Грузовой вагон ( )| Таблицы данных | Фотографии | Производитель. Часть # | Акции | Цены | А | Packaging | Series | RoHS | Speed | Diode Type | Part Status | Mounting Type | Package / Case | Capacitance @ Vr, F | Supplier Device Package | Reverse Recovery Time (trr) | Current - Reverse Leakage @ Vr | Voltage - DC Reverse (Vr) (Max) | Current - Average Rectified (Io) | Operating Temperature - Junction | Voltage - Forward (Vf) (Max) @ If |
|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|
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MBR103510A, 35V, TO-220AC, SCHOTTKY REC |
825 | 0.69 |
ДобавитьРасследования |
Tube | RoHS | Fast Recovery =< 500ns, > 200mA (Io) | Schottky | Active | Through Hole | 750pF @ 5V, 1MHz | - | 100 µA @ 35 V | 35 V | 10A | -55°C ~ 150°C | 840 mV @ 10 A | |||
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Таблицы данных |
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VS-HFA16PB120-N3DIODE GEN PURP 1.2KV 16A TO247AC |
2267 | 9.53 |
ДобавитьРасследования |
Tube | Automotive, AEC-Q101 | RoHS | Fast Recovery =< 500ns, > 200mA (Io) | Standard | Active | Through Hole | - | 90 ns | 20 µA @ 1200 V | 1200 V | 16A | -55°C ~ 150°C | 3 V @ 16 A | ||
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Таблицы данных |
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UFT800DDIODE UFR TO-220AC 200V 8A |
1000 | 0.69 |
ДобавитьРасследования |
Tube | RoHS | Fast Recovery =< 500ns, > 200mA (Io) | Standard | Active | Through Hole | - | 25 ns | 5 µA @ 200 V | 200 V | 8A | -50°C ~ 150°C | 1 V @ 8 A | |||
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Таблицы данных |
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DSDI60-16ADIODE GEN PURP 1.6KV 63A TO247AD |
3825 | 10.26 |
ДобавитьРасследования |
Tube | RoHS | Fast Recovery =< 500ns, > 200mA (Io) | Standard | Active | Through Hole | - | 300 ns | 2 mA @ 1600 V | 1600 V | 63A | -40°C ~ 150°C | 4.1 V @ 70 A | |||
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Таблицы данных |
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UFT800BDIODE UFR TO-220AC 100V 8A |
1000 | 0.69 |
ДобавитьРасследования |
Tube | RoHS | Fast Recovery =< 500ns, > 200mA (Io) | Standard | Active | Through Hole | - | 25 ns | 5 µA @ 100 V | 100 V | 8A | -50°C ~ 150°C | 1 V @ 8 A | |||
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Таблицы данных |
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VS-71HF40DIODE GEN PURP 400V 70A DO203AB |
2322 | 10.91 |
ДобавитьРасследования |
Bulk | RoHS | Standard Recovery >500ns, > 200mA (Io) | Standard | Active | Chassis, Stud Mount | - | - | 15 mA @ 400 V | 400 V | 70A | -65°C ~ 180°C | 1.35 V @ 220 A | |||
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Таблицы данных |
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UFT800ADIODE UFR TO-220AC 50V 8A |
1000 | 0.69 |
ДобавитьРасследования |
Tube | RoHS | Fast Recovery =< 500ns, > 200mA (Io) | Standard | Active | Through Hole | - | 25 ns | 5 µA @ 50 V | 50 V | 8A | -50°C ~ 150°C | 1 V @ 8 A | |||
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Таблицы данных |
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FJH1100DIODE GEN PURP 15V 150MA DO35 |
2137 | 11.17 |
ДобавитьРасследования |
Bulk | RoHS | Small Signal =< 200mA (Io), Any Speed | Standard | Active | Through Hole | 2pF @ 0V, 1MHz | - | 10 pA @ 15 V | 15 V | 150mA (DC) | 175°C (Max) | 1.07 V @ 100 mA | |||
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Таблицы данных |
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F12K120DIODE FR D8X7.5 120V 12A |
1000 | 0.70 |
ДобавитьРасследования |
Tape & Reel (TR) | RoHS | Fast Recovery =< 500ns, > 200mA (Io) | Standard | Active | Through Hole | - | 300 ns | 5 µA @ 120 V | 120 V | 12A | -50°C ~ 175°C | 900 mV @ 12 A | |||
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Таблицы данных |
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IDWD20G120C5XKSA1SIC SCHOTTKY 1200V 20A TO247-2 |
3719 | 11.76 |
ДобавитьРасследования |
Tube | CoolSiC™+ | RoHS | No Recovery Time > 500mA (Io) | Silicon Carbide Schottky | Active | Through Hole | 1368pF @ 1V, 1MHz | 0 ns | 166 µA @ 1200 V | 1200 V | 62A (DC) | -55°C ~ 175°C | 1.65 V @ 20 A | ||
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Таблицы данных |
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P2000ADIODE STD D8X7.5 50V 20A |
1000 | 0.70 |
ДобавитьРасследования |
Tape & Reel (TR) | RoHS | Standard Recovery >500ns, > 200mA (Io) | Standard | Active | Through Hole | - | 1.5 µs | 10 µA @ 50 V | 50 V | 20A | -50°C ~ 150°C | 1.1 V @ 20 A | |||
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Таблицы данных |
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C4D10120EDIODE SCHOTTKY 1.2KV 10A TO252-2 |
2183 | 11.82 |
ДобавитьРасследования |
Tube | Z-Rec® | RoHS | No Recovery Time > 500mA (Io) | Silicon Carbide Schottky | Active | Surface Mount | 754pF @ 0V, 1MHz | 0 ns | 250 µA @ 1200 V | 1200 V | 33A (DC) | -55°C ~ 175°C | 1.8 V @ 10 A | ||
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Таблицы данных |
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UFT800GDIODE UFR TO-220AC 400V 8A |
1000 | 0.70 |
ДобавитьРасследования |
Tube | RoHS | Fast Recovery =< 500ns, > 200mA (Io) | Standard | Active | Through Hole | - | 35 ns | 5 µA @ 400 V | 400 V | 8A | -50°C ~ 150°C | 1.25 V @ 8 A | |||
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Таблицы данных |
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C4D10120HZRECTM 10A 1200V SIC SCHOTTKY DI |
3759 | 12.35 |
ДобавитьРасследования |
Tube | Z-Rec® | RoHS | No Recovery Time > 500mA (Io) | Silicon Carbide Schottky | Active | Through Hole | 754pF @ 0V, 1MHz | 0 ns | 250 µA @ 1200 V | 1200 V | 31.5A (DC) | -55°C ~ 175°C | 1.8 V @ 10 A | ||
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Таблицы данных |
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UFT800JDIODE UFR TO-220AC 600V 8A |
1000 | 0.70 |
ДобавитьРасследования |
Tube | RoHS | Fast Recovery =< 500ns, > 200mA (Io) | Standard | Active | Through Hole | - | 35 ns | 5 µA @ 600 V | 600 V | 8A | -50°C ~ 150°C | 1.75 V @ 8 A | |||
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Таблицы данных |
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GC50MPS06-247SIC DIODE 650V 50A TO-247-2 |
2246 | 14.75 |
ДобавитьРасследования |
Tube | SiC Schottky MPS™ | RoHS | No Recovery Time > 500mA (Io) | Silicon Carbide Schottky | Active | Through Hole | - | 0 ns | - | 650 V | 50A (DC) | 175°C (Max) | - | ||
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Таблицы данных |
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MSC050SDA120BDIODE SCHOTTKY 1200V TO-247 |
3955 | 14.87 |
ДобавитьРасследования |
Tube | RoHS | No Recovery Time > 500mA (Io) | Silicon Carbide Schottky | Active | Through Hole | 246pF @ 400V, 1MHz | 0 ns | 200 µA @ 1200 V | 1200 V | 109A (DC) | -55°C ~ 175°C | 1.8 V @ 50 A | |||
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Таблицы данных |
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RGP30DR-200V 3A FAST SW |
124 | 0.70 |
ДобавитьРасследования |
Bag | RGP30 | RoHS | Fast Recovery =< 500ns, > 200mA (Io) | Standard | Active | Through Hole | 60pF @ 4V, 1MHz | 150 ns | 5 µA @ 200 V | 200 V | 3A | - | 1.3 V @ 3 A | ||
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Таблицы данных |
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GB25MPS17-247SIC DIODE 1700V 25A TO-247-2 |
3033 | 19.80 |
ДобавитьРасследования |
Tube | SiC Schottky MPS™ | RoHS | No Recovery Time > 500mA (Io) | Silicon Carbide Schottky | Active | Through Hole | 1596pF @ 1V, 1MHz | 0 ns | 30 µA @ 1700 V | 1700 V | 110A (DC) | -55°C ~ 175°C | 1.8 V @ 25 A | ||
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Таблицы данных |
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P2000BDIODE STD D8X7.5 100V 20A |
1000 | 0.71 |
ДобавитьРасследования |
Tape & Reel (TR) | RoHS | Standard Recovery >500ns, > 200mA (Io) | Standard | Active | Through Hole | - | 1.5 µs | 10 µA @ 100 V | 100 V | 20A | -50°C ~ 150°C | 1.1 V @ 20 A |
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