Таблицы данных Фотографии Производитель. Часть # Акции Цены А Packaging Series ProductStatus FETType Technology DraintoSourceVoltage(Vdss) Current-ContinuousDrain(Id)@25°C DriveVoltage(MaxRdsOnMinRdsOn) RdsOn(Max)@IdVgs Vgs(th)(Max)@Id GateCharge(Qg)(Max)@Vgs Vgs(Max) InputCapacitance(Ciss)(Max)@Vds FETFeature PowerDissipation(Max) OperatingTemperature MountingType
MCH6437-P-TL-E MCH6437-P-TL-E

MCH6437-P-TL-E

MOSFET N-CH 20V 7A MCPH6

Fairchild Semiconductor

3203 0.00
- +

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Расследования

Bulk - Active - - - 7A (Tj) - - - - - - - - - Surface Mount
BUK6217-55C,118

Таблицы данных

BUK6217-55C,118

BUK6217-55C,118

MOSFET N-CH 55V 44A DPAK

NXP USA Inc.

2412 0.26
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Расследования

Bulk Automotive, AEC-Q101, TrenchMOS™ Active N-Channel MOSFET (Metal Oxide) 55 V 44A (Ta) - 19mOhm @ 12A, 10V 2.8V @ 1mA 33.8 nC @ 10 V ±16V 1950 pF @ 25 V - 80W (Ta) -55°C ~ 175°C (TJ) Surface Mount
PXP6R1-30QLJ

Таблицы данных

PXP6R1-30QLJ

PXP6R1-30QLJ

PXP6R1-30QL/SOT8002/MLPAK33

Nexperia USA Inc.

2453 1.08
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Tape & Reel (TR),Cut Tape (CT),Digi-Reel® - Active P-Channel MOSFET (Metal Oxide) 30 V 13.5A (Ta), 71.1A (Tc) 4.5V, 10V 6.1mOhm @ 13.4A, 10V 2V @ 250µA 116.7 nC @ 10 V ±25V 3800 pF @ 15 V - 1.8W (Ta), 50W (Tc) -55°C ~ 150°C (TJ) Surface Mount
PJD100P03_L2_00001 PJD100P03_L2_00001

PJD100P03_L2_00001

30V P-CHANNEL ENHANCEMENT MODE M

Panjit International Inc.

3026 1.10
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Tape & Reel (TR),Cut Tape (CT),Digi-Reel® - Active P-Channel MOSFET (Metal Oxide) 30 V 15.8A (Ta), 100A (Tc) 4.5V, 10V 4.5mOhm @ 20A, 10V 2.5V @ 250µA 107 nC @ 10 V ±20V 6067 pF @ 25 V - 2W (Ta), 104W (Tc) -55°C ~ 150°C (TJ) Surface Mount
PJD50P04-AU_L2_000A1 PJD50P04-AU_L2_000A1

PJD50P04-AU_L2_000A1

40V P-CHANNEL ENHANCEMENT MODE M

Panjit International Inc.

3772 1.10
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Tape & Reel (TR),Cut Tape (CT),Digi-Reel® - Active P-Channel MOSFET (Metal Oxide) 40 V 9A (Ta), 50A (Tc) 4.5V, 10V 12mOhm @ 10A, 10V 2.5V @ 250µA 23 nC @ 4.5 V ±20V 2767 pF @ 25 V - 2.4W (Ta), 75W (Tc) -55°C ~ 175°C (TJ) Surface Mount
PJD85N03-AU_L2_000A1 PJD85N03-AU_L2_000A1

PJD85N03-AU_L2_000A1

30V N-CHANNEL ENHANCEMENT MODE M

Panjit International Inc.

3781 1.10
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Tape & Reel (TR),Cut Tape (CT),Digi-Reel® - Active N-Channel MOSFET (Metal Oxide) 30 V 16A (Ta), 85A (Tc) 4.5V, 10V 3.8mOhm @ 20A, 10V 2.5V @ 250µA 23 nC @ 4.5 V ±20V 2436 pF @ 25 V - 2W (Ta), 58W (Tc) -55°C ~ 150°C (TJ) Surface Mount
SQJ416EP-T1_BE3

Таблицы данных

SQJ416EP-T1_BE3

SQJ416EP-T1_BE3

N-CHANNEL 100-V (D-S) 175C MOSFE

Vishay Siliconix

3591 1.03
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Tape & Reel (TR),Cut Tape (CT),Digi-Reel® - Active N-Channel MOSFET (Metal Oxide) 100 V 27A (Tc) 10V 30mOhm @ 10A, 10V 3.5V @ 250µA 20 nC @ 10 V ±20V 800 pF @ 25 V - 45W (Tc) -55°C ~ 175°C (TJ) Surface Mount
SQJ868EP-T1_BE3

Таблицы данных

SQJ868EP-T1_BE3

SQJ868EP-T1_BE3

N-CHANNEL 40-V (D-S) 175C MOSFET

Vishay Siliconix

2612 1.03
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Расследования

Tape & Reel (TR),Cut Tape (CT),Digi-Reel® Automotive, AEC-Q101, TrenchFET® Active N-Channel MOSFET (Metal Oxide) 40 V 58A (Tc) 10V 7.35mOhm @ 14A, 10V 3.5V @ 250µA 55 nC @ 10 V ±20V 2450 pF @ 20 V - 48W (Tc) -55°C ~ 175°C (TJ) Surface Mount
SQJ474EP-T1_BE3

Таблицы данных

SQJ474EP-T1_BE3

SQJ474EP-T1_BE3

N-CHANNEL 100-V (D-S) 175C MOSFE

Vishay Siliconix

2285 1.03
- +

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Расследования

Tape & Reel (TR),Cut Tape (CT),Digi-Reel® Automotive, AEC-Q101, TrenchFET® Active N-Channel MOSFET (Metal Oxide) 100 V 26A (Tc) 4.5V, 10V 30mOhm @ 10A, 10V 2.5V @ 250µA 30 nC @ 10 V ±20V 1100 pF @ 25 V - 45W (Tc) -55°C ~ 175°C (TJ) Surface Mount
SQJ457EP-T2_GE3

Таблицы данных

SQJ457EP-T2_GE3

SQJ457EP-T2_GE3

P-CHANNEL 60-V (D-S) 175C MOSFET

Vishay Siliconix

3589 1.03
- +

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Tape & Reel (TR),Cut Tape (CT),Digi-Reel® - Active P-Channel MOSFET (Metal Oxide) 60 V 36A (Tc) 4.5V, 10V 25mOhm @ 10A, 10V 2.5V @ 250µA 100 nC @ 10 V ±20V 3400 pF @ 25 V - 68W (Tc) -55°C ~ 175°C (TJ) Surface Mount
SQJ457EP-T1_BE3

Таблицы данных

SQJ457EP-T1_BE3

SQJ457EP-T1_BE3

P-CHANNEL 60-V (D-S) 175C MOSFET

Vishay Siliconix

3089 1.03
- +

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Расследования

Tape & Reel (TR),Cut Tape (CT),Digi-Reel® - Active P-Channel MOSFET (Metal Oxide) 60 V 36A (Tc) 4.5V, 10V 25mOhm @ 10A, 10V 2.5V @ 250µA 100 nC @ 10 V ±20V 3400 pF @ 25 V - 68W (Tc) -55°C ~ 175°C (TJ) Surface Mount
RM8N700IP RM8N700IP

RM8N700IP

MOSFET N-CHANNEL 700V 8A TO251

Rectron USA

2677 0.47
- +

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Расследования

Tube - Active N-Channel MOSFET (Metal Oxide) 700 V 8A (Tc) 10V 600mOhm @ 4A, 10V 4V @ 250µA - ±30V 590 pF @ 50 V - 69W (Tc) -55°C ~ 150°C (TJ) Through Hole
RM5N700IP RM5N700IP

RM5N700IP

MOSFET N-CHANNEL 700V 5A TO251

Rectron USA

2121 0.47
- +

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Расследования

Tube - Active N-Channel MOSFET (Metal Oxide) 700 V 5A (Tc) 10V 950mOhm @ 2.5A, 10V 3.5V @ 250µA - ±30V 460 pF @ 50 V - 49W (Tc) -55°C ~ 150°C (TJ) Through Hole
RM8N700LD RM8N700LD

RM8N700LD

MOSFET N-CHANNEL 700V 8A TO252-2

Rectron USA

2575 0.47
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Расследования

Tube - Active N-Channel MOSFET (Metal Oxide) 700 V 8A (Tc) 10V 600mOhm @ 4A, 10V 4V @ 250µA - ±30V 590 pF @ 50 V - 69W (Tc) -55°C ~ 150°C (TJ) Surface Mount
RM5N700LD RM5N700LD

RM5N700LD

MOSFET N-CHANNEL 700V 5A TO252-2

Rectron USA

2511 0.47
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Tape & Reel (TR) - Active N-Channel MOSFET (Metal Oxide) 700 V 5A (Tc) 10V 950mOhm @ 2.5A, 10V 3.5V @ 250µA - ±30V 460 pF @ 50 V - 49W (Tc) -55°C ~ 150°C (TJ) Surface Mount
RM35P100T2 RM35P100T2

RM35P100T2

MOSFET P-CH 100V 35A TO220-3

Rectron USA

2829 0.47
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Tube - Active P-Channel MOSFET (Metal Oxide) 100 V 35A (Tc) 4.5V, 10V 50mOhm @ 10A, 10V 2.5V @ 250µA - ±20V 6516 pF @ 25 V - 104W (Tc) -55°C ~ 150°C (TJ) Through Hole
NTMFS4C028NT1G

Таблицы данных

NTMFS4C028NT1G

NTMFS4C028NT1G

MOSFET N-CH 30V 16.4A/52A 5DFN

onsemi

2611 1.04
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Tape & Reel (TR),Cut Tape (CT),Digi-Reel® - Active N-Channel MOSFET (Metal Oxide) 30 V 16.4A (Ta), 52A (Tc) 4.5V, 10V 4.73mOhm @ 30A, 10V 2.1V @ 250µA 22.2 nC @ 10 V ±20V 1252 pF @ 15 V - 2.51W (Ta), 25.5W (Tc) -55°C ~ 150°C (TJ) Surface Mount
NTTFS6H860NLTAG

Таблицы данных

NTTFS6H860NLTAG

NTTFS6H860NLTAG

MOSFET N-CH 80V 8.1A/30A 8WDFN

onsemi

2569 0.68
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Расследования

Tape & Reel (TR),Cut Tape (CT),Digi-Reel® - Active N-Channel MOSFET (Metal Oxide) 80 V 8.1A (Ta), 30A (Tc) 4.5V, 10V 20mOhm @ 5A, 10V 2V @ 30µA 12 nC @ 10 V ±20V 610 pF @ 40 V - 3.1W (Ta), 42W (Tc) -55°C ~ 175°C (TJ) Surface Mount
PJQ5426_R2_00001 PJQ5426_R2_00001

PJQ5426_R2_00001

30V N-CHANNEL ENHANCEMENT MODE M

Panjit International Inc.

3014 1.12
- +

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Расследования

Tape & Reel (TR),Cut Tape (CT),Digi-Reel® - Active N-Channel MOSFET (Metal Oxide) 30 V 20A (Ta), 115A (Tc) 4.5V, 10V 2.4mOhm @ 20A, 10V 2.5V @ 250µA 35 nC @ 4.5 V ±20V 4305 pF @ 25 V - 2W (Ta), 136W (Tc) -55°C ~ 150°C (TJ) Surface Mount
SQJ481EP-T1_BE3

Таблицы данных

SQJ481EP-T1_BE3

SQJ481EP-T1_BE3

P-CHANNEL 80-V (D-S) 175C MOSFET

Vishay Siliconix

3362 1.05
- +

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Расследования

Tape & Reel (TR),Cut Tape (CT),Digi-Reel® Automotive, AEC-Q101, TrenchFET® Active P-Channel MOSFET (Metal Oxide) 80 V 16A (Tc) 4.5V, 10V 80mOhm @ 10A, 10V 2.5V @ 250µA 50 nC @ 10 V ±20V 2000 pF @ 25 V - 45W (Tc) -55°C ~ 175°C (TJ) Surface Mount
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