Грузовой вагон ( )| Таблицы данных | Фотографии | Производитель. Часть # | Акции | Цены | А | Packaging | Series | ProductStatus | FETType | Technology | DraintoSourceVoltage(Vdss) | Current-ContinuousDrain(Id)@25°C | DriveVoltage(MaxRdsOnMinRdsOn) | RdsOn(Max)@IdVgs | Vgs(th)(Max)@Id | GateCharge(Qg)(Max)@Vgs | Vgs(Max) | InputCapacitance(Ciss)(Max)@Vds | FETFeature | PowerDissipation(Max) | OperatingTemperature | MountingType |
|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|
Таблицы данных |
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MSC035SMA170B4MOSFET SIC 1700V 35 MOHM TO-247- |
2620 | 43.01 |
ДобавитьРасследования |
Bulk | - | Active | N-Channel | SiCFET (Silicon Carbide) | 1700 V | 68A (Tc) | 20V | 45mOhm @ 30A, 20V | 3.25V @ 2.5mA (Typ) | 178 nC @ 20 V | +23V, -10V | 3300 pF @ 1000 V | - | 370W (Tc) | -55°C ~ 175°C (TJ) | Through Hole |
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Таблицы данных |
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MSC035SMA170BTRANS SJT 1700V TO247 |
3268 | 43.33 |
ДобавитьРасследования |
Tube | - | Active | N-Channel | SiCFET (Silicon Carbide) | 1700 V | 68A (Tc) | 20V | 45mOhm @ 30A, 20V | 3.25V @ 2.5mA (Typ) | 178 nC @ 20 V | +23V, -10V | 3300 pF @ 1000 V | - | 370W (Tc) | -60°C ~ 175°C (TJ) | Through Hole |
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APT40M70JVRMOSFET N-CH 400V 53A SOT227 |
3908 | 45.61 |
ДобавитьРасследования |
Tube | POWER MOS V® | Active | N-Channel | MOSFET (Metal Oxide) | 400 V | 53A (Tc) | 10V | 70mOhm @ 26.5A, 10V | 4V @ 2.5mA | 495 nC @ 10 V | ±30V | 8890 pF @ 25 V | - | 450W (Tc) | -55°C ~ 150°C (TJ) | Chassis Mount |
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Таблицы данных |
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IXTK46N50LMOSFET N-CH 500V 46A TO264 |
3404 | 45.73 |
ДобавитьРасследования |
Tube | Linear | Active | N-Channel | MOSFET (Metal Oxide) | 500 V | 46A (Tc) | 20V | 160mOhm @ 500mA, 20V | 6V @ 250µA | 260 nC @ 15 V | ±30V | 7000 pF @ 25 V | - | 700W (Tc) | -55°C ~ 150°C (TJ) | Through Hole |
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Таблицы данных |
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IXFN210N20PMOSFET N-CH 200V 188A SOT-227B |
3298 | 45.94 |
ДобавитьРасследования |
Tube | HiPerFET™, Polar | Active | N-Channel | MOSFET (Metal Oxide) | 200 V | 188A (Tc) | 10V | 10.5mOhm @ 105A, 10V | 4.5V @ 8mA | 255 nC @ 10 V | ±20V | 18600 pF @ 25 V | - | 1070W (Tc) | -55°C ~ 175°C (TJ) | Chassis Mount |
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Таблицы данных |
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IXFN400N15X3MOSFET N-CH 150V 400A SOT227B |
2504 | 47.21 |
ДобавитьРасследования |
Tube | HiPerFET™, Ultra X3 | Active | N-Channel | MOSFET (Metal Oxide) | 150 V | 400A (Tc) | 10V | 2.5mOhm @ 200A, 10V | 4.5V @ 8mA | 365 nC @ 10 V | ±20V | 23700 pF @ 25 V | - | 695W (Tc) | -55°C ~ 150°C (TJ) | Chassis Mount |
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Таблицы данных |
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NVHL020N120SC1SICFET N-CH 1200V 103A TO247-3 |
2275 | 47.83 |
ДобавитьРасследования |
Tube | Automotive, AEC-Q101 | Active | N-Channel | SiCFET (Silicon Carbide) | 1200 V | 103A (Tc) | 20V | 28mOhm @ 60A, 20V | 4.3V @ 20mA | 203 nC @ 20 V | +25V, -15V | 2890 pF @ 800 V | - | 535W (Tc) | -55°C ~ 175°C (TJ) | Through Hole |
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Таблицы данных |
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IXFB30N120PMOSFET N-CH 1200V 30A PLUS264 |
3482 | 47.89 |
ДобавитьРасследования |
Tube | HiPerFET™, Polar | Active | N-Channel | MOSFET (Metal Oxide) | 1200 V | 30A (Tc) | 10V | 350mOhm @ 500mA, 10V | 6.5V @ 1mA | 310 nC @ 10 V | ±20V | 22500 pF @ 25 V | - | 1250W (Tc) | -55°C ~ 150°C (TJ) | Through Hole |
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Таблицы данных |
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IXTN400N15X4MOSFET N-CH 150V 400A SOT227B |
2585 | 48.50 |
ДобавитьРасследования |
Tube | Ultra X4 | Active | N-Channel | MOSFET (Metal Oxide) | 150 V | 400A (Tc) | 10V | 2.7mOhm @ 100A, 10V | 4.5V @ 1mA | 430 nC @ 10 V | ±20V | 14500 pF @ 25 V | - | 1070W (Tc) | -55°C ~ 175°C (TJ) | Chassis Mount |
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Таблицы данных |
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IXFN170N65X2MOSFET N-CH 650V 170A SOT227B |
2480 | 51.95 |
ДобавитьРасследования |
Tube | HiPerFET™, Ultra X2 | Active | N-Channel | MOSFET (Metal Oxide) | 650 V | 170A (Tc) | 10V | 13mOhm @ 85A, 10V | 5V @ 8mA | 434 nC @ 10 V | ±30V | 27000 pF @ 25 V | - | 1170W (Tc) | -55°C ~ 150°C (TJ) | Chassis Mount |
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Таблицы данных |
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STE145N65M5MOSFET N-CH 650V 143A ISOTOP |
2646 | 55.61 |
ДобавитьРасследования |
Tube | MDmesh™ V | Active | N-Channel | MOSFET (Metal Oxide) | 650 V | 143A (Tc) | 10V | 15mOhm @ 69A, 10V | 5V @ 250µA | 414 nC @ 10 V | ±25V | 18500 pF @ 100 V | - | 679W (Tc) | 150°C (TJ) | Chassis Mount |
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Таблицы данных |
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APT41F100JMOSFET N-CH 1000V 42A ISOTOP |
3790 | 67.50 |
ДобавитьРасследования |
Tube | - | Active | N-Channel | MOSFET (Metal Oxide) | 1000 V | 42A (Tc) | 10V | 210mOhm @ 33A, 10V | 5V @ 5mA | 570 nC @ 10 V | ±30V | 18500 pF @ 25 V | - | 960W (Tc) | -55°C ~ 150°C (TJ) | Chassis Mount |
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Таблицы данных |
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APT29F100B2MOSFET N-CH 1000V 30A T-MAX |
3011 | 19.70 |
ДобавитьРасследования |
Tube | POWER MOS 8™ | Active | N-Channel | MOSFET (Metal Oxide) | 1000 V | 30A (Tc) | 10V | 440mOhm @ 16A, 10V | 5V @ 2.5mA | 260 nC @ 10 V | ±30V | 8500 pF @ 25 V | - | 1040W (Tc) | -55°C ~ 150°C (TJ) | Through Hole |
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Таблицы данных |
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IXTF1N450MOSFET N-CH 4500V 900MA I4PAC |
3684 | 99.34 |
ДобавитьРасследования |
Tube | - | Active | N-Channel | MOSFET (Metal Oxide) | 4500 V | 900mA (Tc) | 10V | 85Ohm @ 50mA, 10V | 6.5V @ 250µA | 40 nC @ 10 V | ±20V | 1730 pF @ 25 V | - | 160W (Tc) | -55°C ~ 150°C (TJ) | Through Hole |
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Таблицы данных |
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C2M0045170DSICFET N-CH 1700V 72A TO247-3 |
3387 | 101.37 |
ДобавитьРасследования |
Tube | C2M™ | Not For New Designs | N-Channel | SiCFET (Silicon Carbide) | 1700 V | 72A (Tc) | 20V | 70mOhm @ 50A, 20V | 4V @ 18mA | 188 nC @ 20 V | +25V, -10V | 3672 pF @ 1000 V | - | 520W (Tc) | -40°C ~ 150°C (TJ) | Through Hole |
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Таблицы данных |
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IXFN200N10PMOSFET N-CH 100V 200A SOT-227B |
170 | 27.58 |
ДобавитьРасследования |
Box | HiPerFET™, Polar | Active | N-Channel | MOSFET (Metal Oxide) | 100 V | 200A (Tc) | 10V | 7.5mOhm @ 500mA, 10V | 5V @ 8mA | 235 nC @ 10 V | ±20V | 7600 pF @ 25 V | - | 680W (Tc) | -55°C ~ 175°C (TJ) | Chassis Mount |
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MSC080SMA330B4MOSFET SIC 3300 V 80 MOHM TO-247 |
3886 | 147.44 |
ДобавитьРасследования |
Bulk | - | Active | N-Channel | SiCFET (Silicon Carbide) | 3300 V | 41A (Tc) | 20V | 105mOhm @ 30A, 20V | 2.97V @ 3mA | 55 nC @ 20 V | +23V, -10V | 3462 pF @ 2400 V | - | 381W (Tc) | -55°C ~ 150°C (TJ) | Through Hole |
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Таблицы данных |
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IPZ60R017C7XKSA1MOSFET N-CH 600V 109A TO247-4 |
16932 | 30.92 |
ДобавитьРасследования |
Bulk,Tube | CoolMOS™ C7 | Active | N-Channel | MOSFET (Metal Oxide) | 600 V | 109A (Tc) | 10V | 17mOhm @ 58.2A, 10V | 4V @ 2.91mA | 240 nC @ 10 V | ±20V | 9890 pF @ 400 V | - | 446W (Tc) | -55°C ~ 150°C (TJ) | Through Hole |
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Таблицы данных |
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IXFK360N15T2MOSFET N-CH 150V 360A TO264AA |
3266 | 31.40 |
ДобавитьРасследования |
Tube | HiPerFET™, TrenchT2™ | Active | N-Channel | MOSFET (Metal Oxide) | 150 V | 360A (Tc) | 10V | 4mOhm @ 60A, 10V | 5V @ 8mA | 715 nC @ 10 V | ±20V | 47500 pF @ 25 V | - | 1670W (Tc) | -55°C ~ 175°C (TJ) | Through Hole |
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Таблицы данных |
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IXFN140N30PMOSFET N-CH 300V 110A SOT-227B |
2581 | 33.90 |
ДобавитьРасследования |
Tube | HiPerFET™, Polar | Active | N-Channel | MOSFET (Metal Oxide) | 300 V | 110A (Tc) | 10V | 24mOhm @ 70A, 10V | 5V @ 8mA | 185 nC @ 10 V | ±20V | 14800 pF @ 25 V | - | 700W (Tc) | -55°C ~ 150°C (TJ) | Chassis Mount |
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