Таблицы данных Фотографии Производитель. Часть # Акции Цены А Packaging Series ProductStatus FETType Technology DraintoSourceVoltage(Vdss) Current-ContinuousDrain(Id)@25°C DriveVoltage(MaxRdsOnMinRdsOn) RdsOn(Max)@IdVgs Vgs(th)(Max)@Id GateCharge(Qg)(Max)@Vgs Vgs(Max) InputCapacitance(Ciss)(Max)@Vds FETFeature PowerDissipation(Max) OperatingTemperature MountingType
BUK7610-55AL,118

Таблицы данных

BUK7610-55AL,118

BUK7610-55AL,118

MOSFET N-CH 55V 75A D2PAK

Nexperia USA Inc.

2593 3.00
- +

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Расследования

Tape & Reel (TR),Cut Tape (CT),Digi-Reel® Automotive, AEC-Q101, TrenchMOS™ Active N-Channel MOSFET (Metal Oxide) 55 V 75A (Tc) 10V 10mOhm @ 25A, 10V 4V @ 1mA 124 nC @ 10 V ±20V 6280 pF @ 25 V - 300W (Tc) -55°C ~ 175°C (TJ) Surface Mount
IPAN60R360PFD7SXKSA1

Таблицы данных

IPAN60R360PFD7SXKSA1

IPAN60R360PFD7SXKSA1

MOSFET N-CH 650V 10A TO220

Infineon Technologies

3556 1.88
- +

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Расследования

Tube CoolMOS™PFD7 Active N-Channel MOSFET (Metal Oxide) 650 V 10A (Tc) 10V 360mOhm @ 2.9A, 10V 4.5V @ 140µA 12.7 nC @ 10 V ±20V 534 pF @ 400 V - 23W (Tc) -40°C ~ 150°C (TJ) Through Hole
IRF720SPBF

Таблицы данных

IRF720SPBF

IRF720SPBF

MOSFET N-CH 400V 3.3A D2PAK

Vishay Siliconix

3013 1.88
- +

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Расследования

Tube - Active N-Channel MOSFET (Metal Oxide) 400 V 3.3A (Tc) 10V 1.8Ohm @ 2A, 10V 4V @ 250µA 20 nC @ 10 V ±20V 410 pF @ 25 V - 3.1W (Ta), 50W (Tc) -55°C ~ 150°C (TJ) Surface Mount
IRFI830GPBF

Таблицы данных

IRFI830GPBF

IRFI830GPBF

MOSFET N-CH 500V 3.1A TO220-3

Vishay Siliconix

3285 1.88
- +

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Tube - Active N-Channel MOSFET (Metal Oxide) 500 V 3.1A (Tc) 10V 1.5Ohm @ 1.9A, 10V 4V @ 250µA 38 nC @ 10 V ±20V 610 pF @ 25 V - 35W (Tc) -55°C ~ 150°C (TJ) Through Hole
CSD18533KCS

Таблицы данных

CSD18533KCS

CSD18533KCS

MOSFET N-CH 60V 72A/100A TO220-3

Texas Instruments

3386 1.88
- +

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Tube NexFET™ Active N-Channel MOSFET (Metal Oxide) 60 V 72A (Ta), 100A (Tc) 4.5V, 10V 6.3mOhm @ 75A, 10V 2.3V @ 250µA 34 nC @ 10 V ±20V 3025 pF @ 30 V - 192W (Tc) -55°C ~ 175°C (TJ) Through Hole
SIHD12N50E-GE3

Таблицы данных

SIHD12N50E-GE3

SIHD12N50E-GE3

MOSFET N-CH 550V 10.5A DPAK

Vishay Siliconix

3074 1.88
- +

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Расследования

Tube E Active N-Channel MOSFET (Metal Oxide) 550 V 10.5A (Tc) 10V 380mOhm @ 6A, 10V 4V @ 250µA 50 nC @ 10 V ±30V 886 pF @ 100 V - 114W (Tc) -55°C ~ 150°C (TA) Surface Mount
SIHD11N80AE-GE3 SIHD11N80AE-GE3

SIHD11N80AE-GE3

MOSFET N-CH 800V 8A TO252AA

Vishay Siliconix

3214 1.88
- +

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Tube E Active N-Channel MOSFET (Metal Oxide) 800 V 8A (Tc) 10V 450mOhm @ 5.5A, 10V 4V @ 250µA 42 nC @ 10 V ±30V 804 pF @ 100 V - 78W (Tc) -55°C ~ 150°C (TJ) Surface Mount
IRFR9220PBF

Таблицы данных

IRFR9220PBF

IRFR9220PBF

MOSFET P-CH 200V 3.6A DPAK

Vishay Siliconix

2848 1.92
- +

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Расследования

Tube - Active P-Channel MOSFET (Metal Oxide) 200 V 3.6A (Tc) 10V 1.5Ohm @ 2.2A, 10V 4V @ 250µA 20 nC @ 10 V ±20V 340 pF @ 25 V - 2.5W (Ta), 42W (Tc) -55°C ~ 150°C (TJ) Surface Mount
DMTH6004SCTBQ-13

Таблицы данных

DMTH6004SCTBQ-13

DMTH6004SCTBQ-13

MOSFET N-CH 60V 100A TO263AB

Diodes Incorporated

2598 3.24
- +

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Расследования

Tape & Reel (TR),Cut Tape (CT),Digi-Reel® Automotive, AEC-Q101 Active N-Channel MOSFET (Metal Oxide) 60 V 100A (Tc) 10V 3.4mOhm @ 100A, 10V 4V @ 250µA 95.4 nC @ 10 V ±20V 4556 pF @ 30 V - 4.7W (Ta), 136W (Tc) -55°C ~ 175°C (TJ) Surface Mount
STB40NF10LT4

Таблицы данных

STB40NF10LT4

STB40NF10LT4

MOSFET N-CH 100V 40A D2PAK

STMicroelectronics

2444 3.20
- +

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Расследования

Tape & Reel (TR),Cut Tape (CT),Digi-Reel® STripFET™ II Active N-Channel MOSFET (Metal Oxide) 100 V 40A (Tc) 5V, 10V 33mOhm @ 20A, 10V 2.5V @ 250µA 64 nC @ 4.5 V ±15V 2300 pF @ 25 V - 150W (Tc) -65°C ~ 175°C (TJ) Surface Mount
IRF640STRRPBF

Таблицы данных

IRF640STRRPBF

IRF640STRRPBF

MOSFET N-CH 200V 18A TO263

Vishay Siliconix

3484 3.24
- +

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Расследования

Tape & Reel (TR),Cut Tape (CT),Digi-Reel® - Active N-Channel MOSFET (Metal Oxide) 200 V 18A (Tc) 10V 180mOhm @ 11A, 10V 4V @ 250µA 70 nC @ 10 V ±20V 1300 pF @ 25 V - 3.1W (Ta), 130W (Tc) -55°C ~ 150°C (TJ) Surface Mount
IRL540STRLPBF

Таблицы данных

IRL540STRLPBF

IRL540STRLPBF

MOSFET N-CH 100V 28A D2PAK

Vishay Siliconix

2427 3.24
- +

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Расследования

Tape & Reel (TR),Cut Tape (CT),Digi-Reel® - Active N-Channel MOSFET (Metal Oxide) 100 V 28A (Tc) 4V, 5V 77mOhm @ 17A, 5V 2V @ 250µA 64 nC @ 5 V ±10V 2200 pF @ 25 V - 3.7W (Ta), 150W (Tc) -55°C ~ 175°C (TJ) Surface Mount
TK5R3A06PL,S4X

Таблицы данных

TK5R3A06PL,S4X

TK5R3A06PL,S4X

X35 PB-F POWER MOSFET TRANSISTOR

Toshiba Semiconductor and Storage

2804 1.40
- +

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Расследования

Tube - Active N-Channel MOSFET (Metal Oxide) 60 V 56A (Tc) 4.5V, 10V 5.3mOhm @ 28A, 10V 2.5V @ 300µA 36 nC @ 10 V ±20V 2380 pF @ 30 V - 36W (Tc) 175°C Through Hole
IRF740ASTRLPBF

Таблицы данных

IRF740ASTRLPBF

IRF740ASTRLPBF

MOSFET N-CH 400V 10A D2PAK

Vishay Siliconix

2737 3.24
- +

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Расследования

Tape & Reel (TR),Cut Tape (CT),Digi-Reel® - Active N-Channel MOSFET (Metal Oxide) 400 V 10A (Tc) 10V 550mOhm @ 6A, 10V 4V @ 250µA 36 nC @ 10 V ±30V 1030 pF @ 25 V - 125W (Tc) -55°C ~ 150°C (TJ) Surface Mount
IPA60R950C6XKSA1

Таблицы данных

IPA60R950C6XKSA1

IPA60R950C6XKSA1

MOSFET N-CH 600V 4.4A TO220-FP

Infineon Technologies

3274 1.93
- +

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Расследования

Tube CoolMOS™ Not For New Designs N-Channel MOSFET (Metal Oxide) 600 V 4.4A (Tc) 10V 950mOhm @ 1.5A, 10V 3.5V @ 130µA 13 nC @ 10 V ±20V 280 pF @ 100 V - 26W (Tc) -55°C ~ 150°C (TJ) Through Hole
VN2406L-G

Таблицы данных

VN2406L-G

VN2406L-G

MOSFET N-CH 240V 190MA TO92-3

Microchip Technology

2158 1.93
- +

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Расследования

Bag - Active N-Channel MOSFET (Metal Oxide) 240 V 190mA (Tj) 2.5V, 10V 6Ohm @ 500mA, 10V 2V @ 1mA - ±20V 125 pF @ 25 V - 1W (Tc) -55°C ~ 150°C (TJ) Through Hole
IRF60B217

Таблицы данных

IRF60B217

IRF60B217

MOSFET N-CH 60V 60A TO220AB

Infineon Technologies

2645 1.93
- +

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Расследования

Bulk,Tube StrongIRFET™ Active N-Channel MOSFET (Metal Oxide) 60 V 60A (Tc) 6V, 10V 9mOhm @ 36A, 10V 3.7V @ 50µA 66 nC @ 10 V ±20V 2230 pF @ 25 V - 83W (Tc) -55°C ~ 175°C (TJ) Through Hole
CSD18502Q5B

Таблицы данных

CSD18502Q5B

CSD18502Q5B

MOSFET N-CH 40V 26A/100A 8VSON

Texas Instruments

2969 2.86
- +

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Расследования

Tape & Reel (TR),Cut Tape (CT),Digi-Reel® NexFET™ Active N-Channel MOSFET (Metal Oxide) 40 V 26A (Ta), 100A (Tc) 4.5V, 10V 2.3mOhm @ 30A, 10V 2.2V @ 250µA 68 nC @ 10 V ±20V 5070 pF @ 20 V - 3.2W (Ta), 156W (Tc) -55°C ~ 150°C (TJ) Surface Mount
IPB80N06S2L07ATMA3

Таблицы данных

IPB80N06S2L07ATMA3

IPB80N06S2L07ATMA3

MOSFET N-CH 55V 80A TO263-3

Infineon Technologies

2369 1.00
- +

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Расследования

Tape & Reel (TR),Cut Tape (CT),Digi-Reel®,Bulk OptiMOS™ Active N-Channel MOSFET (Metal Oxide) 55 V 80A (Tc) 4.5V, 10V 6.7mOhm @ 60A, 10V 2V @ 150µA 130 nC @ 10 V ±20V 3160 pF @ 25 V - 210W (Tc) -55°C ~ 175°C (TJ) Surface Mount
SUD50P08-25L-BE3 SUD50P08-25L-BE3

SUD50P08-25L-BE3

MOSFET P-CH 80V 12.5A/50A DPAK

Vishay Siliconix

7900 2.79
- +

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Расследования

Tape & Reel (TR),Cut Tape (CT),Digi-Reel® TrenchFET® Active P-Channel MOSFET (Metal Oxide) 80 V 12.5A (Ta), 50A (Tc) 4.5V, 10V 25.2mOhm @ 12.5A, 10V 3V @ 250µA 160 nC @ 10 V ±20V 4700 pF @ 40 V - 8.3W (Ta), 136W (Tc) -55°C ~ 175°C (TJ) Surface Mount
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