Грузовой вагон ( )| Таблицы данных | Фотографии | Производитель. Часть # | Акции | Цены | А | Packaging | Series | ProductStatus | FETType | Technology | DraintoSourceVoltage(Vdss) | Current-ContinuousDrain(Id)@25°C | DriveVoltage(MaxRdsOnMinRdsOn) | RdsOn(Max)@IdVgs | Vgs(th)(Max)@Id | GateCharge(Qg)(Max)@Vgs | Vgs(Max) | InputCapacitance(Ciss)(Max)@Vds | FETFeature | PowerDissipation(Max) | OperatingTemperature | MountingType |
|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|
Таблицы данных |
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MSC040SMA120B4SICFET N-CH 1200V 66A TO247-4 |
154 | 26.64 |
ДобавитьРасследования |
Tube | - | Active | N-Channel | SiCFET (Silicon Carbide) | 1200 V | 66A (Tc) | 20V | 50mOhm @ 40A, 20V | 2.6V @ 2mA | 137 nC @ 20 V | +23V, -10V | 1990 pF @ 1000 V | - | 323W (Tc) | -55°C ~ 175°C (TJ) | Through Hole |
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Таблицы данных |
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VS-FC270SA20MOSFET N-CH 200V 287A SOT227 |
2710 | 27.31 |
ДобавитьРасследования |
Bulk | - | Active | N-Channel | MOSFET (Metal Oxide) | 200 V | 287A (Tc) | 10V | 4.7mOhm @ 200A, 10V | 4.3V @ 1mA | 250 nC @ 10 V | ±20V | 16500 pF @ 100 V | - | 937W (Tc) | -55°C ~ 175°C (TJ) | Chassis Mount |
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Таблицы данных |
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IXFN140N20PMOSFET N-CH 200V 115A SOT227B |
2896 | 27.58 |
ДобавитьРасследования |
Box | HiPerFET™, Polar | Active | N-Channel | MOSFET (Metal Oxide) | 200 V | 115A (Tc) | 10V, 15V | 18mOhm @ 70A, 10V | 5V @ 4mA | 240 nC @ 10 V | ±20V | 7500 pF @ 25 V | - | 680W (Tc) | -55°C ~ 175°C (TJ) | Chassis Mount |
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Таблицы данных |
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IXTH50P10MOSFET P-CH 100V 50A TO247 |
2349 | 11.48 |
ДобавитьРасследования |
Tube | - | Active | P-Channel | MOSFET (Metal Oxide) | 100 V | 50A (Tc) | 10V | 55mOhm @ 25A, 10V | 5V @ 250µA | 140 nC @ 10 V | ±20V | 4350 pF @ 25 V | - | 300W (Tc) | -55°C ~ 150°C (TJ) | Through Hole |
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Таблицы данных |
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STW42N65M5MOSFET N-CH 650V 33A TO247-3 |
3058 | 11.51 |
ДобавитьРасследования |
Tube | MDmesh™ V | Active | N-Channel | MOSFET (Metal Oxide) | 650 V | 33A (Tc) | 10V | 79mOhm @ 16.5A, 10V | 5V @ 250µA | 100 nC @ 10 V | ±25V | 4650 pF @ 100 V | - | 190W (Tc) | 150°C (TJ) | Through Hole |
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Таблицы данных |
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IXTH10P60MOSFET P-CH 600V 10A TO247 |
2245 | 11.57 |
ДобавитьРасследования |
Tube | - | Active | P-Channel | MOSFET (Metal Oxide) | 600 V | 10A (Tc) | 10V | 1Ohm @ 5A, 10V | 5V @ 250µA | 160 nC @ 10 V | ±20V | 4700 pF @ 25 V | - | 300W (Tc) | -55°C ~ 150°C (TJ) | Through Hole |
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Таблицы данных |
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IXFB60N80PMOSFET N-CH 800V 60A PLUS264 |
2049 | 28.89 |
ДобавитьРасследования |
Tube | HiPerFET™, Polar | Active | N-Channel | MOSFET (Metal Oxide) | 800 V | 60A (Tc) | 10V | 140mOhm @ 30A, 10V | 5V @ 8mA | 250 nC @ 10 V | ±30V | 18000 pF @ 25 V | - | 1250W (Tc) | -55°C ~ 150°C (TJ) | Through Hole |
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Таблицы данных |
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MSC080SMA120JSICFET N-CH 1.2KV 35A SOT227 |
3718 | 30.76 |
ДобавитьРасследования |
Tube | - | Active | N-Channel | SiCFET (Silicon Carbide) | 1200 V | 37A (Tc) | - | - | - | - | - | - | - | - | -55°C ~ 175°C (TJ) | Chassis Mount |
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Таблицы данных |
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IPZ65R019C7XKSA1MOSFET N-CH 650V 75A TO247-4 |
3511 | 30.80 |
ДобавитьРасследования |
Tube | CoolMOS™ C7 | Active | N-Channel | MOSFET (Metal Oxide) | 650 V | 75A (Tc) | 10V | 19mOhm @ 58.3A, 10V | 4V @ 2.92mA | 215 nC @ 10 V | ±20V | 9900 pF @ 400 V | - | 446W (Tc) | -55°C ~ 150°C (TJ) | Through Hole |
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Таблицы данных |
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C3M0032120KSICFET N-CH 1200V 63A TO247-4L |
3408 | 32.58 |
ДобавитьРасследования |
Tube | C3M™ | Active | N-Channel | SiCFET (Silicon Carbide) | 1200 V | 63A (Tc) | 15V | 43mOhm @ 40A, 15V | 3.6V @ 11.5mA | 118 nC @ 15 V | +15V, -4V | 3357 pF @ 1000 V | - | 283W (Tc) | -40°C ~ 175°C (TJ) | Through Hole |
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Таблицы данных |
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IXFN420N10TMOSFET N-CH 100V 420A SOT227B |
2508 | 32.85 |
ДобавитьРасследования |
Tube | HiPerFET™, Trench | Active | N-Channel | MOSFET (Metal Oxide) | 100 V | 420A (Tc) | 10V | 2.3mOhm @ 60A, 10V | 5V @ 8mA | 670 nC @ 10 V | ±20V | 47000 pF @ 25 V | - | 1070W (Tc) | -55°C ~ 175°C (TJ) | Chassis Mount |
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Таблицы данных |
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UJ4SC075011K4S750V/11MOHM, SIC, STACKED CASCOD |
2315 | 33.06 |
ДобавитьРасследования |
Tube | - | Active | N-Channel | SiCFET (Silicon Carbide) | 750 V | 104A (Tc) | 12V | 14.2mOhm @ 60A, 12V | 5.5V @ 10mA | 75 nC @ 15 V | ±20V | 3245 pF @ 400 V | - | 357W (Tc) | -55°C ~ 175°C (TJ) | Through Hole |
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Таблицы данных |
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IXFK240N25X3MOSFET N-CH 250V 240A TO264 |
2051 | 33.68 |
ДобавитьРасследования |
Tube | HiPerFET™, Ultra X3 | Active | N-Channel | MOSFET (Metal Oxide) | 250 V | 240A (Tc) | 10V | 5mOhm @ 120A, 10V | 4.5V @ 8mA | 345 nC @ 10 V | ±20V | 23800 pF @ 25 V | - | 1250W (Tc) | -55°C ~ 150°C (TJ) | Through Hole |
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Таблицы данных |
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IXFK300N20X3MOSFET N-CH 200V 300A TO264 |
3308 | 33.68 |
ДобавитьРасследования |
Tube | HiPerFET™, Ultra X3 | Active | N-Channel | MOSFET (Metal Oxide) | 200 V | 300A (Tc) | 10V | 4mOhm @ 150A, 10V | 4.5V @ 8mA | 375 nC @ 10 V | ±20V | 23800 pF @ 25 V | - | 1250W (Tc) | -55°C ~ 150°C (TJ) | Through Hole |
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MSC400SMA330B4MOSFET SIC 3300 V 400 MOHM TO-24 |
2390 | 34.29 |
ДобавитьРасследования |
Bulk | - | Active | N-Channel | SiCFET (Silicon Carbide) | 3300 V | 11A (Tc) | 20V | 520mOhm @ 5A, 20V | 2.97V @ 1mA | 37 nC @ 20 V | +23V, -10V | 579 pF @ 2400 V | - | 131W (Tc) | -55°C ~ 150°C (TJ) | Through Hole |
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Таблицы данных |
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IXTX200N10L2MOSFET N-CH 100V 200A PLUS247-3 |
2024 | 35.39 |
ДобавитьРасследования |
Tube | Linear L2™ | Active | N-Channel | MOSFET (Metal Oxide) | 100 V | 200A (Tc) | 10V | 11mOhm @ 100A, 10V | 4.5V @ 3mA | 540 nC @ 10 V | ±20V | 23000 pF @ 25 V | - | 1040W (Tc) | -55°C ~ 150°C (TJ) | Through Hole |
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Таблицы данных |
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IXTN40P50PMOSFET P-CH 500V 40A SOT227B |
2950 | 37.01 |
ДобавитьРасследования |
Tube | PolarP™ | Active | P-Channel | MOSFET (Metal Oxide) | 500 V | 40A (Tc) | 10V | 230mOhm @ 500mA, 10V | 4V @ 1mA | 205 nC @ 10 V | ±20V | 11500 pF @ 25 V | - | 890W (Tc) | -55°C ~ 150°C (TJ) | Chassis Mount |
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Таблицы данных |
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IXTX110N20L2MOSFET N-CH 200V 110A PLUS247-3 |
2680 | 37.67 |
ДобавитьРасследования |
Tube | Linear L2™ | Active | N-Channel | MOSFET (Metal Oxide) | 200 V | 110A (Tc) | 10V | 24mOhm @ 55A, 10V | 4.5V @ 3mA | 500 nC @ 10 V | ±20V | 23000 pF @ 25 V | - | 960W (Tc) | -55°C ~ 150°C (TJ) | Through Hole |
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Таблицы данных |
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IXFN100N50PMOSFET N-CH 500V 90A SOT-227B |
2551 | 38.34 |
ДобавитьРасследования |
Tube | HiPerFET™, Polar | Active | N-Channel | MOSFET (Metal Oxide) | 500 V | 90A (Tc) | 10V | 49mOhm @ 50A, 10V | 5V @ 8mA | 240 nC @ 10 V | ±30V | 20000 pF @ 25 V | - | 1040W (Tc) | -55°C ~ 150°C (TJ) | Chassis Mount |
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Таблицы данных |
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IXTT1N300P3HVMOSFET N-CH 3000V 1A TO268 |
2712 | 39.73 |
ДобавитьРасследования |
Tube | Polar P3™ | Active | N-Channel | MOSFET (Metal Oxide) | 3000 V | 1A (Tc) | 10V | 50Ohm @ 500mA, 10V | 4V @ 250µA | 30.6 nC @ 10 V | ±20V | 895 pF @ 25 V | - | 195W (Tc) | -55°C ~ 150°C (TJ) | Surface Mount |
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