Грузовой вагон ( )| Таблицы данных | Фотографии | Производитель. Часть # | Акции | Цены | А | Packaging | Series | ProductStatus | FETType | Technology | DraintoSourceVoltage(Vdss) | Current-ContinuousDrain(Id)@25°C | DriveVoltage(MaxRdsOnMinRdsOn) | RdsOn(Max)@IdVgs | Vgs(th)(Max)@Id | GateCharge(Qg)(Max)@Vgs | Vgs(Max) | InputCapacitance(Ciss)(Max)@Vds | FETFeature | PowerDissipation(Max) | OperatingTemperature | MountingType |
|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|
Таблицы данных |
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2SK2225-80-E#T2ABU / MOSFET |
2354 | 5.83 |
ДобавитьРасследования |
Tube | - | Active | N-Channel | MOSFET (Metal Oxide) | 1500 V | 2A (Ta) | 15V | 12Ohm @ 1A, 15V | 4V @ 1mA | - | ±20V | 990 pF @ 10 V | - | 50W (Tc) | 150°C | Through Hole |
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Таблицы данных |
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STW3N170MOSFET N-CH 1700V 2.6A TO247-3 |
3791 | 5.87 |
ДобавитьРасследования |
Tube | PowerMESH™ | Active | N-Channel | MOSFET (Metal Oxide) | 1700 V | 2.6A (Tc) | 10V | 13Ohm @ 1.3A, 10V | 5V @ 250µA | 44 nC @ 10 V | ±30V | 1100 pF @ 100 V | - | 160mW | -55°C ~ 150°C (TJ) | Through Hole |
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Таблицы данных |
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IPB180N04S400ATMA1MOSFET N-CH 40V 180A TO263-7 |
3892 | 5.72 |
ДобавитьРасследования |
Tape & Reel (TR),Cut Tape (CT),Digi-Reel®,Bulk | OptiMOS™ | Active | N-Channel | MOSFET (Metal Oxide) | 40 V | 180A (Tc) | 10V | 0.98mOhm @ 100A, 10V | 4V @ 230µA | 286 nC @ 10 V | ±20V | 22880 pF @ 25 V | - | 300W (Tc) | -55°C ~ 175°C (TJ) | Surface Mount |
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Таблицы данных |
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APT7M120BMOSFET N-CH 1200V 8A TO247 |
2659 | 5.93 |
ДобавитьРасследования |
Tube | - | Active | N-Channel | MOSFET (Metal Oxide) | 1200 V | 8A (Tc) | 10V | 2.5Ohm @ 3A, 10V | 5V @ 1mA | 80 nC @ 10 V | ±30V | 2565 pF @ 25 V | - | 335W (Tc) | -55°C ~ 150°C (TJ) | Through Hole |
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Таблицы данных |
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STW6N90K5MOSFET N-CH 900V 6A TO247 |
2087 | 3.18 |
ДобавитьРасследования |
Tube | MDmesh™ K5 | Active | N-Channel | MOSFET (Metal Oxide) | 900 V | 6A (Tc) | 10V | 1.1Ohm @ 3A, 10V | 5V @ 100µA | - | ±30V | - | - | 110W (Tc) | -55°C ~ 150°C (TJ) | Through Hole |
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Таблицы данных |
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MSC750SMA170B4TRANS SJT 1700V TO247-4 |
3603 | 6.00 |
ДобавитьРасследования |
Tube | - | Active | N-Channel | SiCFET (Silicon Carbide) | 1700 V | 7A (Tc) | 20V | 940mOhm @ 2.5A, 20V | 3.25V @ 100µA (Typ) | 11 nC @ 20 V | +23V, -10V | 184 pF @ 1360 V | - | 68W (Tc) | -55°C ~ 175°C (TJ) | Through Hole |
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Таблицы данных |
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IXTP86N20TMOSFET N-CH 200V 86A TO220AB |
2761 | 6.08 |
ДобавитьРасследования |
Tube | Trench | Active | N-Channel | MOSFET (Metal Oxide) | 200 V | 86A (Tc) | 10V | 29mOhm @ 500mA, 10V | 5V @ 1mA | 90 nC @ 10 V | ±30V | 4500 pF @ 25 V | - | 480W (Tc) | -55°C ~ 175°C (TJ) | Through Hole |
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Таблицы данных |
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IMBF170R450M1XTMA1SICFET N-CH 1700V 9.8A TO263-7 |
3542 | 9.95 |
ДобавитьРасследования |
Tape & Reel (TR),Cut Tape (CT),Digi-Reel® | CoolSiC™ | Active | N-Channel | SiCFET (Silicon Carbide) | 1700 V | 9.8A (Tc) | 12V, 15V | 450mOhm @ 2A, 15V | 5.7V @ 2.5mA | 11 nC @ 12 V | +20V, -10V | 610 pF @ 1000 V | - | 107W (Tc) | -55°C ~ 175°C (TJ) | Surface Mount |
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Таблицы данных |
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IRFP4229PBFMOSFET N-CH 250V 44A TO247AC |
3427 | 1.00 |
ДобавитьРасследования |
Bulk,Tube | HEXFET® | Active | N-Channel | MOSFET (Metal Oxide) | 250 V | 44A (Tc) | 10V | 46mOhm @ 26A, 10V | 5V @ 250µA | 110 nC @ 10 V | ±30V | 4560 pF @ 25 V | - | 310W (Tc) | -40°C ~ 175°C (TJ) | Through Hole |
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Таблицы данных |
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NVMTS0D4N04CLTXGMOSFET N-CH 40V 553.8A 8DFNW |
2511 | 11.20 |
ДобавитьРасследования |
Tape & Reel (TR),Cut Tape (CT),Digi-Reel® | Automotive, AEC-Q101 | Active | N-Channel | MOSFET (Metal Oxide) | 40 V | 553.8A (Tc) | 4.5V, 10V | 0.4mOhm @ 50A, 10V | 2.5V @ 250µA | 163 nC @ 4.5 V | ±20V | 20600 pF @ 20 V | - | 5W (Ta) | -55°C ~ 175°C (TJ) | Surface Mount |
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Таблицы данных |
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IRFPG50PBFMOSFET N-CH 1000V 6.1A TO247-3 |
2271 | 6.16 |
ДобавитьРасследования |
Tube | - | Active | N-Channel | MOSFET (Metal Oxide) | 1000 V | 6.1A (Tc) | 10V | 2Ohm @ 3.6A, 10V | 4V @ 250µA | 190 nC @ 10 V | ±20V | 2800 pF @ 25 V | - | 190W (Tc) | -55°C ~ 150°C (TJ) | Through Hole |
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Таблицы данных |
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NTBLS1D7N08HMOSFET - POWER, SINGLE, N-CHANNE |
3825 | 6.52 |
ДобавитьРасследования |
Tape & Reel (TR),Cut Tape (CT),Digi-Reel® | - | Active | N-Channel | MOSFET (Metal Oxide) | 80 V | 29A (Ta), 203A (Tc) | 6V, 10V | 1.7mOhm @ 80A, 10V | 4V @ 479µA | 121 nC @ 10 V | ±20V | 7675 pF @ 40 V | - | 3.5W (Ta), 167W (Tc) | -55°C ~ 175°C (TJ) | Surface Mount |
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Таблицы данных |
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IPP111N15N3GXKSA1MOSFET N-CH 150V 83A TO220-3 |
2312 | 6.25 |
ДобавитьРасследования |
Tube | OptiMOS™ | Active | N-Channel | MOSFET (Metal Oxide) | 150 V | 83A (Tc) | 8V, 10V | 11.1mOhm @ 83A, 10V | 4V @ 160µA | 55 nC @ 10 V | ±20V | 3230 pF @ 75 V | - | 214W (Tc) | -55°C ~ 175°C (TJ) | Through Hole |
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Таблицы данных |
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SIHB30N60E-GE3MOSFET N-CH 600V 29A D2PAK |
2445 | 6.35 |
ДобавитьРасследования |
Tube | - | Active | N-Channel | MOSFET (Metal Oxide) | 600 V | 29A (Tc) | 10V | 125mOhm @ 15A, 10V | 4V @ 250µA | 130 nC @ 10 V | ±30V | 2600 pF @ 100 V | - | 250W (Tc) | -55°C ~ 150°C (TJ) | Surface Mount |
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Таблицы данных |
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IRLP3034PBFMOSFET N-CH 40V 195A TO247AC |
2085 | 1.00 |
ДобавитьРасследования |
Bulk,Tube | HEXFET® | Active | N-Channel | MOSFET (Metal Oxide) | 40 V | 195A (Tc) | 4.5V, 10V | 1.7mOhm @ 195A, 10V | 2.5V @ 250µA | 162 nC @ 4.5 V | ±20V | 10315 pF @ 25 V | - | 341W (Tc) | -55°C ~ 175°C (TJ) | Through Hole |
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Таблицы данных |
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IPT60R125CFD7XTMA1MOSFET N-CH 600V 21A 8HSOF |
3490 | 6.13 |
ДобавитьРасследования |
Tape & Reel (TR),Cut Tape (CT),Digi-Reel® | CoolMOS™ CFD7 | Active | N-Channel | MOSFET (Metal Oxide) | 600 V | 21A (Tc) | 10V | 125mOhm @ 6.8A, 10V | 4.5V @ 340µA | 31 nC @ 10 V | ±20V | 1330 pF @ 400 V | - | 127W (Tc) | -55°C ~ 150°C (TJ) | Surface Mount |
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Таблицы данных |
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IPP076N15N5AKSA1MOSFET N-CH 150V 112A TO220-3 |
3193 | 6.45 |
ДобавитьРасследования |
Tube | OptiMOS™ 5 | Active | N-Channel | MOSFET (Metal Oxide) | 150 V | 112A (Tc) | 8V, 10V | 7.6mOhm @ 56A, 10 | 4.6V @ 160µA | 21 nC @ 10 V | ±20V | 4700 pF @ 75 V | Standard | 214W (Tc) | -55°C ~ 175°C (TJ) | Through Hole |
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Таблицы данных |
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IPT111N20NFDATMA1MOSFET N-CH 200V 96A 8HSOF |
3494 | 10.55 |
ДобавитьРасследования |
Tape & Reel (TR),Cut Tape (CT),Digi-Reel® | OptiMOS™ | Active | N-Channel | MOSFET (Metal Oxide) | 200 V | 96A (Tc) | 10V | 11.1mOhm @ 96A, 10V | 4V @ 267µA | 87 nC @ 10 V | ±20V | 7000 pF @ 100 V | - | 375W (Tc) | -55°C ~ 175°C (TJ) | Surface Mount |
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Таблицы данных |
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IPB60R099CPAATMA1MOSFET N-CH 600V 31A TO263-3 |
3890 | 10.56 |
ДобавитьРасследования |
Tape & Reel (TR),Cut Tape (CT),Digi-Reel® | CoolMOS™ | Active | N-Channel | MOSFET (Metal Oxide) | 600 V | 31A (Tc) | 10V | 105mOhm @ 18A, 10V | 3.5V @ 1.2mA | 80 nC @ 10 V | ±20V | 2800 pF @ 100 V | - | 255W (Tc) | -40°C ~ 150°C (TJ) | Surface Mount |
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Таблицы данных |
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IRFI3205PBFMOSFET N-CH 55V 64A TO220AB FP |
2970 | 3.42 |
ДобавитьРасследования |
Tube | HEXFET® | Active | N-Channel | MOSFET (Metal Oxide) | 55 V | 64A (Tc) | 10V | 8mOhm @ 34A, 10V | 4V @ 250µA | 170 nC @ 10 V | ±20V | 4000 pF @ 25 V | - | 63W (Tc) | -55°C ~ 175°C (TJ) | Through Hole |
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