Таблицы данных Фотографии Производитель. Часть # Акции Цены А Packaging Series RoHS Speed Diode Type Part Status Mounting Type Package / Case Capacitance @ Vr, F Supplier Device Package Reverse Recovery Time (trr) Current - Reverse Leakage @ Vr Voltage - DC Reverse (Vr) (Max) Current - Average Rectified (Io) Operating Temperature - Junction Voltage - Forward (Vf) (Max) @ If
SF30DG-B

Таблицы данных

SF30DG-B

SF30DG-B

DIODE GEN PURP 200V 3A DO201AD

Diodes Incorporated

2078 0.00
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Расследования

Bulk RoHS Fast Recovery =< 500ns, > 200mA (Io) Standard Obsolete Through Hole 75pF @ 4V, 1MHz 35 ns 5 µA @ 200 V 200 V 3A -65°C ~ 150°C 950 mV @ 3 A
HERAF1004G C0G

Таблицы данных

HERAF1004G C0G

HERAF1004G C0G

DIODE GEN PURP 300V 10A ITO220AC

Taiwan Semiconductor Corporation

2280 0.00
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Расследования

Tube RoHS Fast Recovery =< 500ns, > 200mA (Io) Standard Discontinued at Digi-Key Through Hole 80pF @ 4V, 1MHz 50 ns 10 µA @ 300 V 300 V 10A -55°C ~ 150°C 1 V @ 10 A
MBR760 C0G

Таблицы данных

MBR760 C0G

MBR760 C0G

DIODE SCHOTTKY 60V 7.5A TO220AC

Taiwan Semiconductor Corporation

3166 0.00
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Tube RoHS Fast Recovery =< 500ns, > 200mA (Io) Schottky Active Through Hole - - 100 µA @ 60 V 60 V 7.5A -55°C ~ 150°C 750 mV @ 7.5 A
SS115L RFG

Таблицы данных

SS115L RFG

SS115L RFG

DIODE SCHOTTKY 150V 1A SUB SMA

Taiwan Semiconductor Corporation

2989 0.00
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Tape & Reel (TR) RoHS Fast Recovery =< 500ns, > 200mA (Io) Schottky Active Surface Mount - - 50 µA @ 150 V 150 V 1A -55°C ~ 150°C 900 mV @ 1 A
1N4933G A0G

Таблицы данных

1N4933G A0G

1N4933G A0G

DIODE GEN PURP 50V 1A DO204AL

Taiwan Semiconductor Corporation

3446 0.00
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Расследования

Tape & Box (TB) RoHS Fast Recovery =< 500ns, > 200mA (Io) Standard Active Through Hole 10pF @ 4V, 1MHz 200 ns 5 µA @ 50 V 50 V 1A -55°C ~ 150°C 1.2 V @ 1 A
PD3S140-7-01 PD3S140-7-01

PD3S140-7-01

DIODE SCHOTTKY 40V 1A POWERDI323

Diodes Incorporated

2262 0.00
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Tape & Reel (TR) RoHS Fast Recovery =< 500ns, > 200mA (Io) Schottky Obsolete Surface Mount 32pF @ 10V, 1MHz - 50 µA @ 40 V 40 V 1A -65°C ~ 150°C 550 mV @ 1 A
SF30FG-B

Таблицы данных

SF30FG-B

SF30FG-B

DIODE GEN PURP 300V 3A DO201AD

Diodes Incorporated

2974 0.00
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Расследования

Bulk RoHS Fast Recovery =< 500ns, > 200mA (Io) Standard Obsolete Through Hole 75pF @ 4V, 1MHz 40 ns 5 µA @ 300 V 300 V 3A -65°C ~ 150°C 1.3 V @ 3 A
HERAF1005G C0G

Таблицы данных

HERAF1005G C0G

HERAF1005G C0G

DIODE GEN PURP 400V 10A ITO220AC

Taiwan Semiconductor Corporation

2085 0.00
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Расследования

Tube RoHS Fast Recovery =< 500ns, > 200mA (Io) Standard Discontinued at Digi-Key Through Hole 80pF @ 4V, 1MHz 50 ns 10 µA @ 400 V 400 V 10A -55°C ~ 150°C 1.3 V @ 10 A
MBR760HC0G

Таблицы данных

MBR760HC0G

MBR760HC0G

DIODE SCHOTTKY 60V 7.5A TO220AC

Taiwan Semiconductor Corporation

3501 0.00
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Расследования

Tube Automotive, AEC-Q101 RoHS Fast Recovery =< 500ns, > 200mA (Io) Schottky Active Through Hole - - 100 µA @ 60 V 60 V 7.5A -55°C ~ 150°C 750 mV @ 7.5 A
1N4933GHA0G

Таблицы данных

1N4933GHA0G

1N4933GHA0G

DIODE GEN PURP 50V 1A DO204AL

Taiwan Semiconductor Corporation

3251 0.00
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Расследования

Tape & Box (TB) Automotive, AEC-Q101 RoHS Fast Recovery =< 500ns, > 200mA (Io) Standard Active Through Hole 10pF @ 4V, 1MHz 200 ns 5 µA @ 50 V 50 V 1A -55°C ~ 150°C 1.2 V @ 1 A
PDS1045-7 PDS1045-7

PDS1045-7

DIODE SCHOTTKY 45V 10A POWERDI5

Diodes Incorporated

3750 0.00
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Расследования

Tape & Reel (TR) RoHS Fast Recovery =< 500ns, > 200mA (Io) Schottky Obsolete Surface Mount - - 600 µA @ 45 V 45 V 10A -65°C ~ 150°C 510 mV @ 10 A
SF30GG-B

Таблицы данных

SF30GG-B

SF30GG-B

DIODE GEN PURP 400V 3A DO201AD

Diodes Incorporated

2997 0.00
- +

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Расследования

Bulk RoHS Fast Recovery =< 500ns, > 200mA (Io) Standard Obsolete Through Hole 75pF @ 4V, 1MHz 40 ns 5 µA @ 400 V 400 V 3A -65°C ~ 150°C 1.3 V @ 3 A
HERAF1006G C0G

Таблицы данных

HERAF1006G C0G

HERAF1006G C0G

DIODE GEN PURP 600V 10A ITO220AC

Taiwan Semiconductor Corporation

3735 0.00
- +

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Расследования

Tube RoHS Fast Recovery =< 500ns, > 200mA (Io) Standard Discontinued at Digi-Key Through Hole 60pF @ 4V, 1MHz 80 ns 10 µA @ 600 V 600 V 10A -55°C ~ 150°C 1.7 V @ 10 A
MBR790 C0G

Таблицы данных

MBR790 C0G

MBR790 C0G

DIODE SCHOTTKY 90V 7.5A TO220AC

Taiwan Semiconductor Corporation

3683 0.00
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Расследования

Tube RoHS Fast Recovery =< 500ns, > 200mA (Io) Schottky Active Through Hole - - 100 µA @ 90 V 90 V 7.5A -55°C ~ 150°C 920 mV @ 7.5 A
1N4934G A0G

Таблицы данных

1N4934G A0G

1N4934G A0G

DIODE GEN PURP 100V 1A DO204AL

Taiwan Semiconductor Corporation

3213 0.00
- +

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Расследования

Tape & Box (TB) RoHS Fast Recovery =< 500ns, > 200mA (Io) Standard Active Through Hole 10pF @ 4V, 1MHz 200 ns 5 µA @ 100 V 100 V 1A -55°C ~ 150°C 1.2 V @ 1 A
SD103BW-7-F-36 SD103BW-7-F-36

SD103BW-7-F-36

DIODE SCHOTTKY 30V 350MA SOD123

Diodes Incorporated

3014 0.00
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Расследования

Tape & Reel (TR) RoHS Fast Recovery =< 500ns, > 200mA (Io) Schottky Obsolete Surface Mount 28pF @ 0V, 1MHz 10 ns 5 µA @ 20 V 30 V 350mA (DC) -55°C ~ 150°C 600 mV @ 200 mA
SF30HG-B

Таблицы данных

SF30HG-B

SF30HG-B

DIODE GEN PURP 500V 3A DO201AD

Diodes Incorporated

3434 0.00
- +

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Расследования

Bulk RoHS Fast Recovery =< 500ns, > 200mA (Io) Standard Obsolete Through Hole 50pF @ 4V, 1MHz 50 ns 5 µA @ 500 V 500 V 3A -65°C ~ 150°C 1.5 V @ 3 A
HERAF1007G C0G

Таблицы данных

HERAF1007G C0G

HERAF1007G C0G

DIODE GEN PURP 800V 10A ITO220AC

Taiwan Semiconductor Corporation

2124 0.00
- +

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Расследования

Tube RoHS Fast Recovery =< 500ns, > 200mA (Io) Standard Discontinued at Digi-Key Through Hole 60pF @ 4V, 1MHz 80 ns 10 µA @ 800 V 800 V 10A -55°C ~ 150°C 1.7 V @ 10 A
MBR790HC0G

Таблицы данных

MBR790HC0G

MBR790HC0G

DIODE SCHOTTKY 90V 7.5A TO220AC

Taiwan Semiconductor Corporation

2321 0.00
- +

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Расследования

Tube Automotive, AEC-Q101 RoHS Fast Recovery =< 500ns, > 200mA (Io) Schottky Active Through Hole - - 100 µA @ 90 V 90 V 7.5A -55°C ~ 150°C 920 mV @ 7.5 A
1N4934GHA0G

Таблицы данных

1N4934GHA0G

1N4934GHA0G

DIODE GEN PURP 100V 1A DO204AL

Taiwan Semiconductor Corporation

3232 0.00
- +

Добавить

Расследования

Tape & Box (TB) Automotive, AEC-Q101 RoHS Fast Recovery =< 500ns, > 200mA (Io) Standard Active Through Hole 10pF @ 4V, 1MHz 200 ns 5 µA @ 100 V 100 V 1A -55°C ~ 150°C 1.2 V @ 1 A
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