Грузовой вагон ( )| Таблицы данных | Фотографии | Производитель. Часть # | Акции | Цены | А | Packaging | Series | ProductStatus | FETType | Technology | DraintoSourceVoltage(Vdss) | Current-ContinuousDrain(Id)@25°C | DriveVoltage(MaxRdsOnMinRdsOn) | RdsOn(Max)@IdVgs | Vgs(th)(Max)@Id | GateCharge(Qg)(Max)@Vgs | Vgs(Max) | InputCapacitance(Ciss)(Max)@Vds | FETFeature | PowerDissipation(Max) | OperatingTemperature | MountingType |
|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|
Таблицы данных |
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SQJ415EP-T1_BE3P-CHANNEL 40-V (D-S) 175C MOSFET |
3766 | 1.05 |
ДобавитьРасследования |
Tape & Reel (TR),Cut Tape (CT),Digi-Reel® | Automotive, AEC-Q101, TrenchFET® | Active | P-Channel | MOSFET (Metal Oxide) | 40 V | 30A (Tc) | 4.5V, 10V | 14mOhm @ 10A, 10V | 2.5V @ 250µA | 95 nC @ 10 V | ±20V | 6000 pF @ 25 V | - | 45W (Tc) | -55°C ~ 175°C (TJ) | Surface Mount |
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TPCP8107,LFMOSFET P-CH 40V 8A PS-8 |
2746 | 0.69 |
ДобавитьРасследования |
Tape & Reel (TR),Cut Tape (CT),Digi-Reel® | U-MOSVI | Active | P-Channel | MOSFET (Metal Oxide) | 40 V | 8A (Ta) | 6V, 10V | 18mOhm @ 4A, 10V | 3V @ 1mA | 44.6 nC @ 10 V | +10V, -20V | 2160 pF @ 10 V | - | 1W (Ta) | 175°C | Surface Mount |
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Таблицы данных |
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BSO110N03MSGXUMA1MOSFET N-CH 30V 10A 8DSO |
2500 | 0.48 |
ДобавитьРасследования |
Tape & Reel (TR) | OptiMOS™ | Active | N-Channel | MOSFET (Metal Oxide) | 30 V | 10A (Ta) | 4.5V, 10V | 11mOhm @ 12.1A, 10V | 2V @ 250µA | 20 nC @ 10 V | ±20V | 1500 pF @ 15 V | - | 1.56W (Ta) | -55°C ~ 150°C (TJ) | Surface Mount |
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STTFS010N10MCLPTNG 100V LL |
2430 | 1.05 |
ДобавитьРасследования |
Tape & Reel (TR),Cut Tape (CT),Digi-Reel® | - | Active | - | - | - | 10.7A (Ta), 50A (Tc) | - | - | - | - | - | - | - | - | - | - |
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Таблицы данных |
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SI2325DS-T1-E3MOSFET P-CH 150V 530MA SOT23-3 |
3912 | 1.05 |
ДобавитьРасследования |
Tape & Reel (TR),Cut Tape (CT),Digi-Reel® | TrenchFET® | Active | P-Channel | MOSFET (Metal Oxide) | 150 V | 530mA (Ta) | 6V, 10V | 1.2Ohm @ 500mA, 10V | 4.5V @ 250µA | 12 nC @ 10 V | ±20V | 510 pF @ 25 V | - | 750mW (Ta) | -55°C ~ 150°C (TJ) | Surface Mount |
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Таблицы данных |
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SI2325DS-T1-GE3MOSFET P-CH 150V 530MA SOT23-3 |
2273 | 1.05 |
ДобавитьРасследования |
Tape & Reel (TR),Cut Tape (CT),Digi-Reel® | TrenchFET® | Active | P-Channel | MOSFET (Metal Oxide) | 150 V | 530mA (Ta) | 6V, 10V | 1.2Ohm @ 500mA, 10V | 4.5V @ 250µA | 12 nC @ 10 V | ±20V | 510 pF @ 25 V | - | 750mW (Ta) | -55°C ~ 150°C (TJ) | Surface Mount |
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Таблицы данных |
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SI3483CDV-T1-GE3MOSFET P-CH 30V 8A 6TSOP |
6000 | 1.05 |
ДобавитьРасследования |
Tape & Reel (TR),Cut Tape (CT),Digi-Reel® | TrenchFET® | Active | P-Channel | MOSFET (Metal Oxide) | 30 V | 8A (Tc) | 4.5V, 10V | 34mOhm @ 6.1A, 10V | 3V @ 250µA | 33 nC @ 10 V | ±20V | 1000 pF @ 15 V | - | 2W (Ta), 4.2W (Tc) | -55°C ~ 150°C (TJ) | Surface Mount |
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SIR588DP-T1-RE3N-CHANNEL 80 V (D-S) MOSFET POWE |
3625 | 1.05 |
ДобавитьРасследования |
Tape & Reel (TR),Cut Tape (CT),Digi-Reel® | TrenchFET® Gen V | Active | N-Channel | MOSFET (Metal Oxide) | 80 V | 17.2A (Ta), 59.5A (Tc) | 7.5V, 10V | 8mOhm @ 10A, 10V | 4V @ 250µA | 28.5 nC @ 10 V | ±20V | 1380 pF @ 40 V | - | 5W (Ta), 59.5W (Tc) | -55°C ~ 150°C (TJ) | Surface Mount |
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Таблицы данных |
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SI2337DS-T1-BE3P-CHANNEL 80-V (D-S) MOSFET |
3309 | 1.05 |
ДобавитьРасследования |
Tape & Reel (TR),Cut Tape (CT),Digi-Reel® | - | Active | P-Channel | MOSFET (Metal Oxide) | 80 V | 1.2A (Ta), 2.2A (Tc) | 6V, 10V | 270mOhm @ 1.2A, 10V | 4V @ 250µA | 17 nC @ 10 V | ±20V | 500 pF @ 40 V | - | 760mW (Ta), 2.5W (Tc) | -55°C ~ 150°C (TJ) | Surface Mount |
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Таблицы данных |
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SI2325DS-T1-BE3P-CHANNEL 150-V (D-S) MOSFET |
3669 | 1.05 |
ДобавитьРасследования |
Tape & Reel (TR),Cut Tape (CT),Digi-Reel® | - | Active | P-Channel | MOSFET (Metal Oxide) | 150 V | 530mA (Ta) | 6V, 10V | 1.2Ohm @ 500mA, 10V | 4.5V @ 250µA | 12 nC @ 10 V | ±20V | 510 pF @ 25 V | - | 750mW (Ta) | -55°C ~ 150°C (TJ) | Surface Mount |
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Таблицы данных |
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SQJ464EP-T1_BE3N-CHANNEL 60-V (D-S) 175C MOSFET |
2419 | 1.05 |
ДобавитьРасследования |
Tape & Reel (TR),Cut Tape (CT),Digi-Reel® | Automotive, AEC-Q101, TrenchFET® | Active | N-Channel | MOSFET (Metal Oxide) | 60 V | 32A (Tc) | 4.5V, 10V | 17mOhm @ 7.1A, 10V | 2.5V @ 250µA | 44 nC @ 10 V | ±20V | 2086 pF @ 30 V | - | 45W (Tc) | -55°C ~ 175°C (TJ) | Surface Mount |
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Таблицы данных |
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PXP3R7-12QUJPXP3R7-12QU/SOT8002/MLPAK33 |
3086 | 1.12 |
ДобавитьРасследования |
Tape & Reel (TR),Cut Tape (CT),Digi-Reel® | - | Active | P-Channel | MOSFET (Metal Oxide) | 12 V | 18.7A (Ta), 98.6A (Tc) | 1.8V, 4.5V | 3.7mOhm @ 18.6A, 4.5V | 900mV @ 250µA | 110 nC @ 4.5 V | ±8V | 6500 pF @ 6 V | - | 1.8W (Ta), 50W (Tc) | -55°C ~ 150°C (TJ) | Surface Mount |
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Таблицы данных |
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NDF02N60ZGMOSFET N-CH 600V 2.4A TO220FP |
2174 | 0.27 |
ДобавитьРасследования |
Tube | - | Obsolete | N-Channel | MOSFET (Metal Oxide) | 600 V | 2.4A (Tc) | 10V | 4.8Ohm @ 1A, 10V | 4.5V @ 50µA | 10.1 nC @ 10 V | ±30V | 274 pF @ 25 V | - | 24W (Tc) | -55°C ~ 150°C (TJ) | Through Hole |
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Таблицы данных |
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HUF75321D3MOSFET N-CH 55V 20A IPAK |
3613 | 0.00 |
ДобавитьРасследования |
Tube | UltraFET™ | Obsolete | N-Channel | MOSFET (Metal Oxide) | 55 V | 20A (Tc) | 10V | 36mOhm @ 20A, 10V | 4V @ 250µA | 44 nC @ 20 V | ±20V | 680 pF @ 25 V | - | 93W (Tc) | -55°C ~ 175°C (TJ) | Through Hole |
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Таблицы данных |
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FQPF5N15MOSFET N-CH 150V 4.2A TO220F |
3542 | 0.00 |
ДобавитьРасследования |
Tube | QFET® | Obsolete | N-Channel | MOSFET (Metal Oxide) | 150 V | 4.2A (Tc) | 10V | 800mOhm @ 2.1A, 10V | 4V @ 250µA | 7 nC @ 10 V | ±25V | 230 pF @ 25 V | - | 32W (Tc) | -55°C ~ 175°C (TJ) | Through Hole |
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Таблицы данных |
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IRF7413PBFMOSFET N-CH 30V 13A 8SO |
2873 | 0.27 |
ДобавитьРасследования |
Tube | HEXFET® | Obsolete | N-Channel | MOSFET (Metal Oxide) | 30 V | 13A (Ta) | 4.5V, 10V | 11mOhm @ 7.3A, 10V | 3V @ 250µA | 79 nC @ 10 V | ±20V | 1800 pF @ 25 V | - | 2.5W (Ta) | -55°C ~ 150°C (TJ) | Surface Mount |
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Таблицы данных |
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FQPF7N10MOSFET N-CH 100V 5.5A TO220F |
3738 | 0.00 |
ДобавитьРасследования |
Tube | QFET® | Obsolete | N-Channel | MOSFET (Metal Oxide) | 100 V | 5.5A (Tc) | 10V | 350mOhm @ 2.75A, 10V | 4V @ 250µA | 7.5 nC @ 10 V | ±25V | 250 pF @ 25 V | - | 23W (Tc) | -55°C ~ 175°C (TJ) | Through Hole |
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PJD60R980E_L2_00001600V N-CHANNEL SUPER JUNCTION MO |
2071 | 1.14 |
ДобавитьРасследования |
Tape & Reel (TR),Cut Tape (CT),Digi-Reel® | - | Active | N-Channel | MOSFET (Metal Oxide) | 600 V | 4A (Tc) | 10V | 980mOhm @ 1.5A, 10V | 4V @ 250µA | 14.4 nC @ 10 V | ±20V | 300 pF @ 25 V | - | 58W (Tc) | -55°C ~ 150°C (TJ) | Surface Mount |
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Таблицы данных |
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BUK9535-55A127N-CHANNEL POWER MOSFET |
3140 | 0.00 |
ДобавитьРасследования |
Bulk | TrenchMOS™ | Active | N-Channel | MOSFET (Metal Oxide) | 55 V | 34A (Tc) | 4.5V, 10V | 32mOhm @ 25A, 10V | 2V @ 1mA | - | ±10V | 1173 pF @ 25 V | - | 85W (Tc) | -55°C ~ 175°C (TJ) | Through Hole |
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Таблицы данных |
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IRF6205.0A 200V 0.800 OHM N-CHANNEL |
3490 | 0.00 |
ДобавитьРасследования |
Bulk | PowerMESH™ II | Active | N-Channel | MOSFET (Metal Oxide) | 200 V | 6A (Tc) | 10V | 800mOhm @ 3A, 10V | 4V @ 250µA | 27 nC @ 10 V | ±20V | 350 pF @ 25 V | - | 70W (Tc) | -65°C ~ 150°C (TJ) | Through Hole |
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