MOSFET (Metal Oxide) | 800 V | 15A (Tc) | 10V | 290mOhm @ 8.5A, 10V | 4V @ 250µA | 122 nC @ 10 V | ±30V | 2408 pF @ 100 V | - | 208W (Tc) | -55°C ~ 150°C (TJ) | Surface Mount |
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Таблицы данных |
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IXTP80N10TMOSFET N-CH 100V 80A TO220AB |
2316 | 3.37 |
ДобавитьРасследования |
Tube | Trench | Active | N-Channel | MOSFET (Metal Oxide) | 100 V | 80A (Tc) | 10V | 14mOhm @ 25A, 10V | 5V @ 100µA | 60 nC @ 10 V | ±20V | 3040 pF @ 25 V | - | 230W (Tc) | -55°C ~ 175°C (TJ) | Through Hole |
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Таблицы данных |
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SPP07N60C3XKSA1MOSFET N-CH 650V 7.3A TO220-3 |
3160 | 1.00 |
ДобавитьРасследования |
Bulk,Tube | CoolMOS™ | Active | N-Channel | MOSFET (Metal Oxide) | 650 V | 7.3A (Tc) | 10V | 600mOhm @ 4.6A, 10V | 3.9V @ 350µA | 27 nC @ 10 V | ±20V | 790 pF @ 25 V | - | 83W (Tc) | -55°C ~ 150°C (TJ) | Through Hole |
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Таблицы данных |
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AOTF20S60LMOSFET N-CH 600V 20A TO220-3F |
2850 | 3.39 |
ДобавитьРасследования |
Tube | aMOS™ | Not For New Designs | N-Channel | MOSFET (Metal Oxide) | 600 V | 20A (Tc) | 10V | 199mOhm @ 10A, 10V | 4.1V @ 250µA | 19.8 nC @ 10 V | ±30V | 1038 pF @ 100 V | - | 37.8W (Tc) | -55°C ~ 150°C (TJ) | Through Hole |
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Таблицы данных |
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STP16N65M5MOSFET N-CH 650V 12A TO220-3 |
2771 | 3.40 |
ДобавитьРасследования |
Tube | MDmesh™ V | Active | N-Channel | MOSFET (Metal Oxide) | 650 V | 12A (Tc) | 10V | 299mOhm @ 6A, 10V | 5V @ 250µA | 45 nC @ 10 V | ±25V | 1250 pF @ 100 V | - | 90W (Tc) | -55°C ~ 150°C (TJ) | Through Hole |
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Таблицы данных |
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STP2NK100ZMOSFET N-CH 1000V 1.85A TO220AB |
3304 | 3.41 |
ДобавитьРасследования |
Tube | SuperMESH™ | Active | N-Channel | MOSFET (Metal Oxide) | 1000 V | 1.85A (Tc) | 10V | 8.5Ohm @ 900mA, 10V | 4.5V @ 50µA | 16 nC @ 10 V | ±30V | 499 pF @ 25 V | - | 70W (Tc) | -55°C ~ 150°C (TJ) | Through Hole |
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