Грузовой вагон ( )| Таблицы данных | Фотографии | Производитель. Часть # | Акции | Цены | А | Packaging | Series | ProductStatus | FETType | Technology | DraintoSourceVoltage(Vdss) | Current-ContinuousDrain(Id)@25°C | DriveVoltage(MaxRdsOnMinRdsOn) | RdsOn(Max)@IdVgs | Vgs(th)(Max)@Id | GateCharge(Qg)(Max)@Vgs | Vgs(Max) | InputCapacitance(Ciss)(Max)@Vds | FETFeature | PowerDissipation(Max) | OperatingTemperature | MountingType |
|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|
Таблицы данных |
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STWA72N60DM2AGMOSFET N-CH 600V 66A TO247 |
2556 | 9.11 |
ДобавитьРасследования |
Tube | Automotive, AEC-Q101 | Active | N-Channel | MOSFET (Metal Oxide) | 600 V | 66A (Tc) | 10V | 42mOhm @ 33A, 10V | 5V @ 250µA | 121 nC @ 10 V | ±25V | 5508 pF @ 100 V | - | 446W (Tc) | -55°C ~ 150°C (TJ) | Through Hole |
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IXFT54N65X3HVMOSFET 54A 650V X3 TO268HV |
3901 | 9.12 |
ДобавитьРасследования |
Tube | HiPerFET™, Ultra X3 | Active | - | - | - | - | - | - | - | - | - | - | - | - | - | - |
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Таблицы данных |
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IXTT8P50MOSFET P-CH 500V 8A TO268 |
3837 | 9.13 |
ДобавитьРасследования |
Tube | - | Active | P-Channel | MOSFET (Metal Oxide) | 500 V | 8A (Tc) | 10V | 1.2Ohm @ 4A, 10V | 5V @ 250µA | 130 nC @ 10 V | ±20V | 3400 pF @ 25 V | - | 180W (Tc) | -55°C ~ 150°C (TJ) | Surface Mount |
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Таблицы данных |
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STFW42N60M2-EPMOSFET N-CH 600V 34A ISOWATT |
3483 | 7.60 |
ДобавитьРасследования |
Tube | MDmesh™ M2 | Active | N-Channel | MOSFET (Metal Oxide) | 600 V | 34A (Tc) | 10V | 87mOhm @ 17A, 10V | 4V @ 250µA | 55 nC @ 10 V | ±25V | 2370 pF @ 100 V | - | 63W (Tc) | -55°C ~ 150°C (TJ) | Through Hole |
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Таблицы данных |
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IPW80R290C3AXKSA1MOSFET N-CH 800V 17A TO247-3 |
3903 | 7.60 |
ДобавитьРасследования |
Tube | Automotive, AEC-Q101, CoolMOS™ | Active | N-Channel | MOSFET (Metal Oxide) | 800 V | 17A (Tc) | 10V | 290mOhm @ 11A, 10V | 3.9V @ 1mA | 117 nC @ 10 V | ±20V | 2300 pF @ 100 V | - | 227W (Tc) | -40°C ~ 150°C (TJ) | Through Hole |
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Таблицы данных |
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TK31J60W,S1VQMOSFET N-CH 600V 30.8A TO3P |
3066 | 7.62 |
ДобавитьРасследования |
Tube | DTMOSIV | Active | N-Channel | MOSFET (Metal Oxide) | 600 V | 30.8A (Ta) | 10V | 88mOhm @ 15.4A, 10V | 3.7V @ 1.5mA | 86 nC @ 10 V | ±30V | 3000 pF @ 300 V | Super Junction | 230W (Tc) | 150°C (TJ) | Through Hole |
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Таблицы данных |
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IXFQ30N60XMOSFET N-CH 600V 30A TO3P |
2293 | 7.65 |
ДобавитьРасследования |
Tube | HiPerFET™, Ultra X | Active | N-Channel | MOSFET (Metal Oxide) | 600 V | 30A (Tc) | 10V | 155mOhm @ 15A, 10V | 4.5V @ 4mA | 56 nC @ 10 V | ±30V | 2270 pF @ 25 V | - | 500W (Tc) | -55°C ~ 150°C (TJ) | Through Hole |
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Таблицы данных |
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STF26NM60NMOSFET N-CH 600V 20A TO220FP |
3622 | 7.68 |
ДобавитьРасследования |
Tube | MDmesh™ II | Active | N-Channel | MOSFET (Metal Oxide) | 600 V | 20A (Tc) | 10V | 165mOhm @ 10A, 10V | 4V @ 250µA | 60 nC @ 10 V | ±30V | 1800 pF @ 50 V | - | 35W (Tc) | 150°C (TJ) | Through Hole |
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IXTT140N10P-TRLMOSFET N-CH 100V 140A TO268 |
2910 | 7.70 |
ДобавитьРасследования |
Tape & Reel (TR) | Polar | Active | N-Channel | MOSFET (Metal Oxide) | 100 V | 140A (Tc) | 10V, 15V | 11mOhm @ 70A, 10V | 5V @ 250µA | 155 nC @ 10 V | ±20V | 4700 pF @ 25 V | - | 600W (Tc) | -55°C ~ 175°C (TJ) | Surface Mount |
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IXTT96N20P-TRLMOSFET N-CH 200V 96A TO268 |
3686 | 7.70 |
ДобавитьРасследования |
Tape & Reel (TR) | Polar | Active | N-Channel | MOSFET (Metal Oxide) | 200 V | 96A (Tc) | 10V | 24mOhm @ 48A, 10V | 5V @ 250µA | 145 nC @ 10 V | ±20V | 4800 pF @ 25 V | - | 600W (Tc) | -55°C ~ 175°C (TJ) | Surface Mount |
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Таблицы данных |
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IXTP20N65XMMOSFET N-CH 650V 9A TO220 |
3698 | 7.72 |
ДобавитьРасследования |
Tube | Ultra X | Active | N-Channel | MOSFET (Metal Oxide) | 650 V | 9A (Tc) | 10V | 210mOhm @ 10A, 10V | 5.5V @ 250µA | 35 nC @ 10 V | ±30V | 1390 pF @ 25 V | - | 63W (Tc) | -55°C ~ 150°C (TJ) | Through Hole |
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Таблицы данных |
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IXTQ480P2MOSFET N-CH 500V 52A TO3P |
3435 | 7.75 |
ДобавитьРасследования |
Tube | PolarP2™ | Active | N-Channel | MOSFET (Metal Oxide) | 500 V | 52A (Tc) | 10V | 120mOhm @ 26A, 10V | 4.5V @ 250µA | 108 nC @ 10 V | ±30V | 6800 pF @ 25 V | - | 960W (Tc) | -55°C ~ 150°C (TJ) | Through Hole |
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Таблицы данных |
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IXTA20N65XMOSFET N-CH 650V 20A TO263 |
2079 | 7.78 |
ДобавитьРасследования |
Tube | Ultra X | Active | N-Channel | MOSFET (Metal Oxide) | 650 V | 20A (Tc) | 10V | 210mOhm @ 10A, 10V | 5.5V @ 250µA | 35 nC @ 10 V | ±30V | 1390 pF @ 25 V | - | 320W (Tc) | -55°C ~ 150°C (TJ) | Surface Mount |
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Таблицы данных |
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APT14M100BMOSFET N-CH 1000V 14A TO247 |
2089 | 7.79 |
ДобавитьРасследования |
Tube | POWER MOS 8™ | Active | N-Channel | MOSFET (Metal Oxide) | 1000 V | 14A (Tc) | 10V | 900mOhm @ 7A, 10V | 5V @ 1mA | 120 nC @ 10 V | ±30V | 3965 pF @ 25 V | - | 500W (Tc) | -55°C ~ 150°C (TJ) | Through Hole |
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Таблицы данных |
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IXTH32P20TMOSFET P-CH 200V 32A TO247 |
2210 | 7.81 |
ДобавитьРасследования |
Tube | TrenchP™ | Active | P-Channel | MOSFET (Metal Oxide) | 200 V | 32A (Tc) | 10V | 130mOhm @ 16A, 10V | 4V @ 250µA | 185 nC @ 10 V | ±15V | 14500 pF @ 25 V | - | 300W (Tc) | -55°C ~ 150°C (TJ) | Through Hole |
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Таблицы данных |
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AUIRF7669L2TRMOSFET N-CH 100V 19A DIRECTFET |
2783 | 1.00 |
ДобавитьРасследования |
Tape & Reel (TR),Cut Tape (CT),Digi-Reel®,Bulk | HEXFET® | Active | N-Channel | MOSFET (Metal Oxide) | 100 V | 19A (Ta), 114A (Tc) | 10V | 4.4mOhm @ 68A, 10V | 5V @ 250µA | 120 nC @ 10 V | ±20V | 5660 pF @ 25 V | - | 3.3W (Ta), 100W (Tc) | -55°C ~ 175°C (TJ) | Surface Mount |
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Таблицы данных |
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IPB65R075CFD7AATMA1AUTOMOTIVE_COOLMOS PG-TO263-3 |
3285 | 7.71 |
ДобавитьРасследования |
Tape & Reel (TR) | CoolMOS™ | Active | N-Channel | MOSFET (Metal Oxide) | 650 V | 32A (Tc) | 10V | 75mOhm @ 16.4A, 10V | 4.5V @ 820µA | 68 nC @ 10 V | ±20V | 3288 pF @ 400 V | - | 171W (Tc) | -40°C ~ 150°C (TJ) | Surface Mount |
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IXFT140N10P-TRLMOSFET N-CH 100V 140A TO268 |
2075 | 7.86 |
ДобавитьРасследования |
Tape & Reel (TR) | HiPerFET™, Polar | Active | N-Channel | MOSFET (Metal Oxide) | 100 V | 140A (Tc) | 10V, 15V | 11mOhm @ 70A, 10V | 5V @ 4mA | 155 nC @ 10 V | ±20V | 4700 pF @ 25 V | - | 600W (Tc) | -55°C ~ 175°C (TJ) | Surface Mount |
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Таблицы данных |
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APT17F80BMOSFET N-CH 800V 18A TO247 |
2521 | 7.88 |
ДобавитьРасследования |
Tube | POWER MOS 8™ | Active | N-Channel | MOSFET (Metal Oxide) | 800 V | 18A (Tc) | 10V | 580mOhm @ 9A, 10V | 5V @ 1mA | 122 nC @ 10 V | ±30V | 3757 pF @ 25 V | - | 500W (Tc) | -55°C ~ 150°C (TJ) | Through Hole |
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Таблицы данных |
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R6025JNZC8MOSFET N-CH 600V 25A TO3PF |
2837 | 7.88 |
ДобавитьРасследования |
Bag | - | Obsolete | N-Channel | MOSFET (Metal Oxide) | 600 V | 25A (Tc) | 15V | 182mOhm @ 12.5A, 15V | 7V @ 4.5mA | 57 nC @ 15 V | ±30V | 1900 pF @ 100 V | - | 85W (Tc) | -55°C ~ 150°C (TJ) | Through Hole |
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