Таблицы данных Фотографии Производитель. Часть # Акции Цены А Packaging Series ProductStatus FETType Technology DraintoSourceVoltage(Vdss) Current-ContinuousDrain(Id)@25°C DriveVoltage(MaxRdsOnMinRdsOn) RdsOn(Max)@IdVgs Vgs(th)(Max)@Id GateCharge(Qg)(Max)@Vgs Vgs(Max) InputCapacitance(Ciss)(Max)@Vds FETFeature PowerDissipation(Max) OperatingTemperature MountingType
FQU2N60CTU

Таблицы данных

FQU2N60CTU

FQU2N60CTU

MOSFET N-CH 600V 1.9A IPAK

onsemi

10080 1.10
- +

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Tube QFET® Last Time Buy N-Channel MOSFET (Metal Oxide) 600 V 1.9A (Tc) 10V 4.7Ohm @ 950mA, 10V 4V @ 250µA 12 nC @ 10 V ±30V 235 pF @ 25 V - 2.5W (Ta), 44W (Tc) -55°C ~ 150°C (TJ) Through Hole
FCMT180N65S3

Таблицы данных

FCMT180N65S3

FCMT180N65S3

MOSFET N-CH 650V 17A POWER88

onsemi

3751 3.05
- +

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Tape & Reel (TR),Cut Tape (CT),Digi-Reel® SuperFET® III Active N-Channel MOSFET (Metal Oxide) 650 V 17A (Tc) 10V 180mOhm @ 8.5A, 10V 4.5V @ 1.8mA 33 nC @ 10 V ±30V 1350 pF @ 400 V - 139W (Tc) -55°C ~ 150°C (TJ) Surface Mount
FDS86140

Таблицы данных

FDS86140

FDS86140

MOSFET N-CH 100V 11.2A 8SOIC

onsemi

3967 3.06
- +

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Tape & Reel (TR),Cut Tape (CT),Digi-Reel®,Bulk PowerTrench® Active N-Channel MOSFET (Metal Oxide) 100 V 11.2A (Ta) 6V, 10V 9.8mOhm @ 11.2A, 10V 4V @ 250µA 41 nC @ 10 V ±20V 2580 pF @ 50 V - 2.5W (Ta), 5W (Tc) -55°C ~ 150°C (TJ) Surface Mount
SQM100N02-3M5L_GE3

Таблицы данных

SQM100N02-3M5L_GE3

SQM100N02-3M5L_GE3

MOSFET N-CH 20V 100A TO263

Vishay Siliconix

2582 2.59
- +

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Расследования

Tape & Reel (TR),Cut Tape (CT),Digi-Reel® Automotive, AEC-Q101, TrenchFET® Active N-Channel MOSFET (Metal Oxide) 20 V 100A (Tc) 4.5V, 10V 3.5mOhm @ 30A, 10V 2.5V @ 250µA 110 nC @ 10 V ±20V 5500 pF @ 10 V - 150W (Tc) -55°C ~ 175°C (TJ) Surface Mount
FQP13N06L

Таблицы данных

FQP13N06L

FQP13N06L

MOSFET N-CH 60V 13.6A TO220-3

onsemi

3008 1.11
- +

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Tube QFET® Last Time Buy N-Channel MOSFET (Metal Oxide) 60 V 13.6A (Tc) 5V, 10V 110mOhm @ 6.8A, 10V 2.5V @ 250µA 6.4 nC @ 5 V ±20V 350 pF @ 25 V - 45W (Tc) -55°C ~ 175°C (TJ) Through Hole
IRFR010PBF

Таблицы данных

IRFR010PBF

IRFR010PBF

MOSFET N-CH 50V 8.2A DPAK

Vishay Siliconix

3296 1.54
- +

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Tube - Active N-Channel MOSFET (Metal Oxide) 50 V 8.2A (Tc) 10V 200mOhm @ 4.6A, 10V 4V @ 250µA 10 nC @ 10 V ±20V 250 pF @ 25 V - 25W (Tc) -55°C ~ 150°C (TJ) Surface Mount
FDMC012N03

Таблицы данных

FDMC012N03

FDMC012N03

MOSFET N-CH 30V 35A/185A POWER33

onsemi

3000 1.00
- +

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Tape & Reel (TR),Cut Tape (CT),Digi-Reel®,Bulk PowerTrench® Active N-Channel MOSFET (Metal Oxide) 30 V 35A (Ta), 185A (Tc) 4.5V, 10V 1.23mOhm @ 35A, 10V 2V @ 250µA 110 nC @ 10 V ±12V 8183 pF @ 15 V - 2.3W (Ta), 64W (Tc) -55°C ~ 150°C (TJ) Surface Mount
SI7450DP-T1-E3

Таблицы данных

SI7450DP-T1-E3

SI7450DP-T1-E3

MOSFET N-CH 200V 3.2A PPAK SO-8

Vishay Siliconix

3455 3.03
- +

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Расследования

Tape & Reel (TR),Cut Tape (CT),Digi-Reel® TrenchFET® Active N-Channel MOSFET (Metal Oxide) 200 V 3.2A (Ta) 6V, 10V 80mOhm @ 4A, 10V 4.5V @ 250µA 42 nC @ 10 V ±20V - - 1.9W (Ta) -55°C ~ 150°C (TJ) Surface Mount
FDPF18N20FT

Таблицы данных

FDPF18N20FT

FDPF18N20FT

MOSFET N-CH 200V 18A TO220F

onsemi

3385 1.55
- +

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Bulk,Tube UniFET™ Active N-Channel MOSFET (Metal Oxide) 200 V 18A (Tc) 10V 140mOhm @ 9A, 10V 5V @ 250µA 26 nC @ 10 V ±30V 1180 pF @ 25 V - 41W (Tc) -55°C ~ 150°C (TJ) Through Hole
IAUC120N04S6L008ATMA1

Таблицы данных

IAUC120N04S6L008ATMA1

IAUC120N04S6L008ATMA1

MOSFET N-CH 40V 120A 8TDSON-33

Infineon Technologies

2563 3.14
- +

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Расследования

Tape & Reel (TR),Cut Tape (CT),Digi-Reel® Automotive, AEC-Q101, OptiMOS™ Active N-Channel MOSFET (Metal Oxide) 40 V 120A (Tc) 4.5V, 10V 0.8mOhm @ 60A, 10V 2V @ 90µA 140 nC @ 10 V ±16V 7910 pF @ 25 V - 150W (Tc) -55°C ~ 175°C (TJ) Surface Mount
IPD068N10N3GATMA1

Таблицы данных

IPD068N10N3GATMA1

IPD068N10N3GATMA1

MOSFET N-CH 100V 90A TO252-3

Infineon Technologies

2657 3.14
- +

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Расследования

Tape & Reel (TR),Cut Tape (CT),Digi-Reel® OptiMOS™ Active N-Channel MOSFET (Metal Oxide) 100 V 90A (Tc) 6V, 10V 6.8mOhm @ 90A, 10V 3.5V @ 90µA 68 nC @ 10 V ±20V 4910 pF @ 50 V - 150W (Tc) -55°C ~ 175°C (TJ) Surface Mount
RCJ220N25TL

Таблицы данных

RCJ220N25TL

RCJ220N25TL

MOSFET N-CH 250V 22A LPTS

Rohm Semiconductor

3599 3.16
- +

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Расследования

Tape & Reel (TR),Cut Tape (CT),Digi-Reel® - Active N-Channel MOSFET (Metal Oxide) 250 V 22A (Tc) 10V 140mOhm @ 11A, 10V 5V @ 1mA 60 nC @ 10 V ±30V 3200 pF @ 25 V - 1.56W (Ta), 40W (Tc) 150°C (TJ) Surface Mount
VN2460N3-G

Таблицы данных

VN2460N3-G

VN2460N3-G

MOSFET N-CH 600V 160MA TO92-3

Microchip Technology

3685 1.56
- +

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Bag - Active N-Channel MOSFET (Metal Oxide) 600 V 160mA (Tj) 4.5V, 10V 20Ohm @ 100mA, 10V 4V @ 2mA - ±20V 150 pF @ 25 V - 1W (Ta) -55°C ~ 150°C (TJ) Through Hole
IRF740BPBF

Таблицы данных

IRF740BPBF

IRF740BPBF

MOSFET N-CH 400V 10A TO220AB

Vishay Siliconix

2023 1.56
- +

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Tube - Active N-Channel MOSFET (Metal Oxide) 400 V 10A (Tc) 10V 600mOhm @ 5A, 10V 5V @ 250µA 30 nC @ 10 V ±30V 526 pF @ 100 V - 147W (Tc) -55°C ~ 150°C (TJ) Through Hole
IPB067N08N3GATMA1

Таблицы данных

IPB067N08N3GATMA1

IPB067N08N3GATMA1

MOSFET N-CH 80V 80A D2PAK

Infineon Technologies

3320 3.18
- +

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Tape & Reel (TR),Cut Tape (CT),Digi-Reel® OptiMOS™ Active N-Channel MOSFET (Metal Oxide) 80 V 80A (Tc) 6V, 10V 6.7mOhm @ 73A, 10V 3.5V @ 73µA 56 nC @ 10 V ±20V 3840 pF @ 40 V - 136W (Tc) -55°C ~ 175°C (TJ) Surface Mount
IPP180N10N3GXKSA1

Таблицы данных

IPP180N10N3GXKSA1

IPP180N10N3GXKSA1

MOSFET N-CH 100V 43A TO220-3

Infineon Technologies

2529 1.57
- +

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Tube OptiMOS™ Active N-Channel MOSFET (Metal Oxide) 100 V 43A (Tc) 6V, 10V 18mOhm @ 33A, 10V 3.5V @ 33µA 25 nC @ 10 V ±20V 1800 pF @ 50 V - 71W (Tc) -55°C ~ 175°C (TJ) Through Hole
IPAN70R450P7SXKSA1

Таблицы данных

IPAN70R450P7SXKSA1

IPAN70R450P7SXKSA1

MOSFET N-CH 700V 10A TO220

Infineon Technologies

2683 1.00
- +

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Расследования

Bulk,Tube CoolMOS™ P7 Active N-Channel MOSFET (Metal Oxide) 700 V 10A (Tc) 10V 450mOhm @ 2.3A, 10V 3.5V @ 120µA 13.1 nC @ 10 V ±16V 424 pF @ 400 V - 22.7W (Tc) -40°C ~ 150°C (TJ) Through Hole
VP3203N8-G

Таблицы данных

VP3203N8-G

VP3203N8-G

MOSFET P-CH 30V 1.1A TO243AA

Microchip Technology

3831 2.08
- +

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Расследования

Tape & Reel (TR),Cut Tape (CT),Digi-Reel® - Active P-Channel MOSFET (Metal Oxide) 30 V 1.1A (Tj) 4.5V, 10V 600mOhm @ 1.5A, 10V 3.5V @ 10mA - ±20V 300 pF @ 25 V - 1.6W (Ta) -55°C ~ 150°C (TJ) Surface Mount
IPD90N10S4L06ATMA1

Таблицы данных

IPD90N10S4L06ATMA1

IPD90N10S4L06ATMA1

MOSFET N-CH 100V 90A TO252-3

Infineon Technologies

3106 3.18
- +

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Расследования

Tape & Reel (TR),Cut Tape (CT),Digi-Reel® Automotive, AEC-Q101, OptiMOS™ Active N-Channel MOSFET (Metal Oxide) 100 V 90A (Tc) 4.5V, 10V 6.6mOhm @ 90A, 10V 2.1V @ 90µA 98 nC @ 10 V ±16V 6250 pF @ 25 V - 136W (Tc) -55°C ~ 175°C (TJ) Surface Mount
NVMFS6H824NLT1G

Таблицы данных

NVMFS6H824NLT1G

NVMFS6H824NLT1G

MOSFET N-CH 80V 20A/110A 5DFN

onsemi

2034 3.00
- +

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Расследования

Tape & Reel (TR),Cut Tape (CT),Digi-Reel® Automotive, AEC-Q101 Active N-Channel MOSFET (Metal Oxide) 80 V 20A (Ta), 110A (Tc) 4.5V, 10V 4mOhm @ 20A, 10V 2V @ 140µA 52 nC @ 10 V ±20V 2900 pF @ 40 V - 3.8W (Ta), 116W (Tc) -55°C ~ 175°C (TJ) Surface Mount
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