Таблицы данных Фотографии Производитель. Часть # Акции Цены А Packaging Series ProductStatus FETType Technology DraintoSourceVoltage(Vdss) Current-ContinuousDrain(Id)@25°C DriveVoltage(MaxRdsOnMinRdsOn) RdsOn(Max)@IdVgs Vgs(th)(Max)@Id GateCharge(Qg)(Max)@Vgs Vgs(Max) InputCapacitance(Ciss)(Max)@Vds FETFeature PowerDissipation(Max) OperatingTemperature MountingType
NVMFS5C426NAFT1G

Таблицы данных

NVMFS5C426NAFT1G

NVMFS5C426NAFT1G

MOSFET N-CH 40V 41A/235A 5DFN

onsemi

2656 3.57
- +

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Расследования

Tape & Reel (TR),Cut Tape (CT),Digi-Reel® Automotive, AEC-Q101 Active N-Channel MOSFET (Metal Oxide) 40 V 41A (Ta), 235A (Tc) 10V 1.3mOhm @ 50A, 10V 3.5V @ 250µA 65 nC @ 10 V ±20V 4300 pF @ 25 V - 3.8W (Ta), 128W (Tc) -55°C ~ 175°C (TJ) Surface Mount
IPA80R1K4CEXKSA2

Таблицы данных

IPA80R1K4CEXKSA2

IPA80R1K4CEXKSA2

MOSFET N-CH 800V 3.9A TO220

Infineon Technologies

3866 1.00
- +

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Расследования

Bulk,Tube CoolMOS™ Active N-Channel MOSFET (Metal Oxide) 800 V 3.9A (Tc) 10V 1.4Ohm @ 2.3A, 10V 3.9V @ 240µA 23 nC @ 10 V ±20V 570 pF @ 100 V - 31W (Tc) -40°C ~ 150°C (TJ) Through Hole
SQM110N05-06L_GE3

Таблицы данных

SQM110N05-06L_GE3

SQM110N05-06L_GE3

MOSFET N-CH 55V 110A TO263

Vishay Siliconix

3363 3.21
- +

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Расследования

Tape & Reel (TR),Cut Tape (CT),Digi-Reel® TrenchFET® Active N-Channel MOSFET (Metal Oxide) 55 V 110A (Tc) 4.5V, 10V 6mOhm @ 30A, 10V 2.5V @ 250µA 110 nC @ 10 V ±20V 4440 pF @ 25 V - 157W (Tc) -55°C ~ 175°C (TJ) Surface Mount
SUM60N10-17-E3

Таблицы данных

SUM60N10-17-E3

SUM60N10-17-E3

MOSFET N-CH 100V 60A TO263

Vishay Siliconix

3217 3.05
- +

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Расследования

Tape & Reel (TR),Cut Tape (CT),Digi-Reel® TrenchFET® Active N-Channel MOSFET (Metal Oxide) 100 V 60A (Tc) 6V, 10V 16.5mOhm @ 30A, 10V 4V @ 250µA 100 nC @ 10 V ±20V 4300 pF @ 25 V - 3.75W (Ta), 150W (Tc) -55°C ~ 175°C (TJ) Surface Mount
R6012JNJGTL

Таблицы данных

R6012JNJGTL

R6012JNJGTL

MOSFET N-CH 600V 12A LPTS

Rohm Semiconductor

3996 3.62
- +

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Расследования

Tape & Reel (TR),Cut Tape (CT),Digi-Reel® - Active N-Channel MOSFET (Metal Oxide) 600 V 12A (Tc) 15V 390mOhm @ 6A, 15V 7V @ 2.5mA 28 nC @ 15 V ±30V 900 pF @ 100 V - 160W (Tc) -55°C ~ 150°C (TJ) Surface Mount
IRF1010EZPBF

Таблицы данных

IRF1010EZPBF

IRF1010EZPBF

MOSFET N-CH 60V 75A TO220AB

Infineon Technologies

7900 1.92
- +

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Tube HEXFET® Active N-Channel MOSFET (Metal Oxide) 60 V 75A (Tc) 10V 8.5mOhm @ 51A, 10V 4V @ 100µA 86 nC @ 10 V ±20V 2810 pF @ 25 V - 140W (Tc) -55°C ~ 175°C (TJ) Through Hole
IRFBG20PBF

Таблицы данных

IRFBG20PBF

IRFBG20PBF

MOSFET N-CH 1000V 1.4A TO220AB

Vishay Siliconix

2330 1.92
- +

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Расследования

Tube - Active N-Channel MOSFET (Metal Oxide) 1000 V 1.4A (Tc) 10V 11Ohm @ 840mA, 10V 4V @ 250µA 38 nC @ 10 V ±20V 500 pF @ 25 V - 54W (Tc) -55°C ~ 150°C (TJ) Through Hole
IRF3710ZPBF

Таблицы данных

IRF3710ZPBF

IRF3710ZPBF

MOSFET N-CH 100V 59A TO220AB

Infineon Technologies

3662 1.84
- +

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Расследования

Bulk,Tube HEXFET® Active N-Channel MOSFET (Metal Oxide) 100 V 59A (Tc) 10V 18mOhm @ 35A, 10V 4V @ 250µA 120 nC @ 10 V ±20V 2900 pF @ 25 V - 160W (Tc) -55°C ~ 175°C (TJ) Through Hole
SQM40041EL_GE3

Таблицы данных

SQM40041EL_GE3

SQM40041EL_GE3

MOSFET P-CH 40V 120A TO263

Vishay Siliconix

3319 2.94
- +

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Расследования

Tape & Reel (TR),Cut Tape (CT),Digi-Reel® Automotive, AEC-Q101, TrenchFET® Active P-Channel MOSFET (Metal Oxide) 40 V 120A (Tc) 4.5V, 10V 3.4mOhm @ 25A, 10V 2.5V @ 250µA 450 nC @ 10 V ±20V 23600 pF @ 25 V - 157W (Tc) -55°C ~ 175°C (TJ) Surface Mount
IRF540STRRPBF

Таблицы данных

IRF540STRRPBF

IRF540STRRPBF

MOSFET N-CH 100V 28A D2PAK

Vishay Siliconix

3608 3.11
- +

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Расследования

Tape & Reel (TR),Cut Tape (CT),Digi-Reel® - Active N-Channel MOSFET (Metal Oxide) 100 V 28A (Tc) 10V 77mOhm @ 17A, 10V 4V @ 250µA 72 nC @ 10 V ±20V 1700 pF @ 25 V - 3.7W (Ta), 150W (Tc) -55°C ~ 175°C (TJ) Surface Mount
CSD16415Q5

Таблицы данных

CSD16415Q5

CSD16415Q5

MOSFET N-CH 25V 100A 8VSON

Texas Instruments

1093 1.00
- +

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Tape & Reel (TR),Cut Tape (CT),Digi-Reel®,Bulk NexFET™ Active N-Channel MOSFET (Metal Oxide) 25 V 100A (Tc) 4.5V, 10V 1.15mOhm @ 40A, 10V 1.9V @ 250µA 29 nC @ 4.5 V +16V, -12V 4100 pF @ 12.5 V - 3.2W (Ta) -55°C ~ 150°C (TJ) Surface Mount
PHP28NQ15T,127

Таблицы данных

PHP28NQ15T,127

PHP28NQ15T,127

MOSFET N-CH 150V 28.5A TO220AB

Nexperia USA Inc.

2082 1.85
- +

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Tube TrenchMOS™ Active N-Channel MOSFET (Metal Oxide) 150 V 28.5A (Tj) 10V 65mOhm @ 18A, 10V 4V @ 1mA 24 nC @ 10 V ±20V 1250 pF @ 30 V - 150W (Tc) -55°C ~ 175°C (TJ) Through Hole
IPP057N06N3GXKSA1

Таблицы данных

IPP057N06N3GXKSA1

IPP057N06N3GXKSA1

MOSFET N-CH 60V 80A TO220-3

Infineon Technologies

3587 1.85
- +

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Расследования

Bulk,Tube OptiMOS™ Active N-Channel MOSFET (Metal Oxide) 60 V 80A (Tc) 10V 5.7mOhm @ 80A, 10V 4V @ 58µA 82 nC @ 10 V ±20V 6600 pF @ 30 V - 115W (Tc) -55°C ~ 175°C (TJ) Through Hole
IPA65R400CEXKSA1

Таблицы данных

IPA65R400CEXKSA1

IPA65R400CEXKSA1

MOSFET N-CH 650V TO220

Infineon Technologies

3691 1.85
- +

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Tube CoolMOS™ Active N-Channel MOSFET (Metal Oxide) 650 V 15.1A (Tc) 10V 400mOhm @ 3.2A, 10V 3.5V @ 320µA 39 nC @ 10 V ±20V 710 pF @ 100 V Super Junction 31W (Tc) -55°C ~ 150°C (TJ) Through Hole
IRLR110PBF

Таблицы данных

IRLR110PBF

IRLR110PBF

MOSFET N-CH 100V 4.3A DPAK

Vishay Siliconix

1999 1.35
- +

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Tube - Active N-Channel MOSFET (Metal Oxide) 100 V 4.3A (Tc) 4V, 5V 540mOhm @ 2.6A, 5V 2V @ 250µA 6.1 nC @ 5 V ±10V 250 pF @ 25 V - 2.5W (Ta), 25W (Tc) -55°C ~ 150°C (TJ) Surface Mount
NVD5C434NT4G

Таблицы данных

NVD5C434NT4G

NVD5C434NT4G

MOSFET N-CHANNEL 40V 163A DPAK

onsemi

3692 3.70
- +

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Расследования

Tape & Reel (TR),Cut Tape (CT),Digi-Reel® Automotive, AEC-Q101 Active N-Channel MOSFET (Metal Oxide) 40 V 163A (Tc) 10V 2.1mOhm @ 50A, 10V 4V @ 250µA 80.6 nC @ 10 V ±20V 5400 pF @ 25 V - 117W (Tc) -55°C ~ 175°C (TJ) Surface Mount
STD6N95K5

Таблицы данных

STD6N95K5

STD6N95K5

MOSFET N-CH 950V 9A DPAK

STMicroelectronics

3386 3.10
- +

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Расследования

Tape & Reel (TR),Cut Tape (CT),Digi-Reel® SuperMESH5™ Active N-Channel MOSFET (Metal Oxide) 950 V 9A (Tc) 10V 1.25Ohm @ 3A, 10V 5V @ 100µA 13 nC @ 10 V ±30V 450 pF @ 100 V - 90W (Tc) -55°C ~ 150°C (TJ) Surface Mount
SI4442DY-T1-E3

Таблицы данных

SI4442DY-T1-E3

SI4442DY-T1-E3

MOSFET N-CH 30V 15A 8SO

Vishay Siliconix

3853 3.29
- +

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Расследования

Tape & Reel (TR),Cut Tape (CT),Digi-Reel® TrenchFET® Active N-Channel MOSFET (Metal Oxide) 30 V 15A (Ta) 2.5V, 10V 4.5mOhm @ 22A, 10V 1.5V @ 250µA 50 nC @ 4.5 V ±12V - - 1.6W (Ta) -55°C ~ 150°C (TJ) Surface Mount
TPH4R50ANH,L1Q

Таблицы данных

TPH4R50ANH,L1Q

TPH4R50ANH,L1Q

MOSFET N CH 100V 60A SOP ADV

Toshiba Semiconductor and Storage

3109 2.95
- +

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Расследования

Tape & Reel (TR),Cut Tape (CT),Digi-Reel® U-MOSVIII-H Active N-Channel MOSFET (Metal Oxide) 100 V 60A (Tc) 10V 4.5mOhm @ 30A, 10V 4V @ 1mA 58 nC @ 10 V ±20V 5200 pF @ 50 V - 1.6W (Ta), 78W (Tc) 150°C (TJ) Surface Mount
BSC079N10NSGATMA1

Таблицы данных

BSC079N10NSGATMA1

BSC079N10NSGATMA1

MOSFET N-CH 100V 13.4A 8TDSON

Infineon Technologies

3984 3.41
- +

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Расследования

Tape & Reel (TR),Cut Tape (CT),Digi-Reel® OptiMOS™ Not For New Designs N-Channel MOSFET (Metal Oxide) 100 V 13.4A (Ta), 100A (Tc) 10V 7.9mOhm @ 50A, 10V 4V @ 110µA 87 nC @ 10 V ±20V 5900 pF @ 50 V - 156W (Tc) -55°C ~ 150°C (TJ) Surface Mount
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