Грузовой вагон ( )| Таблицы данных | Фотографии | Производитель. Часть # | Акции | Цены | А | Packaging | Series | ProductStatus | FETType | Technology | DraintoSourceVoltage(Vdss) | Current-ContinuousDrain(Id)@25°C | DriveVoltage(MaxRdsOnMinRdsOn) | RdsOn(Max)@IdVgs | Vgs(th)(Max)@Id | GateCharge(Qg)(Max)@Vgs | Vgs(Max) | InputCapacitance(Ciss)(Max)@Vds | FETFeature | PowerDissipation(Max) | OperatingTemperature | MountingType |
|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|
Таблицы данных |
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FDMS86550ET60MOSFET N-CH 60V 32A/245A POWER56 |
3665 | 7.81 |
ДобавитьРасследования |
Tape & Reel (TR),Cut Tape (CT),Digi-Reel® | PowerTrench® | Active | N-Channel | MOSFET (Metal Oxide) | 60 V | 32A (Ta), 245A (Tc) | 8V, 10V | 1.65mOhm @ 32A, 10V | 4.5V @ 250µA | 154 nC @ 10 V | ±20V | 8235 pF @ 30 V | - | 3.3W (Ta), 187W (Tc) | -55°C ~ 175°C (TJ) | Surface Mount |
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Таблицы данных |
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FCPF20N60MOSFET N-CH 600V 20A TO220F |
2307 | 4.31 |
ДобавитьРасследования |
Bulk,Tube | SuperFET™ | Not For New Designs | N-Channel | MOSFET (Metal Oxide) | 600 V | 20A (Tc) | 10V | 190mOhm @ 10A, 10V | 5V @ 250µA | 98 nC @ 10 V | ±30V | 3080 pF @ 25 V | - | 39W (Tc) | -55°C ~ 150°C (TJ) | Through Hole |
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Таблицы данных |
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PSMN4R8-100PSEQMOSFET N-CH 100V 120A TO220AB |
2538 | 4.31 |
ДобавитьРасследования |
Tube | - | Active | N-Channel | MOSFET (Metal Oxide) | 100 V | 120A (Tj) | 10V | 5mOhm @ 25A, 10V | 4V @ 1mA | 278 nC @ 10 V | ±20V | 14400 pF @ 50 V | - | 405W (Tc) | -55°C ~ 175°C (TJ) | Through Hole |
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Таблицы данных |
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STP5NK100ZMOSFET N-CH 1000V 3.5A TO220AB |
3770 | 4.33 |
ДобавитьРасследования |
Tube | SuperMESH3™ | Active | N-Channel | MOSFET (Metal Oxide) | 1000 V | 3.5A (Tc) | 10V | 3.7Ohm @ 1.75A, 10V | 4.5V @ 100µA | 59 nC @ 10 V | ±30V | 1154 pF @ 25 V | - | 125W (Tc) | -55°C ~ 150°C (TJ) | Through Hole |
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Таблицы данных |
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IRFB4127PBFMOSFET N-CH 200V 76A TO220AB |
3238 | 4.34 |
ДобавитьРасследования |
Tube | HEXFET® | Active | N-Channel | MOSFET (Metal Oxide) | 200 V | 76A (Tc) | 10V | 20mOhm @ 44A, 10V | 5V @ 250µA | 150 nC @ 10 V | ±20V | 5380 pF @ 50 V | - | 375W (Tc) | -55°C ~ 175°C (TJ) | Through Hole |
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Таблицы данных |
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SPP11N60C3XKSA1MOSFET N-CH 650V 11A TO220-3 |
2877 | 4.36 |
ДобавитьРасследования |
Tube | CoolMOS™ | Active | N-Channel | MOSFET (Metal Oxide) | 650 V | 11A (Tc) | 10V | 380mOhm @ 7A, 10V | 3.9V @ 500µA | 60 nC @ 10 V | ±20V | 1200 pF @ 25 V | - | 125W (Tc) | -55°C ~ 150°C (TJ) | Through Hole |
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Таблицы данных |
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IXTA10P50P-TRLMOSFET P-CH 500V 10A TO263 |
2672 | 6.74 |
ДобавитьРасследования |
Tape & Reel (TR),Cut Tape (CT),Digi-Reel® | Polar | Active | P-Channel | MOSFET (Metal Oxide) | 500 V | 10A (Tc) | 10V | 1Ohm @ 5A, 10V | 4V @ 250µA | 50 nC @ 10 V | ±20V | 2840 pF @ 25 V | - | 300W (Tc) | -55°C ~ 150°C (TJ) | Surface Mount |
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IXTA52P10P-TRLMOSFET P-CH 100V 52A TO263 |
2730 | 6.74 |
ДобавитьРасследования |
Tape & Reel (TR),Cut Tape (CT),Digi-Reel® | PolarP™ | Active | P-Channel | MOSFET (Metal Oxide) | 100 V | 52A (Tc) | 10V | 50mOhm @ 26A, 10V | 4V @ 250µA | 60 nC @ 10 V | ±20V | 2845 pF @ 25 V | - | 300W (Tc) | -55°C ~ 150°C (TJ) | Surface Mount |
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IXTA26P20P-TRLMOSFET P-CH 200V 26A TO263 |
3635 | 6.74 |
ДобавитьРасследования |
Tape & Reel (TR),Cut Tape (CT),Digi-Reel® | Polar | Active | P-Channel | MOSFET (Metal Oxide) | 200 V | 26A (Tc) | 10V | 170mOhm @ 13A, 10V | 4V @ 250µA | 56 nC @ 10 V | ±20V | 2740 pF @ 25 V | - | 300W (Tc) | -55°C ~ 150°C (TJ) | Surface Mount |
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Таблицы данных |
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IPP65R190CFDXKSA2MOSFET N-CH 650V 17.5A TO220-3 |
3984 | 4.41 |
ДобавитьРасследования |
Tube | CoolMOS™ CFD2 | Active | N-Channel | MOSFET (Metal Oxide) | 650 V | 17.5A (Tc) | 10V | 190mOhm @ 7.3A, 10V | 4.5V @ 700µA | 68 nC @ 10 V | ±20V | 1850 pF @ 100 V | - | 151W (Tc) | -55°C ~ 150°C (TJ) | Through Hole |
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Таблицы данных |
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IPB180N10S402ATMA1MOSFET N-CH 100V 180A TO263-7 |
3015 | 1.00 |
ДобавитьРасследования |
Tape & Reel (TR),Cut Tape (CT),Digi-Reel®,Bulk | Automotive, AEC-Q101, OptiMOS™ | Active | N-Channel | MOSFET (Metal Oxide) | 100 V | 180A (Tc) | 10V | 2.5mOhm @ 100A, 10V | 3.5V @ 275µA | 200 nC @ 10 V | ±20V | 14600 pF @ 25 V | - | 300W (Tc) | -55°C ~ 175°C (TJ) | Surface Mount |
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Таблицы данных |
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STP240N10F7MOSFET N-CH 100V 180A TO220 |
3123 | 4.43 |
ДобавитьРасследования |
Tube | DeepGATE™, STripFET™ VII | Active | N-Channel | MOSFET (Metal Oxide) | 100 V | 180A (Tc) | 10V | 3.2mOhm @ 60A, 10V | 4.5V @ 250µA | 176 nC @ 10 V | ±20V | 12600 pF @ 25 V | - | 300W (Tc) | -55°C ~ 175°C (TJ) | Through Hole |
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Таблицы данных |
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STP11NM60MOSFET N-CH 650V 11A TO220AB |
3300 | 4.44 |
ДобавитьРасследования |
Tube | MDmesh™ | Not For New Designs | N-Channel | MOSFET (Metal Oxide) | 650 V | 11A (Tc) | 10V | 450mOhm @ 5.5A, 10V | 5V @ 250µA | 30 nC @ 10 V | ±25V | 1000 pF @ 25 V | - | 160W (Tc) | -65°C ~ 150°C (TJ) | Through Hole |
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Таблицы данных |
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STP14NK50ZFPMOSFET N-CH 500V 14A TO220FP |
3499 | 4.44 |
ДобавитьРасследования |
Tube | SuperMESH™ | Active | N-Channel | MOSFET (Metal Oxide) | 500 V | 14A (Tc) | 10V | 380mOhm @ 6A, 10V | 4.5V @ 100µA | 92 nC @ 10 V | ±30V | 2000 pF @ 25 V | - | 35W (Tc) | -55°C ~ 150°C (TJ) | Through Hole |
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Таблицы данных |
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SPW11N80C3FKSA1MOSFET N-CH 800V 11A TO247-3 |
2570 | 4.45 |
ДобавитьРасследования |
Tube | CoolMOS™ | Not For New Designs | N-Channel | MOSFET (Metal Oxide) | 800 V | 11A (Tc) | 10V | 450mOhm @ 7.1A, 10V | 3.9V @ 680µA | 85 nC @ 10 V | ±20V | 1600 pF @ 100 V | - | 156W (Tc) | -55°C ~ 150°C (TJ) | Through Hole |
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Таблицы данных |
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IXTA48P05TMOSFET P-CH 50V 48A TO263 |
3482 | 4.46 |
ДобавитьРасследования |
Tube | TrenchP™ | Active | P-Channel | MOSFET (Metal Oxide) | 50 V | 48A (Tc) | 10V | 30mOhm @ 24A, 10V | 4.5V @ 250µA | 53 nC @ 10 V | ±15V | 3660 pF @ 25 V | - | 150W (Tc) | -55°C ~ 150°C (TJ) | Surface Mount |
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Таблицы данных |
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IPB65R090CFD7ATMA1HIGH POWER_NEW |
3699 | 7.29 |
ДобавитьРасследования |
Tape & Reel (TR),Cut Tape (CT),Digi-Reel® | CoolMOS™ CFD7 | Active | N-Channel | MOSFET (Metal Oxide) | 650 V | 25A (Tc) | 10V | 90mOhm @ 12.5A, 10V | 4.5V @ 630µA | 53 nC @ 10 V | ±20V | 2513 pF @ 400 V | - | 127W (Tc) | -55°C ~ 150°C (TJ) | Surface Mount |
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Таблицы данных |
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IRFB4229PBFMOSFET N-CH 250V 46A TO220AB |
2049 | 1.00 |
ДобавитьРасследования |
Bulk,Tube | HEXFET® | Active | N-Channel | MOSFET (Metal Oxide) | 250 V | 46A (Tc) | 10V | 46mOhm @ 26A, 10V | 5V @ 250µA | 110 nC @ 10 V | ±30V | 4560 pF @ 25 V | - | 330W (Tc) | -40°C ~ 175°C (TJ) | Through Hole |
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Таблицы данных |
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PSMN1R1-30PL,127MOSFET N-CH 30V 120A TO220AB |
3148 | 1.00 |
ДобавитьРасследования |
Bulk,Bulk,Tube | - | Active | N-Channel | MOSFET (Metal Oxide) | 30 V | 120A (Tc) | 4.5V, 10V | 1.3mOhm @ 25A, 10V | 2.2V @ 1mA | 243 nC @ 10 V | ±20V | 14850 pF @ 15 V | - | 338W (Tc) | -55°C ~ 175°C (TJ) | Through Hole |
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Таблицы данных |
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FCP20N60MOSFET N-CH 600V 20A TO220-3 |
4000 | 4.60 |
ДобавитьРасследования |
Bulk,Tube | SuperFET™ | Not For New Designs | N-Channel | MOSFET (Metal Oxide) | 600 V | 20A (Tc) | 10V | 190mOhm @ 10A, 10V | 5V @ 250µA | 98 nC @ 10 V | ±30V | 3080 pF @ 25 V | - | 208W (Tc) | -55°C ~ 150°C (TJ) | Through Hole |
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