Грузовой вагон ( )| Таблицы данных | Фотографии | Производитель. Часть # | Акции | Цены | А | Packaging | Series | ProductStatus | FETType | Technology | DraintoSourceVoltage(Vdss) | Current-ContinuousDrain(Id)@25°C | DriveVoltage(MaxRdsOnMinRdsOn) | RdsOn(Max)@IdVgs | Vgs(th)(Max)@Id | GateCharge(Qg)(Max)@Vgs | Vgs(Max) | InputCapacitance(Ciss)(Max)@Vds | FETFeature | PowerDissipation(Max) | OperatingTemperature | MountingType |
|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|
Таблицы данных |
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STB32NM50NMOSFET N CH 500V 22A D2PAK |
2971 | 4.45 |
ДобавитьРасследования |
Tape & Reel (TR),Cut Tape (CT),Digi-Reel® | MDmesh™ II | Active | N-Channel | MOSFET (Metal Oxide) | 500 V | 22A (Tc) | 10V | 130mOhm @ 11A, 10V | 4V @ 250µA | 62.5 nC @ 10 V | ±25V | 1973 pF @ 50 V | - | 190W (Tc) | 150°C (TJ) | Surface Mount |
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Таблицы данных |
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RJ1G12BGNTLLMOSFET N-CH 40V 120A LPTL |
2642 | 5.06 |
ДобавитьРасследования |
Tape & Reel (TR),Cut Tape (CT),Digi-Reel® | - | Active | N-Channel | MOSFET (Metal Oxide) | 40 V | 120A (Tc) | 4.5V, 10V | 1.86mOhm @ 50A, 10V | 2.5V @ 2mA | 165 nC @ 10 V | ±20V | 12500 pF @ 20 V | - | 178W (Tc) | 150°C (TJ) | Surface Mount |
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Таблицы данных |
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CSD19533KCSMOSFET N-CH 100V 100A TO220-3 |
2950 | 1.93 |
ДобавитьРасследования |
Tube | NexFET™ | Active | N-Channel | MOSFET (Metal Oxide) | 100 V | 100A (Ta) | 6V, 10V | 10.5mOhm @ 55A, 10V | 3.4V @ 250µA | 35 nC @ 10 V | ±20V | 2670 pF @ 50 V | - | 188W (Tc) | -55°C ~ 175°C (TJ) | Through Hole |
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Таблицы данных |
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STB33N65M2MOSFET N-CH 650V 24A D2PAK |
2294 | 4.46 |
ДобавитьРасследования |
Tape & Reel (TR),Cut Tape (CT),Digi-Reel® | MDmesh™ M2 | Active | N-Channel | MOSFET (Metal Oxide) | 650 V | 24A (Tc) | 10V | 140mOhm @ 12A, 10V | 4V @ 250µA | 41.5 nC @ 10 V | ±25V | 1790 pF @ 100 V | - | 190W (Tc) | 150°C (TJ) | Surface Mount |
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Таблицы данных |
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IRFBG30PBFMOSFET N-CH 1000V 3.1A TO220AB |
3546 | 2.68 |
ДобавитьРасследования |
Tube | - | Active | N-Channel | MOSFET (Metal Oxide) | 1000 V | 3.1A (Tc) | 10V | 5Ohm @ 1.9A, 10V | 4V @ 250µA | 80 nC @ 10 V | ±20V | 980 pF @ 25 V | - | 125W (Tc) | -55°C ~ 150°C (TJ) | Through Hole |
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Таблицы данных |
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SIHF12N65E-GE3MOSFET N-CH 650V 12A TO220 |
2846 | 2.68 |
ДобавитьРасследования |
Tube | - | Active | N-Channel | MOSFET (Metal Oxide) | 650 V | 12A (Tc) | 10V | 380mOhm @ 6A, 10V | 4V @ 250µA | 70 nC @ 10 V | ±30V | 1224 pF @ 100 V | - | 33W (Tc) | -55°C ~ 150°C (TJ) | Through Hole |
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Таблицы данных |
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IRF7748L1TRPBFMOSFET N-CH 60V 28A DIRECTFET |
3591 | 1.00 |
ДобавитьРасследования |
Tape & Reel (TR),Cut Tape (CT),Digi-Reel®,Bulk | - | Active | N-Channel | MOSFET (Metal Oxide) | 60 V | 28A (Ta), 148A (Tc) | 10V | 2.2mOhm @ 89A, 10V | 4V @ 250µA | 220 nC @ 10 V | ±20V | 8075 pF @ 50 V | - | 3.3W (Ta), 94W (Tc) | -55°C ~ 175°C (TJ) | Surface Mount |
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Таблицы данных |
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TK40A10N1,S4XMOSFET N-CH 100V 40A TO220SIS |
3420 | 1.94 |
ДобавитьРасследования |
Tube | U-MOSVIII-H | Active | N-Channel | MOSFET (Metal Oxide) | 100 V | 40A (Tc) | 10V | 8.2mOhm @ 20A, 10V | 4V @ 500µA | 49 nC @ 10 V | ±20V | 3000 pF @ 50 V | - | 35W (Tc) | 150°C (TJ) | Through Hole |
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Таблицы данных |
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IPA50R190CEXKSA2MOSFET N-CH 500V 18.5A TO220 |
2326 | 1.00 |
ДобавитьРасследования |
Bulk,Tube | CoolMOS™ CE | Active | N-Channel | MOSFET (Metal Oxide) | 500 V | 18.5A (Tc) | 13V | 190mOhm @ 6.2A, 13V | 3.5V @ 510µA | 47.2 nC @ 10 V | ±20V | 1137 pF @ 100 V | - | 32W (Tc) | -40°C ~ 150°C (TJ) | Through Hole |
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Таблицы данных |
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IXTP70N075T2MOSFET N-CH 75V 70A TO220AB |
3930 | 2.71 |
ДобавитьРасследования |
Tube | TrenchT2™ | Active | N-Channel | MOSFET (Metal Oxide) | 75 V | 70A (Tc) | 10V | 12mOhm @ 25A, 10V | 4V @ 250µA | 46 nC @ 10 V | ±20V | 2725 pF @ 25 V | - | 150W (Tc) | -55°C ~ 175°C (TJ) | Through Hole |
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Таблицы данных |
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IXTA08N50D2MOSFET N-CH 500V 800MA TO263 |
3371 | 2.71 |
ДобавитьРасследования |
Tube | Depletion | Active | N-Channel | MOSFET (Metal Oxide) | 500 V | 800mA (Tc) | - | 4.6Ohm @ 400mA, 0V | - | 12.7 nC @ 5 V | ±20V | 312 pF @ 25 V | Depletion Mode | 60W (Tc) | -55°C ~ 150°C (TJ) | Surface Mount |
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Таблицы данных |
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AUIRF6215STRLMOSFET P-CH 150V 13A D2PAK |
3876 | 4.34 |
ДобавитьРасследования |
Tape & Reel (TR),Cut Tape (CT),Digi-Reel® | HEXFET® | Active | P-Channel | MOSFET (Metal Oxide) | 150 V | 13A (Tc) | 10V | 290mOhm @ 6.6A, 10V | 4V @ 250µA | 66 nC @ 10 V | ±20V | 860 pF @ 25 V | - | 3.8W (Ta), 110W (Tc) | -55°C ~ 175°C (TJ) | Surface Mount |
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Таблицы данных |
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IRF9540NLPBFMOSFET P-CH 100V 23A TO262 |
3268 | 2.72 |
ДобавитьРасследования |
Tube | HEXFET® | Active | P-Channel | MOSFET (Metal Oxide) | 100 V | 23A (Tc) | 10V | 117mOhm @ 14A, 10V | 4V @ 250µA | 110 nC @ 10 V | ±20V | 1450 pF @ 25 V | - | 3.1W (Ta), 110W (Tc) | -55°C ~ 150°C (TJ) | Through Hole |
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Таблицы данных |
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IRLS3036TRLPBFMOSFET N-CH 60V 195A D2PAK |
2710 | 4.34 |
ДобавитьРасследования |
Tape & Reel (TR),Cut Tape (CT),Digi-Reel® | HEXFET® | Active | N-Channel | MOSFET (Metal Oxide) | 60 V | 195A (Tc) | 4.5V, 10V | 2.4mOhm @ 165A, 10V | 2.5V @ 250µA | 140 nC @ 4.5 V | ±16V | 11210 pF @ 50 V | - | 380W (Tc) | -55°C ~ 175°C (TJ) | Surface Mount |
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Таблицы данных |
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IPB180P04P4L02ATMA1MOSFET P-CH 40V 180A TO263-7 |
3747 | 4.95 |
ДобавитьРасследования |
Tape & Reel (TR),Cut Tape (CT),Digi-Reel® | OptiMOS™ | Not For New Designs | P-Channel | MOSFET (Metal Oxide) | 40 V | 180A (Tc) | 4.5V, 10V | 2.4mOhm @ 100A, 10V | 2.2V @ 410µA | 286 nC @ 10 V | ±16V | 18700 pF @ 25 V | - | 150W (Tc) | -55°C ~ 175°C (TJ) | Surface Mount |
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Таблицы данных |
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IPB180P04P4L02ATMA2MOSFET P-CH 40V 180A TO263-7 |
2604 | 4.95 |
ДобавитьРасследования |
Tape & Reel (TR),Cut Tape (CT),Digi-Reel® | OptiMOS®-P2 | Active | P-Channel | MOSFET (Metal Oxide) | 40 V | 180A (Tc) | 4.5V, 10V | 2.4mOhm @ 100A, 10V | 2.2V @ 410µA | 286 nC @ 10 V | +5V, -16V | 18700 pF @ 25 V | - | 150W (Tc) | -55°C ~ 175°C (TJ) | Surface Mount |
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Таблицы данных |
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NTMFS0D8N02P1ET1GMOSFET N-CH 25V 55A/365A 5DFN |
3781 | 3.72 |
ДобавитьРасследования |
Tape & Reel (TR),Cut Tape (CT),Digi-Reel® | - | Active | N-Channel | MOSFET (Metal Oxide) | 25 V | 55A (Ta), 365A (Tc) | 4.5V, 10V | 0.68mOhm @ 46A, 10V | 2V @ 2mA | 52 nC @ 4.5 V | +16V, -12V | 8600 pF @ 13 V | - | 3.2W (Ta), 139W (Tc) | -55°C ~ 150°C (TJ) | Surface Mount |
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SIHA15N80AE-GE3MOSFET N-CH 800V 6A TO220 |
3094 | 2.73 |
ДобавитьРасследования |
Tube | E | Active | N-Channel | MOSFET (Metal Oxide) | 800 V | 6A (Tc) | 10V | 350mOhm @ 7.5A, 10V | 4V @ 250µA | 53 nC @ 10 V | ±30V | 1093 pF @ 100 V | - | 33W (Tc) | -55°C ~ 150°C (TJ) | Through Hole |
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Таблицы данных |
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NVB150N65S3FMOSFET N-CH 650V 24A D2PAK-3 |
2197 | 4.37 |
ДобавитьРасследования |
Tape & Reel (TR),Cut Tape (CT),Digi-Reel® | Automotive, AEC-Q101, SuperFET® III, FRFET® | Active | N-Channel | MOSFET (Metal Oxide) | 650 V | 24A (Tc) | 10V | 150mOhm @ 12A, 10V | 5V @ 540µA | 43 nC @ 10 V | ±30V | 1999 pF @ 400 V | - | 192W | -55°C ~ 150°C (TJ) | Surface Mount |
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Таблицы данных |
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STP5NK80ZFPMOSFET N-CH 800V 4.3A TO220FP |
2125 | 2.74 |
ДобавитьРасследования |
Tube | PowerMESH™ | Active | N-Channel | MOSFET (Metal Oxide) | 800 V | 4.3A (Tc) | 10V | 2.4Ohm @ 2.15A, 10V | 4.5V @ 100µA | 45.5 nC @ 10 V | ±30V | 910 pF @ 25 V | - | 30W (Tc) | -55°C ~ 150°C (TJ) | Through Hole |
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