Таблицы данных Фотографии Производитель. Часть # Акции Цены А Packaging Series RoHS Speed Diode Type Part Status Mounting Type Package / Case Capacitance @ Vr, F Supplier Device Package Reverse Recovery Time (trr) Current - Reverse Leakage @ Vr Voltage - DC Reverse (Vr) (Max) Current - Average Rectified (Io) Operating Temperature - Junction Voltage - Forward (Vf) (Max) @ If
SF10FG-B

Таблицы данных

SF10FG-B

SF10FG-B

DIODE GEN PURP 300V 1A DO41

Diodes Incorporated

3537 0.00
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Расследования

Bulk RoHS Fast Recovery =< 500ns, > 200mA (Io) Standard Obsolete Through Hole 75pF @ 4V, 1MHz 40 ns 10 µA @ 300 V 300 V 1A -65°C ~ 150°C 1.3 V @ 1 A
HERA804G C0G

Таблицы данных

HERA804G C0G

HERA804G C0G

DIODE GEN PURP 300V 8A TO220AC

Taiwan Semiconductor Corporation

3357 0.00
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Tube RoHS Fast Recovery =< 500ns, > 200mA (Io) Standard Discontinued at Digi-Key Through Hole 65pF @ 4V, 1MHz 50 ns 10 µA @ 300 V 300 V 8A -55°C ~ 150°C 1 V @ 8 A
SKL13BHR5G

Таблицы данных

SKL13BHR5G

SKL13BHR5G

DIODE SCHOTTKY 30V 1A DO214AA

Taiwan Semiconductor Corporation

2175 0.00
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Tape & Reel (TR) Automotive, AEC-Q101 RoHS Fast Recovery =< 500ns, > 200mA (Io) Schottky Discontinued at Digi-Key Surface Mount - - 200 µA @ 30 V 30 V 1A -55°C ~ 125°C 390 mV @ 1 A
1N4003GHA0G

Таблицы данных

1N4003GHA0G

1N4003GHA0G

DIODE GEN PURP 200V 1A DO204AL

Taiwan Semiconductor Corporation

2801 0.00
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Tape & Box (TB) Automotive, AEC-Q101 RoHS Standard Recovery >500ns, > 200mA (Io) Standard Active Through Hole 10pF @ 4V, 1MHz - 5 µA @ 200 V 200 V 1A -55°C ~ 150°C 1 V @ 1 A
ZLLS410TC

Таблицы данных

ZLLS410TC

ZLLS410TC

DIODE SCHOTTKY 10V 750MA SOD323

Diodes Incorporated

3482 0.00
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Tape & Reel (TR) RoHS Fast Recovery =< 500ns, > 200mA (Io) Schottky Obsolete Surface Mount 37pF @ 10V, 1MHz 3 ns 6 µA @ 10 V 10 V 750mA (DC) - 580 mV @ 1 A
SF10GG-B

Таблицы данных

SF10GG-B

SF10GG-B

DIODE GEN PURP 400V 1A DO41

Diodes Incorporated

3005 0.00
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Bulk RoHS Fast Recovery =< 500ns, > 200mA (Io) Standard Obsolete Through Hole 75pF @ 4V, 1MHz 40 ns 10 µA @ 400 V 400 V 1A -65°C ~ 150°C 1.3 V @ 1 A
HERA805G C0G

Таблицы данных

HERA805G C0G

HERA805G C0G

DIODE GEN PURP 400V 8A TO220AC

Taiwan Semiconductor Corporation

2582 0.00
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Расследования

Tube RoHS Fast Recovery =< 500ns, > 200mA (Io) Standard Discontinued at Digi-Key Through Hole 65pF @ 4V, 1MHz 50 ns 10 µA @ 400 V 400 V 8A -55°C ~ 150°C 1.3 V @ 8 A
SS110HR3G

Таблицы данных

SS110HR3G

SS110HR3G

DIODE SCHOTTKY 100V 1A DO214AC

Taiwan Semiconductor Corporation

3895 0.00
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Tape & Reel (TR) Automotive, AEC-Q101 RoHS Fast Recovery =< 500ns, > 200mA (Io) Schottky Discontinued at Digi-Key Surface Mount - - 100 µA @ 100 V 100 V 1A -55°C ~ 125°C 500 mV @ 1 A
1N4004G A0G

Таблицы данных

1N4004G A0G

1N4004G A0G

DIODE GEN PURP 400V 1A DO204AL

Taiwan Semiconductor Corporation

3726 0.00
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Расследования

Tape & Box (TB) RoHS Standard Recovery >500ns, > 200mA (Io) Standard Active Through Hole 10pF @ 4V, 1MHz - 5 µA @ 400 V 400 V 1A -55°C ~ 150°C 1 V @ 1 A
BAS40-7-F-31 BAS40-7-F-31

BAS40-7-F-31

DIODE SCHOTTKY 40V 200MA SOT23-3

Diodes Incorporated

2947 0.00
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Расследования

Tape & Reel (TR) RoHS Fast Recovery =< 500ns, > 200mA (Io) Schottky Obsolete Surface Mount 5pF @ 0V, 1MHz 5 ns 200 nA @ 30 V 40 V 200mA (DC) -55°C ~ 125°C 1 V @ 40 mA
SF10HG-B

Таблицы данных

SF10HG-B

SF10HG-B

DIODE GEN PURP 500V 1A DO41

Diodes Incorporated

3555 0.00
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Расследования

Bulk RoHS Fast Recovery =< 500ns, > 200mA (Io) Standard Obsolete Through Hole 50pF @ 4V, 1MHz 50 ns 10 µA @ 500 V 500 V 1A -65°C ~ 150°C 1.5 V @ 1 A
HERA806G C0G

Таблицы данных

HERA806G C0G

HERA806G C0G

DIODE GEN PURP 600V 8A TO220AC

Taiwan Semiconductor Corporation

2937 0.00
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Расследования

Tube RoHS Fast Recovery =< 500ns, > 200mA (Io) Standard Discontinued at Digi-Key Through Hole 55pF @ 4V, 1MHz 80 ns 10 µA @ 600 V 600 V 8A -55°C ~ 150°C 1.7 V @ 8 A
MBR735HC0G

Таблицы данных

MBR735HC0G

MBR735HC0G

DIODE SCHOTTKY 35V 7.5A TO220AC

Taiwan Semiconductor Corporation

2019 0.00
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Расследования

Tube Automotive, AEC-Q101 RoHS Fast Recovery =< 500ns, > 200mA (Io) Schottky Active Through Hole - - 100 µA @ 35 V 35 V 7.5A -55°C ~ 150°C 840 mV @ 15 A
SS110L RFG

Таблицы данных

SS110L RFG

SS110L RFG

DIODE SCHOTTKY 100V 1A SUB SMA

Taiwan Semiconductor Corporation

3285 0.00
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Расследования

Tape & Reel (TR) RoHS Fast Recovery =< 500ns, > 200mA (Io) Schottky Active Surface Mount - - 50 µA @ 100 V 100 V 1A -55°C ~ 150°C 800 mV @ 1 A
1N4004GHA0G

Таблицы данных

1N4004GHA0G

1N4004GHA0G

DIODE GEN PURP 400V 1A DO204AL

Taiwan Semiconductor Corporation

2368 0.00
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Расследования

Tape & Box (TB) Automotive, AEC-Q101 RoHS Standard Recovery >500ns, > 200mA (Io) Standard Active Through Hole 10pF @ 4V, 1MHz - 5 µA @ 400 V 400 V 1A -55°C ~ 150°C 1 V @ 1 A
BAT760-7-36 BAT760-7-36

BAT760-7-36

DIODE SCHOTTKY 30V 1A SOD323

Diodes Incorporated

3987 0.00
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Расследования

Tape & Reel (TR) RoHS Fast Recovery =< 500ns, > 200mA (Io) Schottky Obsolete Surface Mount 25pF @ 5V, 1MHz - 50 µA @ 15 V 30 V 1A -65°C ~ 150°C 550 mV @ 1 A
SF10JG-B

Таблицы данных

SF10JG-B

SF10JG-B

DIODE GEN PURP 600V 1A DO41

Diodes Incorporated

2827 0.00
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Расследования

Bulk RoHS Fast Recovery =< 500ns, > 200mA (Io) Standard Obsolete Through Hole 50pF @ 4V, 1MHz 50 ns 10 µA @ 600 V 600 V 1A -65°C ~ 150°C 1.5 V @ 1 A
HERA807G C0G

Таблицы данных

HERA807G C0G

HERA807G C0G

DIODE GEN PURP 800V 8A TO220AC

Taiwan Semiconductor Corporation

2176 0.00
- +

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Расследования

Tube RoHS Fast Recovery =< 500ns, > 200mA (Io) Standard Discontinued at Digi-Key Through Hole 55pF @ 4V, 1MHz 80 ns 10 µA @ 800 V 800 V 8A -55°C ~ 150°C 1.7 V @ 8 A
MBR745 C0G

Таблицы данных

MBR745 C0G

MBR745 C0G

DIODE SCHOTTKY 45V 7.5A TO220AC

Taiwan Semiconductor Corporation

2397 0.00
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Расследования

Tube RoHS Fast Recovery =< 500ns, > 200mA (Io) Schottky Discontinued at Digi-Key Through Hole - - 100 µA @ 45 V 45 V 7.5A -55°C ~ 150°C 840 mV @ 15 A
SS110LHR3G

Таблицы данных

SS110LHR3G

SS110LHR3G

DIODE SCHOTTKY 100V 1A SUB SMA

Taiwan Semiconductor Corporation

3460 0.00
- +

Добавить

Расследования

Tape & Reel (TR) Automotive, AEC-Q101 RoHS Fast Recovery =< 500ns, > 200mA (Io) Schottky Active Surface Mount - - 50 µA @ 100 V 100 V 1A -55°C ~ 150°C 800 mV @ 1 A
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