Diodes-Rectifiers-Single,Discrete Semiconductor Products

Таблицы данных	Производитель. Часть #	Акции	А	Packaging	Series	RoHS	Speed	Diode Type	Part Status	Mounting Type	Package / Case	Capacitance @ Vr, F	Supplier Device Package	Reverse Recovery Time (trr)	Current - Reverse Leakage @ Vr	Voltage - DC Reverse (Vr) (Max)	Current - Average Rectified (Io)
Таблицы данных	1N5817HA0G DIODE SCHOTTKY 20V 1A DO204AL Taiwan Semiconductor Corporation	3198	- + Добавить Расследования	Tape & Box (TB)	Automotive, AEC-Q101	RoHS	Fast Recovery =< 500ns, > 200mA (Io)	Schottky	Active	Through Hole	55pF @ 4V, 1MHz	-	1 mA @ 20 V	20 V	1A	-55°C ~ 125°C	450 mV @ 1 A
Таблицы данных	MBRF1045 C0G DIODE SCHOTTKY 45V 10A ITO220AC Taiwan Semiconductor Corporation	3894	- + Добавить Расследования	Tube		RoHS	Fast Recovery =< 500ns, > 200mA (Io)	Schottky	Discontinued at Digi-Key	Through Hole	-	-	100 µA @ 45 V	45 V	10A	-55°C ~ 150°C	700 mV @ 10 A
	N7056A DIODE Diodes Incorporated	3876	- + Добавить Расследования	Bulk		RoHS	-	-	Obsolete	-	-	-	-	-	-	-	-
Таблицы данных	IDC08S120EX1SA3 DIODE SCHOTTKY 1.2KV 7.5A WAFER Infineon Technologies	3696	- + Добавить Расследования	Bulk	CoolSiC™+	RoHS	No Recovery Time > 500mA (Io)	Silicon Carbide Schottky	Obsolete	Surface Mount	380pF @ 1V, 1MHz	0 ns	180 µA @ 1200 V	1200 V	7.5A (DC)	-55°C ~ 175°C	1.8 V @ 7.5 A
Таблицы данных	SF67G A0G DIODE GEN PURP 500V 6A DO201AD Taiwan Semiconductor Corporation	2852	- + Добавить Расследования	Tape & Box (TB)		RoHS	Fast Recovery =< 500ns, > 200mA (Io)	Standard	Active	Through Hole	50pF @ 4V, 1MHz	35 ns	5 µA @ 500 V	500 V	6A	-55°C ~ 150°C	1.7 V @ 6 A
Таблицы данных	HERAF802G C0G DIODE GEN PURP 100V 8A ITO220AC Taiwan Semiconductor Corporation	3172	- + Добавить Расследования	Tube		RoHS	Fast Recovery =< 500ns, > 200mA (Io)	Standard	Active	Through Hole	80pF @ 4V, 1MHz	50 ns	10 µA @ 100 V	100 V	8A	-55°C ~ 150°C	1 V @ 8 A
Таблицы данных	1N5818 A0G DIODE SCHOTTKY 30V 1A DO204AL Taiwan Semiconductor Corporation	3303	- + Добавить Расследования	Tape & Box (TB)		RoHS	Fast Recovery =< 500ns, > 200mA (Io)	Schottky	Active	Through Hole	55pF @ 4V, 1MHz	-	1 mA @ 30 V	30 V	1A	-55°C ~ 125°C	550 mV @ 1 A
Таблицы данных	MBRF1045HC0G DIODE SCHOTTKY 45V 10A ITO220AC Taiwan Semiconductor Corporation	3002	- + Добавить Расследования	Tube	Automotive, AEC-Q101	RoHS	Fast Recovery =< 500ns, > 200mA (Io)	Schottky	Active	Through Hole	-	-	100 µA @ 45 V	45 V	10A	-55°C ~ 150°C	700 mV @ 10 A
Таблицы данных	IDC08S120EX7SA1 DIODE SCHOTTKY 1.2KV 7.5A WAFER Infineon Technologies	3099	- + Добавить Расследования	Bulk	CoolSiC™+	RoHS	No Recovery Time > 500mA (Io)	Silicon Carbide Schottky	Obsolete	Surface Mount	380pF @ 1V, 1MHz	0 ns	180 µA @ 1200 V	1200 V	7.5A (DC)	-55°C ~ 175°C	1.8 V @ 7.5 A
Таблицы данных	SF67GHA0G DIODE GEN PURP 500V 6A DO201AD Taiwan Semiconductor Corporation	2489	- + Добавить Расследования	Tape & Box (TB)	Automotive, AEC-Q101	RoHS	Fast Recovery =< 500ns, > 200mA (Io)	Standard	Active	Through Hole	50pF @ 4V, 1MHz	35 ns	5 µA @ 500 V	500 V	6A	-55°C ~ 150°C	1.7 V @ 6 A
Таблицы данных	HERAF803G C0G DIODE GEN PURP 200V 8A ITO220AC Taiwan Semiconductor Corporation	3148	- + Добавить Расследования	Tube		RoHS	Fast Recovery =< 500ns, > 200mA (Io)	Standard	Active	Through Hole	80pF @ 4V, 1MHz	50 ns	10 µA @ 200 V	200 V	8A	-55°C ~ 150°C	1 V @ 8 A
Таблицы данных	1N5818HA0G DIODE SCHOTTKY 30V 1A DO204AL Taiwan Semiconductor Corporation	2275	- + Добавить Расследования	Tape & Box (TB)	Automotive, AEC-Q101	RoHS	Fast Recovery =< 500ns, > 200mA (Io)	Schottky	Active	Through Hole	55pF @ 4V, 1MHz	-	1 mA @ 30 V	30 V	1A	-55°C ~ 125°C	550 mV @ 1 A
Таблицы данных	MBRF1050 C0G DIODE SCHOTTKY 50V 10A ITO220AC Taiwan Semiconductor Corporation	3929	- + Добавить Расследования	Tube		RoHS	Fast Recovery =< 500ns, > 200mA (Io)	Schottky	Active	Through Hole	-	-	100 µA @ 50 V	50 V	10A	-55°C ~ 150°C	800 mV @ 10 A
Таблицы данных	1A7TA DIODE GEN PURP 1KV 1A R-1 SMC Diode Solutions	2821	- + Добавить Расследования	Cut Tape (CT),Tape & Box (TB)		RoHS	Standard Recovery >500ns, > 200mA (Io)	Standard	Obsolete	Through Hole	15pF @ 4V, 1MHz	-	5 µA @ 1000 V	1000 V	1A	-65°C ~ 125°C	1 V @ 1 A
Таблицы данных	SF68GHA0G DIODE GEN PURP 600V 6A DO201AD Taiwan Semiconductor Corporation	2320	- + Добавить Расследования	Tape & Box (TB)	Automotive, AEC-Q101	RoHS	Fast Recovery =< 500ns, > 200mA (Io)	Standard	Active	Through Hole	50pF @ 4V, 1MHz	35 ns	5 µA @ 600 V	600 V	6A	-55°C ~ 150°C	1.7 V @ 6 A
Таблицы данных	HERAF804G C0G DIODE GEN PURP 300V 8A ITO220AC Taiwan Semiconductor Corporation	3133	- + Добавить Расследования	Tube		RoHS	Fast Recovery =< 500ns, > 200mA (Io)	Standard	Discontinued at Digi-Key	Through Hole	80pF @ 4V, 1MHz	50 ns	10 µA @ 300 V	300 V	8A	-55°C ~ 150°C	1 V @ 8 A
Таблицы данных	1N5819HA0G DIODE SCHOTTKY 40V 1A DO204AL Taiwan Semiconductor Corporation	2708	- + Добавить Расследования	Tape & Box (TB)	Automotive, AEC-Q101	RoHS	Fast Recovery =< 500ns, > 200mA (Io)	Schottky	Active	Through Hole	55pF @ 4V, 1MHz	-	1 mA @ 40 V	40 V	1A	-55°C ~ 125°C	600 mV @ 1 A
Таблицы данных	MBRF1050HC0G DIODE SCHOTTKY 50V 10A ITO220AC Taiwan Semiconductor Corporation	2140	- + Добавить Расследования	Tube	Automotive, AEC-Q101	RoHS	Fast Recovery =< 500ns, > 200mA (Io)	Schottky	Active	Through Hole	-	-	100 µA @ 50 V	50 V	10A	-55°C ~ 150°C	800 mV @ 10 A
Таблицы данных	1N5408TA DIODE GEN PURP 1KV 3A DO201AD SMC Diode Solutions	2575	- + Добавить Расследования	Cut Tape (CT),Tape & Box (TB)		RoHS	Standard Recovery >500ns, > 200mA (Io)	Standard	Obsolete	Through Hole	30pF @ 0V, 1MHz	-	5 µA @ 1000 V	1000 V	3A	-65°C ~ 175°C	1.2 V @ 3 A
Таблицы данных	SFT11G A0G DIODE GEN PURP 50V 1A TS-1 Taiwan Semiconductor Corporation	2455	- + Добавить Расследования	Tape & Box (TB)		RoHS	Fast Recovery =< 500ns, > 200mA (Io)	Standard	Active	Through Hole	20pF @ 4V, 1MHz	35 ns	5 µA @ 50 V	50 V	1A	-55°C ~ 150°C	950 mV @ 1 A

Total 48193 Records«Prev 1... 1551 1552 1553 155415551556 1557 1558...2410 Next»