Грузовой вагон ( )| Таблицы данных | Фотографии | Производитель. Часть # | Акции | Цены | А | Packaging | Series | ProductStatus | FETType | Technology | DraintoSourceVoltage(Vdss) | Current-ContinuousDrain(Id)@25°C | DriveVoltage(MaxRdsOnMinRdsOn) | RdsOn(Max)@IdVgs | Vgs(th)(Max)@Id | GateCharge(Qg)(Max)@Vgs | Vgs(Max) | InputCapacitance(Ciss)(Max)@Vds | FETFeature | PowerDissipation(Max) | OperatingTemperature | MountingType |
|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|
Таблицы данных |
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IXTH10P50PMOSFET P-CH 500V 10A TO247 |
128 | 8.31 |
ДобавитьРасследования |
Tube | PolarP™ | Active | P-Channel | MOSFET (Metal Oxide) | 500 V | 10A (Tc) | 10V | 1Ohm @ 5A, 10V | 4V @ 250µA | 50 nC @ 10 V | ±20V | 2840 pF @ 25 V | - | 300W (Tc) | -55°C ~ 150°C (TJ) | Through Hole |
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Таблицы данных |
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IPW60R024CFD7XKSA1MOSFET N-CH 650V 77A TO247-3-41 |
2706 | 19.72 |
ДобавитьРасследования |
Tube | CoolMOS™ CFD7 | Active | N-Channel | MOSFET (Metal Oxide) | 650 V | 77A (Tc) | 10V | 24mOhm @ 42.4A, 10V | 4.5V @ 2.12mA | 183 nC @ 10 V | ±20V | 7268 pF @ 400 V | - | 320W (Tc) | -55°C ~ 150°C (TJ) | Through Hole |
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Таблицы данных |
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IXTH40N50L2MOSFET N-CH 500V 40A TO247 |
3620 | 19.77 |
ДобавитьРасследования |
Tube | Linear L2™ | Active | N-Channel | MOSFET (Metal Oxide) | 500 V | 40A (Tc) | 10V | 170mOhm @ 20A, 10V | 4.5V @ 250µA | 320 nC @ 10 V | ±20V | 10400 pF @ 25 V | - | 540W (Tc) | -55°C ~ 150°C (TJ) | Through Hole |
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Таблицы данных |
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G2R1000MT33JSIC MOSFET N-CH 4A TO263-7 |
3983 | 19.82 |
ДобавитьРасследования |
Tube | G2R™ | Active | N-Channel | SiCFET (Silicon Carbide) | 3300 V | 4A (Tc) | 20V | 1.2Ohm @ 2A, 20V | 3.5V @ 2mA | 21 nC @ 20 V | +20V, -5V | 238 pF @ 1000 V | - | 74W (Tc) | -55°C ~ 175°C (TJ) | Surface Mount |
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Таблицы данных |
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IXTA1N170DHVMOSFET N-CH 1700V 1A TO263 |
3056 | 19.90 |
ДобавитьРасследования |
Tube | Depletion | Active | N-Channel | MOSFET (Metal Oxide) | 1700 V | 1A (Tc) | 10V | 16Ohm @ 500mA, 0V | - | 47 nC @ 5 V | ±20V | 3090 pF @ 25 V | Depletion Mode | 290W (Tc) | -55°C ~ 150°C (TJ) | Surface Mount |
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Таблицы данных |
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IXFH170N25X3MOSFET N-CH 250V 170A TO247 |
3330 | 20.67 |
ДобавитьРасследования |
Tube | HiPerFET™, Ultra X3 | Active | N-Channel | MOSFET (Metal Oxide) | 250 V | 170A (Tc) | 10V | 7.4mOhm @ 85A, 10V | 4.5V @ 4mA | 190 nC @ 10 V | ±20V | 13500 pF @ 25 V | - | 960W (Tc) | -55°C ~ 150°C (TJ) | Through Hole |
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Таблицы данных |
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GA10JT12-263TRANS SJT 1200V 25A |
3481 | 20.74 |
ДобавитьРасследования |
Tube | - | Active | - | SiC (Silicon Carbide Junction Transistor) | 1200 V | 25A (Tc) | - | 120mOhm @ 10A | - | - | - | 1403 pF @ 800 V | - | 170W (Tc) | 175°C (TJ) | Surface Mount |
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Таблицы данных |
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SCT30N120HSICFET N-CH 1200V 40A H2PAK-2 |
3417 | 24.51 |
ДобавитьРасследования |
Tape & Reel (TR),Cut Tape (CT),Digi-Reel® | - | Active | N-Channel | SiCFET (Silicon Carbide) | 1200 V | 40A (Tc) | 20V | 100mOhm @ 20A, 20V | 3.5V @ 1mA | 105 nC @ 20 V | +25V, -10V | 1700 pF @ 400 V | - | 270W (Tc) | -55°C ~ 200°C (TJ) | Surface Mount |
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Таблицы данных |
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NTHL040N120SC1SICFET N-CH 1200V 60A TO247-3 |
2643 | 1.00 |
ДобавитьРасследования |
Bulk,Tube | - | Active | N-Channel | SiCFET (Silicon Carbide) | 1200 V | 60A (Tc) | 20V | 56mOhm @ 35A, 20V | 4.3V @ 10mA | 106 nC @ 20 V | +25V, -15V | 1781 pF @ 800 V | - | 348W (Tc) | -55°C ~ 175°C (TJ) | Through Hole |
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Таблицы данных |
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IXTT30N60L2MOSFET N-CH 600V 30A TO268 |
2963 | 21.05 |
ДобавитьРасследования |
Tube | Linear L2™ | Active | N-Channel | MOSFET (Metal Oxide) | 600 V | 30A (Tc) | 10V | 240mOhm @ 15A, 10V | 4.5V @ 250µA | 335 nC @ 10 V | ±20V | 10700 pF @ 25 V | - | 540W (Tc) | -55°C ~ 150°C (TJ) | Surface Mount |
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Таблицы данных |
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IXFH220N20X3MOSFET N-CH 200V 220A TO247 |
2886 | 21.63 |
ДобавитьРасследования |
Tube | HiPerFET™, Ultra X3 | Active | N-Channel | MOSFET (Metal Oxide) | 200 V | 220A (Tc) | 10V | 6.2mOhm @ 110A, 10V | 4.5V @ 4mA | 204 nC @ 10 V | ±20V | 13600 pF @ 25 V | - | 960W (Tc) | -55°C ~ 150°C (TJ) | Through Hole |
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Таблицы данных |
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IXFX64N60PMOSFET N-CH 600V 64A PLUS247-3 |
3542 | 21.86 |
ДобавитьРасследования |
Tube | HiPerFET™, Polar | Active | N-Channel | MOSFET (Metal Oxide) | 600 V | 64A (Tc) | 10V | 96mOhm @ 500mA, 10V | 5V @ 8mA | 200 nC @ 10 V | ±30V | 12000 pF @ 25 V | - | 1040W (Tc) | -55°C ~ 150°C (TJ) | Through Hole |
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Таблицы данных |
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IXFH32N100XMOSFET N-CH 1000V 32A TO247 |
3051 | 21.96 |
ДобавитьРасследования |
Tube | HiPerFET™, Ultra X | Active | N-Channel | MOSFET (Metal Oxide) | 1000 V | 32A (Tc) | 10V | 220mOhm @ 16A, 10V | 6V @ 4mA | 130 nC @ 10 V | ±30V | 4075 pF @ 25 V | - | 890W (Tc) | -55°C ~ 150°C (TJ) | Through Hole |
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Таблицы данных |
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IXFH120N15PMOSFET N-CH 150V 120A TO247AD |
2628 | 9.80 |
ДобавитьРасследования |
Box | HiPerFET™, Polar | Active | N-Channel | MOSFET (Metal Oxide) | 150 V | 120A (Tc) | 10V | 16mOhm @ 500mA, 10V | 5V @ 4mA | 150 nC @ 10 V | ±20V | 4900 pF @ 25 V | - | 600W (Tc) | -55°C ~ 175°C (TJ) | Through Hole |
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Таблицы данных |
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IXTK40P50PMOSFET P-CH 500V 40A TO264 |
3990 | 22.82 |
ДобавитьРасследования |
Tube | PolarP™ | Active | P-Channel | MOSFET (Metal Oxide) | 500 V | 40A (Tc) | 10V | 230mOhm @ 20A, 10V | 4V @ 1mA | 205 nC @ 10 V | ±20V | 11500 pF @ 25 V | - | 890W (Tc) | -55°C ~ 150°C (TJ) | Through Hole |
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Таблицы данных |
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IXFT150N30X3HVMOSFET N-CH 300V 150A TO268HV |
2064 | 22.82 |
ДобавитьРасследования |
Tube | HiPerFET™, Ultra X3 | Active | N-Channel | MOSFET (Metal Oxide) | 300 V | 150A (Tc) | 10V | 8.3mOhm @ 75A, 10V | 4.5V @ 4mA | 254 nC @ 10 V | ±20V | 13100 pF @ 25 V | - | 890W (Tc) | -55°C ~ 150°C (TJ) | Surface Mount |
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Таблицы данных |
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C2M0080120DSICFET N-CH 1200V 36A TO247-3 |
809 | 24.12 |
ДобавитьРасследования |
Bulk | C2M™ | Not For New Designs | N-Channel | SiCFET (Silicon Carbide) | 1200 V | 36A (Tc) | 20V | 98mOhm @ 20A, 20V | 4V @ 5mA | 62 nC @ 5 V | +25V, -10V | 950 pF @ 1000 V | - | 192W (Tc) | -55°C ~ 150°C (TJ) | Through Hole |
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Таблицы данных |
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AIMW120R035M1HXKSA11200V COOLSIC MOSFET PG-TO247-3 |
2348 | 24.22 |
ДобавитьРасследования |
Tube | Automotive, AEC-Q101, CoolSiC™ | Active | N-Channel | SiCFET (Silicon Carbide) | 1200 V | 52A (Tc) | 18V | 46mOhm @ 25A, 18V | 5.7V @ 10mA | 59 nC @ 18 V | +23V, -7V | 2130 pF @ 800 V | - | 228W (Tc) | -55°C ~ 175°C (TJ) | Through Hole |
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Таблицы данных |
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IXFX120N65X2MOSFET N-CH 650V 120A PLUS247-3 |
3551 | 24.34 |
ДобавитьРасследования |
Tube | HiPerFET™, Ultra X2 | Active | N-Channel | MOSFET (Metal Oxide) | 650 V | 120A (Tc) | 10V | 24mOhm @ 60A, 10V | 5.5V @ 8mA | 225 nC @ 10 V | ±30V | 15500 pF @ 25 V | - | 1250W (Tc) | -55°C ~ 150°C (TJ) | Through Hole |
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Таблицы данных |
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MSC040SMA120BSICFET N-CH 1200V 66A TO247-3 |
3366 | 25.87 |
ДобавитьРасследования |
Tube | - | Active | N-Channel | SiCFET (Silicon Carbide) | 1200 V | 66A (Tc) | 20V | 50mOhm @ 40A, 20V | 2.7V @ 2mA | 137 nC @ 20 V | +23V, -10V | 1990 pF @ 1000 V | - | 323W (Tc) | -55°C ~ 175°C (TJ) | Through Hole |
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