Таблицы данных | Фотографии | Производитель. Часть # | Акции | Цены | А | Packaging | Series | ProductStatus | FETType | Technology | DraintoSourceVoltage(Vdss) | Current-ContinuousDrain(Id)@25°C | DriveVoltage(MaxRdsOnMinRdsOn) | RdsOn(Max)@IdVgs | Vgs(th)(Max)@Id | GateCharge(Qg)(Max)@Vgs | Vgs(Max) | InputCapacitance(Ciss)(Max)@Vds | FETFeature | PowerDissipation(Max) | OperatingTemperature | MountingType |
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SIHB11N80AE-GE3MOSFET N-CH 800V 8A D2PAK |
2257 | 2.29 |
ДобавитьРасследования |
Tube | E | Active | N-Channel | MOSFET (Metal Oxide) | 800 V | 8A (Tc) | 10V | 450mOhm @ 5.5A, 10V | 4V @ 250µA | 42 nC @ 10 V | ±30V | 804 pF @ 100 V | - | 78W (Tc) | -55°C ~ 150°C (TJ) | Surface Mount |
![]() Таблицы данных |
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SIHP15N50E-GE3MOSFET N-CH 500V 14.5A TO220AB |
2566 | 2.30 |
ДобавитьРасследования |
Tube | - | Active | N-Channel | MOSFET (Metal Oxide) | 500 V | 14.5A (Tc) | 10V | 280mOhm @ 7.5A, 10V | 4V @ 250µA | 66 nC @ 10 V | ±30V | 1162 pF @ 100 V | - | 156W (Tc) | -55°C ~ 150°C (TJ) | Through Hole |
![]() Таблицы данных |
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TK3R2E06PL,S1XX35 PB-F POWER MOSFET TRANSISTOR |
2059 | 1.67 |
ДобавитьРасследования |
Tube | - | Active | N-Channel | MOSFET (Metal Oxide) | 60 V | 100A (Tc) | 4.5V, 10V | 3.2mOhm @ 50A, 10V | 2.5V @ 700µA | 71 nC @ 10 V | ±20V | 5000 pF @ 30 V | - | 168W (Tc) | 175°C | Through Hole |
![]() Таблицы данных |
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TK9A90E,S4XMOSFET N-CH 900V 9A TO220SIS |
2594 | 2.32 |
ДобавитьРасследования |
Tube | π-MOSVIII | Active | N-Channel | MOSFET (Metal Oxide) | 900 V | 9A (Ta) | 10V | 1.3Ohm @ 4.5A, 10V | 4V @ 900µA | 46 nC @ 10 V | ±30V | 2000 pF @ 25 V | - | 50W (Tc) | 150°C (TJ) | Through Hole |
![]() Таблицы данных |
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STB10NK60ZT4MOSFET N-CH 600V 10A D2PAK |
2795 | 3.87 |
ДобавитьРасследования |
Tape & Reel (TR),Cut Tape (CT),Digi-Reel® | SuperMESH™ | Not For New Designs | N-Channel | MOSFET (Metal Oxide) | 600 V | 10A (Tc) | 10V | 750mOhm @ 4.5A, 10V | 4.5V @ 250µA | 70 nC @ 10 V | ±30V | 1370 pF @ 25 V | - | 115W (Tc) | -55°C ~ 150°C (TJ) | Surface Mount |
![]() Таблицы данных |
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BSC014N06NSTATMA1MOSFET N-CH 60V 100A TDSON-8 FL |
2192 | 4.22 |
ДобавитьРасследования |
Tape & Reel (TR),Cut Tape (CT),Digi-Reel® | OptiMOS™ | Active | N-Channel | MOSFET (Metal Oxide) | 60 V | 100A (Tc) | 6V, 10V | 1.45mOhm @ 50A, 10V | 3.3V @ 120µA | 104 nC @ 10 V | ±20V | 8125 pF @ 30 V | - | 3W (Ta), 188W (Tc) | -55°C ~ 175°C (TJ) | Surface Mount |
![]() Таблицы данных |
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FDP2572MOSFET N-CH 150V 4A/29A TO220-3 |
2574 | 2.33 |
ДобавитьРасследования |
Bulk,Tube | PowerTrench® | Active | N-Channel | MOSFET (Metal Oxide) | 150 V | 4A (Ta), 29A (Tc) | 6V, 10V | 54mOhm @ 9A, 10V | 4V @ 250µA | 34 nC @ 10 V | ±20V | 1770 pF @ 25 V | - | 135W (Tc) | -55°C ~ 175°C (TJ) | Through Hole |
![]() Таблицы данных |
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FQA28N15MOSFET N-CH 150V 33A TO3PN |
2293 | 2.33 |
ДобавитьРасследования |
Tube | QFET® | Last Time Buy | N-Channel | MOSFET (Metal Oxide) | 150 V | 33A (Tc) | 10V | 90mOhm @ 16.5A, 10V | 4V @ 250µA | 52 nC @ 10 V | ±25V | 1600 pF @ 25 V | - | 227W (Tc) | -55°C ~ 175°C (TJ) | Through Hole |
![]() Таблицы данных |
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STL225N6F7AGMOSFET N-CH 60V 120A POWERFLAT |
3746 | 3.88 |
ДобавитьРасследования |
Tape & Reel (TR),Cut Tape (CT),Digi-Reel® | Automotive, AEC-Q101, STripFET™ F7 | Active | N-Channel | MOSFET (Metal Oxide) | 60 V | 120A (Tc) | 10V | 1.4mOhm @ 60A, 10V | 4V @ 250µA | 98 nC @ 10 V | ±20V | 6500 pF @ 25 V | - | 188W (Tc) | -55°C ~ 175°C (TJ) | Surface Mount, Wettable Flank |
![]() Таблицы данных |
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SIHB22N60ET1-GE3MOSFET N-CH 600V 21A TO263 |
3851 | 3.73 |
ДобавитьРасследования |
Tape & Reel (TR),Cut Tape (CT),Digi-Reel® | E | Active | N-Channel | MOSFET (Metal Oxide) | 600 V | 21A (Tc) | 10V | 180mOhm @ 11A, 10V | 4V @ 250µA | 86 nC @ 10 V | ±30V | 1920 pF @ 100 V | - | 227W (Tc) | -55°C ~ 150°C (TJ) | Surface Mount |
![]() Таблицы данных |
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FCPF400N60MOSFET N-CH 600V 10A TO220F |
2017 | 2.34 |
ДобавитьРасследования |
Tube | SuperFET® II | Active | N-Channel | MOSFET (Metal Oxide) | 600 V | 10A (Tc) | 10V | 400mOhm @ 5A, 10V | 3.5V @ 250µA | 38 nC @ 10 V | ±20V | 1580 pF @ 25 V | - | 31W (Tc) | -55°C ~ 150°C (TJ) | Through Hole |
![]() Таблицы данных |
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IRFBE30PBFMOSFET N-CH 800V 4.1A TO220AB |
2533 | 2.35 |
ДобавитьРасследования |
Tube | - | Active | N-Channel | MOSFET (Metal Oxide) | 800 V | 4.1A (Tc) | 10V | 3Ohm @ 2.5A, 10V | 4V @ 250µA | 78 nC @ 10 V | ±20V | 1300 pF @ 25 V | - | 125W (Tc) | -55°C ~ 150°C (TJ) | Through Hole |
![]() Таблицы данных |
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CSD19535KTTMOSFET N-CH 100V 200A DDPAK |
2613 | 3.76 |
ДобавитьРасследования |
Tape & Reel (TR),Cut Tape (CT),Digi-Reel® | NexFET™ | Active | N-Channel | MOSFET (Metal Oxide) | 100 V | 200A (Ta) | 6V, 10V | 3.4mOhm @ 100A, 10V | 3.4V @ 250µA | 98 nC @ 10 V | ±20V | 7930 pF @ 50 V | - | 300W (Tc) | -55°C ~ 175°C (TJ) | Surface Mount |
![]() Таблицы данных |
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IRFS7730TRLPBFMOSFET N-CH 75V 195A D2PAK |
3467 | 1.00 |
ДобавитьРасследования |
Tape & Reel (TR),Cut Tape (CT),Digi-Reel®,Bulk | HEXFET®, StrongIRFET™ | Active | N-Channel | MOSFET (Metal Oxide) | 75 V | 195A (Tc) | 6V, 10V | 2.6mOhm @ 100A, 10V | 3.7V @ 250µA | 407 nC @ 10 V | ±20V | 13660 pF @ 25 V | - | 375W (Tc) | -55°C ~ 175°C (TJ) | Surface Mount |
![]() Таблицы данных |
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SI7439DP-T1-GE3MOSFET P-CH 150V 3A PPAK SO-8 |
3497 | 4.17 |
ДобавитьРасследования |
Tape & Reel (TR),Cut Tape (CT),Digi-Reel® | TrenchFET® | Active | P-Channel | MOSFET (Metal Oxide) | 150 V | 3A (Ta) | 6V, 10V | 90mOhm @ 5.2A, 10V | 4V @ 250µA | 135 nC @ 10 V | ±20V | - | - | 1.9W (Ta) | -55°C ~ 150°C (TJ) | Surface Mount |
![]() Таблицы данных |
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IRFS9N60ATRLPBFMOSFET N-CH 600V 9.2A D2PAK |
3084 | 3.79 |
ДобавитьРасследования |
Tape & Reel (TR),Cut Tape (CT),Digi-Reel® | - | Active | N-Channel | MOSFET (Metal Oxide) | 600 V | 9.2A (Tc) | 10V | 750mOhm @ 5.5A, 10V | 4V @ 250µA | 49 nC @ 10 V | ±30V | 1400 pF @ 25 V | - | 170W (Tc) | -55°C ~ 150°C (TJ) | Surface Mount |
![]() Таблицы данных |
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HUF75545S3STMOSFET N-CH 80V 75A D2PAK |
2927 | 3.80 |
ДобавитьРасследования |
Tape & Reel (TR),Cut Tape (CT),Digi-Reel®,Bulk | UltraFET™ | Active | N-Channel | MOSFET (Metal Oxide) | 80 V | 75A (Tc) | 10V | 10mOhm @ 75A, 10V | 4V @ 250µA | 235 nC @ 20 V | ±20V | 3750 pF @ 25 V | - | 270W (Tc) | -55°C ~ 175°C (TJ) | Surface Mount |
![]() Таблицы данных |
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FCPF11N60MOSFET N-CH 600V 11A TO220F |
3385 | 2.39 |
ДобавитьРасследования |
Tube | SuperFET™ | Not For New Designs | N-Channel | MOSFET (Metal Oxide) | 600 V | 11A (Tc) | 10V | 380mOhm @ 5.5A, 10V | 5V @ 250µA | 52 nC @ 10 V | ±30V | 1490 pF @ 25 V | - | 36W (Tc) | -55°C ~ 150°C (TJ) | Through Hole |
![]() Таблицы данных |
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RSJ550N10TLMOSFET N-CH 100V 55A LPTS |
2144 | 4.53 |
ДобавитьРасследования |
Tape & Reel (TR),Cut Tape (CT),Digi-Reel® | - | Active | N-Channel | MOSFET (Metal Oxide) | 100 V | 55A (Ta) | 4V, 10V | 16.8mOhm @ 27.5A, 10V | 2.5V @ 1mA | 143 nC @ 10 V | ±20V | 6150 pF @ 25 V | - | 100W (Tc) | 150°C (TJ) | Surface Mount |
![]() Таблицы данных |
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IRFU9220PBFMOSFET P-CH 200V 3.6A TO251AA |
3801 | 2.40 |
ДобавитьРасследования |
Tube | - | Active | P-Channel | MOSFET (Metal Oxide) | 200 V | 3.6A (Tc) | 10V | 1.5Ohm @ 2.2A, 10V | 4V @ 250µA | 20 nC @ 10 V | ±20V | 340 pF @ 25 V | - | 2.5W (Ta), 42W (Tc) | -55°C ~ 150°C (TJ) | Through Hole |