Таблицы данных | Фотографии | Производитель. Часть # | Акции | Цены | А | Packaging | Series | RoHS | Speed | Diode Type | Part Status | Mounting Type | Package / Case | Capacitance @ Vr, F | Supplier Device Package | Reverse Recovery Time (trr) | Current - Reverse Leakage @ Vr | Voltage - DC Reverse (Vr) (Max) | Current - Average Rectified (Io) | Operating Temperature - Junction | Voltage - Forward (Vf) (Max) @ If |
---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|
![]() Таблицы данных |
![]() |
APT60D40BGDIODE GEN PURP 400V 60A TO247 |
3466 | 2.99 |
ДобавитьРасследования |
Tube | RoHS | Fast Recovery =< 500ns, > 200mA (Io) | Standard | Active | Through Hole | - | 37 ns | 250 µA @ 400 V | 400 V | 60A | -55°C ~ 175°C | 1.5 V @ 60 A | |||
![]() Таблицы данных |
![]() |
GI852/MR852R-200 PRV 3A |
188 | 0.32 |
ДобавитьРасследования |
Bag | RoHS | Fast Recovery =< 500ns, > 200mA (Io) | Standard | Active | Through Hole | 28pF @ 4V, 1MHz | 200 ns | 10 µA @ 200 V | 200 V | 3A | -50°C ~ 150°C | 1.25 V @ 3 A | |||
![]() Таблицы данных |
![]() |
C4D02120EDIODE SCHOTTKY 1.2KV 2A TO252-2 |
2031 | 2.99 |
ДобавитьРасследования |
Tube | Z-Rec® | RoHS | No Recovery Time > 500mA (Io) | Silicon Carbide Schottky | Active | Surface Mount | 167pF @ 0V, 1MHz | 0 ns | 50 µA @ 1200 V | 1200 V | 10A (DC) | -55°C ~ 175°C | 1.8 V @ 2 A | ||
![]() Таблицы данных |
![]() |
GI854/MR854R-400 PRV 3A |
104 | 0.32 |
ДобавитьРасследования |
Bag | RoHS | Fast Recovery =< 500ns, > 200mA (Io) | Standard | Active | Through Hole | 28pF @ 4V, 1MHz | 200 ns | 10 µA @ 400 V | 400 V | 3A | -50°C ~ 150°C | 1.25 V @ 3 A | |||
![]() Таблицы данных |
![]() |
FE6ADIODE SFR D8X7.5 50V 6A |
1000 | 0.33 |
ДобавитьРасследования |
Tape & Reel (TR) | RoHS | Fast Recovery =< 500ns, > 200mA (Io) | Standard | Active | Through Hole | - | 50 ns | 5 µA @ 50 V | 50 V | 6A | -50°C ~ 175°C | 980 mV @ 5 A | |||
![]() Таблицы данных |
![]() |
STTH1512GDIODE GEN PURP 1.2KV 15A D2PAK |
3757 | 3.03 |
ДобавитьРасследования |
Tube | RoHS | Fast Recovery =< 500ns, > 200mA (Io) | Standard | Active | Surface Mount | - | 105 ns | 15 µA @ 1200 V | 1200 V | 15A | 175°C (Max) | 2.1 V @ 15 A | |||
![]() Таблицы данных |
![]() |
SK54BL_R1_00001SMB, SKY |
893 | 0.66 |
ДобавитьРасследования |
Tape & Reel (TR),Cut Tape (CT),Digi-Reel® | RoHS | Fast Recovery =< 500ns, > 200mA (Io) | Schottky | Active | Surface Mount | - | - | 100 µA @ 40 V | 40 V | 5A | -55°C ~ 150°C | 460 mV @ 5 A | |||
![]() Таблицы данных |
![]() |
TST40L200CWDIODE SCHOTTKY 200V 20A TO220AB |
2691 | 3.04 |
ДобавитьРасследования |
Tube | RoHS | Fast Recovery =< 500ns, > 200mA (Io) | Schottky | Active | Through Hole | - | - | 100 µA @ 200 V | 200 V | 20A | -55°C ~ 150°C | 880 mV @ 20 A | |||
![]() Таблицы данных |
![]() |
UF600BDIODE UFR D8X7.5 100V 6A |
1000 | 0.34 |
ДобавитьРасследования |
Tape & Reel (TR) | RoHS | Fast Recovery =< 500ns, > 200mA (Io) | Standard | Active | Through Hole | - | 75 ns | 10 µA @ 100 V | 100 V | 6A | -50°C ~ 175°C | 1 V @ 5 A | |||
![]() Таблицы данных |
![]() |
STTH3010DDIODE GEN PURP 1KV 30A TO220AC |
2183 | 3.09 |
ДобавитьРасследования |
Tube | RoHS | Fast Recovery =< 500ns, > 200mA (Io) | Standard | Active | Through Hole | - | 100 ns | 15 µA @ 1000 V | 1000 V | 30A | 175°C (Max) | 2 V @ 30 A | |||
![]() Таблицы данных |
![]() |
UF600GDIODE UFR D8X7.5 400V 6A |
1000 | 0.34 |
ДобавитьРасследования |
Tape & Reel (TR) | RoHS | Fast Recovery =< 500ns, > 200mA (Io) | Standard | Active | Through Hole | - | 75 ns | 10 µA @ 400 V | 400 V | 6A | -50°C ~ 175°C | 1.25 V @ 5 A | |||
![]() Таблицы данных |
![]() |
DSI30-16AS-TUBDIODE GEN PURP 1.6KV 30A TO263 |
2844 | 3.10 |
ДобавитьРасследования |
Tube | RoHS | Standard Recovery >500ns, > 200mA (Io) | Standard | Active | Surface Mount | 10pF @ 400V, 1MHz | - | 40 µA @ 1600 V | 1600 V | 30A | -40°C ~ 175°C | 1.29 V @ 30 A | |||
![]() Таблицы данных |
![]() |
FE6BDIODE SFR D8X7.5 100V 6A |
1000 | 0.34 |
ДобавитьРасследования |
Tape & Reel (TR) | RoHS | Fast Recovery =< 500ns, > 200mA (Io) | Standard | Active | Through Hole | - | 50 ns | 5 µA @ 100 V | 100 V | 6A | -50°C ~ 175°C | 980 mV @ 5 A | |||
![]() Таблицы данных |
![]() |
IDH06G65C5XKSA2DIODE SCHOTTKY 650V 6A TO220-2-1 |
3670 | 3.10 |
ДобавитьРасследования |
Tube | CoolSiC™+ | RoHS | No Recovery Time > 500mA (Io) | Silicon Carbide Schottky | Active | Through Hole | 190pF @ 1V, 1MHz | 0 ns | 110 µA @ 650 V | 650 V | 6A (DC) | -55°C ~ 175°C | 1.7 V @ 6 A | ||
![]() |
![]() |
1N5408RLG1N5408 DIODE 3A/1000V RECTIFIER |
135 | 0.35 |
ДобавитьРасследования |
Bulk | RoHS | Standard Recovery >500ns, > 200mA (Io) | Standard | Active | Through Hole | - | - | 10 µA @ 1000 V | 1000 V | 3A | -65°C ~ 150°C | 1 V @ 3 A | |||
![]() Таблицы данных |
![]() |
VS-8EWS08S-M3DIODE GEN PURP 800V 8A TO252AA |
3818 | 3.12 |
ДобавитьРасследования |
Tube | RoHS | Fast Recovery =< 500ns, > 200mA (Io) | Standard | Active | Surface Mount | - | - | 50 µA @ 800 V | 800 V | 8A | -55°C ~ 150°C | 1.1 V @ 8 A | |||
![]() |
![]() |
1N54041N5404 DIODE 3A / 400V RECTIFIER |
109 | 0.35 |
ДобавитьРасследования |
Bulk | RoHS | Standard Recovery >500ns, > 200mA (Io) | Standard | Active | Through Hole | 30pF @ 4V, 1MHz | - | 500 nA @ 400 V | 400 V | 3A | -55°C ~ 150°C | 980 mV @ 3 A | |||
![]() Таблицы данных |
![]() |
VS-8EWS12S-M3DIODE GEN PURP 1.2KV 8A TO252AA |
2080 | 3.12 |
ДобавитьРасследования |
Tube | RoHS | Fast Recovery =< 500ns, > 200mA (Io) | Standard | Active | Surface Mount | - | - | 50 µA @ 1200 V | 1200 V | 8A | -55°C ~ 150°C | 1.1 V @ 8 A | |||
![]() Таблицы данных |
![]() |
1N5061R-600PRV 1A |
277 | 0.35 |
ДобавитьРасследования |
Bag | RoHS | Standard Recovery >500ns, > 200mA (Io) | Standard | Active | Through Hole | 40pF @ 0V, 1MHz | 4 µs | 1 µA @ 600 V | 600 V | 2A | -55°C ~ 175°C | 1.15 V @ 2.5 A | |||
![]() Таблицы данных |
|
DSEP29-12ADIODE GEN PURP 1.2KV 30A TO220AC |
2946 | 3.13 |
ДобавитьРасследования |
Tube | HiPerFRED™ | RoHS | Fast Recovery =< 500ns, > 200mA (Io) | Standard | Active | Through Hole | - | 40 ns | 250 µA @ 1200 V | 1200 V | 30A | -55°C ~ 175°C | 2.75 V @ 30 A |