Таблицы данных Фотографии Производитель. Часть # Акции Цены А Packaging Series ProductStatus FETType Technology DraintoSourceVoltage(Vdss) Current-ContinuousDrain(Id)@25°C DriveVoltage(MaxRdsOnMinRdsOn) RdsOn(Max)@IdVgs Vgs(th)(Max)@Id GateCharge(Qg)(Max)@Vgs Vgs(Max) InputCapacitance(Ciss)(Max)@Vds FETFeature PowerDissipation(Max) OperatingTemperature MountingType
IPB200N15N3GATMA1

Таблицы данных

IPB200N15N3GATMA1

IPB200N15N3GATMA1

MOSFET N-CH 150V 50A D2PAK

Infineon Technologies

3342 3.60
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Tape & Reel (TR),Cut Tape (CT),Digi-Reel® OptiMOS™ Active N-Channel MOSFET (Metal Oxide) 150 V 50A (Tc) 8V, 10V 20mOhm @ 50A, 10V 4V @ 90µA 31 nC @ 10 V ±20V 1820 pF @ 75 V - 150W (Tc) -55°C ~ 175°C (TJ) Surface Mount
IXTP60N10T

Таблицы данных

IXTP60N10T

IXTP60N10T

MOSFET N-CH 100V 60A TO220AB

IXYS

2337 2.75
- +

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Tube Trench Active N-Channel MOSFET (Metal Oxide) 100 V 60A (Tc) 10V 18mOhm @ 25A, 10V 4.5V @ 50µA 49 nC @ 10 V ±30V 2650 pF @ 25 V - 176W (Tc) -55°C ~ 175°C (TJ) Through Hole
IPP072N10N3GXKSA1

Таблицы данных

IPP072N10N3GXKSA1

IPP072N10N3GXKSA1

MOSFET N-CH 100V 80A TO220-3

Infineon Technologies

3658 2.75
- +

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Расследования

Tube OptiMOS™ Active N-Channel MOSFET (Metal Oxide) 100 V 80A (Tc) 6V, 10V 7.2mOhm @ 80A, 10V 3.5V @ 90µA 68 nC @ 10 V ±20V 4910 pF @ 50 V - 150W (Tc) -55°C ~ 175°C (TJ) Through Hole
PSMN9R5-100PS,127

Таблицы данных

PSMN9R5-100PS,127

PSMN9R5-100PS,127

MOSFET N-CH 100V 89A TO220AB

Nexperia USA Inc.

3279 2.76
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Bulk,Tube - Active N-Channel MOSFET (Metal Oxide) 100 V 89A (Tc) 10V 9.6mOhm @ 15A, 10V 4V @ 1mA 82 nC @ 10 V ±20V 4454 pF @ 50 V - 211W (Tc) -55°C ~ 175°C (TJ) Through Hole
CSD18502KCS

Таблицы данных

CSD18502KCS

CSD18502KCS

MOSFET N-CH 40V 100A TO220-3

Texas Instruments

348 2.76
- +

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Tube NexFET™ Active N-Channel MOSFET (Metal Oxide) 40 V 100A (Tc) 4.5V, 10V 2.9mOhm @ 100A, 10V 2.1V @ 250µA 62 nC @ 10 V ±20V 4680 pF @ 20 V - 259W (Tc) -55°C ~ 175°C (TJ) Through Hole
IPA083N10N5XKSA1

Таблицы данных

IPA083N10N5XKSA1

IPA083N10N5XKSA1

MOSFET N-CH 100V 44A TO220-FP

Infineon Technologies

3422 2.76
- +

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Tube OptiMOS™ Active N-Channel MOSFET (Metal Oxide) 100 V 44A (Tc) 6V, 10V 8.3mOhm @ 44A, 10V 3.8V @ 49µA 37 nC @ 10 V ±20V 2730 pF @ 50 V - 36W (Tc) -55°C ~ 175°C (TJ) Through Hole
R8008ANJFRGTL

Таблицы данных

R8008ANJFRGTL

R8008ANJFRGTL

MOSFET N-CH 800V 8A LPTS

Rohm Semiconductor

3273 5.28
- +

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Расследования

Tape & Reel (TR),Cut Tape (CT),Digi-Reel® Automotive, AEC-Q101 Active N-Channel MOSFET (Metal Oxide) 800 V 8A (Tc) 10V 1.03Ohm @ 4A, 10V 5V @ 1mA 38 nC @ 10 V ±30V 1100 pF @ 25 V - 195W (Tc) 150°C (TJ) Surface Mount
FCP11N60F

Таблицы данных

FCP11N60F

FCP11N60F

MOSFET N-CH 600V 11A TO220-3

onsemi

2097 2.79
- +

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Tube SuperFET™ Active N-Channel MOSFET (Metal Oxide) 600 V 11A (Tc) 10V 380mOhm @ 5.5A, 10V 5V @ 250µA 52 nC @ 10 V ±30V 1490 pF @ 25 V - 125W (Tc) -55°C ~ 150°C (TJ) Through Hole
STF6N80K5

Таблицы данных

STF6N80K5

STF6N80K5

MOSFET N-CH 800V 4.5A TO220FP

STMicroelectronics

2667 2.79
- +

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Tube SuperMESH5™ Active N-Channel MOSFET (Metal Oxide) 800 V 4.5A (Tc) 10V 1.6Ohm @ 2A, 10V 5V @ 100µA 13 nC @ 10 V 30V 270 pF @ 100 V - 25W (Tc) -55°C ~ 150°C (TJ) Through Hole
SQM120N06-3M5L_GE3

Таблицы данных

SQM120N06-3M5L_GE3

SQM120N06-3M5L_GE3

MOSFET N-CH 60V 120A TO263

Vishay Siliconix

3043 4.47
- +

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Расследования

Tape & Reel (TR),Cut Tape (CT),Digi-Reel® Automotive, AEC-Q101, TrenchFET® Active N-Channel MOSFET (Metal Oxide) 60 V 120A (Tc) 4.5V, 10V 3.5mOhm @ 29A, 10V 2.5V @ 250µA 330 nC @ 10 V ±20V 14700 pF @ 25 V - 375W (Tc) -55°C ~ 175°C (TJ) Surface Mount
SQM200N04-1M1L_GE3

Таблицы данных

SQM200N04-1M1L_GE3

SQM200N04-1M1L_GE3

MOSFET N-CH 40V 200A TO263-7

Vishay Siliconix

3563 4.47
- +

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Расследования

Tape & Reel (TR),Cut Tape (CT),Digi-Reel® TrenchFET® Active N-Channel MOSFET (Metal Oxide) 40 V 200A (Tc) 4.5V, 10V 1.1mOhm @ 30A, 10V 2.5V @ 250µA 413 nC @ 10 V ±20V 20655 pF @ 25 V - 375W (Tc) -55°C ~ 175°C (TJ) Surface Mount
IXTA60N10T

Таблицы данных

IXTA60N10T

IXTA60N10T

MOSFET N-CH 100V 60A TO263

IXYS

2691 2.80
- +

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Tube Trench Active N-Channel MOSFET (Metal Oxide) 100 V 60A (Tc) 10V 18mOhm @ 25A, 10V 4.5V @ 50µA 49 nC @ 10 V ±30V 2650 pF @ 25 V - 176W (Tc) -55°C ~ 175°C (TJ) Surface Mount
TPS1101D

Таблицы данных

TPS1101D

TPS1101D

MOSFET P-CH 15V 2.3A 8SOIC

Texas Instruments

8060 2.81
- +

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Bulk,Tube - Active P-Channel MOSFET (Metal Oxide) 15 V 2.3A (Ta) 2.7V, 10V 90mOhm @ 2.5A, 10V 1.5V @ 250µA 11.25 nC @ 10 V +2V, -15V - - 791mW (Ta) -40°C ~ 150°C (TJ) Surface Mount
IRFS4010TRL7PP

Таблицы данных

IRFS4010TRL7PP

IRFS4010TRL7PP

MOSFET N-CH 100V 190A D2PAK

Infineon Technologies

3215 4.49
- +

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Расследования

Tape & Reel (TR),Cut Tape (CT),Digi-Reel® HEXFET® Active N-Channel MOSFET (Metal Oxide) 100 V 190A (Tc) 10V 4mOhm @ 110A, 10V 4V @ 250µA 230 nC @ 10 V ±20V 9830 pF @ 50 V - 380W (Tc) -55°C ~ 175°C (TJ) Surface Mount
IRFB4410ZGPBF

Таблицы данных

IRFB4410ZGPBF

IRFB4410ZGPBF

MOSFET N-CH 100V 97A TO220AB

Infineon Technologies

2944 2.82
- +

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Tube HEXFET® Not For New Designs N-Channel MOSFET (Metal Oxide) 100 V 97A (Tc) 10V 9mOhm @ 58A, 10V 4V @ 150µA 120 nC @ 10 V ±20V 4820 pF @ 50 V - 230W (Tc) -55°C ~ 175°C (TJ) Through Hole
TK7J90E,S1E

Таблицы данных

TK7J90E,S1E

TK7J90E,S1E

MOSFET N-CH 900V 7A TO3P

Toshiba Semiconductor and Storage

2598 2.83
- +

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Tube π-MOSVIII Active N-Channel MOSFET (Metal Oxide) 900 V 7A (Ta) 10V 2Ohm @ 3.5A, 10V 4V @ 700µA 32 nC @ 10 V ±30V 1350 pF @ 25 V - 200W (Tc) 150°C (TJ) Through Hole
FDP150N10

Таблицы данных

FDP150N10

FDP150N10

MOSFET N-CH 100V 57A TO220-3

onsemi

3075 2.83
- +

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Tube PowerTrench® Active N-Channel MOSFET (Metal Oxide) 100 V 57A (Tc) 10V 15mOhm @ 49A, 10V 4.5V @ 250µA 69 nC @ 10 V ±20V 4760 pF @ 25 V - 110W (Tc) -55°C ~ 150°C (TJ) Through Hole
IPA60R380C6XKSA1

Таблицы данных

IPA60R380C6XKSA1

IPA60R380C6XKSA1

MOSFET N-CH 600V 10.6A TO220-FP

Infineon Technologies

2543 1.00
- +

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Bulk,Tube CoolMOS™ Not For New Designs N-Channel MOSFET (Metal Oxide) 600 V 10.6A (Tc) 10V 380mOhm @ 3.8A, 10V 3.5V @ 320µA 32 nC @ 10 V ±20V 700 pF @ 100 V - 31W (Tc) -55°C ~ 150°C (TJ) Through Hole
RCJ700N20TL

Таблицы данных

RCJ700N20TL

RCJ700N20TL

MOSFET N-CH 200V 70A LPTS

Rohm Semiconductor

2839 5.33
- +

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Расследования

Tape & Reel (TR),Cut Tape (CT),Digi-Reel® - Active N-Channel MOSFET (Metal Oxide) 200 V 70A (Tc) 10V 42.7mOhm @ 35A, 10V 5V @ 1mA 125 nC @ 10 V ±30V 6900 pF @ 25 V - 1.56W (Ta), 40W (Tc) 150°C (TJ) Surface Mount
STH240N10F7-6

Таблицы данных

STH240N10F7-6

STH240N10F7-6

MOSFET N-CH 100V 180A H2PAK-6

STMicroelectronics

3492 4.75
- +

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Расследования

Tape & Reel (TR),Cut Tape (CT),Digi-Reel® STripFET™ F7 Active N-Channel MOSFET (Metal Oxide) 100 V 180A (Tc) 10V 2.5mOhm @ 60A, 10V 4.5V @ 250µA 160 nC @ 10 V ±20V 11550 pF @ 25 V - 300W (Tc) -55°C ~ 175°C (TJ) Surface Mount
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