Таблицы данных Фотографии Производитель. Часть # Акции Цены А Packaging Series ProductStatus FETType Technology DraintoSourceVoltage(Vdss) Current-ContinuousDrain(Id)@25°C DriveVoltage(MaxRdsOnMinRdsOn) RdsOn(Max)@IdVgs Vgs(th)(Max)@Id GateCharge(Qg)(Max)@Vgs Vgs(Max) InputCapacitance(Ciss)(Max)@Vds FETFeature PowerDissipation(Max) OperatingTemperature MountingType
RM8N650T2 RM8N650T2

RM8N650T2

MOSFET N-CHANNEL 650V 8A TO220-3

Rectron USA

2740 0.52
- +

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Расследования

Tube - Active N-Channel MOSFET (Metal Oxide) 650 V 8A (Tc) 10V 450mOhm @ 4A, 10V 3.5V @ 250µA - ±30V 680 pF @ 50 V - 80W (Tc) -55°C ~ 150°C (TJ) Through Hole
RM8N650LD RM8N650LD

RM8N650LD

MOSFET N-CHANNEL 650V 8A TO252-2

Rectron USA

3007 0.52
- +

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Расследования

Tape & Reel (TR) - Active N-Channel MOSFET (Metal Oxide) 650 V 8A (Tc) 10V 540mOhm @ 4A, 10V 3.5V @ 250µA - ±30V 680 pF @ 50 V - 80W (Tc) -55°C ~ 150°C (TJ) Surface Mount
RM8N650TI RM8N650TI

RM8N650TI

MOSFET N-CHANNEL 650V 8A TO220F

Rectron USA

2815 0.52
- +

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Tube - Active N-Channel MOSFET (Metal Oxide) 650 V 8A (Tj) 10V 450mOhm @ 4A, 10V 3.5V @ 250µA - ±30V 680 pF @ 50 V - 31.7W (Tc) -55°C ~ 150°C (TJ) Through Hole
RM8N650IP RM8N650IP

RM8N650IP

MOSFET N-CHANNEL 650V 8A TO251

Rectron USA

3056 0.52
- +

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Расследования

Tube - Active N-Channel MOSFET (Metal Oxide) 650 V 8A (Tc) 10V 540mOhm @ 4A, 10V 3.5V @ 250µA - ±30V 680 pF @ 50 V - 80W (Tc) -55°C ~ 150°C (TJ) Through Hole
RM80N80T2 RM80N80T2

RM80N80T2

MOSFET N-CHANNEL 80V 80A TO220-3

Rectron USA

2833 0.52
- +

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Tube - Active N-Channel MOSFET (Metal Oxide) 80 V 80A (Ta) 10V 8.5mOhm @ 40A, 10V 4V @ 250µA - ±20V 4100 pF @ 25 V - 170W (Ta) -55°C ~ 175°C (TJ) Through Hole
RM8N650HD RM8N650HD

RM8N650HD

MOSFET N-CHANNEL 650V 8A TO263-2

Rectron USA

2998 0.52
- +

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Расследования

Tape & Reel (TR) - Active N-Channel MOSFET (Metal Oxide) 650 V 8A (Tc) 10V 450mOhm @ 4A, 10V 3.5V @ 250µA - ±30V 680 pF @ 50 V - 80W (Tc) -55°C ~ 150°C (TJ) Surface Mount
RM80N80HD RM80N80HD

RM80N80HD

MOSFET N-CHANNEL 80V 80A TO263-2

Rectron USA

2491 0.52
- +

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Tape & Reel (TR) - Active N-Channel MOSFET (Metal Oxide) 80 V 80A (Ta) 10V 8.5mOhm @ 40A, 10V 4V @ 250µA - ±20V 4400 pF @ 25 V - 170W (Ta) -55°C ~ 175°C (TJ) Surface Mount
ISC0703NLSATMA1

Таблицы данных

ISC0703NLSATMA1

ISC0703NLSATMA1

MOSFET N-CH 60V 13A/57A TDSON-8

Infineon Technologies

3460 1.18
- +

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Tape & Reel (TR),Cut Tape (CT),Digi-Reel® OptiMOS™ 5 Active N-Channel MOSFET (Metal Oxide) 60 V 13A (Ta), 57A (Tc) 4.5V, 10V 6.9mOhm @ 32A, 10V 2.3V @ 15µA 23 nC @ 10 V ±20V 1400 pF @ 30 V - 3W (Ta), 44W (Tc) -55°C ~ 175°C (TJ) Surface Mount
IRFR3411PBF

Таблицы данных

IRFR3411PBF

IRFR3411PBF

MOSFET N-CH 100V 32A DPAK

International Rectifier

3826 0.32
- +

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Tube HEXFET® Obsolete N-Channel MOSFET (Metal Oxide) 100 V 32A (Tc) - 44mOhm @ 16A, 10V 4V @ 250µA 71 nC @ 10 V ±20V 1960 pF @ 25 V - 130W (Tc) -55°C ~ 175°C (TJ) Surface Mount
BUZ73ALIN

Таблицы данных

BUZ73ALIN

BUZ73ALIN

N-CHANNEL POWER MOSFET

Infineon Technologies

2751 0.00
- +

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Bulk * Active - - - - - - - - - - - - - -
IPB230N06L3G

Таблицы данных

IPB230N06L3G

IPB230N06L3G

N-CHANNEL POWER MOSFET

Infineon Technologies

2279 0.00
- +

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Расследования

Bulk * Active - - - - - - - - - - - - - -
IRLR8259PBF

Таблицы данных

IRLR8259PBF

IRLR8259PBF

HEXFET POWER MOSFET

International Rectifier

3141 0.00
- +

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Расследования

Bulk HEXFET® Active N-Channel MOSFET (Metal Oxide) 25 V 57A (Tc) 4.5V, 10V 8.7mOhm @ 21A, 10V 2.35V @ 25µA 10 nC @ 4.5 V ±20V 900 pF @ 13 V - 48W (Tc) -55°C ~ 175°C (TJ) Surface Mount
SQJ443EP-T2_GE3

Таблицы данных

SQJ443EP-T2_GE3

SQJ443EP-T2_GE3

P-CHANNEL 40-V (D-S) 175C MOSFET

Vishay Siliconix

2869 1.16
- +

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Расследования

Tape & Reel (TR),Cut Tape (CT),Digi-Reel® Automotive, AEC-Q101, TrenchFET® Active P-Channel MOSFET (Metal Oxide) 40 V 40A (Tc) 4.5V, 10V 29mOhm @ 18A, 10V 2.5V @ 250µA 57 nC @ 10 V ±20V 2030 pF @ 20 V - 83W (Tc) -55°C ~ 175°C (TJ) Surface Mount
RM120N85T2 RM120N85T2

RM120N85T2

MOSFET N-CH 85V 120A TO220-3

Rectron USA

2919 0.53
- +

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Tube - Active N-Channel MOSFET (Metal Oxide) 85 V 120A (Tc) 10V 5.3mOhm @ 60A, 10V 4.5V @ 250µA - ±20V 5500 pF @ 40 V - 160W (Tc) -55°C ~ 175°C (TJ) Through Hole
IPD30N03S2L20ATMA1

Таблицы данных

IPD30N03S2L20ATMA1

IPD30N03S2L20ATMA1

MOSFET N-CH 30V 30A TO252-31

Infineon Technologies

3990 1.00
- +

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Расследования

Tape & Reel (TR),Cut Tape (CT),Digi-Reel®,Bulk OptiMOS™ Active N-Channel MOSFET (Metal Oxide) 30 V 30A (Tc) 4.5V, 10V 20mOhm @ 18A, 10V 2V @ 23µA 19 nC @ 10 V ±20V 530 pF @ 25 V - 60W (Tc) -55°C ~ 175°C (TJ) Surface Mount
PJD50P04_L2_00001 PJD50P04_L2_00001

PJD50P04_L2_00001

40V P-CHANNEL ENHANCEMENT MODE M

Panjit International Inc.

3192 0.84
- +

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Расследования

Tape & Reel (TR),Cut Tape (CT),Digi-Reel® - Active P-Channel MOSFET (Metal Oxide) 40 V 9A (Ta), 50A (Tc) 4.5V, 10V 12mOhm @ 10A, 10V 2.5V @ 250µA 23 nC @ 4.5 V ±20V 2767 pF @ 25 V - 2W (Ta), 63W (Tc) -55°C ~ 150°C (TJ) Surface Mount
SQJ423EP-T1_BE3

Таблицы данных

SQJ423EP-T1_BE3

SQJ423EP-T1_BE3

P-CHANNEL 40-V (D-S) 175C MOSFET

Vishay Siliconix

3990 1.17
- +

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Расследования

Tape & Reel (TR),Cut Tape (CT),Digi-Reel® - Active P-Channel MOSFET (Metal Oxide) 40 V 55A (Tc) 4.5V, 10V 14mOhm @ 10A, 10V 2.5V @ 250µA 130 nC @ 10 V ±20V 4500 pF @ 25 V - 68W (Tc) -55°C ~ 175°C (TJ) Surface Mount
SI7625DN-T1-GE3

Таблицы данных

SI7625DN-T1-GE3

SI7625DN-T1-GE3

MOSFET P-CH 30V 35A PPAK1212-8

Vishay Siliconix

2374 1.18
- +

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Расследования

Tape & Reel (TR),Cut Tape (CT),Digi-Reel® TrenchFET® Active P-Channel MOSFET (Metal Oxide) 30 V 35A (Tc) 4.5V, 10V 7mOhm @ 15A, 10V 2.5V @ 250µA 126 nC @ 10 V ±20V 4427 pF @ 15 V - 3.7W (Ta), 52W (Tc) -55°C ~ 150°C (TJ) Surface Mount
BSP135IXTSA1

Таблицы данных

BSP135IXTSA1

BSP135IXTSA1

SMALL SIGNAL MOSFETS PG-SOT223-4

Infineon Technologies

3901 1.18
- +

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Расследования

Tape & Reel (TR),Cut Tape (CT),Digi-Reel® - Active N-Channel MOSFET (Metal Oxide) 600 V 120mA (Ta) 0V, 10V 45Ohm @ 120mA, 10V 1V @ 94µA 3.7 nC @ 5 V ±20V 98 pF @ 25 V - 1.8W (Ta) -55°C ~ 150°C (TJ) Surface Mount
DMTH43M8LFGQ-13

Таблицы данных

DMTH43M8LFGQ-13

DMTH43M8LFGQ-13

MOSFET N-CH 40V PWRDI3333

Diodes Incorporated

2382 1.26
- +

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Расследования

Tape & Reel (TR),Cut Tape (CT),Digi-Reel® Automotive, AEC-Q101 Active N-Channel MOSFET (Metal Oxide) 40 V 24A (Ta), 100A (Tc) 5V, 10V 3mOhm @ 20A, 10V 2.5V @ 250µA 40.1 nC @ 10 V ±20V 2798 pF @ 20 V - 2.62W (Ta), 65.2W (Tc) -55°C ~ 175°C (TJ) Surface Mount
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