Таблицы данных Фотографии Производитель. Часть # Акции Цены А Packaging Series ProductStatus FETType Technology DraintoSourceVoltage(Vdss) Current-ContinuousDrain(Id)@25°C DriveVoltage(MaxRdsOnMinRdsOn) RdsOn(Max)@IdVgs Vgs(th)(Max)@Id GateCharge(Qg)(Max)@Vgs Vgs(Max) InputCapacitance(Ciss)(Max)@Vds FETFeature PowerDissipation(Max) OperatingTemperature MountingType
IPA80R750P7XKSA1

Таблицы данных

IPA80R750P7XKSA1

IPA80R750P7XKSA1

MOSFET N-CHANNEL 800V 7A TO220

Infineon Technologies

2311 1.00
- +

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Расследования

Bulk,Tube CoolMOS™ P7 Active N-Channel MOSFET (Metal Oxide) 800 V 7A (Tc) 10V 750mOhm @ 2.7A, 10V 3.5V @ 140µA 17 nC @ 10 V ±20V 460 pF @ 500 V - 27W (Tc) -55°C ~ 150°C (TJ) Through Hole
STP3NK90Z

Таблицы данных

STP3NK90Z

STP3NK90Z

MOSFET N-CH 900V 3A TO220AB

STMicroelectronics

3924 2.19
- +

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Расследования

Tube SuperMESH™ Active N-Channel MOSFET (Metal Oxide) 900 V 3A (Tc) 10V 4.8Ohm @ 1.5A, 10V 4.5V @ 50µA 22.7 nC @ 10 V ±30V 590 pF @ 25 V - 90W (Tc) -55°C ~ 150°C (TJ) Through Hole
IPP083N10N5AKSA1

Таблицы данных

IPP083N10N5AKSA1

IPP083N10N5AKSA1

MOSFET N-CH 100V 73A TO220-3

Infineon Technologies

2685 1.00
- +

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Расследования

Bulk,Tube OptiMOS™ Active N-Channel MOSFET (Metal Oxide) 100 V 73A (Tc) 6V, 10V 8.3mOhm @ 73A, 10V 3.8V @ 49µA 37 nC @ 10 V ±20V 2730 pF @ 50 V - 100W (Tc) -55°C ~ 175°C (TJ) Through Hole
IPB65R190C7ATMA2

Таблицы данных

IPB65R190C7ATMA2

IPB65R190C7ATMA2

MOSFET N-CH 650V 13A TO263-3

Infineon Technologies

3656 1.00
- +

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Расследования

Tape & Reel (TR),Cut Tape (CT),Digi-Reel®,Bulk CoolMOS™ C7 Active N-Channel MOSFET (Metal Oxide) 650 V 13A (Tc) 10V 190mOhm @ 5.7A, 10V 4V @ 290µA 23 nC @ 10 V ±20V 1150 pF @ 400 V - 72W (Tc) -55°C ~ 150°C (TJ) Surface Mount
IRFBF20SPBF

Таблицы данных

IRFBF20SPBF

IRFBF20SPBF

MOSFET N-CH 900V 1.7A D2PAK

Vishay Siliconix

2223 2.20
- +

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Расследования

Tube - Active N-Channel MOSFET (Metal Oxide) 900 V 1.7A (Tc) 10V 8Ohm @ 1A, 10V 4V @ 250µA 38 nC @ 10 V ±20V 490 pF @ 25 V - 3.1W (Ta), 54W (Tc) -55°C ~ 150°C (TJ) Surface Mount
TK6R7A10PL,S4X

Таблицы данных

TK6R7A10PL,S4X

TK6R7A10PL,S4X

X35 PB-F POWER MOSFET TRANSISTOR

Toshiba Semiconductor and Storage

2149 1.60
- +

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Расследования

Tube - Active N-Channel MOSFET (Metal Oxide) 100 V 56A (Tc) 4.5V, 10V 6.7mOhm @ 28A, 10V 2.5V @ 500µA 58 nC @ 10 V ±20V 3455 pF @ 50 V - 42W (Tc) 175°C Through Hole
IPA95R1K2P7XKSA1

Таблицы данных

IPA95R1K2P7XKSA1

IPA95R1K2P7XKSA1

MOSFET N-CH 950V 6A TO220

Infineon Technologies

2073 2.20
- +

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Расследования

Tube CoolMOS™ P7 Active N-Channel MOSFET (Metal Oxide) 950 V 6A (Tc) 10V 1.2Ohm @ 2.7A, 10V 3.5V @ 140µA 15 nC @ 10 V ±20V 478 pF @ 400 V - 27W (Tc) -55°C ~ 150°C (TJ) Through Hole
STL220N6F7

Таблицы данных

STL220N6F7

STL220N6F7

MOSFET N-CH 60V 120A POWERFLAT

STMicroelectronics

3920 3.67
- +

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Расследования

Tape & Reel (TR),Cut Tape (CT),Digi-Reel® STripFET™ F7 Active N-Channel MOSFET (Metal Oxide) 60 V 120A (Tc) 10V 1.4mOhm @ 20A, 10V 4V @ 250µA 100 nC @ 10 V ±20V 6600 pF @ 25 V - 4.8W (Ta), 187W (Tc) -55°C ~ 175°C (TJ) Surface Mount
BSC010N04LSIATMA1

Таблицы данных

BSC010N04LSIATMA1

BSC010N04LSIATMA1

MOSFET N-CH 40V 37A/100A TDSON

Infineon Technologies

3381 1.00
- +

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Расследования

Tape & Reel (TR),Cut Tape (CT),Digi-Reel®,Bulk OptiMOS™ Active N-Channel MOSFET (Metal Oxide) 40 V 37A (Ta), 100A (Tc) 4.5V, 10V 1.05mOhm @ 50A, 10V 2V @ 250µA 87 nC @ 10 V ±20V 6200 pF @ 20 V Schottky Diode (Body) 2.5W (Ta), 139W (Tc) -55°C ~ 150°C (TJ) Surface Mount
STP5N95K5

Таблицы данных

STP5N95K5

STP5N95K5

MOSFET N-CH 950V 3.5A TO220

STMicroelectronics

876 2.21
- +

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Расследования

Tube SuperMESH5™ Active N-Channel MOSFET (Metal Oxide) 950 V 3.5A (Tc) 10V 2.5Ohm @ 1.5A, 10V 5V @ 100µA 12.5 nC @ 10 V ±30V 220 pF @ 100 V - 70W (Tc) -55°C ~ 150°C (TJ) Through Hole
BUK9606-75B,118

Таблицы данных

BUK9606-75B,118

BUK9606-75B,118

MOSFET N-CH 75V 75A D2PAK

Nexperia USA Inc.

3146 3.54
- +

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Расследования

Tape & Reel (TR),Cut Tape (CT),Digi-Reel® Automotive, AEC-Q101, TrenchMOS™ Active N-Channel MOSFET (Metal Oxide) 75 V 75A (Tc) 5V, 10V 5.5mOhm @ 25A, 10V 2V @ 1mA 95 nC @ 5 V ±15V 11693 pF @ 25 V - 300W (Tc) -55°C ~ 175°C (TJ) Surface Mount
STP30NF10

Таблицы данных

STP30NF10

STP30NF10

MOSFET N-CH 100V 35A TO220AB

STMicroelectronics

3587 2.22
- +

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Расследования

Tube STripFET™ II Active N-Channel MOSFET (Metal Oxide) 100 V 35A (Tc) 10V 45mOhm @ 15A, 10V 4V @ 250µA 55 nC @ 10 V ±20V 1180 pF @ 25 V - 115W (Tc) -55°C ~ 175°C (TJ) Through Hole
FDP3652

Таблицы данных

FDP3652

FDP3652

MOSFET N-CH 100V 9A/61A TO220-3

onsemi

2496 2.26
- +

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Расследования

Tube PowerTrench® Not For New Designs N-Channel MOSFET (Metal Oxide) 100 V 9A (Ta), 61A (Tc) 6V, 10V 16mOhm @ 61A, 10V 4V @ 250µA 53 nC @ 10 V ±20V 2880 pF @ 25 V - 150W (Tc) -55°C ~ 175°C (TJ) Through Hole
STU7LN80K5

Таблицы данных

STU7LN80K5

STU7LN80K5

MOSFET N-CH 800V 5A IPAK

STMicroelectronics

3719 2.27
- +

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Расследования

Tube MDmesh™ Active N-Channel MOSFET (Metal Oxide) 800 V 5A (Tc) 10V 1.15Ohm @ 2.5A, 10V 5V @ 100µA 12 nC @ 10 V ±30V 270 pF @ 100 V - 85W (Tc) -55°C ~ 150°C (TJ) Through Hole
CSD18535KTT

Таблицы данных

CSD18535KTT

CSD18535KTT

MOSFET N-CH 60V 200A DDPAK

Texas Instruments

3105 3.63
- +

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Расследования

Tape & Reel (TR),Cut Tape (CT),Digi-Reel® NexFET™ Active N-Channel MOSFET (Metal Oxide) 60 V 200A (Ta) 4.5V, 10V 2mOhm @ 100A, 10V 2.4V @ 250µA 81 nC @ 10 V ±20V 6620 pF @ 30 V - 300W (Tc) -55°C ~ 175°C (TJ) Surface Mount
IPB120P04P4L03ATMA1

Таблицы данных

IPB120P04P4L03ATMA1

IPB120P04P4L03ATMA1

MOSFET P-CH 40V 120A D2PAK

Infineon Technologies

2371 4.14
- +

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Расследования

Tape & Reel (TR),Cut Tape (CT),Digi-Reel® OptiMOS™ Not For New Designs P-Channel MOSFET (Metal Oxide) 40 V 120A (Tc) 4.5V, 10V 3.1mOhm @ 100A, 10V 2.2V @ 340µA 234 nC @ 10 V ±16V 15000 pF @ 25 V - 136W (Tc) -55°C ~ 175°C (TJ) Surface Mount
IPB120P04P4L03ATMA2

Таблицы данных

IPB120P04P4L03ATMA2

IPB120P04P4L03ATMA2

MOSFET P-CH 40V 120A TO263-3

Infineon Technologies

2537 4.14
- +

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Расследования

Tape & Reel (TR),Cut Tape (CT),Digi-Reel® OptiMOS®-P2 Active P-Channel MOSFET (Metal Oxide) 40 V 120A (Tc) 4.5V, 10V 3.4mOhm @ 100A, 10V 2.2V @ 340µA 234 nC @ 10 V +5V, -16V 15000 pF @ 25 V - 136W (Tc) -55°C ~ 175°C (TJ) Surface Mount
STP13N60M2

Таблицы данных

STP13N60M2

STP13N60M2

MOSFET N-CH 600V 11A TO220

STMicroelectronics

3574 2.28
- +

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Расследования

Tube MDmesh™ II Plus Active N-Channel MOSFET (Metal Oxide) 600 V 11A (Tc) 10V 380mOhm @ 5.5A, 10V 4V @ 250µA 17 nC @ 10 V ±25V 580 pF @ 100 V - 110W (Tc) -55°C ~ 150°C (TJ) Through Hole
PSMN8R7-80PS,127

Таблицы данных

PSMN8R7-80PS,127

PSMN8R7-80PS,127

MOSFET N-CH 80V 90A TO220AB

Nexperia USA Inc.

3884 2.29
- +

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Расследования

Tube - Active N-Channel MOSFET (Metal Oxide) 80 V 90A (Tc) 10V 8.7mOhm @ 10A, 10V 4V @ 1mA 52 nC @ 10 V ±20V 3346 pF @ 40 V - 170W (Tc) -55°C ~ 175°C (TJ) Through Hole
IPP040N06N3GXKSA1

Таблицы данных

IPP040N06N3GXKSA1

IPP040N06N3GXKSA1

MOSFET N-CH 60V 90A TO220-3

Infineon Technologies

3388 2.29
- +

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Расследования

Tube OptiMOS™ Active N-Channel MOSFET (Metal Oxide) 60 V 90A (Tc) 10V 4mOhm @ 90A, 10V 4V @ 90µA 98 nC @ 10 V ±20V 11000 pF @ 30 V - 188W (Tc) -55°C ~ 175°C (TJ) Through Hole
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