Diodes-Rectifiers-Single,Discrete Semiconductor Products

Таблицы данных	Производитель. Часть #	Акции	Цены	А	Packaging	Series	RoHS	Speed	Diode Type	Part Status	Mounting Type	Package / Case	Capacitance @ Vr, F	Supplier Device Package	Reverse Recovery Time (trr)	Current - Reverse Leakage @ Vr	Voltage - DC Reverse (Vr) (Max)	Current - Average Rectified (Io)
Таблицы данных	VS-20ETS16THM3 RECTIFIER DIODE 20A 1600V TO-220 Vishay General Semiconductor - Diodes Division	2232	2.50	- + Добавить Расследования	Tube	Automotive, AEC-Q101	RoHS	Standard Recovery >500ns, > 200mA (Io)	Standard	Active	Through Hole	-	-	100 µA @ 1600 V	1600 V	20A	-40°C ~ 150°C	1.1 V @ 20 A
Таблицы данных	RGP15B R-100V 1.5A FAST SW NTE Electronics, Inc	422	0.24	- + Добавить Расследования	Bag	RGP15	RoHS	Fast Recovery =< 500ns, > 200mA (Io)	Standard	Active	Through Hole	25pF @ 4V, 1MHz	150 ns	5 µA @ 100 V	100 V	1.5A	-	1.3 V @ 1.5 A
Таблицы данных	APT30S20BG DIODE SCHOTTKY 200V 45A TO247 Microchip Technology	3237	2.52	- + Добавить Расследования	Tube		RoHS	Fast Recovery =< 500ns, > 200mA (Io)	Schottky	Active	Through Hole	-	55 ns	500 µA @ 200 V	200 V	45A	-55°C ~ 150°C	850 mV @ 30 A
Таблицы данных	MURB3JG_R1_00001 SMB, SUPER Panjit International Inc.	800	0.48	- + Добавить Расследования	Tape & Reel (TR),Cut Tape (CT),Digi-Reel®		RoHS	Fast Recovery =< 500ns, > 200mA (Io)	Standard	Active	Surface Mount	28pF @ 4V, 1MHz	50 ns	5 µA @ 600 V	600 V	3A	-55°C ~ 175°C	1.25 V @ 3 A
Таблицы данных	VS-20ETS08-M3 DIODE GEN PURP 800V 20A TO220AC Vishay General Semiconductor - Diodes Division	3491	2.57	- + Добавить Расследования	Tube		RoHS	Standard Recovery >500ns, > 200mA (Io)	Standard	Active	Through Hole	-	-	100 µA @ 800 V	800 V	20A	-40°C ~ 150°C	1.1 V @ 20 A
Таблицы данных	UF4006 R-800V 1A ULTRA FAST NTE Electronics, Inc	430	0.25	- + Добавить Расследования	Bag		RoHS	Fast Recovery =< 500ns, > 200mA (Io)	Standard	Active	Through Hole	17pF @ 4V, 1MHz	75 ns	10 µA @ 800 V	800 V	1A	-65°C ~ 150°C	1.7 V @ 1 A
Таблицы данных	STTH12R06DIRG DIODE GEN PURP 600V 12A TO220AC STMicroelectronics	3742	2.70	- + Добавить Расследования	Tube		RoHS	Fast Recovery =< 500ns, > 200mA (Io)	Standard	Active	Through Hole	-	45 ns	45 µA @ 600 V	600 V	12A	175°C (Max)	2.9 V @ 12 A
Таблицы данных	1N5817 R-SCHOTTKY 20V 1A NTE Electronics, Inc	220	0.27	- + Добавить Расследования	Bag		RoHS	Fast Recovery =< 500ns, > 200mA (Io)	Schottky	Active	Through Hole	110pF @ 4V, 1MHz	-	500 µA @ 20 V	20 V	1A	-65°C ~ 125°C	450 mV @ 1 A
Таблицы данных	SDUR6060W DIODE GEN PURP 600V 60A TO247AC SMC Diode Solutions	2240	2.75	- + Добавить Расследования	Tube		RoHS	Fast Recovery =< 500ns, > 200mA (Io)	Standard	Active	Through Hole	-	50 ns	100 µA @ 600 V	600 V	60A	-55°C ~ 150°C	2 V @ 60 A
Таблицы данных	UF4007 R-1000V 1A ULTRA FAST NTE Electronics, Inc	160	0.27	- + Добавить Расследования	Bag		RoHS	Fast Recovery =< 500ns, > 200mA (Io)	Standard	Active	Through Hole	17pF @ 4V, 1MHz	75 ns	10 µA @ 1000 V	1000 V	1A	-65°C ~ 150°C	1.7 V @ 1 A
Таблицы данных	C3D04060A DIODE SCHOTTKY 600V 4A TO220-2 Wolfspeed, Inc.	3973	2.86	- + Добавить Расследования	Tube	Z-Rec®	RoHS	No Recovery Time > 500mA (Io)	Silicon Carbide Schottky	Not For New Designs	Through Hole	251pF @ 0V, 1MHz	0 ns	50 µA @ 600 V	600 V	13.5A (DC)	-55°C ~ 175°C	1.8 V @ 4 A
Таблицы данных	RGP15G R-400V 1.5A FAST SW NTE Electronics, Inc	500	0.28	- + Добавить Расследования	Bag	RGP15	RoHS	Fast Recovery =< 500ns, > 200mA (Io)	Standard	Active	Through Hole	25pF @ 4V, 1MHz	150 ns	5 µA @ 400 V	400 V	1.5A	-	1.3 V @ 1.5 A
Таблицы данных	C3D04060F DIODE SCHOTTKY 600V 4A TO220-F2 Wolfspeed, Inc.	3144	2.86	- + Добавить Расследования	Tube	Z-Rec®	RoHS	No Recovery Time > 500mA (Io)	Silicon Carbide Schottky	Active	Through Hole	251pF @ 0V, 1MHz	0 ns	50 µA @ 600 V	600 V	6A (DC)	-55°C ~ 175°C	1.7 V @ 4 A
Таблицы данных	RGP15D R-200V 1.5A FAST SW NTE Electronics, Inc	183	0.28	- + Добавить Расследования	Bag	RGP15	RoHS	Fast Recovery =< 500ns, > 200mA (Io)	Standard	Active	Through Hole	25pF @ 4V, 1MHz	150 ns	5 µA @ 200 V	200 V	1.5A	-	1.3 V @ 1.5 A
Таблицы данных	DNA30E2200PZ-TRL DIODE GEN PURP 2.2KV 30A TO263 IXYS	3799	4.72	- + Добавить Расследования	Tape & Reel (TR),Cut Tape (CT),Digi-Reel®		RoHS	Standard Recovery >500ns, > 200mA (Io)	Standard	Active	Surface Mount	7pF @ 700V, 1MHz	-	40 µA @ 2200 V	2200 V	30A	-55°C ~ 150°C	1.26 V @ 30 A
Таблицы данных	P600S DIODE STD D8X7.5 1200V 6A Diotec Semiconductor	1000	0.29	- + Добавить Расследования	Tape & Reel (TR)		RoHS	Standard Recovery >500ns, > 200mA (Io)	Standard	Active	Through Hole	-	1.5 µs	10 µA @ 1200 V	1200 V	6A	-50°C ~ 175°C	1.1 V @ 6 A
Таблицы данных	DNA30EM2200PZ-TRL DIODE GEN PURP 2.2KV 30A TO263 IXYS	3566	4.72	- + Добавить Расследования	Tape & Reel (TR),Cut Tape (CT),Digi-Reel®		RoHS	Standard Recovery >500ns, > 200mA (Io)	Standard	Active	Surface Mount	7pF @ 700V, 1MHz	-	40 µA @ 2200 V	2200 V	30A	-55°C ~ 150°C	1.26 V @ 30 A
Таблицы данных	NTE620 D-400V .5AMP SURFACE MNT NTE Electronics, Inc	754	0.29	- + Добавить Расследования	Bag		RoHS	Standard Recovery >500ns, > 200mA (Io)	Standard	Active	Surface Mount	7pF @ 4V, 1MHz	-	5 µA @ 400 V	400 V	500mA	-65°C ~ 175°C	1.2 V @ 500 mA
Таблицы данных	VS-20ETS12-M3 DIODE GEN PURP 1.2KV 20A TO220AC Vishay General Semiconductor - Diodes Division	2433	2.97	- + Добавить Расследования	Tube		RoHS	Standard Recovery >500ns, > 200mA (Io)	Standard	Active	Through Hole	-	-	100 µA @ 1200 V	1200 V	20A	-40°C ~ 150°C	1 V @ 10 A
Таблицы данных	GI851/MR851 R- 100 PRV 3A NTE Electronics, Inc	933	0.30	- + Добавить Расследования	Bag		RoHS	Fast Recovery =< 500ns, > 200mA (Io)	Standard	Active	Through Hole	28pF @ 4V, 1MHz	200 ns	10 µA @ 100 V	100 V	3A	-50°C ~ 150°C	1.25 V @ 3 A

Total 48193 Records«Prev 1... 1901 1902 1903 190419051906 1907 1908...2410 Next»