Грузовой вагон ( )| Таблицы данных | Фотографии | Производитель. Часть # | Акции | Цены | А | Packaging | Series | ProductStatus | FETType | Technology | DraintoSourceVoltage(Vdss) | Current-ContinuousDrain(Id)@25°C | DriveVoltage(MaxRdsOnMinRdsOn) | RdsOn(Max)@IdVgs | Vgs(th)(Max)@Id | GateCharge(Qg)(Max)@Vgs | Vgs(Max) | InputCapacitance(Ciss)(Max)@Vds | FETFeature | PowerDissipation(Max) | OperatingTemperature | MountingType |
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CPH3413-TL-EN-CHANNEL SILICON MOSFET |
2871 | 0.24 |
ДобавитьРасследования |
Bulk | * | Active | - | - | - | - | - | - | - | - | - | - | - | - | - | - |
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Таблицы данных |
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SI3454DVSMALL SIGNAL N-CHANNEL MOSFET |
3601 | 0.00 |
ДобавитьРасследования |
Bulk | PowerTrench® | Active | N-Channel | MOSFET (Metal Oxide) | 30 V | 4.2A (Ta) | 4.5V, 10V | 65mOhm @ 4.2A, 10V | 2V @ 250µA | 15 nC @ 10 V | ±20V | 460 pF @ 15 V | - | 800mW (Ta) | -55°C ~ 150°C (TJ) | Surface Mount |
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Таблицы данных |
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IPI22N03S4L-15N-CHANNEL POWER MOSFET |
3393 | 0.00 |
ДобавитьРасследования |
Bulk | * | Active | N-Channel | MOSFET (Metal Oxide) | 30 V | 22A (Tc) | 4.5V, 10V | 14.9mOhm @ 22A, 10V | 2.2V @ 10µA | 14 nC @ 10 V | ±16V | 980 pF @ 25 V | - | 31W (Tc) | -55°C ~ 175°C (TJ) | Through Hole |
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Таблицы данных |
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IRFR4105ZPBFMOSFET N-CH 55V 30A DPAK |
2162 | 0.00 |
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Bulk | HEXFET® | Active | N-Channel | MOSFET (Metal Oxide) | 55 V | 30A (Tc) | - | 24.5mOhm @ 18A, 10V | 4V @ 250µA | 27 nC @ 10 V | ±20V | 740 pF @ 25 V | - | 48W (Tc) | -55°C ~ 175°C (TJ) | Surface Mount |
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Таблицы данных |
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IRF7401PBFHEXFET POWER MOSFET |
2630 | 0.00 |
ДобавитьРасследования |
Bulk | HEXFET® | Active | N-Channel | MOSFET (Metal Oxide) | 20 V | 8.7A (Ta) | 2.7V, 4.5V | 22mOhm @ 4.1A, 4.5V | 700mV @ 250µA (Min) | 48 nC @ 4.5 V | ±12V | 1600 pF @ 15 V | - | 2.5W (Ta) | -55°C ~ 150°C (TJ) | Surface Mount |
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Таблицы данных |
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IRLL024NPBF-INFHEXFET POWER MOSFET |
2664 | 0.00 |
ДобавитьРасследования |
Bulk | HEXFET® | Active | N-Channel | MOSFET (Metal Oxide) | 55 V | 3.1A (Ta) | - | 65mOhm @ 3.1A, 10V | 2V @ 250µA | 15.6 nC @ 5 V | ±16V | 510 pF @ 25 V | - | 1W (Ta) | -55°C ~ 150°C (TJ) | Surface Mount |
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Таблицы данных |
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SIHL620S-GE3LOGIC MOSFET N-CHANNEL 200V |
3431 | 0.94 |
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Tape & Reel (TR),Cut Tape (CT),Digi-Reel® | - | Active | N-Channel | MOSFET (Metal Oxide) | 200 V | 5.2A (Tc) | 4V, 10V | 800mOhm @ 3.1A, 10V | 2V @ 250µA | 16 nC @ 5 V | ±10V | 360 pF @ 25 V | - | 3.1W (Ta), 50W (Tc) | -55°C ~ 150°C (TJ) | Surface Mount |
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Таблицы данных |
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FDMA410NZMOSFET N-CH 20V 9.5A 6MICROFET |
3164 | 1.01 |
ДобавитьРасследования |
Tape & Reel (TR),Cut Tape (CT),Digi-Reel® | PowerTrench® | Active | N-Channel | MOSFET (Metal Oxide) | 20 V | 9.5A (Ta) | 1.5V, 4.5V | 23mOhm @ 9.5A, 4.5V | 1V @ 250µA | 14 nC @ 4.5 V | ±8V | 1080 pF @ 10 V | - | 2.4W (Ta) | -55°C ~ 150°C (TJ) | Surface Mount |
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Таблицы данных |
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SQS164ELNW-T1_GE3AUTOMOTIVE N-CHANNEL 60 V (D-S) |
3524 | 0.95 |
ДобавитьРасследования |
Tape & Reel (TR),Cut Tape (CT),Digi-Reel® | Automotive, AEC-Q101, TrenchFET® Gen IV | Active | N-Channel | MOSFET (Metal Oxide) | 60 V | 82A (Tc) | 4.5V, 10V | 7.4mOhm @ 10A, 10V | 2.5V @ 250µA | 41 nC @ 10 V | ±20V | 2159 pF @ 25 V | - | 104W (Tc) | -55°C ~ 175°C (TJ) | Surface Mount, Wettable Flank |
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Таблицы данных |
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SQS482EN-T1_BE3N-CHANNEL 30-V (D-S) 175C MOSFET |
2129 | 0.96 |
ДобавитьРасследования |
Tape & Reel (TR),Cut Tape (CT),Digi-Reel® | - | Active | N-Channel | MOSFET (Metal Oxide) | 30 V | 16A (Tc) | 4.5V, 10V | 8.5mOhm @ 16.4A, 10V | 2.5V @ 250µA | 39 nC @ 10 V | ±20V | 1865 pF @ 25 V | - | 62W (Tc) | -55°C ~ 175°C (TJ) | Surface Mount |
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Таблицы данных |
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SIA413ADJ-T1-GE3MOSFET P-CH 12V 12A PPAK SC70-6 |
2074 | 0.97 |
ДобавитьРасследования |
Tape & Reel (TR),Cut Tape (CT),Digi-Reel® | TrenchFET® | Active | P-Channel | MOSFET (Metal Oxide) | 12 V | 12A (Tc) | 1.5V, 4.5V | 29mOhm @ 6.7A, 4.5V | 1V @ 250µA | 57 nC @ 8 V | ±8V | 1800 pF @ 10 V | - | 19W (Tc) | -55°C ~ 150°C (TJ) | Surface Mount |
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Таблицы данных |
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FQD24N08TFMOSFET N-CH 80V 19.6A DPAK |
3981 | 0.00 |
ДобавитьРасследования |
Bulk | QFET® | Obsolete | N-Channel | MOSFET (Metal Oxide) | 80 V | 19.6A (Tc) | 10V | 60mOhm @ 9.8A, 10V | 4V @ 250µA | 25 nC @ 10 V | ±25V | 750 pF @ 25 V | - | 2.5W (Ta), 50W (Tc) | -55°C ~ 150°C (TJ) | Surface Mount |
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RM78N100LDMOSFET N-CH 100V 78A TO252-2 |
3684 | 0.44 |
ДобавитьРасследования |
Tape & Reel (TR) | - | Active | N-Channel | MOSFET (Metal Oxide) | 100 V | 78A (Tc) | 4.5V, 10V | 8.5mOhm @ 39A, 10V | 2.2V @ 250µA | - | ±20V | 5480 pF @ 50 V | - | 125W (Tc) | -55°C ~ 175°C (TJ) | Surface Mount |
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RM110N82T2MOSFET N-CH 82V 110A TO220-3 |
2477 | 0.44 |
ДобавитьРасследования |
Tube | - | Active | N-Channel | MOSFET (Metal Oxide) | 82 V | 110A (Tc) | 10V | 7mOhm @ 20A, 10V | 4V @ 250µA | - | ±20V | 6400 pF @ 40 V | - | 200W (Tc) | -55°C ~ 175°C (TJ) | Through Hole |
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RM24N200TIMOSFET N-CHANNEL 220V 24A TO220F |
3334 | 0.44 |
ДобавитьРасследования |
Tube | - | Active | N-Channel | MOSFET (Metal Oxide) | 220 V | 24A (Ta) | 10V | 80mOhm @ 15A, 10V | 2.5V @ 250µA | - | ±20V | 4200 pF @ 25 V | - | 45W (Ta) | -55°C ~ 175°C (TJ) | Through Hole |
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Таблицы данных |
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HUF76129S3STN-CHANNEL POWER MOSFET |
3239 | 0.00 |
ДобавитьРасследования |
Bulk | UltraFET® | Active | N-Channel | MOSFET (Metal Oxide) | 30 V | 56A (Tc) | 4.5V, 10V | 16Ohm @ 56A, 10V | 3V @ 250µA | 45 nC @ 10 V | ±20V | 1350 pF @ 25 V | - | 105W (Tc) | -40°C ~ 150°C (TJ) | Surface Mount |
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Таблицы данных |
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X97813760SMALL SIGNAL MOSFET |
2192 | 0.00 |
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Bulk | * | Active | - | - | - | - | - | - | - | - | - | - | - | - | - | - |
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PJD60N04_L2_0000140V N-CHANNEL ENHANCEMENT MODE M |
3244 | 1.04 |
ДобавитьРасследования |
Tape & Reel (TR),Cut Tape (CT),Digi-Reel® | - | Active | N-Channel | MOSFET (Metal Oxide) | 40 V | 12.7A (Ta), 60A (Tc) | 4.5V, 10V | 6.5mOhm @ 20A, 10V | 2.5V @ 250µA | 17 nC @ 4.5 V | ±20V | 1759 pF @ 25 V | - | 2W (Ta), 62W (Tc) | -55°C ~ 150°C (TJ) | Surface Mount |
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Таблицы данных |
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BUK6217-55CPFET, 44A I(D), 55V, 0.0285OHM |
3644 | 0.00 |
ДобавитьРасследования |
Bulk | * | Active | - | - | - | - | - | - | - | - | - | - | - | - | - | |
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Таблицы данных |
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SIS4604LDN-T1-GE3N-CHANNEL 60 V (D-S) MOSFET POWE |
2489 | 0.97 |
ДобавитьРасследования |
Tape & Reel (TR),Cut Tape (CT),Digi-Reel® | TrenchFET® Gen IV | Active | N-Channel | MOSFET (Metal Oxide) | 60 V | 15.1A (Ta), 45.9A (Tc) | 4.5V, 10V | 8.9mOhm @ 10A, 10V | 3V @ 250µA | 28 nC @ 10 V | ±20V | 1180 pF @ 30 V | - | 3.6W (Ta), 33.7W (Tc) | -55°C ~ 150°C (TJ) | Surface Mount |
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