Таблицы данных Фотографии Производитель. Часть # Акции Цены А Packaging Series ProductStatus FETType Technology DraintoSourceVoltage(Vdss) Current-ContinuousDrain(Id)@25°C DriveVoltage(MaxRdsOnMinRdsOn) RdsOn(Max)@IdVgs Vgs(th)(Max)@Id GateCharge(Qg)(Max)@Vgs Vgs(Max) InputCapacitance(Ciss)(Max)@Vds FETFeature PowerDissipation(Max) OperatingTemperature MountingType
ISP20EP10LMXTSA1

Таблицы данных

ISP20EP10LMXTSA1

ISP20EP10LMXTSA1

SMALL SIGNAL MOSFETS PG-SOT223-4

Infineon Technologies

2373 0.79
- +

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Расследования

Tape & Reel (TR),Cut Tape (CT),Digi-Reel® OptiMOS™ Active P-Channel MOSFET (Metal Oxide) 100 V 650mA (Ta), 990mA (Tc) 4.5V, 10V 2Ohm @ 600mA, 10V 2V @ 78µA 3.5 nC @ 10 V ±20V 170 pF @ 50 V - 1.8W (Ta), 4.2W (Tc) -55°C ~ 150°C (TJ) Surface Mount
RM18P100HDE RM18P100HDE

RM18P100HDE

MOSFET P-CH 100V 18A TO263-2

Rectron USA

2553 0.34
- +

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Расследования

Tape & Reel (TR) - Active P-Channel MOSFET (Metal Oxide) 100 V 18A (Tc) 10V 100mOhm @ 16A, 10V 3V @ 250µA - ±20V 1300 pF @ 25 V - 70W (Tc) -55°C ~ 150°C (TJ) Surface Mount
PJL9458AL_R2_00001 PJL9458AL_R2_00001

PJL9458AL_R2_00001

100V N-CHANNEL ENHANCEMENT MODE

Panjit International Inc.

3644 0.88
- +

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Расследования

Tape & Reel (TR),Cut Tape (CT),Digi-Reel® - Active N-Channel MOSFET (Metal Oxide) 100 V 7A (Ta) 4.5V, 10V 25mOhm @ 7A, 10V 2.5V @ 250µA 31 nC @ 10 V ±20V 1519 pF @ 30 V - 2.5W (Ta) -55°C ~ 150°C (TJ) Surface Mount
PJQ4442P-AU_R2_000A1 PJQ4442P-AU_R2_000A1

PJQ4442P-AU_R2_000A1

40V N-CHANNEL ENHANCEMENT MODE M

Panjit International Inc.

2564 0.95
- +

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Расследования

Tape & Reel (TR),Cut Tape (CT),Digi-Reel® - Active N-Channel MOSFET (Metal Oxide) 40 V 12.7A (Ta), 50A (Tc) 4.5V, 10V 7.5mOhm @ 20A, 10V 2.5V @ 250µA 17 nC @ 4.5 V ±20V 1759 pF @ 25 V - 2.4W (Ta), 53.6W (Tc) -55°C ~ 175°C (TJ) Surface Mount
SI3459BDV-T1-BE3

Таблицы данных

SI3459BDV-T1-BE3

SI3459BDV-T1-BE3

P-CHANNEL 60-V (D-S) MOSFET

Vishay Siliconix

3889 0.87
- +

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Расследования

Tape & Reel (TR),Cut Tape (CT),Digi-Reel® - Active P-Channel MOSFET (Metal Oxide) 60 V 2.2A (Ta), 2.9A (Tc) 4.5V, 10V 216mOhm @ 2.2A, 10V 3V @ 250µA 12 nC @ 10 V ±20V 350 pF @ 30 V - 2W (Ta), 3.3W (Tc) -55°C ~ 150°C (TJ) Surface Mount
SFP9Z24

Таблицы данных

SFP9Z24

SFP9Z24

MOSFET P-CH 60V 9.7A TO220-3

Fairchild Semiconductor

3750 0.00
- +

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Расследования

Tube - Obsolete P-Channel MOSFET (Metal Oxide) 60 V 9.7A (Tc) 10V 280mOhm @ 4.9A, 10V 4V @ 250µA 19 nC @ 10 V ±30V 600 pF @ 25 V - 49W (Tc) -55°C ~ 175°C (TJ) Through Hole
PJQ5445_R2_00001 PJQ5445_R2_00001

PJQ5445_R2_00001

40V P-CHANNEL ENHANCEMENT MODE M

Panjit International Inc.

3086 0.90
- +

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Расследования

Tape & Reel (TR),Cut Tape (CT),Digi-Reel® - Active P-Channel MOSFET (Metal Oxide) 40 V 8.5A (Ta), 45A (Tc) 4.5V, 10V 17mOhm @ 15A, 10V 2.5V @ 250µA 19 nC @ 4.5 V ±20V 2030 pF @ 25 V - 2W (Ta), 63W (Tc) -55°C ~ 150°C (TJ) Surface Mount
IRLS620A

Таблицы данных

IRLS620A

IRLS620A

N-CHANNEL POWER MOSFET

Fairchild Semiconductor

2179 0.00
- +

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Расследования

Bulk - Active N-Channel MOSFET (Metal Oxide) 200 V 4.1A (Tc) 5V 800mOhm @ 2.05A, 5V 2V @ 250µA 15 nC @ 5 V ±20V 430 pF @ 25 V - 26W (Tc) -55°C ~ 150°C (TJ) Through Hole
ISP98DP10LMXTSA1

Таблицы данных

ISP98DP10LMXTSA1

ISP98DP10LMXTSA1

SMALL SIGNAL MOSFETS PG-SOT223-4

Infineon Technologies

3639 0.82
- +

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Расследования

Tape & Reel (TR),Cut Tape (CT),Digi-Reel® OptiMOS™ Active P-Channel MOSFET (Metal Oxide) 100 V 930mA (Ta), 1.55A (Tc) 4.5V, 10V 980mOhm @ 900mA, 10V 2V @ 165µA 7.2 nC @ 10 V ±20V 350 pF @ 50 V - 1.8W (Ta), 5W (Tc) -55°C ~ 150°C (TJ) Surface Mount
RM100N60T2 RM100N60T2

RM100N60T2

MOSFET N-CH 60V 100A TO220-3

Rectron USA

3656 0.35
- +

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Расследования

Tape & Reel (TR) - Active N-Channel MOSFET (Metal Oxide) 60 V 100A (Tc) 10V 6.5mOhm @ 40A, 10V 4V @ 250µA - ±20V 4800 pF @ 30 V - 170W (Tc) -55°C ~ 175°C (TJ) Through Hole
RM4N700LD RM4N700LD

RM4N700LD

MOSFET N-CHANNEL 700V 4A TO252-2

Rectron USA

3363 0.35
- +

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Расследования

Tape & Reel (TR) - Active N-Channel MOSFET (Metal Oxide) 700 V 4A (Tc) 10V 1.4Ohm @ 2A, 10V 3.5V @ 250µA - ±30V 280 pF @ 50 V - 46W (Tc) -55°C ~ 150°C (TJ) Surface Mount
RM4N700IP RM4N700IP

RM4N700IP

MOSFET N-CHANNEL 700V 4A TO251

Rectron USA

3846 0.35
- +

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Расследования

Tube - Active N-Channel MOSFET (Metal Oxide) 700 V 4A (Tc) 10V 1.4Ohm @ 2A, 10V 3.5V @ 250µA - ±30V 280 pF @ 50 V - 46W (Tc) -55°C ~ 150°C (TJ) Through Hole
RM30N100LD RM30N100LD

RM30N100LD

MOSFET N-CH 100V 30A TO252-2

Rectron USA

3142 0.35
- +

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Расследования

Tape & Reel (TR) - Active N-Channel MOSFET (Metal Oxide) 100 V 30A (Tc) 10V 31mOhm @ 10A, 10V 2.5V @ 250µA - ±20V 2000 pF @ 25 V - 85W (Tc) -55°C ~ 175°C (TJ) Surface Mount
RM25P30S8 RM25P30S8

RM25P30S8

MOSFET P-CHANNEL 30V 25A 8SOP

Rectron USA

2172 0.35
- +

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Расследования

Tape & Reel (TR) - Active P-Channel MOSFET (Metal Oxide) 30 V 25A (Ta) 4.5V, 10V 9mOhm @ 15A, 10V 2.5V @ 250µA - ±20V 3960 pF @ 15 V - 3.5W (Ta) -55°C ~ 150°C (TJ) Surface Mount
PJQ5443-AU_R2_000A1 PJQ5443-AU_R2_000A1

PJQ5443-AU_R2_000A1

40V P-CHANNEL ENHANCEMENT MODE M

Panjit International Inc.

3000 0.91
- +

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Расследования

Tape & Reel (TR),Cut Tape (CT),Digi-Reel® - Active P-Channel MOSFET (Metal Oxide) 40 V 9A (Ta), 50A (Tc) 4.5V, 10V 12mOhm @ 10A, 10V 2.5V @ 250µA 23 nC @ 4.5 V ±20V 2767 pF @ 25 V - 2W (Ta), 63W (Tc) -55°C ~ 150°C (TJ) Surface Mount
ZXMN6A08E6TA

Таблицы данных

ZXMN6A08E6TA

ZXMN6A08E6TA

MOSFET N-CH 60V 2.8A SOT26

Diodes Incorporated

3435 0.91
- +

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Расследования

Tape & Reel (TR),Cut Tape (CT),Digi-Reel® - Active N-Channel MOSFET (Metal Oxide) 60 V 2.8A (Ta) 4.5V, 10V 80mOhm @ 4.8A, 10V 1V @ 250µA 5.8 nC @ 10 V ±20V 459 pF @ 40 V - 1.1W (Ta) -55°C ~ 150°C (TJ) Surface Mount
DMP2007UFG-13

Таблицы данных

DMP2007UFG-13

DMP2007UFG-13

MOSFET P-CH 20V 18A PWRDI3333

Diodes Incorporated

2660 0.91
- +

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Расследования

Tape & Reel (TR),Cut Tape (CT),Digi-Reel® - Active P-Channel MOSFET (Metal Oxide) 20 V 18A (Ta), 40A (Tc) 2.5V, 10V 5.5mOhm @ 15A, 10V 1.3V @ 250µA 85 nC @ 10 V ±12V 4621 pF @ 10 V - 2.3W (Ta) -55°C ~ 150°C (TJ) Surface Mount
PJQ5463A-AU_R2_000A1 PJQ5463A-AU_R2_000A1

PJQ5463A-AU_R2_000A1

60V P-CHANNEL ENHANCEMENT MODE M

Panjit International Inc.

2993 0.92
- +

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Расследования

Tape & Reel (TR),Cut Tape (CT),Digi-Reel® - Active P-Channel MOSFET (Metal Oxide) 60 V 4A (Ta), 15A (Tc) 4.5V, 10V 68mOhm @ 7.5A, 10V 2.5V @ 250µA 17 nC @ 10 V ±20V 879 pF @ 30 V - 2W (Ta), 25W (Tc) -55°C ~ 150°C (TJ) Surface Mount
FDMA6676PZ

Таблицы данных

FDMA6676PZ

FDMA6676PZ

MOSFET P-CH 30V 11A 6MICROFET

onsemi

2984 0.84
- +

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Расследования

Cut Tape (CT),Digi-Reel® PowerTrench® Obsolete P-Channel MOSFET (Metal Oxide) 30 V 11A (Ta) 4.5V, 10V 13.5mOhm @ 11A, 10V 2.6V @ 250µA 46 nC @ 10 V ±25V 2160 pF @ 15 V - 2.4W (Ta) -55°C ~ 150°C (TJ) Surface Mount
PJD4NA65_R2_00001 PJD4NA65_R2_00001

PJD4NA65_R2_00001

650V N-CHANNEL MOSFET

Panjit International Inc.

3944 0.92
- +

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Расследования

Tape & Reel (TR),Cut Tape (CT),Digi-Reel® - Active N-Channel MOSFET (Metal Oxide) 650 V 4A (Ta) 10V 2.7Ohm @ 2A, 10V 4V @ 250µA 11.4 nC @ 10 V ±30V 463 pF @ 25 V - - -55°C ~ 150°C (TJ) Surface Mount
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