Грузовой вагон ( )| Таблицы данных | Фотографии | Производитель. Часть # | Акции | Цены | А | Packaging | Series | ProductStatus | FETType | Technology | DraintoSourceVoltage(Vdss) | Current-ContinuousDrain(Id)@25°C | DriveVoltage(MaxRdsOnMinRdsOn) | RdsOn(Max)@IdVgs | Vgs(th)(Max)@Id | GateCharge(Qg)(Max)@Vgs | Vgs(Max) | InputCapacitance(Ciss)(Max)@Vds | FETFeature | PowerDissipation(Max) | OperatingTemperature | MountingType |
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PJL9424_R2_0000140V N-CHANNEL ENHANCEMENT MODE M |
3203 | 0.75 |
ДобавитьРасследования |
Tape & Reel (TR),Cut Tape (CT),Digi-Reel® | - | Active | N-Channel | MOSFET (Metal Oxide) | 40 V | 11A (Ta) | 4.5V, 10V | 9.5mOhm @ 8A, 10V | 2.5V @ 250µA | 22 nC @ 10 V | ±20V | 1258 pF @ 25 V | - | 2.1W (Ta) | -55°C ~ 150°C (TJ) | Surface Mount |
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Таблицы данных |
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DMP3021SFVWQ-7MOSFET P-CH 30V 9.8A PWRDI3333-8 |
2620 | 0.29 |
ДобавитьРасследования |
Tape & Reel (TR) | - | Active | P-Channel | MOSFET (Metal Oxide) | 30 V | 11A (Ta), 42A (Tc) | 5V, 10V | 15mOhm @ 8A, 10V | 2.5V @ 250µA | 34 nC @ 10 V | ±25V | 1799 pF @ 15 V | - | 1W (Ta) | -55°C ~ 150°C (TJ) | Surface Mount |
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Таблицы данных |
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DMP3021SFVWQ-13MOSFET P-CH 30V 9.8A PWRDI3333-8 |
3490 | 0.75 |
ДобавитьРасследования |
Tape & Reel (TR),Cut Tape (CT),Digi-Reel® | - | Active | P-Channel | MOSFET (Metal Oxide) | 30 V | 11A (Ta), 42A (Tc) | 5V, 10V | 15mOhm @ 8A, 10V | 2.5V @ 250µA | 34 nC @ 10 V | ±25V | 1799 pF @ 15 V | - | 1W (Ta) | -55°C ~ 150°C (TJ) | Surface Mount, Wettable Flank |
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Таблицы данных |
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SISA18BDN-T1-GE3N-CHANNEL 30 V (D-S) MOSFET POWE |
3592 | 0.73 |
ДобавитьРасследования |
Tape & Reel (TR),Cut Tape (CT),Digi-Reel® | TrenchFET® Gen IV | Active | N-Channel | MOSFET (Metal Oxide) | 30 V | 18A (Ta), 60A (Tc) | 4.5V, 10V | 6.83mOhm @ 10A, 10V | 2.4V @ 250µA | 19 nC @ 10 V | +20V, -16V | 680 pF @ 15 V | - | 3.2W (Ta), 36.8W (Tc) | -55°C ~ 150°C (TJ) | Surface Mount |
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Таблицы данных |
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SQ3419AEEV-T1_BE3P-CHANNEL 40-V (D-S) 175C MOSFET |
3488 | 0.74 |
ДобавитьРасследования |
Tape & Reel (TR),Cut Tape (CT),Digi-Reel® | Automotive, AEC-Q101, TrenchFET® | Active | P-Channel | MOSFET (Metal Oxide) | 40 V | 6.9A (Tc) | 4.5V, 10V | 61mOhm @ 2.5A, 10V | 2.5V @ 250µA | 12.5 nC @ 4.5 V | ±12V | 975 pF @ 20 V | - | 5W (Tc) | -55°C ~ 175°C (TJ) | Surface Mount |
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PJQ5423_R2_0000130V P-CHANNEL ENHANCEMENT MODE M |
2665 | 0.76 |
ДобавитьРасследования |
Tape & Reel (TR),Cut Tape (CT),Digi-Reel® | - | Active | P-Channel | MOSFET (Metal Oxide) | 30 V | 11A (Ta), 60A (Tc) | 4.5V, 10V | 8.5mOhm @ 10A, 10V | 2.5V @ 250µA | 27 nC @ 4.5 V | ±20V | 3228 pF @ 15 V | - | 2W (Ta), 63W (Tc) | -55°C ~ 150°C (TJ) | Surface Mount |
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Таблицы данных |
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SI2319DS-T1-BE3P-CHANNEL 40-V (D-S) MOSFET |
2890 | 0.74 |
ДобавитьРасследования |
Tape & Reel (TR),Cut Tape (CT),Digi-Reel® | - | Active | P-Channel | MOSFET (Metal Oxide) | 40 V | 2.3A (Ta) | 4.5V, 10V | 82mOhm @ 3A, 10V | 3V @ 250µA | 17 nC @ 10 V | ±20V | 470 pF @ 20 V | - | 750mW (Ta) | -55°C ~ 150°C (TJ) | Surface Mount |
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Таблицы данных |
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SI3473CDV-T1-BE3P-CHANNEL 12-V (D-S) MOSFET |
2862 | 0.74 |
ДобавитьРасследования |
Tape & Reel (TR),Cut Tape (CT),Digi-Reel® | - | Active | P-Channel | MOSFET (Metal Oxide) | 12 V | 8A (Ta), 8A (Tc) | 1.8V, 4.5V | 22mOhm @ 8.1A, 4.5V | 1V @ 250µA | 65 nC @ 8 V | ±8V | 2010 pF @ 6 V | - | 2W (Ta), 4.2W (Tc) | -55°C ~ 150°C (TJ) | Surface Mount |
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Таблицы данных |
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DMPH4029LFGQ-7MOSFET P-CH 40V 8A/22A PWRDI3333 |
2315 | 0.77 |
ДобавитьРасследования |
Tape & Reel (TR),Cut Tape (CT),Digi-Reel® | Automotive, AEC-Q101 | Active | P-Channel | MOSFET (Metal Oxide) | 40 V | 8A (Ta), 22A (Tc) | 4.5V, 10V | 29mOhm @ 3A, 10V | 3V @ 250µA | 34 nC @ 10 V | ±20V | 1626 pF @ 20 V | - | 1.2W (Ta) | -55°C ~ 175°C (TJ) | Surface Mount |
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RM48N100D3MOSFET N-CHANNEL 100V 48A 8DFN |
2988 | 0.30 |
ДобавитьРасследования |
Tape & Reel (TR) | - | Active | N-Channel | MOSFET (Metal Oxide) | 100 V | 48A (Tc) | 4.5V, 10V | 13.6mOhm @ 20A, 10V | 2.5V @ 250µA | - | +20V, -12V | 3280 pF @ 50 V | - | 61W (Tc) | -50°C ~ 150°C (TJ) | Surface Mount |
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SI4153DY-T1-GE3P-CHANNEL 30-V (D-S) MOSFET SO-8 |
3993 | 0.75 |
ДобавитьРасследования |
Tape & Reel (TR),Cut Tape (CT),Digi-Reel® | TrenchFET® Gen III | Active | P-Channel | MOSFET (Metal Oxide) | 30 V | 14.3A (Ta), 19.3A (Tc) | 4.5V, 10V | 9.5mOhm @ 10A, 10V | 2.5V @ 250µA | 93 nC @ 10 V | ±25V | 3600 pF @ 15 V | - | 3.1W (Ta), 5.6W (Tc) | -55°C ~ 150°C (TJ) | Surface Mount |
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Таблицы данных |
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PMN50UPE,115MOSFET P-CH 20V 3.6A 6TSOP |
3004 | 0.00 |
ДобавитьРасследования |
Bulk | - | Obsolete | P-Channel | MOSFET (Metal Oxide) | 20 V | 3.6A (Ta) | 1.8V, 4.5V | 66mOhm @ 3.6A, 4.5V | 900mV @ 250µA | 15.7 nC @ 10 V | ±8V | 24 pF @ 10 V | - | 510mW (Ta) | -55°C ~ 150°C (TJ) | Surface Mount |
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Таблицы данных |
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FQI4N25TUMOSFET N-CH 250V 3.6A I2PAK |
3041 | 0.00 |
ДобавитьРасследования |
Tube | QFET® | Obsolete | N-Channel | MOSFET (Metal Oxide) | 250 V | 3.6A (Tc) | 10V | 1.75Ohm @ 1.8A, 10V | 5V @ 250µA | 5.6 nC @ 10 V | ±30V | 200 pF @ 25 V | - | 3.13W (Ta), 52W (Tc) | -55°C ~ 150°C (TJ) | Through Hole |
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Таблицы данных |
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FQNL1N50BTAMOSFET N-CH 500V 270MA TO92-3 |
2193 | 0.00 |
ДобавитьРасследования |
Bulk | QFET® | Obsolete | N-Channel | MOSFET (Metal Oxide) | 500 V | 270mA (Tc) | 10V | 9Ohm @ 135mA, 10V | 3.7V @ 250µA | 5.5 nC @ 10 V | ±30V | 150 pF @ 25 V | - | 1.5W (Tc) | -55°C ~ 150°C (TJ) | Through Hole |
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Таблицы данных |
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IRF610AN-CHANNEL POWER MOSFET |
3841 | 0.00 |
ДобавитьРасследования |
Bulk | - | Active | N-Channel | MOSFET (Metal Oxide) | 200 V | 3.3A (Tc) | 10V | 1.5Ohm @ 1.65A, 10V | 4V @ 250µA | 10 nC @ 10 V | ±30V | 210 pF @ 25 V | - | 38W (Tc) | -55°C ~ 150°C (TJ) | Through Hole |
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Таблицы данных |
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FQI4N20N-CHANNEL POWER MOSFET |
2626 | 0.00 |
ДобавитьРасследования |
Bulk | QFET™ | Active | N-Channel | MOSFET (Metal Oxide) | 200 V | 3.6A (Tc) | 10V | 1.4Ohm @ 1.8A, 10V | 5V @ 250µA | 6.5 nC @ 10 V | ±30V | 220 pF @ 25 V | - | 3.13W (Ta), 45W (Tc) | -55°C ~ 150°C (TJ) | Through Hole |
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Таблицы данных |
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BSP88L6327N-CHANNEL POWER MOSFET |
3608 | 0.00 |
ДобавитьРасследования |
Bulk | * | Active | - | - | - | - | - | - | - | - | - | - | - | - | - | - |
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Таблицы данных |
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IRFHM8334TRPBF-INFMOSFET N-CH 30V 13A/43A 8PQFN DL |
2162 | 0.00 |
ДобавитьРасследования |
Bulk | HEXFET® | Active | N-Channel | MOSFET (Metal Oxide) | 30 V | 13A (Ta), 43A (Tc) | - | 9mOhm @ 20A, 10V | 2.35V @ 25µA | 15 nC @ 10 V | ±20V | 1180 pF @ 10 V | - | 2.7W (Ta), 28W (Tc) | -55°C ~ 150°C (TJ) | Surface Mount |
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RM2N650LDMOSFET N-CHANNEL 650V 2A TO252-2 |
3986 | 0.30 |
ДобавитьРасследования |
Tape & Reel (TR) | - | Active | N-Channel | MOSFET (Metal Oxide) | 650 V | 2A (Tc) | 10V | 2.5Ohm @ 1A, 10V | 3.5V @ 250µA | - | ±30V | 190 pF @ 50 V | - | 23W (Tc) | -55°C ~ 150°C (TJ) | Surface Mount |
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RM2N650IPMOSFET N-CHANNEL 650V 2A TO251 |
3444 | 0.30 |
ДобавитьРасследования |
Tube | - | Active | N-Channel | MOSFET (Metal Oxide) | 650 V | 2A (Tc) | 10V | 2.5Ohm @ 1A, 10V | 3.5V @ 250µA | - | ±30V | 190 pF @ 50 V | - | 23W (Tc) | -55°C ~ 150°C (TJ) | Through Hole |
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