Diodes-Rectifiers-Single,Discrete Semiconductor Products

Таблицы данных	Производитель. Часть #	Акции	Цены	А	Packaging	Series	RoHS	Speed	Diode Type	Part Status	Mounting Type	Package / Case	Capacitance @ Vr, F	Supplier Device Package	Reverse Recovery Time (trr)	Current - Reverse Leakage @ Vr	Voltage - DC Reverse (Vr) (Max)	Current - Average Rectified (Io)
Таблицы данных	STTH30R06PI DIODE GEN PURP 600V 30A DOP3I STMicroelectronics	2872	4.35	- + Добавить Расследования	Tube		RoHS	Fast Recovery =< 500ns, > 200mA (Io)	Standard	Active	Through Hole	-	70 ns	25 µA @ 600 V	600 V	30A	175°C (Max)	1.85 V @ 30 A
Таблицы данных	SBT1050 SCHOTTKY TO-220AC 50V 10A Diotec Semiconductor	1000	0.50	- + Добавить Расследования	Tube		RoHS	Fast Recovery =< 500ns, > 200mA (Io)	Schottky	Active	Through Hole	-	-	300 µA @ 50 V	50 V	10A	-50°C ~ 150°C	700 mV @ 10 A
Таблицы данных	FFSH1065B-F085 650V 10A SIC SBD GEN1.5 onsemi	3817	4.57	- + Добавить Расследования	Tube	Automotive, AEC-Q101	RoHS	No Recovery Time > 500mA (Io)	Silicon Carbide Schottky	Active	Through Hole	421pF @ 1V, 100kHz	0 ns	40 µA @ 650 V	650 V	11.5A (DC)	-55°C ~ 175°C	-
Таблицы данных	SBT1060 SCHOTTKY TO-220AC 60V 10A Diotec Semiconductor	1000	0.50	- + Добавить Расследования	Tube		RoHS	Fast Recovery =< 500ns, > 200mA (Io)	Schottky	Active	Through Hole	-	-	300 µA @ 60 V	60 V	10A	-50°C ~ 150°C	700 mV @ 10 A
Таблицы данных	DSA1-18D DIODE AVALANCHE 1.8KV 2.3A IXYS	3975	4.76	- + Добавить Расследования	Bulk		RoHS	Standard Recovery >500ns, > 200mA (Io)	Avalanche	Active	Through Hole	-	-	700 µA @ 1800 V	1800 V	2.3A	-40°C ~ 150°C	1.34 V @ 7 A
Таблицы данных	UF5400 R-50V 3A ULTRA FAST NTE Electronics, Inc	368	0.50	- + Добавить Расследования	Bag		RoHS	Fast Recovery =< 500ns, > 200mA (Io)	Standard	Active	Through Hole	45pF @ 4V, 1MHz	50 ns	10 µA @ 50 V	50 V	3A	-	1 V @ 3 A
Таблицы данных	STTH3010PI DIODE GEN PURP 1KV 30A DOP3I STMicroelectronics	2378	4.78	- + Добавить Расследования	Tube		RoHS	Fast Recovery =< 500ns, > 200mA (Io)	Standard	Active	Through Hole	-	100 ns	15 µA @ 1000 V	1000 V	30A	175°C (Max)	2 V @ 30 A
Таблицы данных	SBT1020 SCHOTTKY DIODE, TO-220AC, 20V, 1 Diotec Semiconductor	1000	0.50	- + Добавить Расследования	Tube		RoHS	Fast Recovery =< 500ns, > 200mA (Io)	Schottky	Active	Through Hole	-	-	300 µA @ 20 V	20 V	10A	-50°C ~ 150°C	550 mV @ 10 A
Таблицы данных	SCS320AJTLL DIODES SILICON CARBIDE Rohm Semiconductor	3260	8.38	- + Добавить Расследования	Tape & Reel (TR),Cut Tape (CT),Digi-Reel®		RoHS	No Recovery Time > 500mA (Io)	Silicon Carbide Schottky	Active	Surface Mount	1000pF @ 1V, 1MHz	0 ns	100 µA @ 650 V	650 V	20A (DC)	175°C (Max)	1.5 V @ 20 A
Таблицы данных	SBT1040 SCHOTTKY DIODE, TO-220AC, 40V, 1 Diotec Semiconductor	1000	0.50	- + Добавить Расследования	Tube		RoHS	Fast Recovery =< 500ns, > 200mA (Io)	Schottky	Active	Through Hole	-	-	300 µA @ 40 V	40 V	10A	-50°C ~ 150°C	550 mV @ 10 A
Таблицы данных	SBT1030 SCHOTTKY DIODE, TO-220AC, 30V, 1 Diotec Semiconductor	1000	0.50	- + Добавить Расследования	Tube		RoHS	Fast Recovery =< 500ns, > 200mA (Io)	Schottky	Active	Through Hole	-	-	300 µA @ 30 V	30 V	10A	-50°C ~ 150°C	550 mV @ 10 A
Таблицы данных	IDH10G65C6XKSA1 DIODE SCHOTTKY 650V 24A TO220-2 Infineon Technologies	2095	4.86	- + Добавить Расследования	Tube		RoHS	No Recovery Time > 500mA (Io)	Silicon Carbide Schottky	Active	Through Hole	495pF @ 1V, 1MHz	0 ns	33 µA @ 420 V	650 V	24A (DC)	-55°C ~ 175°C	1.35 V @ 10 A
Таблицы данных	APT60D100BG DIODE GEN PURP 1KV 60A TO247 Microchip Technology	3348	4.98	- + Добавить Расследования	Tube		RoHS	Fast Recovery =< 500ns, > 200mA (Io)	Standard	Active	Through Hole	-	280 ns	250 µA @ 1000 V	1000 V	60A	-55°C ~ 175°C	2.5 V @ 60 A
Таблицы данных	UF5401 R-100V 3A ULTRA FAST NTE Electronics, Inc	592	0.52	- + Добавить Расследования	Bag		RoHS	Fast Recovery =< 500ns, > 200mA (Io)	Standard	Active	Through Hole	45pF @ 4V, 1MHz	50 ns	10 µA @ 100 V	100 V	3A	-	1 V @ 3 A
Таблицы данных	IDH10G65C5XKSA2 DIODE SCHOTKY 650V 10A TO220-2-1 Infineon Technologies	2456	5.11	- + Добавить Расследования	Tube	CoolSiC™+	RoHS	No Recovery Time > 500mA (Io)	Silicon Carbide Schottky	Active	Through Hole	300pF @ 1V, 1MHz	0 ns	180 µA @ 650 V	650 V	10A (DC)	-55°C ~ 175°C	1.7 V @ 10 A
Таблицы данных	1N5820 R-SCHOTTKY 20V 3A NTE Electronics, Inc	366	0.52	- + Добавить Расследования	Bag		RoHS	Fast Recovery =< 500ns, > 200mA (Io)	Schottky	Active	Through Hole	190pF @ 4V, 1MHz	-	500 µA @ 20 V	20 V	3A	-65°C ~ 125°C	475 mV @ 3 A
Таблицы данных	DSEI60-02A DIODE GEN PURP 200V 69A TO247AD IXYS	2238	5.30	- + Добавить Расследования	Tube		RoHS	Fast Recovery =< 500ns, > 200mA (Io)	Standard	Active	Through Hole	-	50 ns	50 µA @ 200 V	200 V	69A	-40°C ~ 150°C	1.08 V @ 60 A
Таблицы данных	SK2545YD2 SCHOTTKY D2PAK 45V 25A Diotec Semiconductor	1000	0.54	- + Добавить Расследования	Tube		RoHS	Fast Recovery =< 500ns, > 200mA (Io)	Schottky	Active	Surface Mount	-	-	200 µA @ 45 V	45 V	25A	-50°C ~ 150°C	580 mV @ 25 A
Таблицы данных	STBR6008WY AUTOMOTIVE 800 V, 60 A BRIDGE STMicroelectronics	3820	5.35	- + Добавить Расследования	Tube	Automotive, AEC-Q101	RoHS	Standard Recovery >500ns, > 200mA (Io)	Standard	Active	Through Hole	-	-	5 µA @ 800 V	800 V	60A	-40°C ~ 175°C	1.1 V @ 60 A
Таблицы данных	SBJ1845 SCHOTTKY ITO-220AC 45V 18A Diotec Semiconductor	1000	0.55	- + Добавить Расследования	Tube		RoHS	Fast Recovery =< 500ns, > 200mA (Io)	Schottky	Active	Through Hole	-	-	500 µA @ 45 V	45 V	18A	-50°C ~ 150°C	580 V @ 18 A

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