Таблицы данных Фотографии Производитель. Часть # Акции Цены А Packaging Series RoHS Speed Diode Type Part Status Mounting Type Package / Case Capacitance @ Vr, F Supplier Device Package Reverse Recovery Time (trr) Current - Reverse Leakage @ Vr Voltage - DC Reverse (Vr) (Max) Current - Average Rectified (Io) Operating Temperature - Junction Voltage - Forward (Vf) (Max) @ If
SF64GHA0G

Таблицы данных

SF64GHA0G

SF64GHA0G

DIODE GEN PURP 200V 6A DO201AD

Taiwan Semiconductor Corporation

3562 0.00
- +

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Tape & Box (TB) Automotive, AEC-Q101 RoHS Fast Recovery =< 500ns, > 200mA (Io) Standard Active Through Hole 100pF @ 4V, 1MHz 35 ns 5 µA @ 200 V 200 V 6A -55°C ~ 150°C 975 mV @ 6 A
HERAF1603G C0G

Таблицы данных

HERAF1603G C0G

HERAF1603G C0G

DIODE GEN PURP 200V 16A ITO220AC

Taiwan Semiconductor Corporation

2625 0.00
- +

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Tube RoHS Fast Recovery =< 500ns, > 200mA (Io) Standard Active Through Hole 150pF @ 4V, 1MHz 50 ns 10 µA @ 200 V 200 V 16A -55°C ~ 150°C 1 V @ 16 A
MBRF10200HC0G

Таблицы данных

MBRF10200HC0G

MBRF10200HC0G

DIODE SCHOTTKY 200V 10A ITO220AC

Taiwan Semiconductor Corporation

2442 0.00
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Tube Automotive, AEC-Q101 RoHS Fast Recovery =< 500ns, > 200mA (Io) Schottky Active Through Hole - - 100 µA @ 200 V 200 V 10A -55°C ~ 150°C 1.05 V @ 10 A
1N4936GHA0G

Таблицы данных

1N4936GHA0G

1N4936GHA0G

DIODE GEN PURP 400V 1A DO204AL

Taiwan Semiconductor Corporation

2334 0.00
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Tape & Box (TB) Automotive, AEC-Q101 RoHS Fast Recovery =< 500ns, > 200mA (Io) Standard Active Through Hole 10pF @ 4V, 1MHz 200 ns 5 µA @ 400 V 400 V 1A -55°C ~ 150°C 1.2 V @ 1 A
N6180D N6180D

N6180D

DIODE

Diodes Incorporated

2346 0.00
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Расследования

Bulk RoHS - - Obsolete - - - - - - - -
UF1504S-B

Таблицы данных

UF1504S-B

UF1504S-B

DIODE GEN PURP 400V 1.5A DO41

Diodes Incorporated

2726 0.00
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Расследования

Bulk RoHS Fast Recovery =< 500ns, > 200mA (Io) Standard Obsolete Through Hole 35pF @ 4V, 1MHz 50 ns 5 µA @ 400 V 400 V 1.5A -65°C ~ 150°C 1.3 V @ 1.5 A
SF65G A0G

Таблицы данных

SF65G A0G

SF65G A0G

DIODE GEN PURP 300V 6A DO201AD

Taiwan Semiconductor Corporation

2592 0.00
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Расследования

Tape & Box (TB) RoHS Fast Recovery =< 500ns, > 200mA (Io) Standard Active Through Hole 50pF @ 4V, 1MHz 35 ns 5 µA @ 300 V 300 V 6A -55°C ~ 150°C 1.3 V @ 6 A
HERAF1604G C0G

Таблицы данных

HERAF1604G C0G

HERAF1604G C0G

DIODE GEN PURP 300V 16A ITO220AC

Taiwan Semiconductor Corporation

2781 0.00
- +

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Расследования

Tube RoHS Fast Recovery =< 500ns, > 200mA (Io) Standard Discontinued at Digi-Key Through Hole 150pF @ 4V, 1MHz 50 ns 10 µA @ 300 V 300 V 16A -55°C ~ 150°C 1 V @ 16 A
MBRF1035 C0G

Таблицы данных

MBRF1035 C0G

MBRF1035 C0G

DIODE SCHOTTKY 35V 10A ITO220AC

Taiwan Semiconductor Corporation

2129 0.00
- +

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Расследования

Tube RoHS Fast Recovery =< 500ns, > 200mA (Io) Schottky Active Through Hole - - 100 µA @ 35 V 35 V 10A -55°C ~ 150°C 700 mV @ 10 A
1N4937G A0G

Таблицы данных

1N4937G A0G

1N4937G A0G

DIODE GEN PURP 600V 1A DO204AL

Taiwan Semiconductor Corporation

2301 0.00
- +

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Расследования

Tape & Box (TB) RoHS Fast Recovery =< 500ns, > 200mA (Io) Standard Active Through Hole 10pF @ 4V, 1MHz 200 ns 5 µA @ 600 V 600 V 1A -55°C ~ 150°C 1.2 V @ 1 A
N6200D N6200D

N6200D

DIODE

Diodes Incorporated

3120 0.00
- +

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Расследования

Bulk RoHS - - Obsolete - - - - - - - -
UF1505S-B

Таблицы данных

UF1505S-B

UF1505S-B

DIODE GEN PURP 600V 1.5A DO41

Diodes Incorporated

2695 0.00
- +

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Расследования

Bulk RoHS Fast Recovery =< 500ns, > 200mA (Io) Standard Obsolete Through Hole 20pF @ 4V, 1MHz 75 ns 5 µA @ 600 V 600 V 1.5A -65°C ~ 150°C 1.7 V @ 1.5 A
SF65GHA0G

Таблицы данных

SF65GHA0G

SF65GHA0G

DIODE GEN PURP 300V 6A DO201AD

Taiwan Semiconductor Corporation

2116 0.00
- +

Добавить

Расследования

Tape & Box (TB) Automotive, AEC-Q101 RoHS Fast Recovery =< 500ns, > 200mA (Io) Standard Active Through Hole 50pF @ 4V, 1MHz 35 ns 5 µA @ 300 V 300 V 6A -55°C ~ 150°C 1.3 V @ 6 A
HERAF1605G C0G

Таблицы данных

HERAF1605G C0G

HERAF1605G C0G

DIODE GEN PURP 400V 16A ITO220AC

Taiwan Semiconductor Corporation

2496 0.00
- +

Добавить

Расследования

Tube RoHS Fast Recovery =< 500ns, > 200mA (Io) Standard Discontinued at Digi-Key Through Hole 150pF @ 4V, 1MHz 50 ns 10 µA @ 400 V 400 V 16A -55°C ~ 150°C 1.3 V @ 16 A
1N4937GHA0G

Таблицы данных

1N4937GHA0G

1N4937GHA0G

DIODE GEN PURP 600V 1A DO204AL

Taiwan Semiconductor Corporation

2132 0.00
- +

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Расследования

Tape & Box (TB) Automotive, AEC-Q101 RoHS Fast Recovery =< 500ns, > 200mA (Io) Standard Active Through Hole 10pF @ 4V, 1MHz 200 ns 5 µA @ 600 V 600 V 1A -55°C ~ 150°C 1.2 V @ 1 A
MBRF1035HC0G

Таблицы данных

MBRF1035HC0G

MBRF1035HC0G

DIODE SCHOTTKY 35V 10A ITO220AC

Taiwan Semiconductor Corporation

3171 0.00
- +

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Расследования

Tube Automotive, AEC-Q101 RoHS Fast Recovery =< 500ns, > 200mA (Io) Schottky Active Through Hole - - 100 µA @ 35 V 35 V 10A -55°C ~ 150°C 700 mV @ 10 A
N6270D N6270D

N6270D

DIODE

Diodes Incorporated

3460 0.00
- +

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Расследования

Bulk RoHS - - Obsolete - - - - - - - -
UF1506S-B

Таблицы данных

UF1506S-B

UF1506S-B

DIODE GEN PURP 800V 1.5A DO41

Diodes Incorporated

3784 0.00
- +

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Расследования

Bulk RoHS Fast Recovery =< 500ns, > 200mA (Io) Standard Obsolete Through Hole 20pF @ 4V, 1MHz 75 ns 5 µA @ 800 V 800 V 1.5A -65°C ~ 150°C 1.7 V @ 1.5 A
SF66GHA0G

Таблицы данных

SF66GHA0G

SF66GHA0G

DIODE GEN PURP 400V 6A DO201AD

Taiwan Semiconductor Corporation

2544 0.00
- +

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Расследования

Tape & Box (TB) Automotive, AEC-Q101 RoHS Fast Recovery =< 500ns, > 200mA (Io) Standard Active Through Hole 50pF @ 4V, 1MHz 35 ns 5 µA @ 400 V 400 V 6A -55°C ~ 150°C 1.3 V @ 6 A
HERAF801G C0G

Таблицы данных

HERAF801G C0G

HERAF801G C0G

DIODE GEN PURP 50V 8A ITO220AC

Taiwan Semiconductor Corporation

3366 0.00
- +

Добавить

Расследования

Tube RoHS Fast Recovery =< 500ns, > 200mA (Io) Standard Active Through Hole 80pF @ 4V, 1MHz 50 ns 10 µA @ 50 V 50 V 8A -55°C ~ 150°C 1 V @ 8 A
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