Таблицы данных Фотографии Производитель. Часть # Акции Цены А Packaging Series ProductStatus FETType Technology DraintoSourceVoltage(Vdss) Current-ContinuousDrain(Id)@25°C DriveVoltage(MaxRdsOnMinRdsOn) RdsOn(Max)@IdVgs Vgs(th)(Max)@Id GateCharge(Qg)(Max)@Vgs Vgs(Max) InputCapacitance(Ciss)(Max)@Vds FETFeature PowerDissipation(Max) OperatingTemperature MountingType
SIHB11N80AE-GE3 SIHB11N80AE-GE3

SIHB11N80AE-GE3

MOSFET N-CH 800V 8A D2PAK

Vishay Siliconix

2257 2.29
- +

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Tube E Active N-Channel MOSFET (Metal Oxide) 800 V 8A (Tc) 10V 450mOhm @ 5.5A, 10V 4V @ 250µA 42 nC @ 10 V ±30V 804 pF @ 100 V - 78W (Tc) -55°C ~ 150°C (TJ) Surface Mount
SIHP15N50E-GE3

Таблицы данных

SIHP15N50E-GE3

SIHP15N50E-GE3

MOSFET N-CH 500V 14.5A TO220AB

Vishay Siliconix

2566 2.30
- +

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Tube - Active N-Channel MOSFET (Metal Oxide) 500 V 14.5A (Tc) 10V 280mOhm @ 7.5A, 10V 4V @ 250µA 66 nC @ 10 V ±30V 1162 pF @ 100 V - 156W (Tc) -55°C ~ 150°C (TJ) Through Hole
TK3R2E06PL,S1X

Таблицы данных

TK3R2E06PL,S1X

TK3R2E06PL,S1X

X35 PB-F POWER MOSFET TRANSISTOR

Toshiba Semiconductor and Storage

2059 1.67
- +

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Tube - Active N-Channel MOSFET (Metal Oxide) 60 V 100A (Tc) 4.5V, 10V 3.2mOhm @ 50A, 10V 2.5V @ 700µA 71 nC @ 10 V ±20V 5000 pF @ 30 V - 168W (Tc) 175°C Through Hole
TK9A90E,S4X

Таблицы данных

TK9A90E,S4X

TK9A90E,S4X

MOSFET N-CH 900V 9A TO220SIS

Toshiba Semiconductor and Storage

2594 2.32
- +

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Tube π-MOSVIII Active N-Channel MOSFET (Metal Oxide) 900 V 9A (Ta) 10V 1.3Ohm @ 4.5A, 10V 4V @ 900µA 46 nC @ 10 V ±30V 2000 pF @ 25 V - 50W (Tc) 150°C (TJ) Through Hole
STB10NK60ZT4

Таблицы данных

STB10NK60ZT4

STB10NK60ZT4

MOSFET N-CH 600V 10A D2PAK

STMicroelectronics

2795 3.87
- +

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Tape & Reel (TR),Cut Tape (CT),Digi-Reel® SuperMESH™ Not For New Designs N-Channel MOSFET (Metal Oxide) 600 V 10A (Tc) 10V 750mOhm @ 4.5A, 10V 4.5V @ 250µA 70 nC @ 10 V ±30V 1370 pF @ 25 V - 115W (Tc) -55°C ~ 150°C (TJ) Surface Mount
BSC014N06NSTATMA1

Таблицы данных

BSC014N06NSTATMA1

BSC014N06NSTATMA1

MOSFET N-CH 60V 100A TDSON-8 FL

Infineon Technologies

2192 4.22
- +

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Расследования

Tape & Reel (TR),Cut Tape (CT),Digi-Reel® OptiMOS™ Active N-Channel MOSFET (Metal Oxide) 60 V 100A (Tc) 6V, 10V 1.45mOhm @ 50A, 10V 3.3V @ 120µA 104 nC @ 10 V ±20V 8125 pF @ 30 V - 3W (Ta), 188W (Tc) -55°C ~ 175°C (TJ) Surface Mount
FDP2572

Таблицы данных

FDP2572

FDP2572

MOSFET N-CH 150V 4A/29A TO220-3

onsemi

2574 2.33
- +

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Bulk,Tube PowerTrench® Active N-Channel MOSFET (Metal Oxide) 150 V 4A (Ta), 29A (Tc) 6V, 10V 54mOhm @ 9A, 10V 4V @ 250µA 34 nC @ 10 V ±20V 1770 pF @ 25 V - 135W (Tc) -55°C ~ 175°C (TJ) Through Hole
FQA28N15

Таблицы данных

FQA28N15

FQA28N15

MOSFET N-CH 150V 33A TO3PN

onsemi

2293 2.33
- +

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Tube QFET® Last Time Buy N-Channel MOSFET (Metal Oxide) 150 V 33A (Tc) 10V 90mOhm @ 16.5A, 10V 4V @ 250µA 52 nC @ 10 V ±25V 1600 pF @ 25 V - 227W (Tc) -55°C ~ 175°C (TJ) Through Hole
STL225N6F7AG

Таблицы данных

STL225N6F7AG

STL225N6F7AG

MOSFET N-CH 60V 120A POWERFLAT

STMicroelectronics

3746 3.88
- +

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Tape & Reel (TR),Cut Tape (CT),Digi-Reel® Automotive, AEC-Q101, STripFET™ F7 Active N-Channel MOSFET (Metal Oxide) 60 V 120A (Tc) 10V 1.4mOhm @ 60A, 10V 4V @ 250µA 98 nC @ 10 V ±20V 6500 pF @ 25 V - 188W (Tc) -55°C ~ 175°C (TJ) Surface Mount, Wettable Flank
SIHB22N60ET1-GE3

Таблицы данных

SIHB22N60ET1-GE3

SIHB22N60ET1-GE3

MOSFET N-CH 600V 21A TO263

Vishay Siliconix

3851 3.73
- +

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Расследования

Tape & Reel (TR),Cut Tape (CT),Digi-Reel® E Active N-Channel MOSFET (Metal Oxide) 600 V 21A (Tc) 10V 180mOhm @ 11A, 10V 4V @ 250µA 86 nC @ 10 V ±30V 1920 pF @ 100 V - 227W (Tc) -55°C ~ 150°C (TJ) Surface Mount
FCPF400N60

Таблицы данных

FCPF400N60

FCPF400N60

MOSFET N-CH 600V 10A TO220F

onsemi

2017 2.34
- +

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Tube SuperFET® II Active N-Channel MOSFET (Metal Oxide) 600 V 10A (Tc) 10V 400mOhm @ 5A, 10V 3.5V @ 250µA 38 nC @ 10 V ±20V 1580 pF @ 25 V - 31W (Tc) -55°C ~ 150°C (TJ) Through Hole
IRFBE30PBF

Таблицы данных

IRFBE30PBF

IRFBE30PBF

MOSFET N-CH 800V 4.1A TO220AB

Vishay Siliconix

2533 2.35
- +

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Tube - Active N-Channel MOSFET (Metal Oxide) 800 V 4.1A (Tc) 10V 3Ohm @ 2.5A, 10V 4V @ 250µA 78 nC @ 10 V ±20V 1300 pF @ 25 V - 125W (Tc) -55°C ~ 150°C (TJ) Through Hole
CSD19535KTT

Таблицы данных

CSD19535KTT

CSD19535KTT

MOSFET N-CH 100V 200A DDPAK

Texas Instruments

2613 3.76
- +

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Расследования

Tape & Reel (TR),Cut Tape (CT),Digi-Reel® NexFET™ Active N-Channel MOSFET (Metal Oxide) 100 V 200A (Ta) 6V, 10V 3.4mOhm @ 100A, 10V 3.4V @ 250µA 98 nC @ 10 V ±20V 7930 pF @ 50 V - 300W (Tc) -55°C ~ 175°C (TJ) Surface Mount
IRFS7730TRLPBF

Таблицы данных

IRFS7730TRLPBF

IRFS7730TRLPBF

MOSFET N-CH 75V 195A D2PAK

Infineon Technologies

3467 1.00
- +

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Расследования

Tape & Reel (TR),Cut Tape (CT),Digi-Reel®,Bulk HEXFET®, StrongIRFET™ Active N-Channel MOSFET (Metal Oxide) 75 V 195A (Tc) 6V, 10V 2.6mOhm @ 100A, 10V 3.7V @ 250µA 407 nC @ 10 V ±20V 13660 pF @ 25 V - 375W (Tc) -55°C ~ 175°C (TJ) Surface Mount
SI7439DP-T1-GE3

Таблицы данных

SI7439DP-T1-GE3

SI7439DP-T1-GE3

MOSFET P-CH 150V 3A PPAK SO-8

Vishay Siliconix

3497 4.17
- +

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Tape & Reel (TR),Cut Tape (CT),Digi-Reel® TrenchFET® Active P-Channel MOSFET (Metal Oxide) 150 V 3A (Ta) 6V, 10V 90mOhm @ 5.2A, 10V 4V @ 250µA 135 nC @ 10 V ±20V - - 1.9W (Ta) -55°C ~ 150°C (TJ) Surface Mount
IRFS9N60ATRLPBF

Таблицы данных

IRFS9N60ATRLPBF

IRFS9N60ATRLPBF

MOSFET N-CH 600V 9.2A D2PAK

Vishay Siliconix

3084 3.79
- +

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Tape & Reel (TR),Cut Tape (CT),Digi-Reel® - Active N-Channel MOSFET (Metal Oxide) 600 V 9.2A (Tc) 10V 750mOhm @ 5.5A, 10V 4V @ 250µA 49 nC @ 10 V ±30V 1400 pF @ 25 V - 170W (Tc) -55°C ~ 150°C (TJ) Surface Mount
HUF75545S3ST

Таблицы данных

HUF75545S3ST

HUF75545S3ST

MOSFET N-CH 80V 75A D2PAK

onsemi

2927 3.80
- +

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Расследования

Tape & Reel (TR),Cut Tape (CT),Digi-Reel®,Bulk UltraFET™ Active N-Channel MOSFET (Metal Oxide) 80 V 75A (Tc) 10V 10mOhm @ 75A, 10V 4V @ 250µA 235 nC @ 20 V ±20V 3750 pF @ 25 V - 270W (Tc) -55°C ~ 175°C (TJ) Surface Mount
FCPF11N60

Таблицы данных

FCPF11N60

FCPF11N60

MOSFET N-CH 600V 11A TO220F

onsemi

3385 2.39
- +

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Tube SuperFET™ Not For New Designs N-Channel MOSFET (Metal Oxide) 600 V 11A (Tc) 10V 380mOhm @ 5.5A, 10V 5V @ 250µA 52 nC @ 10 V ±30V 1490 pF @ 25 V - 36W (Tc) -55°C ~ 150°C (TJ) Through Hole
RSJ550N10TL

Таблицы данных

RSJ550N10TL

RSJ550N10TL

MOSFET N-CH 100V 55A LPTS

Rohm Semiconductor

2144 4.53
- +

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Расследования

Tape & Reel (TR),Cut Tape (CT),Digi-Reel® - Active N-Channel MOSFET (Metal Oxide) 100 V 55A (Ta) 4V, 10V 16.8mOhm @ 27.5A, 10V 2.5V @ 1mA 143 nC @ 10 V ±20V 6150 pF @ 25 V - 100W (Tc) 150°C (TJ) Surface Mount
IRFU9220PBF

Таблицы данных

IRFU9220PBF

IRFU9220PBF

MOSFET P-CH 200V 3.6A TO251AA

Vishay Siliconix

3801 2.40
- +

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Расследования

Tube - Active P-Channel MOSFET (Metal Oxide) 200 V 3.6A (Tc) 10V 1.5Ohm @ 2.2A, 10V 4V @ 250µA 20 nC @ 10 V ±20V 340 pF @ 25 V - 2.5W (Ta), 42W (Tc) -55°C ~ 150°C (TJ) Through Hole
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