Таблицы данных Фотографии Производитель. Часть # Акции Цены А Packaging Series RoHS Speed Diode Type Part Status Mounting Type Package / Case Capacitance @ Vr, F Supplier Device Package Reverse Recovery Time (trr) Current - Reverse Leakage @ Vr Voltage - DC Reverse (Vr) (Max) Current - Average Rectified (Io) Operating Temperature - Junction Voltage - Forward (Vf) (Max) @ If
Z7130A Z7130A

Z7130A

DIODE SCHOTTKY 30A SOD323

Diodes Incorporated

3196 0.00
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Tape & Reel (TR) RoHS - - Obsolete - - - - - - - -
SF30JG-B

Таблицы данных

SF30JG-B

SF30JG-B

DIODE GEN PURP 600V 3A DO201AD

Diodes Incorporated

2283 0.00
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Bulk RoHS Fast Recovery =< 500ns, > 200mA (Io) Standard Obsolete Through Hole 50pF @ 4V, 1MHz 50 ns 5 µA @ 600 V 600 V 3A -65°C ~ 150°C 1.5 V @ 3 A
SF62GHA0G

Таблицы данных

SF62GHA0G

SF62GHA0G

DIODE GEN PURP 100V 6A DO201AD

Taiwan Semiconductor Corporation

3829 0.00
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Tape & Box (TB) Automotive, AEC-Q101 RoHS Fast Recovery =< 500ns, > 200mA (Io) Standard Active Through Hole 100pF @ 4V, 1MHz 35 ns 5 µA @ 100 V 100 V 6A -55°C ~ 150°C 975 mV @ 6 A
HERAF1008G C0G

Таблицы данных

HERAF1008G C0G

HERAF1008G C0G

DIODE GEN PURP 10A ITO220AC

Taiwan Semiconductor Corporation

2297 0.00
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Tube RoHS Fast Recovery =< 500ns, > 200mA (Io) Standard Discontinued at Digi-Key Through Hole 60pF @ 4V, 1MHz 80 ns 10 µA @ 1000 V - 10A -55°C ~ 150°C 1.7 V @ 10 A
MBRF10100HC0G

Таблицы данных

MBRF10100HC0G

MBRF10100HC0G

DIODE SCHOTTKY 100V 10A ITO220AC

Taiwan Semiconductor Corporation

3995 0.00
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Tube Automotive, AEC-Q101 RoHS Fast Recovery =< 500ns, > 200mA (Io) Schottky Discontinued at Digi-Key Through Hole - - 100 µA @ 100 V 100 V 10A -55°C ~ 150°C 850 mV @ 10 A
1N4935G A0G

Таблицы данных

1N4935G A0G

1N4935G A0G

DIODE GEN PURP 200V 1A DO204AL

Taiwan Semiconductor Corporation

3086 0.00
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Tape & Box (TB) RoHS Fast Recovery =< 500ns, > 200mA (Io) Standard Active Through Hole 10pF @ 4V, 1MHz 200 ns 5 µA @ 200 V 200 V 1A -55°C ~ 150°C 1.2 V @ 1 A
1N5817A-01 1N5817A-01

1N5817A-01

DIODE SCHOTTKY 20V 1A DO41

Diodes Incorporated

3443 0.00
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Bulk RoHS Fast Recovery =< 500ns, > 200mA (Io) Schottky Obsolete Through Hole 110pF @ 4V, 1MHz - 1 mA @ 20 V 20 V 1A -65°C ~ 125°C 750 mV @ 3 A
UF1501S-B

Таблицы данных

UF1501S-B

UF1501S-B

DIODE GEN PURP 50V 1.5A DO41

Diodes Incorporated

3958 0.00
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Bulk RoHS Fast Recovery =< 500ns, > 200mA (Io) Standard Obsolete Through Hole 35pF @ 4V, 1MHz 50 ns 5 µA @ 50 V 50 V 1.5A -65°C ~ 150°C 1 V @ 1.5 A
SF63G A0G

Таблицы данных

SF63G A0G

SF63G A0G

DIODE GEN PURP 150V 6A DO201AD

Taiwan Semiconductor Corporation

3463 0.00
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Tape & Box (TB) RoHS Fast Recovery =< 500ns, > 200mA (Io) Standard Active Through Hole 100pF @ 4V, 1MHz 35 ns 5 µA @ 150 V 150 V 6A -55°C ~ 150°C 975 mV @ 6 A
HERAF1601G C0G

Таблицы данных

HERAF1601G C0G

HERAF1601G C0G

DIODE GEN PURP 50V 16A ITO220AC

Taiwan Semiconductor Corporation

3440 0.00
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Расследования

Tube RoHS Fast Recovery =< 500ns, > 200mA (Io) Standard Active Through Hole 150pF @ 4V, 1MHz 50 ns 10 µA @ 50 V 50 V 16A -55°C ~ 150°C 1 V @ 16 A
MBRF10150 C0G

Таблицы данных

MBRF10150 C0G

MBRF10150 C0G

DIODE SCHOTTKY 150V 10A ITO220AC

Taiwan Semiconductor Corporation

2811 0.00
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Tube RoHS Fast Recovery =< 500ns, > 200mA (Io) Schottky Discontinued at Digi-Key Through Hole - - 100 µA @ 150 V 150 V 10A -55°C ~ 150°C 1.05 V @ 10 A
1N4935GHA0G

Таблицы данных

1N4935GHA0G

1N4935GHA0G

DIODE GEN PURP 200V 1A DO204AL

Taiwan Semiconductor Corporation

3733 0.00
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Tape & Box (TB) Automotive, AEC-Q101 RoHS Fast Recovery =< 500ns, > 200mA (Io) Standard Active Through Hole 10pF @ 4V, 1MHz 200 ns 5 µA @ 200 V 200 V 1A -55°C ~ 150°C 1.2 V @ 1 A
N6051D N6051D

N6051D

DIODE

Diodes Incorporated

2234 0.00
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Расследования

Bulk RoHS - - Obsolete - - - - - - - -
UF1502S-B

Таблицы данных

UF1502S-B

UF1502S-B

DIODE GEN PURP 100V 1.5A DO41

Diodes Incorporated

3970 0.00
- +

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Расследования

Bulk RoHS Fast Recovery =< 500ns, > 200mA (Io) Standard Obsolete Through Hole 35pF @ 4V, 1MHz 50 ns 5 µA @ 100 V 100 V 1.5A -65°C ~ 150°C 1 V @ 1.5 A
SF63GHA0G

Таблицы данных

SF63GHA0G

SF63GHA0G

DIODE GEN PURP 150V 6A DO201AD

Taiwan Semiconductor Corporation

3150 0.00
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Расследования

Tape & Box (TB) Automotive, AEC-Q101 RoHS Fast Recovery =< 500ns, > 200mA (Io) Standard Active Through Hole 100pF @ 4V, 1MHz 35 ns 5 µA @ 150 V 150 V 6A -55°C ~ 150°C 975 mV @ 6 A
HERAF1602G C0G

Таблицы данных

HERAF1602G C0G

HERAF1602G C0G

DIODE GEN PURP 100V 16A ITO220AC

Taiwan Semiconductor Corporation

3839 0.00
- +

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Расследования

Tube RoHS Fast Recovery =< 500ns, > 200mA (Io) Standard Active Through Hole 150pF @ 4V, 1MHz 50 ns 10 µA @ 100 V 100 V 16A -55°C ~ 150°C 1 V @ 16 A
MBRF10150HC0G

Таблицы данных

MBRF10150HC0G

MBRF10150HC0G

DIODE SCHOTTKY 150V 10A ITO220AC

Taiwan Semiconductor Corporation

3745 0.00
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Расследования

Tube Automotive, AEC-Q101 RoHS Fast Recovery =< 500ns, > 200mA (Io) Schottky Active Through Hole - - 100 µA @ 150 V 150 V 10A -55°C ~ 150°C 1.05 V @ 10 A
1N4936G A0G

Таблицы данных

1N4936G A0G

1N4936G A0G

DIODE GEN PURP 400V 1A DO204AL

Taiwan Semiconductor Corporation

3208 0.00
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Расследования

Tape & Box (TB) RoHS Fast Recovery =< 500ns, > 200mA (Io) Standard Active Through Hole 10pF @ 4V, 1MHz 200 ns 5 µA @ 400 V 400 V 1A -55°C ~ 150°C 1.2 V @ 1 A
N6075D N6075D

N6075D

DIODE

Diodes Incorporated

2803 0.00
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Bulk RoHS - - Obsolete - - - - - - - -
UF1503S-B

Таблицы данных

UF1503S-B

UF1503S-B

DIODE GEN PURP 200V 1.5A DO41

Diodes Incorporated

2394 0.00
- +

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Расследования

Bulk RoHS Fast Recovery =< 500ns, > 200mA (Io) Standard Obsolete Through Hole 35pF @ 4V, 1MHz 50 ns 5 µA @ 200 V 200 V 1.5A -65°C ~ 150°C 1 V @ 1.5 A
Total 48193 Records«Prev1... 15491550155115521553155415551556...2410Next»
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