Таблицы данных Фотографии Производитель. Часть # Акции Цены А Packaging Series ProductStatus FETType Technology DraintoSourceVoltage(Vdss) Current-ContinuousDrain(Id)@25°C DriveVoltage(MaxRdsOnMinRdsOn) RdsOn(Max)@IdVgs Vgs(th)(Max)@Id GateCharge(Qg)(Max)@Vgs Vgs(Max) InputCapacitance(Ciss)(Max)@Vds FETFeature PowerDissipation(Max) OperatingTemperature MountingType
IRLR120PBF

Таблицы данных

IRLR120PBF

IRLR120PBF

MOSFET N-CH 100V 7.7A DPAK

Vishay Siliconix

3131 1.73
- +

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Tube - Active N-Channel MOSFET (Metal Oxide) 100 V 7.7A (Tc) 4V, 5V 270mOhm @ 4.6A, 5V 2V @ 250µA 12 nC @ 5 V ±10V 490 pF @ 25 V - 2.5W (Ta), 42W (Tc) -55°C ~ 150°C (TJ) Surface Mount
IRFZ44STRLPBF

Таблицы данных

IRFZ44STRLPBF

IRFZ44STRLPBF

MOSFET N-CH 60V 50A D2PAK

Vishay Siliconix

2219 2.92
- +

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Расследования

Tape & Reel (TR),Cut Tape (CT),Digi-Reel® - Active N-Channel MOSFET (Metal Oxide) 60 V 50A (Tc) 10V 28mOhm @ 31A, 10V 4V @ 250µA 67 nC @ 10 V ±20V 1900 pF @ 25 V - 3.7W (Ta), 150W (Tc) -55°C ~ 175°C (TJ) Surface Mount
SI7658ADP-T1-GE3

Таблицы данных

SI7658ADP-T1-GE3

SI7658ADP-T1-GE3

MOSFET N-CH 30V 60A PPAK SO-8

Vishay Siliconix

3705 3.06
- +

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Расследования

Tape & Reel (TR),Cut Tape (CT),Digi-Reel® TrenchFET® Active N-Channel MOSFET (Metal Oxide) 30 V 60A (Tc) 4.5V, 10V 2.2mOhm @ 20A, 10V 2.5V @ 250µA 110 nC @ 10 V ±20V 4590 pF @ 15 V - 5.4W (Ta), 83W (Tc) -55°C ~ 150°C (TJ) Surface Mount
SI7430DP-T1-GE3

Таблицы данных

SI7430DP-T1-GE3

SI7430DP-T1-GE3

MOSFET N-CH 150V 26A PPAK SO-8

Vishay Siliconix

3869 3.06
- +

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Расследования

Tape & Reel (TR),Cut Tape (CT),Digi-Reel® - Active N-Channel MOSFET (Metal Oxide) 150 V 26A (Tc) 8V, 10V 45mOhm @ 5A, 10V 4.5V @ 250µA 43 nC @ 10 V ±20V 1735 pF @ 50 V - 5.2W (Ta), 64W (Tc) -55°C ~ 150°C (TJ) Surface Mount
SI7148DP-T1-GE3

Таблицы данных

SI7148DP-T1-GE3

SI7148DP-T1-GE3

MOSFET N-CH 75V 28A PPAK SO-8

Vishay Siliconix

2227 3.06
- +

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Tape & Reel (TR),Cut Tape (CT),Digi-Reel® TrenchFET® Active N-Channel MOSFET (Metal Oxide) 75 V 28A (Tc) 10V 11mOhm @ 15A, 10V 2.5V @ 250µA 100 nC @ 10 V ±20V 2900 pF @ 35 V - 5.4W (Ta), 96W (Tc) -55°C ~ 150°C (TJ) Surface Mount
ZVN4306A

Таблицы данных

ZVN4306A

ZVN4306A

MOSFET N-CH 60V 1.1A TO92-3

Diodes Incorporated

3527 1.74
- +

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Расследования

Bulk - Active N-Channel MOSFET (Metal Oxide) 60 V 1.1A (Ta) 5V, 10V 330mOhm @ 3A, 10V 3V @ 1mA - ±20V 350 pF @ 25 V - 850mW (Ta) -55°C ~ 150°C (TJ) Through Hole
IRF740STRLPBF

Таблицы данных

IRF740STRLPBF

IRF740STRLPBF

MOSFET N-CH 400V 10A D2PAK

Vishay Siliconix

3795 2.93
- +

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Расследования

Tape & Reel (TR),Cut Tape (CT),Digi-Reel® - Active N-Channel MOSFET (Metal Oxide) 400 V 10A (Tc) 10V 550mOhm @ 6A, 10V 4V @ 250µA 63 nC @ 10 V ±20V 1400 pF @ 25 V - 3.1W (Ta), 125W (Tc) -55°C ~ 150°C (TJ) Surface Mount
STD5N95K3

Таблицы данных

STD5N95K3

STD5N95K3

MOSFET N-CH 950V 4A DPAK

STMicroelectronics

2955 3.23
- +

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Расследования

Tape & Reel (TR),Cut Tape (CT),Digi-Reel® SuperMESH3™ Active N-Channel MOSFET (Metal Oxide) 950 V 4A (Tc) 10V 3.5Ohm @ 2A, 10V 5V @ 100µA 19 nC @ 10 V ±30V 460 pF @ 25 V - 90W (Tc) -55°C ~ 150°C (TJ) Surface Mount
FDBL86566-F085

Таблицы данных

FDBL86566-F085

FDBL86566-F085

MOSFET N-CH 60V 240A 8HPSOF

onsemi

2194 3.47
- +

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Tape & Reel (TR),Cut Tape (CT),Digi-Reel® Automotive, AEC-Q101, PowerTrench® Active N-Channel MOSFET (Metal Oxide) 60 V 240A (Tc) 10V 2.4mOhm @ 80A, 10V 4V @ 250µA 110 nC @ 10 V ±20V 6655 pF @ 30 V - 300W (Tj) -55°C ~ 175°C (TJ) Surface Mount
SI7852DP-T1-GE3

Таблицы данных

SI7852DP-T1-GE3

SI7852DP-T1-GE3

MOSFET N-CH 80V 7.6A PPAK SO-8

Vishay Siliconix

2107 3.09
- +

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Tape & Reel (TR),Cut Tape (CT),Digi-Reel® TrenchFET® Active N-Channel MOSFET (Metal Oxide) 80 V 7.6A (Ta) 6V, 10V 16.5mOhm @ 10A, 10V 2V @ 250µA (Min) 41 nC @ 10 V ±20V - - 1.9W (Ta) -55°C ~ 150°C (TJ) Surface Mount
ZVP0545A

Таблицы данных

ZVP0545A

ZVP0545A

MOSFET P-CH 450V 45MA TO92-3

Diodes Incorporated

3200 1.75
- +

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Bulk - Active P-Channel MOSFET (Metal Oxide) 450 V 45mA (Ta) 10V 150Ohm @ 50mA, 10V 4.5V @ 1mA - ±20V 120 pF @ 25 V - 700mW (Ta) -55°C ~ 150°C (TJ) Through Hole
2SK3566(STA4,Q,M)

Таблицы данных

2SK3566(STA4,Q,M)

2SK3566(STA4,Q,M)

MOSFET N-CH 900V 2.5A TO220SIS

Toshiba Semiconductor and Storage

3844 1.75
- +

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Tube π-MOSIV Active N-Channel MOSFET (Metal Oxide) 900 V 2.5A (Ta) 10V 6.4Ohm @ 1.5A, 10V 4V @ 1mA 12 nC @ 10 V ±30V 470 pF @ 25 V - 40W (Tc) 150°C (TJ) Through Hole
STF2N95K5

Таблицы данных

STF2N95K5

STF2N95K5

MOSFET N-CH 950V 2A TO220FP

STMicroelectronics

3953 1.75
- +

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Tube SuperMESH5™ Active N-Channel MOSFET (Metal Oxide) 950 V 2A (Tc) 10V 5Ohm @ 1A, 10V 5V @ 100µA 10 nC @ 10 V 30V 105 pF @ 100 V - 20W (Tc) -55°C ~ 150°C (TJ) Through Hole
SUP90330E-GE3

Таблицы данных

SUP90330E-GE3

SUP90330E-GE3

MOSFET N-CH 200V 35.8A TO220AB

Vishay Siliconix

3443 1.75
- +

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Tube ThunderFET® Active N-Channel MOSFET (Metal Oxide) 200 V 35.8A (Tc) 7.5V, 10V 37.5mOhm @ 12.2A, 10V 4V @ 250µA 32 nC @ 10 V ±20V 1172 pF @ 100 V - 125W (Tc) -55°C ~ 175°C (TJ) Through Hole
IPB65R310CFDATMA1

Таблицы данных

IPB65R310CFDATMA1

IPB65R310CFDATMA1

MOSFET N-CH 650V 11.4A D2PAK

Infineon Technologies

3358 1.77
- +

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Tape & Reel (TR),Cut Tape (CT),Digi-Reel® CoolMOS™ Not For New Designs N-Channel MOSFET (Metal Oxide) 650 V 11.4A (Tc) 10V 310mOhm @ 4.4A, 10V 4.5V @ 400µA 41 nC @ 10 V ±20V 1100 pF @ 100 V - 104.2W (Tc) -55°C ~ 150°C (TJ) Surface Mount
PSMN034-100PS,127

Таблицы данных

PSMN034-100PS,127

PSMN034-100PS,127

MOSFET N-CH 100V 32A TO220AB

Nexperia USA Inc.

2460 1.77
- +

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Tube - Active N-Channel MOSFET (Metal Oxide) 100 V 32A (Tc) 10V 34.5mOhm @ 15A, 10V 4V @ 1mA 23.8 nC @ 10 V ±20V 1201 pF @ 50 V - 86W (Tc) -55°C ~ 175°C (TJ) Through Hole
FDPF14N30

Таблицы данных

FDPF14N30

FDPF14N30

MOSFET N-CH 300V 14A TO220F

onsemi

2227 1.78
- +

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Tube UniFET™ Last Time Buy N-Channel MOSFET (Metal Oxide) 300 V 14A (Tc) 10V 290mOhm @ 7A, 10V 5V @ 250µA 25 nC @ 10 V ±30V 1060 pF @ 25 V - 35W (Tc) -55°C ~ 150°C (TJ) Through Hole
IPP50R280CEXKSA1

Таблицы данных

IPP50R280CEXKSA1

IPP50R280CEXKSA1

MOSFET N-CH 500V 13A TO220-3

Infineon Technologies

3753 1.78
- +

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Tube CoolMOS™ Active N-Channel MOSFET (Metal Oxide) 500 V 13A (Tc) 13V 280mOhm @ 4.2A, 13V 3.5V @ 350µA 32.6 nC @ 10 V ±20V 773 pF @ 100 V Super Junction 92W (Tc) -55°C ~ 150°C (TJ) Through Hole
SI7430DP-T1-E3

Таблицы данных

SI7430DP-T1-E3

SI7430DP-T1-E3

MOSFET N-CH 150V 26A PPAK SO-8

Vishay Siliconix

2086 3.15
- +

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Расследования

Tape & Reel (TR),Cut Tape (CT),Digi-Reel® - Active N-Channel MOSFET (Metal Oxide) 150 V 26A (Tc) 8V, 10V 45mOhm @ 5A, 10V 4.5V @ 250µA 43 nC @ 10 V ±20V 1735 pF @ 50 V - 5.2W (Ta), 64W (Tc) -55°C ~ 150°C (TJ) Surface Mount
IRF1404STRLPBF

Таблицы данных

IRF1404STRLPBF

IRF1404STRLPBF

MOSFET N-CH 40V 162A D2PAK

Infineon Technologies

3169 3.01
- +

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Расследования

Tape & Reel (TR),Cut Tape (CT),Digi-Reel® HEXFET® Active N-Channel MOSFET (Metal Oxide) 40 V 162A (Tc) 10V 4mOhm @ 95A, 10V 4V @ 250µA 200 nC @ 10 V ±20V 7360 pF @ 25 V - 3.8W (Ta), 200W (Tc) -55°C ~ 175°C (TJ) Surface Mount
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