Таблицы данных Фотографии Производитель. Часть # Акции Цены А Packaging Series ProductStatus FETType Technology DraintoSourceVoltage(Vdss) Current-ContinuousDrain(Id)@25°C DriveVoltage(MaxRdsOnMinRdsOn) RdsOn(Max)@IdVgs Vgs(th)(Max)@Id GateCharge(Qg)(Max)@Vgs Vgs(Max) InputCapacitance(Ciss)(Max)@Vds FETFeature PowerDissipation(Max) OperatingTemperature MountingType
SUM70060E-GE3

Таблицы данных

SUM70060E-GE3

SUM70060E-GE3

MOSFET N-CH 100V 131A TO263

Vishay Siliconix

3588 2.18
- +

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Tape & Reel (TR),Cut Tape (CT) ThunderFET® Active N-Channel MOSFET (Metal Oxide) 100 V 131A (Tc) 7.5V, 10V 5.6mOhm @ 30A, 10V 4V @ 250µA 81 nC @ 10 V ±20V 3330 pF @ 50 V - 375W (Tc) -55°C ~ 175°C (TJ) Surface Mount
SPP18P06PHXKSA1

Таблицы данных

SPP18P06PHXKSA1

SPP18P06PHXKSA1

MOSFET P-CH 60V 18.7A TO220-3

Infineon Technologies

2434 1.00
- +

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Расследования

Bulk,Tube SIPMOS® Active P-Channel MOSFET (Metal Oxide) 60 V 18.7A (Ta) 10V 130mOhm @ 13.2A, 10V 4V @ 1mA 28 nC @ 10 V ±20V 860 pF @ 25 V - 81.1W (Ta) -55°C ~ 175°C (TJ) Through Hole
FCPF1300N80Z

Таблицы данных

FCPF1300N80Z

FCPF1300N80Z

MOSFET N-CH 800V 4A TO220F

onsemi

3405 1.79
- +

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Tube SuperFET® II Active N-Channel MOSFET (Metal Oxide) 800 V 4A (Tc) 10V 1.3Ohm @ 2A, 10V 4.5V @ 400µA 21 nC @ 10 V ±20V 880 pF @ 100 V - 24W (Tc) -55°C ~ 150°C (TJ) Through Hole
BUK964R4-40B,118

Таблицы данных

BUK964R4-40B,118

BUK964R4-40B,118

MOSFET N-CH 40V 75A D2PAK

Nexperia USA Inc.

18570 3.02
- +

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Tape & Reel (TR),Cut Tape (CT),Digi-Reel®,Bulk Automotive, AEC-Q101, TrenchMOS™ Active N-Channel MOSFET (Metal Oxide) 40 V 75A (Tc) 5V, 10V 4mOhm @ 25A, 10V 2V @ 1mA 64 nC @ 5 V ±15V 7124 pF @ 25 V - 254W (Tc) -55°C ~ 175°C (TJ) Surface Mount
ZVN0545A

Таблицы данных

ZVN0545A

ZVN0545A

MOSFET N-CH 450V 90MA TO92-3

Diodes Incorporated

3724 1.80
- +

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Bulk - Active N-Channel MOSFET (Metal Oxide) 450 V 90mA (Ta) 10V 50Ohm @ 100mA, 10V 3V @ 1mA - ±20V 70 pF @ 25 V - 700mW (Ta) -55°C ~ 150°C (TJ) Through Hole
STP45NF06

Таблицы данных

STP45NF06

STP45NF06

MOSFET N-CH 60V 38A TO220AB

STMicroelectronics

2406 1.80
- +

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Tube STripFET™ II Active N-Channel MOSFET (Metal Oxide) 60 V 38A (Tc) 10V 28mOhm @ 19A, 10V 4V @ 250µA 58 nC @ 10 V ±20V 980 pF @ 25 V - 80W (Tc) 175°C (TJ) Through Hole
IPP052N06L3GXKSA1

Таблицы данных

IPP052N06L3GXKSA1

IPP052N06L3GXKSA1

MOSFET N-CH 60V 80A TO220-3

Infineon Technologies

2857 1.80
- +

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Tube OptiMOS™ Active N-Channel MOSFET (Metal Oxide) 60 V 80A (Tc) 4.5V, 10V 5mOhm @ 80A, 10V 2.2V @ 58µA 50 nC @ 4.5 V ±20V 8400 pF @ 30 V - 115W (Tc) -55°C ~ 175°C (TJ) Through Hole
IRFU7440PBF

Таблицы данных

IRFU7440PBF

IRFU7440PBF

MOSFET N-CH 40V 90A IPAK

Infineon Technologies

3067 1.00
- +

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Bulk,Tube HEXFET® Active N-Channel MOSFET (Metal Oxide) 40 V 90A (Tc) 6V, 10V 2.4mOhm @ 90A, 10V 3.9V @ 100µA 134 nC @ 10 V ±20V 4610 pF @ 25 V - 140W (Tc) -55°C ~ 175°C (TJ) Through Hole
STP12N50M2

Таблицы данных

STP12N50M2

STP12N50M2

MOSFET N-CH 500V 10A TO220

STMicroelectronics

2765 1.80
- +

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Расследования

Tube MDmesh™ II Plus Active N-Channel MOSFET (Metal Oxide) 500 V 10A (Tc) 10V 380mOhm @ 5A, 10V 4V @ 250µA 15 nC @ 10 V ±25V 560 pF @ 100 V - 85W (Tc) -55°C ~ 150°C (TJ) Through Hole
IPA80R1K2P7XKSA1

Таблицы данных

IPA80R1K2P7XKSA1

IPA80R1K2P7XKSA1

MOSFET N-CH 800V 4.5A TO220

Infineon Technologies

2624 1.00
- +

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Расследования

Bulk,Tube CoolMOS™ P7 Active N-Channel MOSFET (Metal Oxide) 800 V 4.5A (Tc) 10V 1.2Ohm @ 1.7A, 10V 3.5V @ 80µA 11 nC @ 10 V ±20V 300 pF @ 500 V - 25W (Tc) -55°C ~ 150°C (TJ) Through Hole
IPA60R280P7SXKSA1

Таблицы данных

IPA60R280P7SXKSA1

IPA60R280P7SXKSA1

MOSFET N-CH 600V 12A TO220

Infineon Technologies

2826 1.00
- +

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Расследования

Bulk,Tube CoolMOS™ P7 Active N-Channel MOSFET (Metal Oxide) 600 V 12A (Tc) 10V 280mOhm @ 3.8A, 10V 4V @ 190µA 18 nC @ 10 V ±20V 761 pF @ 400 V - 24W (Tc) -40°C ~ 150°C (TJ) Through Hole
IPAN70R360P7SXKSA1

Таблицы данных

IPAN70R360P7SXKSA1

IPAN70R360P7SXKSA1

MOSFET N-CH 700V 12.5A TO220

Infineon Technologies

2256 1.80
- +

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Расследования

Tube CoolMOS™ P7 Active N-Channel MOSFET (Metal Oxide) 700 V 12.5A (Tc) 10V 360mOhm @ 3A, 10V 3.5V @ 150µA 16.4 nC @ 10 V ±16V 517 pF @ 400 V - 26.5W (Tc) -40°C ~ 150°C (TJ) Through Hole
IRF610SPBF

Таблицы данных

IRF610SPBF

IRF610SPBF

MOSFET N-CH 200V 3.3A D2PAK

Vishay Siliconix

2803 1.81
- +

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Расследования

Tube - Active N-Channel MOSFET (Metal Oxide) 200 V 3.3A (Tc) 10V 1.5Ohm @ 2A, 10V 4V @ 250µA 8.2 nC @ 10 V ±20V 140 pF @ 25 V - 3W (Ta), 36W (Tc) -55°C ~ 150°C (TJ) Surface Mount
FDBL86066-F085

Таблицы данных

FDBL86066-F085

FDBL86066-F085

MOSFET N-CH 100V 185A 8HPSOF

onsemi

3246 3.61
- +

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Расследования

Tape & Reel (TR),Cut Tape (CT),Digi-Reel® PowerTrench® Active N-Channel MOSFET (Metal Oxide) 100 V 185A (Tc) 10V 4.1mOhm @ 80A, 10V 4V @ 250µA 69 nC @ 10 V ±20V 3240 pF @ 50 V - 300W (Ta) -55°C ~ 175°C (TJ) Surface Mount
BSC082N10LSGATMA1

Таблицы данных

BSC082N10LSGATMA1

BSC082N10LSGATMA1

MOSFET N-CH 100V 13.8A 8TDSON

Infineon Technologies

3821 3.30
- +

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Расследования

Tape & Reel (TR),Cut Tape (CT),Digi-Reel® OptiMOS™ Not For New Designs N-Channel MOSFET (Metal Oxide) 100 V 13.8A (Ta), 100A (Tc) 4.5V, 10V 8.2mOhm @ 100A, 10V 2.4V @ 110µA 104 nC @ 10 V ±20V 7400 pF @ 50 V - 156W (Tc) -55°C ~ 150°C (TJ) Surface Mount
SPA02N80C3XKSA1

Таблицы данных

SPA02N80C3XKSA1

SPA02N80C3XKSA1

MOSFET N-CH 800V 2A TO220-FP

Infineon Technologies

3305 1.82
- +

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Расследования

Tube CoolMOS™ Not For New Designs N-Channel MOSFET (Metal Oxide) 800 V 2A (Tc) 10V 2.7Ohm @ 1.2A, 10V 3.9V @ 120µA 16 nC @ 10 V ±20V 290 pF @ 100 V - 30.5W (Tc) -55°C ~ 150°C (TJ) Through Hole
IRFIZ44NPBF

Таблицы данных

IRFIZ44NPBF

IRFIZ44NPBF

MOSFET N-CH 55V 31A TO220AB FP

Infineon Technologies

3368 1.83
- +

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Tube HEXFET® Active N-Channel MOSFET (Metal Oxide) 55 V 31A (Tc) 10V 24mOhm @ 17A, 10V 4V @ 250µA 65 nC @ 10 V ±20V 1300 pF @ 25 V - 45W (Tc) -55°C ~ 175°C (TJ) Through Hole
STB85NF55T4

Таблицы данных

STB85NF55T4

STB85NF55T4

MOSFET N-CH 55V 80A D2PAK

STMicroelectronics

3379 3.06
- +

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Расследования

Tape & Reel (TR),Cut Tape (CT),Digi-Reel® STripFET™ II Active N-Channel MOSFET (Metal Oxide) 55 V 80A (Tc) 10V 8mOhm @ 40A, 10V 4V @ 250µA 150 nC @ 10 V ±20V 3700 pF @ 25 V - 300W (Tc) -55°C ~ 175°C (TJ) Surface Mount
TK3R1A04PL,S4X

Таблицы данных

TK3R1A04PL,S4X

TK3R1A04PL,S4X

MOSFET N-CH 40V 82A TO220SIS

Toshiba Semiconductor and Storage

2788 1.33
- +

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Расследования

Tube U-MOSIX-H Active N-Channel MOSFET (Metal Oxide) 40 V 82A (Tc) 4.5V, 10V 3.8mOhm @ 30A, 4.5V 2.4V @ 500µA 63.4 nC @ 10 V ±20V 4670 pF @ 20 V - 36W (Tc) 175°C (TJ) Through Hole
AUIRFR6215TRL

Таблицы данных

AUIRFR6215TRL

AUIRFR6215TRL

MOSFET P-CH 150V 13A DPAK

Infineon Technologies

3804 1.00
- +

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Расследования

Tape & Reel (TR),Cut Tape (CT),Digi-Reel®,Bulk HEXFET® Active P-Channel MOSFET (Metal Oxide) 150 V 13A (Tc) 10V 295mOhm @ 6.6A, 10V 4V @ 250µA 66 nC @ 10 V ±20V 860 pF @ 25 V - 110W (Tc) -55°C ~ 175°C (TJ) Surface Mount
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