Грузовой вагон ( )| Таблицы данных | Фотографии | Производитель. Часть # | Акции | Цены | А | Packaging | Series | ProductStatus | FETType | Technology | DraintoSourceVoltage(Vdss) | Current-ContinuousDrain(Id)@25°C | DriveVoltage(MaxRdsOnMinRdsOn) | RdsOn(Max)@IdVgs | Vgs(th)(Max)@Id | GateCharge(Qg)(Max)@Vgs | Vgs(Max) | InputCapacitance(Ciss)(Max)@Vds | FETFeature | PowerDissipation(Max) | OperatingTemperature | MountingType |
|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|
Таблицы данных |
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IRFIBE30GPBFMOSFET N-CH 800V 2.1A TO220-3 |
3620 | 2.96 |
ДобавитьРасследования |
Tube | - | Active | N-Channel | MOSFET (Metal Oxide) | 800 V | 2.1A (Tc) | 10V | 3Ohm @ 1.3A, 10V | 4V @ 250µA | 78 nC @ 10 V | ±20V | 1300 pF @ 25 V | - | 35W (Tc) | -55°C ~ 150°C (TJ) | Through Hole |
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Таблицы данных |
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STB18NM80MOSFET N-CH 800V 17A D2PAK |
2996 | 4.94 |
ДобавитьРасследования |
Tape & Reel (TR),Cut Tape (CT),Digi-Reel® | MDmesh™ | Active | N-Channel | MOSFET (Metal Oxide) | 800 V | 17A (Tc) | 10V | 295mOhm @ 8.5A, 10V | 5V @ 250µA | 70 nC @ 10 V | ±25V | 2070 pF @ 50 V | - | 190W (Tc) | 150°C (TJ) | Surface Mount |
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Таблицы данных |
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FDPF320N06LMOSFET N-CH 60V 21A TO220F |
2122 | 2.13 |
ДобавитьРасследования |
Tube | PowerTrench® | Active | N-Channel | MOSFET (Metal Oxide) | 60 V | 21A (Tc) | 5V, 10V | 25mOhm @ 21A, 10V | 2.5V @ 250µA | 30.2 nC @ 10 V | ±20V | 1470 pF @ 25 V | - | 26W (Tc) | -55°C ~ 175°C (TJ) | Through Hole |
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Таблицы данных |
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FDP61N20MOSFET N-CH 200V 61A TO220-3 |
3619 | 2.97 |
ДобавитьРасследования |
Bulk,Tube | UniFET™ | Active | N-Channel | MOSFET (Metal Oxide) | 200 V | 61A (Tc) | 10V | 41mOhm @ 30.5A, 10V | 5V @ 250µA | 75 nC @ 10 V | ±30V | 3380 pF @ 25 V | - | 417W (Tc) | -55°C ~ 150°C (TJ) | Through Hole |
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Таблицы данных |
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FDMS8320LDCMOSFET N-CH 40V 44A DLCOOL56 |
3730 | 4.26 |
ДобавитьРасследования |
Tape & Reel (TR),Cut Tape (CT),Digi-Reel®,Bulk | Dual Cool™, PowerTrench® | Active | N-Channel | MOSFET (Metal Oxide) | 40 V | 44A (Ta), 130A (Tc) | 4.5V, 10V | 1.1mOhm @ 44A, 10V | 3V @ 250µA | 170 nC @ 10 V | ±20V | 11635 pF @ 20 V | - | 3.2W (Ta), 125W (Tc) | -55°C ~ 150°C (TJ) | Surface Mount |
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Таблицы данных |
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TK16E60W5,S1VXMOSFET N-CH 600V 15.8A TO220 |
3792 | 2.97 |
ДобавитьРасследования |
Tube | DTMOSIV | Active | N-Channel | MOSFET (Metal Oxide) | 600 V | 15.8A (Ta) | 10V | 230mOhm @ 7.9A, 10V | 4.5V @ 790µA | 43 nC @ 10 V | ±30V | 1350 pF @ 300 V | - | 130W (Tc) | 150°C (TJ) | Through Hole |
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Таблицы данных |
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IPA80R450P7XKSA1MOSFET N-CH 800V 11A TO220-3F |
3771 | 2.97 |
ДобавитьРасследования |
Tube | CoolMOS™ | Active | N-Channel | MOSFET (Metal Oxide) | 800 V | 11A (Tc) | 10V | 450mOhm @ 4.5A, 10V | 3.5V @ 220µA | 24 nC @ 10 V | ±20V | 770 pF @ 500 V | Super Junction | 29W (Tc) | -55°C ~ 150°C (TJ) | Through Hole |
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Таблицы данных |
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IPA60R280P7XKSA1MOSFET N-CH 600V 12A TO220 |
1588 | 2.97 |
ДобавитьРасследования |
Bulk,Tube | CoolMOS™ P7 | Active | N-Channel | MOSFET (Metal Oxide) | 600 V | 12A (Tc) | 10V | 280mOhm @ 3.8A, 10V | 4V @ 190µA | 18 nC @ 10 V | ±20V | 761 pF @ 400 V | - | 24W (Tc) | -55°C ~ 150°C (TJ) | Through Hole |
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Таблицы данных |
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IPP60R280P7XKSA1MOSFET N-CH 600V 12A TO220-3 |
3479 | 1.00 |
ДобавитьРасследования |
Bulk,Tube | CoolMOS™ P7 | Active | N-Channel | MOSFET (Metal Oxide) | 600 V | 12A (Tc) | 10V | 280mOhm @ 3.8A, 10V | 4V @ 190µA | 18 nC @ 10 V | ±20V | 761 pF @ 400 V | - | 53W (Tc) | -55°C ~ 150°C (TJ) | Through Hole |
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Таблицы данных |
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R6020KNXMOSFET N-CH 600V 20A TO220FM |
2581 | 2.98 |
ДобавитьРасследования |
Bulk | - | Active | N-Channel | MOSFET (Metal Oxide) | 600 V | 20A (Tc) | 10V | 196mOhm @ 9.5A, 10V | 5V @ 1mA | 40 nC @ 10 V | ±20V | 1550 pF @ 25 V | - | 68W (Tc) | -55°C ~ 150°C (TJ) | Through Hole |
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Таблицы данных |
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IRFB38N20DPBFMOSFET N-CH 200V 43A TO220AB |
2082 | 2.98 |
ДобавитьРасследования |
Tube | HEXFET® | Active | N-Channel | MOSFET (Metal Oxide) | 200 V | 43A (Tc) | 10V | 54mOhm @ 26A, 10V | 5V @ 250µA | 91 nC @ 10 V | ±20V | 2900 pF @ 25 V | - | 3.8W (Ta), 300W (Tc) | -55°C ~ 175°C (TJ) | Through Hole |
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Таблицы данных |
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STP5N105K5MOSFET N-CH 1050V 3A TO220 |
3971 | 2.98 |
ДобавитьРасследования |
Tube | MDmesh™ K5 | Active | N-Channel | MOSFET (Metal Oxide) | 1050 V | 3A (Tc) | 10V | 3.5Ohm @ 1.5A, 10V | 5V @ 100µA | 12.5 nC @ 10 V | ±30V | 210 pF @ 100 V | - | 85W (Tc) | -55°C ~ 150°C (TJ) | Through Hole |
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Таблицы данных |
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PSMNR70-40SSHJMOSFET N-CH 40V 425A LFPAK88 |
3611 | 5.79 |
ДобавитьРасследования |
Tape & Reel (TR),Cut Tape (CT),Digi-Reel® | - | Active | N-Channel | MOSFET (Metal Oxide) | 40 V | 425A (Ta) | 10V | 0.7mOhm @ 25A, 10V | 3.6V @ 1mA | 202 nC @ 10 V | ±20V | 15719 pF @ 25 V | Schottky Diode (Body) | 375W (Ta) | -55°C ~ 175°C (TJ) | Surface Mount |
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Таблицы данных |
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STP9NK60ZMOSFET N-CH 600V 7A TO220AB |
2069 | 2.99 |
ДобавитьРасследования |
Tube | SuperMESH™ | Active | N-Channel | MOSFET (Metal Oxide) | 600 V | 7A (Tc) | 10V | 950mOhm @ 3.5A, 10V | 4.5V @ 100µA | 53 nC @ 10 V | ±30V | 1110 pF @ 25 V | - | 125W (Tc) | -55°C ~ 150°C (TJ) | Through Hole |
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Таблицы данных |
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IRFBE30LPBFMOSFET N-CH 800V 4.1A I2PAK |
2140 | 2.99 |
ДобавитьРасследования |
Tube | - | Active | N-Channel | MOSFET (Metal Oxide) | 800 V | 4.1A (Tc) | 10V | 3Ohm @ 2.5A, 10V | 4V @ 250µA | 78 nC @ 10 V | ±20V | 1300 pF @ 25 V | - | 125W (Tc) | -55°C ~ 150°C (TJ) | Through Hole |
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Таблицы данных |
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IRLIZ44GPBFMOSFET N-CH 60V 30A TO220-3 |
3869 | 2.99 |
ДобавитьРасследования |
Tube | - | Active | N-Channel | MOSFET (Metal Oxide) | 60 V | 30A (Tc) | 4V, 5V | 28mOhm @ 18A, 5V | 2V @ 250µA | 66 nC @ 5 V | ±10V | 3300 pF @ 25 V | - | 48W (Tc) | -55°C ~ 175°C (TJ) | Through Hole |
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Таблицы данных |
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HUF75345P3MOSFET N-CH 55V 75A TO220-3 |
2924 | 3.00 |
ДобавитьРасследования |
Tube | UltraFET™ | Active | N-Channel | MOSFET (Metal Oxide) | 55 V | 75A (Tc) | 10V | 7mOhm @ 75A, 10V | 4V @ 250µA | 275 nC @ 20 V | ±20V | 4000 pF @ 25 V | - | 325W (Tc) | -55°C ~ 175°C (TJ) | Through Hole |
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Таблицы данных |
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HUF75545P3MOSFET N-CH 80V 75A TO220-3 |
800 | 3.01 |
ДобавитьРасследования |
Tube | UltraFET™ | Active | N-Channel | MOSFET (Metal Oxide) | 80 V | 75A (Tc) | 10V | 10mOhm @ 75A, 10V | 4V @ 250µA | 235 nC @ 20 V | ±20V | 3750 pF @ 25 V | - | 270W (Tc) | -55°C ~ 175°C (TJ) | Through Hole |
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Таблицы данных |
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SIHD180N60E-GE3MOSFET N-CH 600V 19A TO252AA |
3011 | 3.01 |
ДобавитьРасследования |
Tube | E | Active | N-Channel | MOSFET (Metal Oxide) | 600 V | 19A (Tc) | 10V | 195mOhm @ 9.5A, 10V | 5V @ 250µA | 32 nC @ 10 V | ±30V | 1080 pF @ 100 V | - | 156W (Tc) | -55°C ~ 150°C (TJ) | Surface Mount |
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Таблицы данных |
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STB80NF10T4MOSFET N-CH 100V 80A D2PAK |
2286 | 5.02 |
ДобавитьРасследования |
Tape & Reel (TR),Cut Tape (CT),Digi-Reel® | STripFET™ II | Active | N-Channel | MOSFET (Metal Oxide) | 100 V | 80A (Tc) | 10V | 15mOhm @ 40A, 10V | 4V @ 250µA | 182 nC @ 10 V | ±20V | 5500 pF @ 25 V | - | 300W (Tc) | -55°C ~ 175°C (TJ) | Surface Mount |
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