Грузовой вагон ( )| Таблицы данных | Фотографии | Производитель. Часть # | Акции | Цены | А | Packaging | Series | ProductStatus | FETType | Technology | DraintoSourceVoltage(Vdss) | Current-ContinuousDrain(Id)@25°C | DriveVoltage(MaxRdsOnMinRdsOn) | RdsOn(Max)@IdVgs | Vgs(th)(Max)@Id | GateCharge(Qg)(Max)@Vgs | Vgs(Max) | InputCapacitance(Ciss)(Max)@Vds | FETFeature | PowerDissipation(Max) | OperatingTemperature | MountingType |
|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|
Таблицы данных |
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FDMC8321LDCMOSFET N-CH 40V 27A DLCOOL33 |
2990 | 3.88 |
ДобавитьРасследования |
Tape & Reel (TR),Cut Tape (CT),Digi-Reel® | PowerTrench® | Active | N-Channel | MOSFET (Metal Oxide) | 40 V | 27A (Ta), 108A (Tc) | 4.5V, 10V | 2.5mOhm @ 27A, 10V | 3V @ 250µA | 60 nC @ 10 V | ±20V | 3965 pF @ 20 V | - | 2.9W (Ta), 56W (Tc) | -55°C ~ 150°C (TJ) | Surface Mount |
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Таблицы данных |
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FCB11N60TMMOSFET N-CH 600V 11A D2PAK |
2939 | 3.11 |
ДобавитьРасследования |
Tape & Reel (TR),Cut Tape (CT),Digi-Reel® | SuperFET™ | Active | N-Channel | MOSFET (Metal Oxide) | 600 V | 11A (Tc) | 10V | 380mOhm @ 5.5A, 10V | 5V @ 250µA | 52 nC @ 10 V | ±30V | 1490 pF @ 25 V | - | 125W (Tc) | -55°C ~ 150°C (TJ) | Surface Mount |
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Таблицы данных |
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FQP44N10MOSFET N-CH 100V 43.5A TO220-3 |
1999 | 1.95 |
ДобавитьРасследования |
Tube | QFET® | Last Time Buy | N-Channel | MOSFET (Metal Oxide) | 100 V | 43.5A (Tc) | 10V | 39mOhm @ 21.75A, 10V | 4V @ 250µA | 62 nC @ 10 V | ±25V | 1800 pF @ 25 V | - | 146W (Tc) | -55°C ~ 175°C (TJ) | Through Hole |
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Таблицы данных |
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TK22E10N1,S1XMOSFET N CH 100V 52A TO220 |
3589 | 1.42 |
ДобавитьРасследования |
Tube | U-MOSVIII-H | Active | N-Channel | MOSFET (Metal Oxide) | 100 V | 52A (Tc) | 10V | 13.8mOhm @ 11A, 10V | 4V @ 300µA | 28 nC @ 10 V | ±20V | 1800 pF @ 50 V | - | 72W (Tc) | 150°C (TJ) | Through Hole |
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Таблицы данных |
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STP3NK80ZMOSFET N-CH 800V 2.5A TO220AB |
3127 | 1.96 |
ДобавитьРасследования |
Tube | SuperMESH™ | Active | N-Channel | MOSFET (Metal Oxide) | 800 V | 2.5A (Tc) | 10V | 4.5Ohm @ 1.25A, 10V | 4.5V @ 50µA | 19 nC @ 10 V | ±30V | 485 pF @ 25 V | - | 70W (Tc) | -55°C ~ 150°C (TJ) | Through Hole |
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Таблицы данных |
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IRFIZ34NPBFMOSFET N-CH 55V 21A TO220AB FP |
2870 | 1.96 |
ДобавитьРасследования |
Tube | HEXFET® | Active | N-Channel | MOSFET (Metal Oxide) | 55 V | 21A (Tc) | 10V | 40mOhm @ 11A, 10V | 4V @ 250µA | 34 nC @ 10 V | ±20V | 700 pF @ 25 V | - | 37W (Tc) | -55°C ~ 175°C (TJ) | Through Hole |
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Таблицы данных |
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STP100N6F7MOSFET N-CH 60V 100A TO220 |
2968 | 1.96 |
ДобавитьРасследования |
Tube | STripFET™ F7 | Active | N-Channel | MOSFET (Metal Oxide) | 60 V | 100A (Tc) | 10V | 5.6mOhm @ 50A, 10V | 4V @ 250µA | 30 nC @ 10 V | ±20V | 1980 pF @ 25 V | - | 125W (Tc) | -55°C ~ 175°C (TJ) | Through Hole |
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Таблицы данных |
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BUK964R7-80E,118MOSFET N-CH 80V 120A D2PAK |
2228 | 3.55 |
ДобавитьРасследования |
Tape & Reel (TR),Cut Tape (CT),Digi-Reel® | Automotive, AEC-Q101, TrenchMOS™ | Active | N-Channel | MOSFET (Metal Oxide) | 80 V | 120A (Tc) | 5V | 4.5mOhm @ 25A, 10V | 2.1V @ 1mA | 92.1 nC @ 5 V | ±10V | 15340 pF @ 25 V | - | 324W (Tc) | -55°C ~ 175°C (TJ) | Surface Mount |
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Таблицы данных |
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STI13NM60NMOSFET N-CH 600V 11A I2PAK |
2237 | 2.23 |
ДобавитьРасследования |
Tube | MDmesh™ II | Active | N-Channel | MOSFET (Metal Oxide) | 600 V | 11A (Tc) | 10V | 360mOhm @ 5.5A, 10V | 4V @ 250µA | 30 nC @ 10 V | ±25V | 790 pF @ 50 V | - | 90W (Tc) | -55°C ~ 150°C (TJ) | Through Hole |
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Таблицы данных |
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IRL620SPBFMOSFET N-CH 200V 5.2A D2PAK |
2502 | 2.24 |
ДобавитьРасследования |
Tube | - | Active | N-Channel | MOSFET (Metal Oxide) | 200 V | 5.2A (Tc) | 4V, 10V | 800mOhm @ 3.1A, 10V | 2V @ 250µA | 16 nC @ 5 V | ±10V | 360 pF @ 25 V | - | 3.1W (Ta), 50W (Tc) | -55°C ~ 150°C (TJ) | Surface Mount |
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Таблицы данных |
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IPB180N04S401ATMA1MOSFET N-CH 40V 180A TO263-7 |
3800 | 1.00 |
ДобавитьРасследования |
Tape & Reel (TR),Cut Tape (CT),Digi-Reel®,Bulk | OptiMOS™ | Active | N-Channel | MOSFET (Metal Oxide) | 40 V | 180A (Tc) | 10V | 1.3mOhm @ 100A, 10V | 4V @ 140µA | 176 nC @ 10 V | ±20V | 14000 pF @ 25 V | - | 188W (Tc) | -55°C ~ 175°C (TJ) | Surface Mount |
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Таблицы данных |
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IPA80R900P7XKSA1MOSFET N-CH 800V 6A TO220 |
3493 | 1.00 |
ДобавитьРасследования |
Bulk,Tube | CoolMOS™ P7 | Active | N-Channel | MOSFET (Metal Oxide) | 800 V | 6A (Tc) | 10V | 900mOhm @ 2.2A, 10V | 3.5V @ 110µA | 15 nC @ 10 V | ±20V | 350 pF @ 500 V | - | 26W (Tc) | -55°C ~ 150°C (TJ) | Through Hole |
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Таблицы данных |
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BUK763R1-60E,118MOSFET N-CH 60V 120A D2PAK |
2065 | 3.15 |
ДобавитьРасследования |
Tape & Reel (TR),Cut Tape (CT),Digi-Reel® | Automotive, AEC-Q101, TrenchMOS™ | Active | N-Channel | MOSFET (Metal Oxide) | 60 V | 120A (Tc) | 10V | 3.1mOhm @ 25A, 10V | 4V @ 1mA | 114 nC @ 10 V | ±20V | 8920 pF @ 25 V | - | 293W (Tc) | -55°C ~ 175°C (TJ) | Surface Mount |
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Таблицы данных |
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TP0620N3-GMOSFET P-CH 200V 175MA TO92-3 |
3143 | 1.98 |
ДобавитьРасследования |
Bag | - | Active | P-Channel | MOSFET (Metal Oxide) | 200 V | 175mA (Tj) | 5V, 10V | 12Ohm @ 200mA, 10V | 2.4V @ 1mA | - | ±20V | 150 pF @ 25 V | - | 1W (Ta) | -55°C ~ 150°C (TJ) | Through Hole |
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Таблицы данных |
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IRF9Z20PBFMOSFET P-CH 50V 9.7A TO220AB |
3846 | 2.00 |
ДобавитьРасследования |
Tube | - | Active | P-Channel | MOSFET (Metal Oxide) | 50 V | 9.7A (Tc) | 10V | 280mOhm @ 5.6A, 10V | 4V @ 250µA | 26 nC @ 10 V | ±20V | 480 pF @ 25 V | - | 40W (Tc) | -55°C ~ 150°C (TJ) | Through Hole |
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Таблицы данных |
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TN2640N3-GMOSFET N-CH 400V 220MA TO92-3 |
3033 | 2.00 |
ДобавитьРасследования |
Bag | - | Active | N-Channel | MOSFET (Metal Oxide) | 400 V | 220mA (Tj) | 4.5V, 10V | 5Ohm @ 500mA, 10V | 2V @ 2mA | - | ±20V | 225 pF @ 25 V | - | 740mW (Ta) | -55°C ~ 150°C (TJ) | Through Hole |
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Таблицы данных |
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RCX300N20MOSFET N-CH 200V 30A TO220FM |
3631 | 2.00 |
ДобавитьРасследования |
Bulk | - | Active | N-Channel | MOSFET (Metal Oxide) | 200 V | 30A (Tc) | 10V | 80mOhm @ 15A, 10V | 5V @ 1mA | 60 nC @ 10 V | ±30V | 3200 pF @ 25 V | - | 2.23W (Ta), 40W (Tc) | 150°C (TJ) | Through Hole |
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Таблицы данных |
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STF5N80K5MOSFET N-CH 800V 4A TO220FP |
3052 | 2.00 |
ДобавитьРасследования |
Tube | MDmesh™ | Active | N-Channel | MOSFET (Metal Oxide) | 800 V | 4A (Ta) | 10V | 1.75Ohm @ 2A, 10V | 5V @ 100µA | 5 nC @ 10 V | ±30V | 177 pF @ 100 V | - | 20W (Tc) | -55°C ~ 150°C (TJ) | Through Hole |
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Таблицы данных |
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SUM50020EL-GE3MOSFET N-CH 60V 120A TO263 |
2369 | 3.21 |
ДобавитьРасследования |
Tape & Reel (TR),Cut Tape (CT),Digi-Reel® | TrenchFET® | Active | N-Channel | MOSFET (Metal Oxide) | 60 V | 120A (Tc) | 4.5V, 10V | 2.1mOhm @ 30A, 10V | 2.5V @ 250µA | 126 nC @ 10 V | ±20V | 11113 pF @ 30 V | - | 375W (Tc) | -55°C ~ 175°C (TJ) | Surface Mount |
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Таблицы данных |
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SUM90140E-GE3MOSFET N-CH 200V 90A D2PAK |
2687 | 3.21 |
ДобавитьРасследования |
Tape & Reel (TR),Cut Tape (CT),Digi-Reel® | ThunderFET® | Active | N-Channel | MOSFET (Metal Oxide) | 200 V | 90A (Tc) | 7.5V, 10V | 17mOhm @ 30A, 10V | 4V @ 250µA | 96 nC @ 10 V | ±20V | 4132 pF @ 100 V | - | 375W (Tc) | -55°C ~ 175°C (TJ) | Surface Mount |
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