Грузовой вагон ( )| Таблицы данных | Фотографии | Производитель. Часть # | Акции | Цены | А | Packaging | Series | ProductStatus | FETType | Technology | DraintoSourceVoltage(Vdss) | Current-ContinuousDrain(Id)@25°C | DriveVoltage(MaxRdsOnMinRdsOn) | RdsOn(Max)@IdVgs | Vgs(th)(Max)@Id | GateCharge(Qg)(Max)@Vgs | Vgs(Max) | InputCapacitance(Ciss)(Max)@Vds | FETFeature | PowerDissipation(Max) | OperatingTemperature | MountingType |
|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|
Таблицы данных |
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IPDD60R050G7XTMA1MOSFET N-CH 600V 47A HDSOP-10 |
2576 | 1.00 |
ДобавитьРасследования |
Tape & Reel (TR),Cut Tape (CT),Digi-Reel®,Bulk | CoolMOS™ G7 | Active | N-Channel | MOSFET (Metal Oxide) | 600 V | 47A (Tc) | 10V | 50mOhm @ 15.9A, 10V | 4V @ 800µA | 68 nC @ 10 V | ±20V | 2670 pF @ 400 V | - | 278W (Tc) | -55°C ~ 150°C (TJ) | Surface Mount |
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Таблицы данных |
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IPB038N12N3GATMA1MOSFET N-CH 120V 120A D2PAK |
2118 | 7.32 |
ДобавитьРасследования |
Tape & Reel (TR),Cut Tape (CT),Digi-Reel® | OptiMOS™ | Active | N-Channel | MOSFET (Metal Oxide) | 120 V | 120A (Tc) | 10V | 3.8mOhm @ 100A, 10V | 4V @ 270µA | 211 nC @ 10 V | ±20V | 13800 pF @ 60 V | - | 300W (Tc) | -55°C ~ 175°C (TJ) | Surface Mount |
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Таблицы данных |
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STW4N150MOSFET N-CH 1500V 4A TO247-3 |
2864 | 9.08 |
ДобавитьРасследования |
Tube | PowerMESH™ | Active | N-Channel | MOSFET (Metal Oxide) | 1500 V | 4A (Tc) | 10V | 7Ohm @ 2A, 10V | 5V @ 250µA | 50 nC @ 10 V | ±30V | 1300 pF @ 25 V | - | 160W (Tc) | 150°C (TJ) | Through Hole |
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Таблицы данных |
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NVMFS5C404NLWFAFT1GMOSFET N-CH 40V 370A 5DFN |
3963 | 1.00 |
ДобавитьРасследования |
Tape & Reel (TR),Cut Tape (CT),Digi-Reel®,Bulk | Automotive, AEC-Q101 | Active | N-Channel | MOSFET (Metal Oxide) | 40 V | 370A (Tc) | 4.5V, 10V | 0.67mOhm @ 50A, 10V | 2V @ 250µA | 81 nC @ 4.5 V | ±20V | 12168 pF @ 25 V | - | 200W (Tc) | -55°C ~ 175°C (TJ) | Surface Mount |
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Таблицы данных |
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SIHG47N60E-E3MOSFET N-CH 600V 47A TO247AC |
3223 | 10.21 |
ДобавитьРасследования |
Tube | - | Not For New Designs | N-Channel | MOSFET (Metal Oxide) | 600 V | 47A (Tc) | 10V | 64mOhm @ 24A, 10V | 4V @ 250µA | 220 nC @ 10 V | ±30V | 9620 pF @ 100 V | - | 357W (Tc) | -55°C ~ 150°C (TJ) | Through Hole |
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Таблицы данных |
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FCH040N65S3-F155MOSFET N-CH 650V 65A TO247-3 |
2225 | 1.00 |
ДобавитьРасследования |
Bulk,Tube | SuperFET® III | Active | N-Channel | MOSFET (Metal Oxide) | 650 V | 65A (Tc) | 10V | 40mOhm @ 32.5A, 10V | 4.5V @ 6.5mA | 136 nC @ 10 V | ±30V | 4740 pF @ 400 V | - | 417W (Tc) | -55°C ~ 150°C | Through Hole |
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Таблицы данных |
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IPW60R045P7XKSA1MOSFET N-CH 650V 61A TO247-3-41 |
3458 | 10.37 |
ДобавитьРасследования |
Tube | CoolMOS™ P7 | Active | N-Channel | MOSFET (Metal Oxide) | 650 V | 61A (Tc) | 10V | 45mOhm @ 22.5A, 10V | 4V @ 1.08mA | 90 nC @ 10 V | ±20V | 3891 pF @ 400 V | - | 201W (Tc) | -55°C ~ 150°C (TJ) | Through Hole |
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Таблицы данных |
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HUF75652G3MOSFET N-CH 100V 75A TO247-3 |
2616 | 10.50 |
ДобавитьРасследования |
Tube | UltraFET™ | Active | N-Channel | MOSFET (Metal Oxide) | 100 V | 75A (Tc) | 10V | 8mOhm @ 75A, 10V | 4V @ 250µA | 475 nC @ 20 V | ±20V | 7585 pF @ 25 V | - | 515W (Tc) | -55°C ~ 175°C (TJ) | Through Hole |
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Таблицы данных |
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APT42F50BMOSFET N-CH 500V 42A TO247 |
3465 | 10.53 |
ДобавитьРасследования |
Tube | POWER MOS 8™ | Active | N-Channel | MOSFET (Metal Oxide) | 500 V | 42A (Tc) | 10V | 130mOhm @ 21A, 10V | 5V @ 1mA | 170 nC @ 10 V | ±30V | 6810 pF @ 25 V | - | 625W (Tc) | -55°C ~ 150°C (TJ) | Through Hole |
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Таблицы данных |
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G3R60MT07D750V 60M TO-247-3 G3R SIC MOSFET |
2704 | 10.75 |
ДобавитьРасследования |
Tube | G3R™ | Active | - | SiCFET (Silicon Carbide) | 750 V | - | - | - | - | - | - | - | - | - | - | Through Hole |
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Таблицы данных |
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IXTH26P20PMOSFET P-CH 200V 26A TO247 |
3673 | 0.00 |
ДобавитьРасследования |
Tube | PolarP™ | Active | P-Channel | MOSFET (Metal Oxide) | 200 V | 26A (Tc) | 10V | 170mOhm @ 13A, 10V | 4V @ 250µA | 56 nC @ 10 V | ±20V | 2740 pF @ 25 V | - | 300W (Tc) | -55°C ~ 175°C (TJ) | Through Hole |
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Таблицы данных |
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IRFP2907ZPBFMOSFET N-CH 75V 90A TO247AC |
2252 | 5.28 |
ДобавитьРасследования |
Tube | HEXFET® | Not For New Designs | N-Channel | MOSFET (Metal Oxide) | 75 V | 90A (Tc) | 10V | 4.5mOhm @ 90A, 10V | 4V @ 250µA | 270 nC @ 10 V | ±20V | 7500 pF @ 25 V | - | 310W (Tc) | -55°C ~ 175°C (TJ) | Through Hole |
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Таблицы данных |
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C3M0065090J-TRSICFET N-CH 900V 35A D2PAK-7 |
2240 | 16.28 |
ДобавитьРасследования |
Tape & Reel (TR),Cut Tape (CT),Digi-Reel® | C3M™ | Active | N-Channel | SiCFET (Silicon Carbide) | 900 V | 35A (Tc) | 15V | 78mOhm @ 20A, 15V | 2.1V @ 5mA | 30 nC @ 15 V | +19V, -8V | 660 pF @ 600 V | - | 113W (Tc) | -55°C ~ 150°C (TJ) | Surface Mount |
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Таблицы данных |
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G3R60MT07J750V 60M TO-263-7 G3R SIC MOSFET |
2444 | 11.34 |
ДобавитьРасследования |
Tube | G3R™ | Active | - | SiCFET (Silicon Carbide) | 750 V | - | - | - | - | - | - | - | - | - | - | Surface Mount |
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Таблицы данных |
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AUIRF8739L2TRMOSFET N-CH 40V 57A DIRECTFET |
3501 | 1.00 |
ДобавитьРасследования |
Tape & Reel (TR),Cut Tape (CT),Digi-Reel®,Bulk | HEXFET® | Active | N-Channel | MOSFET (Metal Oxide) | 40 V | 57A (Ta), 545A (Tc) | 10V | 0.6mOhm @ 195A, 10V | 3.9V @ 250µA | 562 nC @ 10 V | 40V | 17890 pF @ 25 V | - | 3.8W (Ta), 340W (Tc) | -55°C ~ 175°C (TJ) | Surface Mount |
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Таблицы данных |
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STP42N65M5MOSFET N-CH 650V 33A TO220-3 |
3409 | 11.52 |
ДобавитьРасследования |
Tube | MDmesh™ V | Active | N-Channel | MOSFET (Metal Oxide) | 650 V | 33A (Tc) | 10V | 79mOhm @ 16.5A, 10V | 5V @ 250µA | 100 nC @ 10 V | ±25V | 4650 pF @ 100 V | - | 190W (Tc) | 150°C (TJ) | Through Hole |
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Таблицы данных |
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IXTP86N20X4MOSFET 200V 86A N-CH ULTRA TO220 |
3508 | 11.57 |
ДобавитьРасследования |
Tube | Ultra X4 | Active | N-Channel | MOSFET (Metal Oxide) | 200 V | 86A (Tc) | 10V | 13mOhm @ 43A, 10V | 4.5V @ 250µA | 70 nC @ 10 V | ±20V | 2250 pF @ 25 V | - | 300W (Tc) | -55°C ~ 175°C (TJ) | Through Hole |
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Таблицы данных |
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IXFH44N50PMOSFET N-CH 500V 44A TO247AD |
2173 | 11.60 |
ДобавитьРасследования |
Tube | HiPerFET™, Polar | Active | N-Channel | MOSFET (Metal Oxide) | 500 V | 44A (Tc) | 10V | 140mOhm @ 22A, 10V | 5V @ 4mA | 98 nC @ 10 V | ±30V | 5440 pF @ 25 V | - | 658W (Tc) | -55°C ~ 150°C (TJ) | Through Hole |
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Таблицы данных |
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IXTQ88N30PMOSFET N-CH 300V 88A TO3P |
3937 | 11.76 |
ДобавитьРасследования |
Tube | Polar | Active | N-Channel | MOSFET (Metal Oxide) | 300 V | 88A (Tc) | 10V | 40mOhm @ 44A, 10V | 5V @ 250µA | 180 nC @ 10 V | ±20V | 6300 pF @ 25 V | - | 600W (Tc) | -55°C ~ 150°C (TJ) | Through Hole |
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Таблицы данных |
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IXFH12N100FMOSFET N-CH 1000V 12A TO247AD |
2364 | 11.76 |
ДобавитьРасследования |
Tube | HiPerFET™, F Class | Active | N-Channel | MOSFET (Metal Oxide) | 1000 V | 12A (Tc) | 10V | 1.05Ohm @ 6A, 10V | 5.5V @ 4mA | 77 nC @ 10 V | ±20V | 2700 pF @ 25 V | - | 300W (Tc) | -55°C ~ 150°C (TJ) | Through Hole |
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