Грузовой вагон ( )| Таблицы данных | Фотографии | Производитель. Часть # | Акции | Цены | А | Packaging | Series | ProductStatus | FETType | Technology | DraintoSourceVoltage(Vdss) | Current-ContinuousDrain(Id)@25°C | DriveVoltage(MaxRdsOnMinRdsOn) | RdsOn(Max)@IdVgs | Vgs(th)(Max)@Id | GateCharge(Qg)(Max)@Vgs | Vgs(Max) | InputCapacitance(Ciss)(Max)@Vds | FETFeature | PowerDissipation(Max) | OperatingTemperature | MountingType |
|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|
Таблицы данных |
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TK100E10N1,S1XMOSFET N-CH 100V 100A TO220 |
3908 | 3.79 |
ДобавитьРасследования |
Tube | U-MOSVIII-H | Active | N-Channel | MOSFET (Metal Oxide) | 100 V | 100A (Ta) | 10V | 3.4mOhm @ 50A, 10V | 4V @ 1mA | 140 nC @ 10 V | ±20V | 8800 pF @ 50 V | - | 255W (Tc) | 150°C (TJ) | Through Hole |
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Таблицы данных |
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IPP65R095C7XKSA1MOSFET N-CH 650V 24A TO220-3 |
2260 | 7.39 |
ДобавитьРасследования |
Tube | CoolMOS™ C7 | Active | N-Channel | MOSFET (Metal Oxide) | 650 V | 24A (Tc) | 10V | 95mOhm @ 11.8A, 10V | 4V @ 590µA | 45 nC @ 10 V | ±20V | 2140 pF @ 400 V | - | 128W (Tc) | -55°C ~ 150°C (TJ) | Through Hole |
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Таблицы данных |
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IRFSL3006PBFMOSFET N-CH 60V 195A TO262 |
3052 | 7.39 |
ДобавитьРасследования |
Tube | HEXFET® | Active | N-Channel | MOSFET (Metal Oxide) | 60 V | 195A (Tc) | 10V | 2.5mOhm @ 170A, 10V | 4V @ 250µA | 300 nC @ 10 V | ±20V | 8970 pF @ 50 V | - | 375W (Tc) | -55°C ~ 175°C (TJ) | Through Hole |
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Таблицы данных |
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IXTQ10P50PMOSFET P-CH 500V 10A TO3P |
3536 | 7.40 |
ДобавитьРасследования |
Tube | PolarP™ | Active | P-Channel | MOSFET (Metal Oxide) | 500 V | 10A (Tc) | 10V | 1Ohm @ 5A, 10V | 4V @ 250µA | 50 nC @ 10 V | ±20V | 2840 pF @ 25 V | - | 300W (Tc) | -55°C ~ 150°C (TJ) | Through Hole |
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Таблицы данных |
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STP8N120K5MOSFET N-CH 1200V 6A TO220 |
2523 | 7.51 |
ДобавитьРасследования |
Tube | MDmesh™ K5 | Active | N-Channel | MOSFET (Metal Oxide) | 1200 V | 6A (Tc) | 10V | 2Ohm @ 2.5A, 10V | 5V @ 100µA | 13.7 nC @ 10 V | - | 505 pF @ 100 V | - | 130W (Tc) | -55°C ~ 150°C (TJ) | Through Hole |
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Таблицы данных |
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STP20N90K5MOSFET N-CH 900V 20A TO220 |
3048 | 7.58 |
ДобавитьРасследования |
Tube | MDmesh™ K5 | Active | N-Channel | MOSFET (Metal Oxide) | 900 V | 20A (Tc) | 10V | 250mOhm @ 10A, 10V | 5V @ 100µA | 40 nC @ 10 V | ±30V | 1500 pF @ 100 V | - | 250W (Tc) | -55°C ~ 150°C (TJ) | Through Hole |
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Таблицы данных |
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IRF250P225MOSFET N-CH 250V 69A TO247AC |
2006 | 7.72 |
ДобавитьРасследования |
Tube | StrongIRFET™ | Active | N-Channel | MOSFET (Metal Oxide) | 250 V | 69A (Tc) | 10V | 22mOhm @ 41A, 10V | 4V @ 270µA | 96 nC @ 10 V | ±20V | 4897 pF @ 50 V | - | 313W (Tc) | -55°C ~ 175°C (TJ) | Through Hole |
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Таблицы данных |
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FDP22N50NMOSFET N-CH 500V 22A TO220-3 |
2461 | 4.01 |
ДобавитьРасследования |
Tube | UniFET™ | Active | N-Channel | MOSFET (Metal Oxide) | 500 V | 22A (Tc) | 10V | 220mOhm @ 11A, 10V | 5V @ 250µA | 65 nC @ 10 V | ±30V | 3200 pF @ 25 V | - | 312.5W (Tc) | -55°C ~ 150°C (TJ) | Through Hole |
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Таблицы данных |
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IXFH10N100PMOSFET N-CH 1000V 10A TO247AD |
2289 | 7.92 |
ДобавитьРасследования |
Tube | HiPerFET™, Polar | Active | N-Channel | MOSFET (Metal Oxide) | 1000 V | 10A (Tc) | 10V | 1.4Ohm @ 5A, 10V | 6.5V @ 1mA | 56 nC @ 10 V | ±30V | 3030 pF @ 25 V | - | 380W (Tc) | -55°C ~ 150°C (TJ) | Through Hole |
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Таблицы данных |
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IXTH96P085TMOSFET P-CH 85V 96A TO247 |
2059 | 7.94 |
ДобавитьРасследования |
Tube | TrenchP™ | Active | P-Channel | MOSFET (Metal Oxide) | 85 V | 96A (Tc) | 10V | 13mOhm @ 500mA, 10V | 4V @ 250µA | 180 nC @ 10 V | ±15V | 13100 pF @ 25 V | - | 298W (Tc) | -55°C ~ 150°C (TJ) | Through Hole |
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Таблицы данных |
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STP80NF03L-04MOSFET N-CH 30V 80A TO220AB |
3431 | 4.11 |
ДобавитьРасследования |
Tube | STripFET™ II | Last Time Buy | N-Channel | MOSFET (Metal Oxide) | 30 V | 80A (Tc) | 4.5V, 10V | 4.5mOhm @ 40A, 10V | 2.5V @ 250µA | 110 nC @ 4.5 V | ±20V | 5500 pF @ 25 V | - | 300W (Tc) | 175°C (TJ) | Through Hole |
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Таблицы данных |
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SIHFPS40N50L-GE3POWER MOSFET SUPER-247, 100 M @ |
2977 | 8.02 |
ДобавитьРасследования |
Tube | - | Active | N-Channel | MOSFET (Metal Oxide) | 500 V | 46A (Tc) | 10V | 100mOhm @ 28A, 10V | 5V @ 250µA | 380 nC @ 10 V | ±30V | 8110 pF @ 25 V | - | 540W (Tc) | -55°C ~ 150°C (TJ) | Through Hole |
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Таблицы данных |
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IPP60R099C6XKSA1MOSFET N-CH 600V 37.9A TO220-3 |
2592 | 8.14 |
ДобавитьРасследования |
Tube | CoolMOS™ | Not For New Designs | N-Channel | MOSFET (Metal Oxide) | 600 V | 37.9A (Tc) | 10V | 99mOhm @ 18.1A, 10V | 3.5V @ 1.21mA | 119 nC @ 10 V | ±20V | 2660 pF @ 100 V | - | 278W (Tc) | -55°C ~ 150°C (TJ) | Through Hole |
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Таблицы данных |
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IXTP3N120MOSFET N-CH 1200V 3A TO220AB |
2030 | 8.27 |
ДобавитьРасследования |
Tube | HiPerFET™ | Active | N-Channel | MOSFET (Metal Oxide) | 1200 V | 3A (Tc) | 10V | 4.5Ohm @ 500mA, 10V | 5V @ 250µA | 42 nC @ 10 V | ±20V | 1350 pF @ 25 V | - | 200W (Tc) | -55°C ~ 150°C (TJ) | Through Hole |
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Таблицы данных |
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IXTA3N120MOSFET N-CH 1200V 3A TO263 |
2375 | 8.27 |
ДобавитьРасследования |
Tube | - | Active | N-Channel | MOSFET (Metal Oxide) | 1200 V | 3A (Tc) | 10V | 4.5Ohm @ 1.5A, 10V | 5V @ 250µA | 42 nC @ 10 V | ±20V | 1350 pF @ 25 V | - | 200W (Tc) | -55°C ~ 150°C (TJ) | Surface Mount |
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Таблицы данных |
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IXTH52P10PMOSFET P-CH 100V 52A TO247 |
3782 | 8.31 |
ДобавитьРасследования |
Tube | PolarP™ | Active | P-Channel | MOSFET (Metal Oxide) | 100 V | 52A (Tc) | 10V | 50mOhm @ 52A, 10V | 4.5V @ 250µA | 60 nC @ 10 V | ±20V | 2845 pF @ 25 V | - | 300W (Tc) | -55°C ~ 150°C (TJ) | Through Hole |
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Таблицы данных |
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IRFP4868PBFMOSFET N-CH 300V 70A TO247AC |
401 | 8.43 |
ДобавитьРасследования |
Tube | - | Active | N-Channel | MOSFET (Metal Oxide) | 300 V | 70A (Tc) | 10V | 32mOhm @ 42A, 10V | 5V @ 250µA | 270 nC @ 10 V | ±20V | 10774 pF @ 50 V | - | 517W (Tc) | -55°C ~ 175°C (TJ) | Through Hole |
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Таблицы данных |
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NVHL072N65S3MOSFET N-CH 650V 44A TO247-3 |
3787 | 8.45 |
ДобавитьРасследования |
Tube | Automotive, AEC-Q101, SuperFET® III | Active | N-Channel | MOSFET (Metal Oxide) | 650 V | 44A (Tc) | 10V | 72mOhm @ 22A, 10V | 4.5V @ 1mA | 82 nC @ 10 V | ±30V | 3300 pF @ 400 V | - | 312W (Tc) | -55°C ~ 150°C (TJ) | Through Hole |
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Таблицы данных |
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IXFP3N120MOSFET N-CH 1200V 3A TO220AB |
200 | 8.49 |
ДобавитьРасследования |
Tube | HiPerFET™ | Active | N-Channel | MOSFET (Metal Oxide) | 1200 V | 3A (Tc) | 10V | 4.5Ohm @ 500mA, 10V | 5V @ 1.5mA | 39 nC @ 10 V | ±20V | 1050 pF @ 25 V | - | 200W (Tc) | -55°C ~ 150°C (TJ) | Through Hole |
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Таблицы данных |
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IXFP56N30X3MOSFET N-CH 300V 56A TO220AB |
3587 | 8.49 |
ДобавитьРасследования |
Tube | HiPerFET™, Ultra X3 | Active | N-Channel | MOSFET (Metal Oxide) | 300 V | 56A (Tc) | 10V | 27mOhm @ 28A, 10V | 4.5V @ 1.5mA | 56 nC @ 10 V | ±20V | 3750 pF @ 25 V | - | 320W (Tc) | -55°C ~ 150°C (TJ) | Through Hole |
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