Diodes-Rectifiers-Single,Discrete Semiconductor Products

Таблицы данных	Производитель. Часть #	Акции	Цены	А	Packaging	Series	RoHS	Speed	Diode Type	Part Status	Mounting Type	Package / Case	Capacitance @ Vr, F	Supplier Device Package	Reverse Recovery Time (trr)	Current - Reverse Leakage @ Vr	Voltage - DC Reverse (Vr) (Max)	Current - Average Rectified (Io)
Таблицы данных	WND45P16WQ STANDARD POWER DIODE WeEn Semiconductors	2490	3.21	- + Добавить Расследования	Tube		RoHS	Standard Recovery >500ns, > 200mA (Io)	Standard	Active	Through Hole	-	-	10 µA @ 1600 V	1600 V	45A	150°C	1.4 V @ 45 A
Таблицы данных	RGP15M R-1000V 1.5A FAST SW NTE Electronics, Inc	987	0.36	- + Добавить Расследования	Bag	RGP15	RoHS	Fast Recovery =< 500ns, > 200mA (Io)	Standard	Active	Through Hole	25pF @ 4V, 1MHz	500 ns	5 µA @ 1000 V	1000 V	1.5A	-	1.3 V @ 1.5 A
Таблицы данных	D8025LTP DIODE GEN PURP 800V 15.9A TO220 Littelfuse Inc.	3614	3.22	- + Добавить Расследования	Tube		RoHS	Standard Recovery >500ns, > 200mA (Io)	Standard	Active	Through Hole	-	4 µs	20 µA @ 800 V	800 V	15.9A	-40°C ~ 125°C	-
Таблицы данных	NTE622 D-400V .5A FAST REC SMT NTE Electronics, Inc	606	0.36	- + Добавить Расследования	Bag		RoHS	Fast Recovery =< 500ns, > 200mA (Io)	Standard	Active	Surface Mount	4pF @ 4V, 1MHz	50 ns	5 µA @ 400 V	400 V	500mA	-65°C ~ 175°C	1.2 V @ 500 mA
Таблицы данных	STTH3006W DIODE GEN PURP 600V 30A DO247 STMicroelectronics	2409	3.30	- + Добавить Расследования	Tube		RoHS	Fast Recovery =< 500ns, > 200mA (Io)	Standard	Active	Through Hole	-	70 ns	25 µA @ 600 V	600 V	30A	175°C (Max)	1.85 V @ 30 A
Таблицы данных	P600U DIODE STD D8X7.5 1400V 6A Diotec Semiconductor	1000	0.40	- + Добавить Расследования	Tape & Reel (TR)		RoHS	Standard Recovery >500ns, > 200mA (Io)	Standard	Active	Through Hole	-	1.5 µs	10 µA @ 1400 V	1400 V	6A	-50°C ~ 175°C	1.1 V @ 6 A
Таблицы данных	IDH02G120C5XKSA1 DIODE SCHOT 1200V 2A TO220-2-1 Infineon Technologies	997	3.35	- + Добавить Расследования	Tube	CoolSiC™+	RoHS	No Recovery Time > 500mA (Io)	Silicon Carbide Schottky	Active	Through Hole	182pF @ 1V, 1MHz	0 ns	18 µA @ 1200 V	1200 V	2A (DC)	175°C (Max)	1.65 V @ 2 A
Таблицы данных	1N5062 R-800PRV 1A NTE Electronics, Inc	460	0.40	- + Добавить Расследования	Bag		RoHS	Fast Recovery =< 500ns, > 200mA (Io)	Avalanche	Active	Through Hole	40pF @ 0V, 1MHz	4 µs	1 µA @ 800 V	800 V	3A	-55°C ~ 175°C	1 V @ 1 A
Таблицы данных	SCS306AMC DIODES SILICON CARBIDE Rohm Semiconductor	2597	3.44	- + Добавить Расследования	Tube		RoHS	No Recovery Time > 500mA (Io)	Silicon Carbide Schottky	Active	Through Hole	300pF @ 1V, 1MHz	0 ns	30 µA @ 650 V	650 V	6A (DC)	175°C (Max)	1.5 V @ 6 A
Таблицы данных	FE6F DIODE SFR D8X7.5 300V 6A Diotec Semiconductor	1000	0.40	- + Добавить Расследования	Tape & Reel (TR)		RoHS	Fast Recovery =< 500ns, > 200mA (Io)	Standard	Active	Through Hole	-	50 ns	5 µA @ 300 V	300 V	6A	-50°C ~ 175°C	1 V @ 5 A
Таблицы данных	VS-8EWF02S-M3 DIODE GEN PURP 200V 8A TO252AA Vishay General Semiconductor - Diodes Division	2143	3.56	- + Добавить Расследования	Tube		RoHS	Fast Recovery =< 500ns, > 200mA (Io)	Standard	Active	Surface Mount	-	55 ns	100 µA @ 200 V	200 V	8A	-40°C ~ 150°C	1.2 V @ 8 A
Таблицы данных	FE6G DIODE SFR D8X7.5 400V 6A Diotec Semiconductor	1000	0.42	- + Добавить Расследования	Tape & Reel (TR)		RoHS	Fast Recovery =< 500ns, > 200mA (Io)	Standard	Active	Through Hole	-	50 ns	5 µA @ 400 V	400 V	6A	-50°C ~ 175°C	1.3 V @ 5 A
Таблицы данных	STTH3012D DIODE GEN PURP 1.2KV 30A TO220AC STMicroelectronics	2923	3.61	- + Добавить Расследования	Tube		RoHS	Fast Recovery =< 500ns, > 200mA (Io)	Standard	Active	Through Hole	-	115 ns	20 µA @ 1200 V	1200 V	30A	175°C (Max)	2.25 V @ 30 A
Таблицы данных	1N5614 DIODE GEN PURP 200V 1A AXIAL Microchip Technology	2188	3.63	- + Добавить Расследования	Bulk		RoHS	Standard Recovery >500ns, > 200mA (Io)	Standard	Active	Through Hole	-	2 µs	500 nA @ 200 V	200 V	1A	-65°C ~ 200°C	1.3 V @ 3 A
Таблицы данных	P1000B DIODE STD D8X7.5 100V 10A Diotec Semiconductor	1000	0.43	- + Добавить Расследования	Tape & Reel (TR)		RoHS	Standard Recovery >500ns, > 200mA (Io)	Standard	Active	Through Hole	-	1.5 µs	10 µA @ 100 V	100 V	10A	-50°C ~ 175°C	1.05 V @ 10 A
Таблицы данных	STPSC5H12D DIODE SCHOTTKY 1.2KV 5A TO220AC STMicroelectronics	2172	3.65	- + Добавить Расследования	Tube	ECOPACK®2	RoHS	No Recovery Time > 500mA (Io)	Silicon Carbide Schottky	Active	Through Hole	450pF @ 0V, 1MHz	0 ns	30 µA @ 1200 V	1200 V	5A	-40°C ~ 175°C	1.5 V @ 5 A
Таблицы данных	P1000D DIODE STD D8X7.5 200V 10A Diotec Semiconductor	1000	0.45	- + Добавить Расследования	Tape & Reel (TR)		RoHS	Standard Recovery >500ns, > 200mA (Io)	Standard	Active	Through Hole	-	1.5 µs	10 µA @ 200 V	200 V	10A	-50°C ~ 175°C	1.05 V @ 10 A
Таблицы данных	IDM10G120C5XTMA1 DIODE SCHTKY 1200V 38A PGTO252-2 Infineon Technologies	2297	5.64	- + Добавить Расследования	Tape & Reel (TR),Cut Tape (CT),Digi-Reel®	CoolSiC™+	RoHS	No Recovery Time > 500mA (Io)	Silicon Carbide Schottky	Active	Surface Mount	29pF @ 800V, 1MHz	0 ns	62 µA @ 12 V	1200 V	38A (DC)	-55°C ~ 150°C	1.8 V @ 10 A
Таблицы данных	P1200A DIODE STD D8X7.5 50V 12A Diotec Semiconductor	1000	0.45	- + Добавить Расследования	Tape & Reel (TR)		RoHS	Standard Recovery >500ns, > 200mA (Io)	Standard	Active	Through Hole	-	-	10 µA @ 50 V	50 V	12A	-50°C ~ 150°C	950 mV @ 12 A
Таблицы данных	STPSC10H12G-TR DIODE SCHOTTKY 1.2KV 10A D2PAK STMicroelectronics	2967	6.30	- + Добавить Расследования	Tape & Reel (TR),Cut Tape (CT),Digi-Reel®	ECOPACK®	RoHS	No Recovery Time > 500mA (Io)	Silicon Carbide Schottky	Active	Surface Mount	725pF @ 0V, 1MHz	0 ns	60 µA @ 1200 V	1200 V	10A	-40°C ~ 175°C	1.5 V @ 10 A

Total 48193 Records«Prev 1... 1903 1904 1905 190619071908 1909 1910...2410 Next»