Таблицы данных Фотографии Производитель. Часть # Акции Цены А Packaging Series ProductStatus FETType Technology DraintoSourceVoltage(Vdss) Current-ContinuousDrain(Id)@25°C DriveVoltage(MaxRdsOnMinRdsOn) RdsOn(Max)@IdVgs Vgs(th)(Max)@Id GateCharge(Qg)(Max)@Vgs Vgs(Max) InputCapacitance(Ciss)(Max)@Vds FETFeature PowerDissipation(Max) OperatingTemperature MountingType
NTMFS4C09NBT1G NTMFS4C09NBT1G

NTMFS4C09NBT1G

MOSFET N-CH 30V SO8FL

onsemi

3405 1.11
- +

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Tape & Reel (TR),Cut Tape (CT),Digi-Reel® - Active N-Channel MOSFET (Metal Oxide) 30 V - - - - - - 1252 pF @ 15 V - 760mW (Ta) -55°C ~ 150°C (TJ) Surface Mount
NTMFS4C09NAT1G

Таблицы данных

NTMFS4C09NAT1G

NTMFS4C09NAT1G

MOSFET N-CH 30V 9A/52A 5DFN

onsemi

1500 1.11
- +

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Tape & Reel (TR),Cut Tape (CT),Digi-Reel®,Bulk - Active N-Channel MOSFET (Metal Oxide) 30 V 9A (Ta), 52A (Tc) - 5.8mOhm @ 30A, 10V 2.1V @ 250µA 1.9 nC @ 4.5 V - 1252 pF @ 15 V - 760mW (Ta) -55°C ~ 150°C (TJ) Surface Mount
FQB13N06LTM

Таблицы данных

FQB13N06LTM

FQB13N06LTM

MOSFET N-CH 60V 13.6A D2PAK

Fairchild Semiconductor

2468 0.00
- +

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Bulk QFET® Obsolete N-Channel MOSFET (Metal Oxide) 60 V 13.6A (Tc) 5V, 10V 110mOhm @ 6.8A, 10V 2.5V @ 250µA 6.4 nC @ 5 V ±20V 350 pF @ 25 V - 3.75W (Ta), 45W (Tc) -55°C ~ 175°C (TJ) Surface Mount
FQPF6N25

Таблицы данных

FQPF6N25

FQPF6N25

MOSFET N-CH 250V 4A TO220F

Fairchild Semiconductor

2124 0.00
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Tube QFET® Obsolete N-Channel MOSFET (Metal Oxide) 250 V 4A (Tc) 10V 1Ohm @ 2A, 10V 5V @ 250µA 8.5 nC @ 10 V ±30V 300 pF @ 25 V - 37W (Tc) -55°C ~ 150°C (TJ) Through Hole
FQB2P25TM

Таблицы данных

FQB2P25TM

FQB2P25TM

MOSFET P-CH 250V 2.3A D2PAK

Fairchild Semiconductor

3216 0.00
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Bulk QFET® Obsolete P-Channel MOSFET (Metal Oxide) 250 V 2.3A (Tc) 10V 4Ohm @ 1.15A, 10V 5V @ 250µA 8.5 nC @ 10 V ±30V 250 pF @ 25 V - 3.13W (Ta), 52W (Tc) -55°C ~ 150°C (TJ) Surface Mount
FQP10N20CTSTU

Таблицы данных

FQP10N20CTSTU

FQP10N20CTSTU

MOSFET N-CH 200V 9.5A TO220-3

Fairchild Semiconductor

3707 0.00
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Tube QFET® Obsolete N-Channel MOSFET (Metal Oxide) 200 V 9.5A (Tc) 10V 360mOhm @ 4.75A, 10V 4V @ 250µA 26 nC @ 10 V ±30V 510 pF @ 25 V - 72W (Tc) -55°C ~ 150°C (TJ) Through Hole
FDP8876

Таблицы данных

FDP8876

FDP8876

MOSFET N-CH 30V 70A TO220-3

Fairchild Semiconductor

2888 0.00
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Tube PowerTrench® Obsolete N-Channel MOSFET (Metal Oxide) 30 V 70A (Tc) 4.5V, 10V 8.7mOhm @ 40A, 10V 2.5V @ 250µA 45 nC @ 10 V ±20V 1700 pF @ 15 V - 70W (Tc) -55°C ~ 175°C (TJ) Through Hole
RM80N100T2 RM80N100T2

RM80N100T2

MOSFET N-CH 100V 80A TO220-3

Rectron USA

3319 0.51
- +

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Tube - Active N-Channel MOSFET (Metal Oxide) 100 V 80A (Tc) 4.5V, 10V 8.5mOhm @ 40A, 10V 2.2V @ 250µA - ±20V 5480 pF @ 50 V - 125W (Tc) -55°C ~ 175°C (TJ) Through Hole
RM120N40T2 RM120N40T2

RM120N40T2

MOSFET N-CH 40V 120A TO220-3

Rectron USA

3931 0.51
- +

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Tube - Active N-Channel MOSFET (Metal Oxide) 40 V 120A (Tc) 4.5V, 10V 4mOhm @ 20A, 10V 2.5V @ 250µA - ±20V 5400 pF @ 20 V - 130W (Tc) -55°C ~ 175°C (TJ) Through Hole
PJF60R190E_T0_00001

Таблицы данных

PJF60R190E_T0_00001

PJF60R190E_T0_00001

600V N-CHANNEL SUPER JUNCTION MO

Panjit International Inc.

3699 0.51
- +

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Tube - Active N-Channel MOSFET (Metal Oxide) 600 V 2.1A (Ta), 20A (Tc) 10V 196mOhm @ 10A, 10V 4V @ 250µA 62 nC @ 10 V ±20V 1421 pF @ 25 V - 1.04W (Ta), 68W (Tc) -55°C ~ 150°C (TJ) Through Hole
FDMS7680

Таблицы данных

FDMS7680

FDMS7680

MOSFET N-CH 30V 14A/28A 8PQFN

onsemi

2702 0.31
- +

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Tape & Reel (TR),Cut Tape (CT),Digi-Reel® PowerTrench® Active N-Channel MOSFET (Metal Oxide) 30 V 14A (Ta), 28A (Tc) 4.5V, 10V 6.9mOhm @ 14A, 10V 3V @ 250µA 28 nC @ 10 V ±20V 1850 pF @ 15 V - 2.5W (Ta), 33W (Tc) -55°C ~ 150°C (TJ) Surface Mount
PJQ5425_R2_00001 PJQ5425_R2_00001

PJQ5425_R2_00001

30V P-CHANNEL ENHANCEMENT MODE M

Panjit International Inc.

2411 1.21
- +

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Tape & Reel (TR),Cut Tape (CT),Digi-Reel® - Active P-Channel MOSFET (Metal Oxide) 30 V 15.8A (Ta), 90A (Tc) 4.5V, 10V 4.5mOhm @ 20A, 10V 2.5V @ 250µA 107 nC @ 10 V ±20V 6067 pF @ 25 V - 2W (Ta), 60W (Tc) -55°C ~ 150°C (TJ) Surface Mount
SQJ186EP-T1_GE3

Таблицы данных

SQJ186EP-T1_GE3

SQJ186EP-T1_GE3

AUTOMOTIVE N-CHANNEL 80 V (D-S)

Vishay Siliconix

3952 1.13
- +

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Tape & Reel (TR),Cut Tape (CT),Digi-Reel® Automotive, AEC-Q101, TrenchFET® Active N-Channel MOSFET (Metal Oxide) 80 V 60A (Tc) 10V 15mOhm @ 20A, 10V 3.5V @ 250µA 36 nC @ 10 V ±20V 1942 pF @ 25 V - 135W (Tc) -55°C ~ 175°C (TJ) Surface Mount
SQJ170ELP-T1_GE3

Таблицы данных

SQJ170ELP-T1_GE3

SQJ170ELP-T1_GE3

N-CHANNEL 60-V (D-S) 175C MOSFET

Vishay Siliconix

2526 1.13
- +

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Tape & Reel (TR),Cut Tape (CT),Digi-Reel® - Active N-Channel MOSFET (Metal Oxide) 60 V 63A (Tc) 4.5V, 10V 16.3mOhm @ 10A, 10V 2.5V @ 250µA 12 nC @ 10 V ±20V 1165 pF @ 25 V - 136W (Tc) -55°C ~ 175°C (TJ) Surface Mount
MCQ15N10YA-TP

Таблицы данных

MCQ15N10YA-TP

MCQ15N10YA-TP

MOSFET N-CH DFN3333

Micro Commercial Co

2773 1.21
- +

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Tape & Reel (TR),Cut Tape (CT),Digi-Reel® - Active N-Channel MOSFET (Metal Oxide) 100 V 15A (Ta) 4.5V, 10V 9.5mOhm @ 10A, 10V 3V @ 250µA 32 nC @ 10 V ±20V 2270 pF @ 50 V - 3.8W (Tj) -55°C ~ 150°C (TJ) Surface Mount
RD3G01BATTL1

Таблицы данных

RD3G01BATTL1

RD3G01BATTL1

PCH -40V -15A POWER MOSFET - RD3

Rohm Semiconductor

2288 1.21
- +

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Tape & Reel (TR),Cut Tape (CT),Digi-Reel® - Active P-Channel MOSFET (Metal Oxide) 40 V 15A (Ta) 4.5V, 10V 39mOhm @ 15A, 10V 2.5V @ 1mA 19.3 nC @ 10 V ±20V 1030 pF @ 20 V - 25W (Ta) 150°C (TJ) Surface Mount
NVMFS6H864NLT1G

Таблицы данных

NVMFS6H864NLT1G

NVMFS6H864NLT1G

MOSFET N-CH 80V 7A/22A 5DFN

onsemi

3122 1.13
- +

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Tape & Reel (TR),Cut Tape (CT),Digi-Reel® Automotive, AEC-Q101 Active N-Channel MOSFET (Metal Oxide) 80 V 7A (Ta), 22A (Tc) 4.5V, 10V 29mOhm @ 5A, 10V 2V @ 20µA 9 nC @ 10 V ±20V 431 pF @ 40 V - 3.5W (Ta), 33W (Tc) -55°C ~ 175°C (TJ) Surface Mount
UPA2815T1S-E2-AT

Таблицы данных

UPA2815T1S-E2-AT

UPA2815T1S-E2-AT

MOSFET P-CH 30V 21A 8HWSON

Renesas Electronics America Inc

2745 0.52
- +

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Tape & Reel (TR) - Active P-Channel MOSFET (Metal Oxide) 30 V 21A (Tc) 4.5V, 10V 11mOhm @ 21A, 10V - 47 nC @ 10 V ±20V 1760 pF @ 10 V - 1.5W (Ta) 150°C (TJ) Surface Mount
RJK5002DPD-00#J2

Таблицы данных

RJK5002DPD-00#J2

RJK5002DPD-00#J2

MOSFET N-CH 500V 2.4A MP3A

Renesas Electronics America Inc

2360 0.52
- +

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Tape & Reel (TR) - Active N-Channel MOSFET (Metal Oxide) 500 V 2.4A (Ta) 10V 5Ohm @ 1.2A, 10V - 6.7 nC @ 10 V ±30V 165 pF @ 25 V - 30W (Tc) 150°C (TJ) Surface Mount
PJD45N06A-AU_L2_000A1 PJD45N06A-AU_L2_000A1

PJD45N06A-AU_L2_000A1

60V N-CHANNEL ENHANCEMENT MODE M

Panjit International Inc.

3564 1.22
- +

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Tape & Reel (TR),Cut Tape (CT),Digi-Reel® - Active N-Channel MOSFET (Metal Oxide) 60 V 45A (Tc) 4.5V, 10V 12mOhm @ 20A, 10V 2.5V @ 250µA 39 nC @ 10 V ±20V 2256 pF @ 25 V - 75W (Tc) -55°C ~ 175°C (TJ) Surface Mount
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