Таблицы данных Фотографии Производитель. Часть # Акции Цены А Packaging Series ProductStatus FETType Technology DraintoSourceVoltage(Vdss) Current-ContinuousDrain(Id)@25°C DriveVoltage(MaxRdsOnMinRdsOn) RdsOn(Max)@IdVgs Vgs(th)(Max)@Id GateCharge(Qg)(Max)@Vgs Vgs(Max) InputCapacitance(Ciss)(Max)@Vds FETFeature PowerDissipation(Max) OperatingTemperature MountingType
IXTA62N15P

Таблицы данных

IXTA62N15P

IXTA62N15P

MOSFET N-CH 150V 62A TO263

IXYS

3408 5.03
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Tube Polar Active N-Channel MOSFET (Metal Oxide) 150 V 62A (Tc) 10V 40mOhm @ 31A, 10V 5.5V @ 250µA 70 nC @ 10 V ±20V 2250 pF @ 25 V - 350W (Tc) -55°C ~ 175°C (TJ) Surface Mount
IXTA36N30P

Таблицы данных

IXTA36N30P

IXTA36N30P

MOSFET N-CH 300V 36A TO263

IXYS

2205 5.03
- +

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Расследования

Tube PolarHT™ Active N-Channel MOSFET (Metal Oxide) 300 V 36A (Tc) 10V 110mOhm @ 18A, 10V 5.5V @ 250µA 70 nC @ 10 V ±30V 2250 pF @ 25 V - 300W (Tc) -55°C ~ 150°C (TJ) Surface Mount
IXTA75N10P

Таблицы данных

IXTA75N10P

IXTA75N10P

MOSFET N-CH 100V 75A TO263

IXYS

3184 5.03
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Tube Polar Active N-Channel MOSFET (Metal Oxide) 100 V 75A (Tc) 10V 25mOhm @ 500mA, 10V 5.5V @ 250µA 74 nC @ 10 V ±20V 2250 pF @ 25 V - 360W (Tc) -55°C ~ 175°C (TJ) Surface Mount
IXTP50N20P

Таблицы данных

IXTP50N20P

IXTP50N20P

MOSFET N-CH 200V 50A TO220AB

IXYS

300 5.07
- +

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Tube Polar Active N-Channel MOSFET (Metal Oxide) 200 V 50A (Tc) 10V 60mOhm @ 50A, 10V 5V @ 250µA 70 nC @ 10 V ±20V 2720 pF @ 25 V - 360W (Tc) -55°C ~ 175°C (TJ) Through Hole
IPW60R190C6FKSA1

Таблицы данных

IPW60R190C6FKSA1

IPW60R190C6FKSA1

MOSFET N-CH 600V 20.2A TO247-3

Infineon Technologies

3306 1.00
- +

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Bulk,Tube CoolMOS™ Not For New Designs N-Channel MOSFET (Metal Oxide) 600 V 20.2A (Tc) 10V 190mOhm @ 9.5A, 10V 3.5V @ 630µA 63 nC @ 10 V ±20V 1400 pF @ 100 V - 151W (Tc) -55°C ~ 150°C (TJ) Through Hole
IPA60R160C6XKSA1

Таблицы данных

IPA60R160C6XKSA1

IPA60R160C6XKSA1

MOSFET N-CH 600V 23.8A TO220-FP

Infineon Technologies

2975 1.00
- +

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Расследования

Bulk,Tube CoolMOS™ Not For New Designs N-Channel MOSFET (Metal Oxide) 600 V 23.8A (Tc) 10V 160mOhm @ 11.3A, 10V 3.5V @ 750µA 75 nC @ 10 V ±20V 1660 pF @ 100 V - 34W (Tc) -55°C ~ 150°C (TJ) Through Hole
IPP60R160C6XKSA1

Таблицы данных

IPP60R160C6XKSA1

IPP60R160C6XKSA1

MOSFET N-CH 600V 23.8A TO220-3

Infineon Technologies

2959 5.14
- +

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Расследования

Tube CoolMOS™ Not For New Designs N-Channel MOSFET (Metal Oxide) 600 V 23.8A (Tc) 10V 160mOhm @ 11.3A, 10V 3.5V @ 750µA 75 nC @ 10 V ±20V 1660 pF @ 100 V - 176W (Tc) -55°C ~ 150°C (TJ) Through Hole
STF9NK90Z

Таблицы данных

STF9NK90Z

STF9NK90Z

MOSFET N-CH 900V 8A TO220FP

STMicroelectronics

3869 5.15
- +

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Tube SuperMESH™ Active N-Channel MOSFET (Metal Oxide) 900 V 8A (Tc) 10V 1.3Ohm @ 3.6A, 10V 4.5V @ 100µA 72 nC @ 10 V ±30V 2115 pF @ 25 V - 40W (Tc) -55°C ~ 150°C (TJ) Through Hole
NTMTS0D6N04CLTXG

Таблицы данных

NTMTS0D6N04CLTXG

NTMTS0D6N04CLTXG

MOSFET N-CH 40V 554.5A

onsemi

2469 9.46
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Расследования

Tape & Reel (TR),Cut Tape (CT),Digi-Reel® - Active N-Channel MOSFET (Metal Oxide) 40 V 554.5A (Tc) 4.5V, 10V 0.42mOhm @ 50A, 10V 2V @ 250µA 126 nC @ 4.5 V ±20V 16013 pF @ 20 V - 5W -55°C ~ 175°C (TJ) Surface Mount
IXTA6N50D2-TRL IXTA6N50D2-TRL

IXTA6N50D2-TRL

MOSFET N-CH 500V 6A TO263

IXYS

2736 7.94
- +

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Расследования

Tape & Reel (TR),Cut Tape (CT),Digi-Reel® Depletion Active N-Channel MOSFET (Metal Oxide) 500 V 6A (Tj) 0V 500mOhm @ 3A, 0V 4.5V @ 250µA 96 nC @ 5 V ±20V 2800 pF @ 25 V - 300W (Tc) -55°C ~ 150°C (TJ) Surface Mount
SIHH070N60EF-T1GE3

Таблицы данных

SIHH070N60EF-T1GE3

SIHH070N60EF-T1GE3

MOSFET N-CH 600V 36A PPAK 8 X 8

Vishay Siliconix

2275 8.22
- +

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Расследования

Tape & Reel (TR),Cut Tape (CT),Digi-Reel® EF Active N-Channel MOSFET (Metal Oxide) 600 V 36A (Tc) 10V 71mOhm @ 15A, 10V 5V @ 250µA 75 nC @ 10 V ±30V 2647 pF @ 100 V - 202W (Tc) -55°C ~ 150°C (TJ) Surface Mount
IPB64N25S320ATMA1

Таблицы данных

IPB64N25S320ATMA1

IPB64N25S320ATMA1

MOSFET N-CH 250V 64A TO263-3

Infineon Technologies

3166 8.46
- +

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Расследования

Tape & Reel (TR),Cut Tape (CT),Digi-Reel® OptiMOS™ Active N-Channel MOSFET (Metal Oxide) 250 V 64A (Tc) 10V 20mOhm @ 64A, 10V 4V @ 270µA 89 nC @ 10 V ±20V 7000 pF @ 25 V - 300W (Tc) -55°C ~ 175°C (TJ) Surface Mount
NTMJS1D4N06CLTWG

Таблицы данных

NTMJS1D4N06CLTWG

NTMJS1D4N06CLTWG

MOSFET N-CH 60V 39A/262A 8LFPAK

onsemi

3006 9.50
- +

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Расследования

Tape & Reel (TR),Cut Tape (CT),Digi-Reel® - Active N-Channel MOSFET (Metal Oxide) 60 V 39A (Ta), 262A (Tc) 4.5V, 10V 1.3mOhm @ 50A, 10V 2V @ 280µA 103 nC @ 10 V ±20V 7430 pF @ 30 V - 4W (Ta), 180W (Tc) -55°C ~ 175°C (TJ) Surface Mount
FDI030N06

Таблицы данных

FDI030N06

FDI030N06

MOSFET N-CH 60V 120A I2PAK

onsemi

3533 5.20
- +

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Tube,Tube PowerTrench® Active N-Channel MOSFET (Metal Oxide) 60 V 120A (Tc) 10V 3.2mOhm @ 75A, 10V 4.5V @ 250µA 151 nC @ 10 V ±20V 9815 pF @ 25 V - 231W (Tc) -55°C ~ 175°C (TJ) Through Hole
STW75NF20

Таблицы данных

STW75NF20

STW75NF20

MOSFET N-CH 200V 75A TO247-3

STMicroelectronics

2646 5.21
- +

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Tube STripFET™ Active N-Channel MOSFET (Metal Oxide) 200 V 75A (Tc) 10V 34mOhm @ 37A, 10V 4V @ 250µA 84 nC @ 10 V ±20V 3260 pF @ 25 V - 190W (Tc) -50°C ~ 150°C (TJ) Through Hole
IPP020N06NAKSA1

Таблицы данных

IPP020N06NAKSA1

IPP020N06NAKSA1

MOSFET N-CH 60V 29A/120A TO220-3

Infineon Technologies

2629 5.23
- +

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Tube OptiMOS™ Active N-Channel MOSFET (Metal Oxide) 60 V 29A (Ta), 120A (Tc) 6V, 10V 2mOhm @ 100A, 10V 2.8V @ 143µA 106 nC @ 10 V ±20V 7800 pF @ 30 V - 3W (Ta), 214W (Tc) -55°C ~ 175°C (TJ) Through Hole
TK20N60W5,S1VF

Таблицы данных

TK20N60W5,S1VF

TK20N60W5,S1VF

MOSFET N-CH 600V 20A TO247

Toshiba Semiconductor and Storage

3209 3.74
- +

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Tube DTMOSIV Active N-Channel MOSFET (Metal Oxide) 600 V 20A (Ta) 10V 175mOhm @ 10A, 10V 4.5V @ 1mA 55 nC @ 10 V ±30V 1800 pF @ 300 V - 165W (Tc) 150°C (TJ) Through Hole
SUP40N25-60-E3

Таблицы данных

SUP40N25-60-E3

SUP40N25-60-E3

MOSFET N-CH 250V 40A TO220AB

Vishay Siliconix

2159 5.28
- +

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Tube TrenchFET® Active N-Channel MOSFET (Metal Oxide) 250 V 40A (Tc) 6V, 10V 60mOhm @ 20A, 10V 4V @ 250µA 140 nC @ 10 V ±30V 5000 pF @ 25 V - 3.75W (Ta), 300W (Tc) -55°C ~ 175°C (TJ) Through Hole
CSD18536KTTT

Таблицы данных

CSD18536KTTT

CSD18536KTTT

MOSFET N-CH 60V 200A/349A DDPAK

Texas Instruments

3168 6.26
- +

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Расследования

Tape & Reel (TR),Cut Tape (CT),Digi-Reel® NexFET™ Active N-Channel MOSFET (Metal Oxide) 60 V 200A (Ta), 349A (Tc) 4.5V, 10V 1.6mOhm @ 100A, 10V 2.2V @ 250µA 140 nC @ 10 V ±20V 11430 pF @ 30 V - 375W (Tc) -55°C ~ 175°C (TJ) Surface Mount
IPP023N08N5AKSA1

Таблицы данных

IPP023N08N5AKSA1

IPP023N08N5AKSA1

MOSFET N-CH 80V 120A TO220-3

Infineon Technologies

3501 5.35
- +

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Расследования

Tube OptiMOS™ Active N-Channel MOSFET (Metal Oxide) 80 V 120A (Tc) 6V, 10V 2.3mOhm @ 100A, 10V 3.8V @ 208µA 166 nC @ 10 V ±20V 12100 pF @ 40 V - 300W (Tc) -55°C ~ 175°C (TJ) Through Hole
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